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1. 发明专利

JPS60245166A SOLID STATE IMAGE PICK-UP DEVICE 失效
公开(公告)号：JPS60245166A
公开(公告)日：1985-12-04
申请号：JP10098384
申请日：1984-05-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHINO MASARU , NAKAYAMA MITSUO
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/369 , H04N5/372
摘要： PURPOSE:To form an optical black portion without using special process by forming the optical black portion on a photoreceptor of one row of photoreceptor having two-dimensional photoconductive film and photoelectric conversion cell of a material separate from aluminum wirings. CONSTITUTION:A solid state image sensor has a semiconductor substrate 1, a photoconductive film 2, a transparent electrode 3, an insulating film 4, an output producing aluminum wiring 5, photoelectric conversion cells 11-15, signal transfer units 21 25, signal reading and transfer control electrodes 41-45 and signal reading gate regions 31-35. To connect between the film 2 and the cells 13-15, part 60 of electrode materials 63, 64, 65 of Mo, Ti, W is used to form an optical black portion. Accordingly, the optical black portion 60 is formed without using special process.

2. 发明专利

JPS60140753A SOLID-STATE IMAGE PICKUP DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS60140753A
公开(公告)日：1985-07-25
申请号：JP25062683
申请日：1983-12-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YONEDA TADANAKA , ISHIKAWA OONORI , YOSHINO MASARU
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/359 , H04N5/365 , H04N5/369 , H04N5/372
摘要： PURPOSE:To obtain a device, in which a blooming and a smear are not generated, by depleting a region just under a photodiode region by applying bias voltage and flowing out only excess charges in photoelectric conversion signal charges in the region just under the photodiode region in the direction of a semiconductor substrate in a solid- state image pickup device having a second conduction type region as a charge tansfer region for a CCD and a first conduction type region as the photodiode region on the semiconductor substrate. CONSTITUTION:A P type layer 34 is formed on an N type semiconductor substrate 30, mutually isolated P type regions 35 are diffused and shaped to the layer 34, and an N type layer 36 is grown on the whole surface containing the regions 35 in an epitaxial manner. The layer 36 is formed to an insular shape by thick field oxide films 41 using P type channel stop regions 42 as underlays, an N type region 37 as a charge transfer region for a CCD and an N type region 44 as a photodiode region are shaped to the insular layer 36, and these regions 37 and 44 are connected by a lead region 38 for transferring sigal charges. The whole surface is coated with a gate oxide film 39 and an opening is bored, an Mo electrode 45 is formed in the region 44 while being surrounded by a PSG film 43, and a gate electrode 40 is applied on the region 37 through the film 39 and coated similarly with the film 43.

3. 发明专利

JPS5732183A Solid state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS5732183A
公开(公告)日：1982-02-20
申请号：JP10746580
申请日：1980-08-04
申请人： Matsushita Electric Ind Co Ltd
发明人： YOSHINO MASARU
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/361 , H04N5/369 , H04N5/3728
CPC分类号： H01L27/14665
摘要： PURPOSE:To prevent deterioration of dark-current characteristic of a photoconductor film by bringing the 1st conductive electrode into ohmic contact with the reverse side of the photoconductor film, and by further bringing the 2nd conductive electrode into ohmic contact with the 1st conductive electrode and a photoelectric converting cell. CONSTITUTION:Here, a photoelectric converting cell 2 and a photoconductor film 10 are not coupled together electrically and directly by a conductive electrode 9'. Namely, after a contact hole C2' is made over the photoelectric converting cell 2, a conductive electrode 12 is formed and after a contact hole C2' is made, a conductive electrode 9' is formed across a melt-flow layer 8 of low-fusion-point glass. Then, a conductive electrode 12 for electric coupling between the conductive electrode 9' and photoelectric converting cell 2 is formed while just filling a surface step part formed between gate electrodes 5 and 5' for the application of a driving clock.
摘要翻译：目的：通过使第一导电电极与光电导体膜的反面欧姆接触，并且进一步使第二导电电极与第一导电电极欧姆接触，防止光电导体膜的暗电流特性的劣化，以及光电转换电池构成：这里，光电转换单元2和感光体膜10不通过导电电极9'电连接并直接耦合在一起。也就是说，在光电转换单元2上形成接触孔C2'之后，形成导电电极12，并且在形成接触孔C2'之后，在低通滤波器2的熔体流动层8上形成导电电极9' 熔点玻璃。然后，形成用于导电电极9'和光电转换单元2之间的电耦合的导电电极12，同时仅填充形成在栅电极5和5'之间的表面台阶部分，以用于驱动时钟。

4. 发明专利

JPS5577139A FINE WORKING METHOD 失效
公开(公告)号：JPS5577139A
公开(公告)日：1980-06-10
申请号：JP15151378
申请日：1978-12-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHINO MASARU , YONEDA TADANAKA
IPC分类号： H01L21/66 , H01L21/306
摘要： PURPOSE:To imorove the yield of the semiconductor device by mending pattern deficiency before etching obtaining proper information thereon when the film provided on a semiconductor substrate is etched to yield a fine pattern. CONSTITUTION:A Si3N4 film 2 applied on a Si substrate 1 is etched to yield a fine pattern. A conductive material 3 such as Al is provided entirely thereon and a resist film 4 having a given pattern is formed thereon as mask. Then, under the mask, the Al material 3 undergoes an etching by a mixing liquid of phosphric acid, nitric acid and acetic acid at 60 deg.C and the film 4 is removed. Thereafter, a common electorde 6 and a separate needle-shaped electrode 7 are brought into contact with the material split and the electric resistance is measured with an oscilloscope on the film 2 positioned between the materials. In this process, when an abnormal resistance value is indicated due to the shortcircuiting of the material, a mask of the resist film 4 is arranged again and the shortcircuited part is removed by an etching. In this manner, the etching of the film 2 is performed after the split material is restored to the normal shape.

5. 发明专利

JPS5392621A COLOR SOLID IMAGE PICKUP UNIT 失效
公开(公告)号：JPS5392621A
公开(公告)日：1978-08-14
申请号：JP708277
申请日：1977-01-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： WADA TAKAMICHI , TERUI YASUAKI , YOSHINO MASARU
IPC分类号： H04N9/07 , H01L31/00 , H01L31/0232 , H04N5/30 , H04N9/04
摘要： PURPOSE:To simplify the alignment of a photo detecting part and a color filter and the fixing of the color filter and prevent light interference and scattering by providing a fixed fiber plate on one main face of a light transmission body through the color filter.

6. 发明专利

JPS5378115A COLOR PHOTO ELECTRIC CONVERTER 失效
公开(公告)号：JPS5378115A
公开(公告)日：1978-07-11
申请号：JP15462876
申请日：1976-12-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TERUI YASUAKI , WADA TAKAMICHI , YOSHINO MASARU , OOTA YOSHIO
IPC分类号： H04N9/07 , H04N5/30 , H04N9/04
摘要： PURPOSE:To develop the color video signal with high quality, by obtaining 3m - 2 sets of brightness signal from 3m sets of photo electric converting elements.

7. 发明专利

JPS5376614A SCANNING CIRCUIT OF SOLID PICKUP EQUIPMENT 失效
公开(公告)号：JPS5376614A
公开(公告)日：1978-07-07
申请号：JP15252176
申请日：1976-12-17
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： WADA TAKAMICHI , TERUI YASUAKI , YOSHINO MASARU , OOTA YOSHIO
IPC分类号： H04N3/14 , H04N5/30
摘要： PURPOSE:To pick up the scan output of a solid pickup element in the non-returnto-zero waveform by scanning and outputting the logical sum of two adjacent outputs of the charge transfer element composed of a plural number of unit circuits.

8. 发明专利

JPS5374317A SOLID STATE PICK UP UNIT 失效
公开(公告)号：JPS5374317A
公开(公告)日：1978-07-01
申请号：JP15112276
申请日：1976-12-15
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHINO MASARU , TERUI YASUAKI , OOTA YOSHIO , WADA TAKAMICHI
IPC分类号： H01L27/148 , H01L31/00 , H04N5/30 , H04N5/335 , H04N5/341 , H04N5/372 , H04N5/374
摘要： PURPOSE:To realize the solid state pick up unit simple in constitution and driving method, by reading out the photo electric conversion signal sensed with the one photo electric conversion cell to the two electric charge transfer element trains placed at the both sides of the photo electric conversion signal sensed.

9. 发明专利

JPS5312261A OUTPUT CIRCUIT OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5312261A
公开(公告)日：1978-02-03
申请号：JP8673576
申请日：1976-07-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHINO MASARU , WADA KOUDOU
IPC分类号： H03M7/00 , G11C19/00 , H03K17/62 , H03M9/00 , H04L13/00 , H04L13/10 , H04N3/14 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/374 , H04N5/378
摘要： PURPOSE:To prevent the production of the periodical noise, by improving the parallel signal output circuit.

10. 发明专利

JPS5312223A SOLID PICKUP DEVICE 失效
公开(公告)号：JPS5312223A
公开(公告)日：1978-02-03
申请号：JP8673476
申请日：1976-07-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHINO MASARU
IPC分类号： H04N5/30 , H04N5/335 , H04N5/341 , H04N5/372
摘要： PURPOSE:To ensure a high-density transfer for a photo information through an electric charge storage by setting the diffusion region for electric storage to a fixed electric potential through a series of action to make the application voltage zero after an application of a voltage of inverse polarity.

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