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1. 发明专利

JP2017005040A 半導体装置审中-公开
标题翻译：半导体器件
公开(公告)号：JP2017005040A
公开(公告)日：2017-01-05
申请号：JP2015115485
申请日：2015-06-08
申请人：日本電信電話株式会社
发明人：知田健作 , 西口克彦 , 藤原聡
IPC分类号： H01L29/762 , H01L29/786 , H01L21/8234 , H01L27/088 , H01L27/08 , H01L21/339
摘要：【課題】熱エネルギーによって常にランダムに運動している半導体中の電荷を電流生成の資源として利用できるようにする。【解決手段】半導体からなる細線構造102と、細線構造102に設けられた電荷蓄積部103と、電荷蓄積部103を挾んで細線構造102に設けられたソース104およびドレイン105とを備える。また、ソース104と電荷蓄積部103との間に設けられた第1ゲート電極106と、電荷蓄積部103とドレイン105との間に設けられた第2ゲート電極107とを備える。また、電荷蓄積部103に蓄積されている電荷数を検出する電荷検出部120を備える。【選択図】図1A
摘要翻译：甲不断可用电荷在运动中的半导体随机由热能产生的电流的一个资源。包括A线结构102，其包括半导体，在导线结构102提供的电荷积累部103，以及源极104和跨越电荷存储部分103漏极105提供线结构102。此外，还包括源极104和电荷存储单元103，并且电荷存储单元103和漏极105之间的第二栅电极107之间设置的第一栅电极106。还包括用于检测存储在所述电荷存储单元103的电荷的数量的电荷检测器120。点域1A

2. 发明专利

JP5000997B2 Imaging device 有权
公开(公告)号：JP5000997B2
公开(公告)日：2012-08-15
申请号：JP2006334675
申请日：2006-12-12
申请人：パイオニア株式会社
发明人：義行奥田
IPC分类号： H01J31/28 , H01J29/04 , H01J29/96 , H01L21/339 , H01L29/762 , H04N5/335 , H04N5/359 , H04N5/369

3. 发明专利

JP2012054555A Complementary metal oxide semiconductor (cmos) structure 有权
标题翻译：补充金属氧化物半导体（CMOS）结构
公开(公告)号：JP2012054555A
公开(公告)日：2012-03-15
申请号：JP2011187435
申请日：2011-08-30
申请人： Internatl Business Mach Corp , インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation
发明人： RICKY S AMOS , BOYD DIANE C , CYRIL CABRAL JR , RICHARD D KAPLAN , JAKUB T KEDZIERSKI , VICTOR KU , LEE WOO-HYEONG , LI YING , MOCUTA ANDA C , NARAYANAN VIJAY , ANNE L ZEUGEN , SERENDRA MAHESWARAN
IPC分类号： H01L21/8238 , H01L21/28 , H01L21/336 , H01L21/339 , H01L21/60 , H01L27/092 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L21/76897 , H01L21/28052 , H01L21/28097 , H01L21/823835 , H01L29/66545 , H01L29/6656
摘要： PROBLEM TO BE SOLVED: To provide a complementary metal oxide semiconductor integration process that allows a plurality of silicide metal gates to be prepared on a gate dielectric.SOLUTION: There is provided a CMOS silicide metal gate integration method capable of eliminating a demerit of generation of variations in the height of poly Si gate stock which varies a silicide metal gate phase. The integration method minimizes the complexity of the process, thereby restraining the manufacturing cost of a CMOS transistor from increasing.
摘要翻译：要解决的问题：提供允许在栅极电介质上制备多个硅化物金属栅极的互补金属氧化物半导体集成工艺。解决方案：提供了一种CMOS硅化物金属栅极集成方法，其能够消除改变硅化物金属栅极相的多晶硅栅极原料的高度变化的缺点。该集成方法最小化了工艺的复杂性，从而抑制了CMOS晶体管的制造成本增加。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP4724151B2 有权
公开(公告)号：JP4724151B2
公开(公告)日：2011-07-13
申请号：JP2007131725
申请日：2007-05-17
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762

5. 发明专利

JP4715931B2 Charge detecting device and a charge detection method, as well as the solid-state imaging device and a method of driving the same, and imaging device 有权
公开(公告)号：JP4715931B2
公开(公告)日：2011-07-06
申请号：JP2009028892
申请日：2009-02-10
申请人：ソニー株式会社
发明人：俊輔亀田 , 信浩唐澤
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374
CPC分类号： H01L27/14806 , H01L27/14825 , H01L27/14843 , H01L27/14887 , H01L29/76816 , H01L29/76875
摘要： A charge detection device includes: a substrate having a first conductive type of predetermined region; a second conductive type of drain region disposed in the predetermined region of the substrate; a second conductive type of source region disposed in the predetermined region of the substrate; a second conductive type of channel region disposed between the drain region and the source region; a gate formed via an insulating film on the channel region; a second conductive type of charge accumulation region disposed in the predetermined region of the substrate and changing a threshold voltage of a transistor having the drain region, the source region, and the gate by accumulating signal charges as a target to be measured; a first conductive type of channel barrier region disposed between the channel region and the charge accumulation region; and a charge sweep region sweeping away the signal charges accumulated in the charge accumulation region.

6. 发明专利

JP4654866B2 Driving method for driving a device having a capacitive impedance and the driving device and imaging device 有权
公开(公告)号：JP4654866B2
公开(公告)日：2011-03-23
申请号：JP2005294398
申请日：2005-10-07
申请人：ソニー株式会社
发明人：功広田 , 雅博瀬上 , 幸久絹笠
IPC分类号： H04N5/372 , H01L21/339 , H01L27/148 , H01L29/762 , H04N5/335 , H04N5/376
CPC分类号： H04N5/3728 , G09G2330/021 , G09G2330/024 , H04N5/372 , H04N5/37206 , H04N5/376 , H04N5/3765

7. 发明专利

JP2011022267A Reticle pattern and method of manufacturing solid-state image sensor 有权
标题翻译：实例图案和制造固态图像传感器的方法
公开(公告)号：JP2011022267A
公开(公告)日：2011-02-03
申请号：JP2009165750
申请日：2009-07-14
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： MORIYA TARO
IPC分类号： G03F1/00 , G03F1/68 , G03F1/70 , H01L21/339 , H01L27/148 , H01L29/762
CPC分类号： G03F1/50
摘要： PROBLEM TO BE SOLVED: To provide a reticle for a solid-state image sensor, the reticle having improved accuracy of correcting misalignment. SOLUTION: The reticle includes a repetitive pattern 12 and a peripheral pattern 11, 13. In the repetitive pattern 12 and the peripheral pattern 11, 13, a pattern having a length of a side in a first direction, which is equal to or longer than that of the other, is defined as a first pattern having the first length of the side, and a pattern having a length of the side in the first direction, which is equal to or shorter than that of the other, is defined as a second pattern having the second length of the side. The first length is n times (n is an integer of 1 or greater) the second length. The first pattern has misalignment measurement patterns 60 provided at a position by a distance of a third length, which is shorter than the second length, from an upper end of the first pattern, and at a distance satisfying ((the third length)+(n-1)×(the second length)) from the upper end of the first pattern. The second pattern has a misalignment measurement pattern 60 provided at a position distant by the third length from an upper end of the second pattern. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供用于固态图像传感器的掩模版，所述掩模版具有提高校正未对准的精度。解决方案：掩模版包括重复图案12和外围图案11,13。在重复图案12和周边图案11,13中，具有第一方向的一侧的长度的图案等于被定义为具有侧面的第一长度的第一图案，并且限定与第一方向相同或更短的第一方向上的长度的图案作为具有侧面的第二长度的第二图案。第一长度是第二长度的n倍（n是1或更大的整数）。第一图案具有从第一图案的上端在距离第三长度短于第二长度的距离处的位置处设置的未对准测量图案60，并且以满足（（第三长度）+（ n-1）×（第二长度））。第二图案具有设置在距离第二图案的上端距离第三长度的位置处的未对准测量图案60。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP4592853B2 Imaging device 有权
公开(公告)号：JP4592853B2
公开(公告)日：2010-12-08
申请号：JP32721599
申请日：1999-11-17
申请人：オリンパス株式会社
发明人：英明吉田 , 圭一森
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/353 , H04N5/359 , H04N5/372 , H04N5/3728

9. 发明专利

JP2010263156A Solid-state imaging element and imaging device 有权
标题翻译：固态成像元件和成像装置
公开(公告)号：JP2010263156A
公开(公告)日：2010-11-18
申请号：JP2009114804
申请日：2009-05-11
申请人： Sony Corp , ソニー株式会社
发明人： SAIHO FUMINOBU
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762
CPC分类号： H01L27/14818
摘要： PROBLEM TO BE SOLVED: To provide a solid-state imaging element which reduces the size of a chip of a solid-state imaging element and perform the transfer of signal charges excellently. SOLUTION: There is constituted a solid-state imaging element comprising: a light receiving section in which photoelectric conversion is performed; a horizontal transfer resistor 4 formed in a semiconductor substrate 11; a horizontal transfer electrode 14 formed by a semiconductor layer; bus lines 16 and 17 which are electrically connected to a part on the horizontal transfer resistor 4 of the horizontal transfer electrode 14 and formed by a metal layer; and a barrier metal layer 21 which is formed in the vicinity of an interface between the horizontal transfer electrode 14 and the bus lines 16 and 17 at a contact part 15 which connects the horizontal transfer electrode 14 and the bus lines 16 and 17 and includes a work function between the work function of the semiconductor layer of the horizontal transfer electrode 14 and the work function of the metal layer of the bus lines 16 and 17. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种降低固态成像元件的芯片尺寸并执行信号电荷传输的固态成像元件。解决方案：构成了一种固态成像元件，包括：光接收部分，其中进行光电转换; 形成在半导体衬底11中的水平传输电阻器4; 由半导体层形成的水平转印电极14; 总线16和17，其电连接到水平传输电极14的水平传送电阻器4上并由金属层形成的部分; 以及在连接水平转印电极14和总线16和17的接触部分15处形成在水平转印电极14和总线16和17之间的界面附近的阻挡金属层21，并且包括水平转印电极14的半导体层的功函数与总线16和17的金属层的功函数之间的功函数。（C）2011，JPO＆INPIT

10. 发明专利

JP4536168B2 Image sensor having an improved method and an improved output area of the charge transport properties 失效
公开(公告)号：JP4536168B2
公开(公告)日：2010-09-01
申请号：JP34313595
申请日：1995-12-28
申请人：イーストマンコダックカンパニー
发明人：ゴードンスティーヴンズエリック , ピーラヴィンジェイムズ
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H04N5/378
CPC分类号： H01L29/76816 , H01L27/14831

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