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1. 发明专利

JPH01239951A SUPPORT MECHANISM OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH01239951A
公开(公告)日：1989-09-25
申请号：JP6880988
申请日：1988-03-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： OOGA HIROASA , YAKUSHIJI HISAO
IPC分类号： H01L21/677 , H01L21/68
摘要： PURPOSE:To reduce a foreign body to be adhered to the surface of a wafer and to handle the wafer always stably by a method wherein the wafer comes into contact with only a point at a contact part of a wafer support mechanism used to take in and out the wafer from a cassette and to transfer it to a place where it is processed. CONSTITUTION:A wafer 2 is handled by using a semiconductor wafer support mechanism 1; it is transferred in X and Y directions; it is taken in and out a cassette or transferred to a place where it is processed. It is set that the wafer 2 comes into contact with the support mechanism 1 at three contact parts 5 (when it comes into contact with three or more points, it can be handled always stably); the wafer 2 can be handled surely. When the wafer 2 is handled by slight contact, a foreign body to be adhered to the rear of the wafer 2 can be reduced and the wafer can be handled always stably.

2. 发明专利

JPH01172120A WAFER CARRIER 失效
公开(公告)号：JPH01172120A
公开(公告)日：1989-07-07
申请号：JP33267087
申请日：1987-12-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： OOGA HIROTOMO , YAKUSHIJI HISAO , NAKAMURA HIROSHI
IPC分类号： B23Q7/03 , B65G45/00 , B65G45/10 , B65G45/12 , B65G45/22 , B65G45/24
摘要： PURPOSE:To prevent foreign objects from adhering by providing a cleaning means on the way of the circulating path of a belt in a wafer carrier equipped with a circulating belt. CONSTITUTION:A sucking means 30 and a wiper 3 are provided for the circulating path of a carrying belt 1 so that foreign objects adhering to the belt 1 are sucked out and wiped off for removal. Namely, the belt 1 which goes around the return side after it has carried wafers, is subjected to sucking action by both a sucking machine 11 and a sucker 6 so that the foreign objects adhering to the belt 1 is sucked out for removal. Then, the belt is wiped off and cleaned by the wiper 3 impregnated with solvent. Owing to this constitution, the belt is cleaned at all time while preventing the adhesion of the foreign objects onto the wafers.

3. 发明专利

JPS63273331A APPARATUS FOR TRANSFERRING AND PROCESSING OF WAFER 失效
公开(公告)号：JPS63273331A
公开(公告)日：1988-11-10
申请号：JP10930787
申请日：1987-04-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAMURA HIROSHI , YAKUSHIJI HISAO , OOGA HIROTOMO
IPC分类号： B65G1/04 , B65G1/00 , B65G1/07 , H01L21/677 , H01L21/68
摘要： PURPOSE:To prevent the contamination of wafers or the wafer cassette due to the adhesion of dusts by stably providing the wafer cassette outside the apparatus main body cover, and disposing the driver section of the wafer transportation system within the main body. CONSTITUTION:A driver section 13 is upwardly and downwardly moved via a transfer system shaft 14 by a stepping motor or the like in the main body, and a wafer sucking section 7 is moved by a supporting rod 10 to the height of a wafer 4 to be treated of a wafer cassette 3 stably provided on a stage 2 of a main body cover 1. Then, an arm 8 connected to the rod 10 expands and contracts, a desired wafer 4 is sucked in the sucking section 7, the arm 8 is swung by a rotating shaft 9 after the restoration of the arm 8, the height of the arm 8 is adjusted similarly, and the wafer 4 is conveyed to the treatment place. The storage of the wafer 4 into the cassette 3 is also performed in the like manner, thereby preventing the contamination of the wafers and the wafer cassette due to the adhesion of dusts by the stepping motor or the like within the main body.

4. 发明专利

JPS5976445A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS5976445A
公开(公告)日：1984-05-01
申请号：JP18954182
申请日：1982-10-26
申请人： Mitsubishi Electric Corp
发明人： HARADA HIROJI , YAKUSHIJI HISAO , KOTANI HIDEO , TSUKAMOTO KATSUHIRO , SAKURAI HIROMI
IPC分类号： H01L21/76 , H01L21/316 , H01L21/762
CPC分类号： H01L21/76216
摘要： PURPOSE:To realize micro-miniature element and high integration density by replacing the mask used for forming element isolation oxide film with a conventional high temperature CVD nitride film and by reducing bird beak through the use of plasma CVD nitride film. CONSTITUTION:A thick plasma CVD nitride film 8 is formed directly on the p type Si substrate 1. A resist mask 4 is provided and etching is carried out. The film 8a is left and the p channel cut 5 is formed by implanting the B ion. Different from conventional thin nitride film obtained by the high temperature CVD method, the film 8 is thick and does not allow passing through of the B ion. The mask 4 is removed and a high temperature processing is carried out. Thereby, an element isolating oxide film 6 is formed and the film 8a is removed. In such a structure, there exists no oxide film under the plasma CVD nitride film 8a and therefore O2 is not supplied to the lower part of periphery of film 8a and the produced bird beak is very small. Accordingly, elements can be micro-miniaturized and high integration density can be realized.
摘要翻译：目的：通过用传统的高温CVD氮化物膜代替用于形成元件隔离氧化膜的掩模，并通过使用等离子体CVD氮化物膜来减少鸟嘴，来实现微型元件和高集成度。构成：在p型Si衬底1上直接形成厚等离子体CVD氮化物膜8.设置抗蚀剂掩模4并进行蚀刻。留下膜8a，通过注入B离子形成p +通道切口5。与通过高温CVD法获得的常规薄氮化膜不同，膜8厚，不允许B离子通过。除去掩模4，进行高温处理。由此，形成元件隔离氧化膜6，除去膜8a。在这种结构中，在等离子体CVD氮化膜8a下方不存在氧化膜，因此不向膜8a的周边的下部供给O 2，所生成的鸟喙很小。因此，元件可以微型化，并且可以实现高集成度。

5. 发明专利

JPS5893354A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5893354A
公开(公告)日：1983-06-03
申请号：JP19470381
申请日：1981-11-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO , KOTANI HIDEO , YAKUSHIJI HISAO , HARADA HIROJI , HIRATA KATSUHIRO
IPC分类号： H01L21/3213 , H01L21/3205 , H01L21/88
摘要： PURPOSE:To improve the coverage of step of multipolar wiring structure largely by sputtering and etching a layer insulating film formed through a CVD method by inert gas ions. CONSTITUTION:When Ar gas is RF-sputtered onto the insulating film 4 shaped onto the first layer electrode wiring 31 in AlSi through the CVD method, Ar ions are projected to a semiconductor substrate 1 approximately vertically. A sputtering phenomenon by Ar ions, etc. largely depends upon an incident angle, and the etching rate is increased in an approximately quintuple extent when the ions are projected at approximately 45 deg. as compared to when they are projected vertically. Accordingly, the etching of a stepped section advances abnormally rapidly as compared to flat sections in the sputtering and etching of the insulating film 4, and the excellent sectional form of the coverage of step is obtained in shape after etching.

6. 发明专利

JPS5712519A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5712519A
公开(公告)日：1982-01-22
申请号：JP8815480
申请日：1980-06-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMA HIDEAKI , YAKUSHIJI HISAO
IPC分类号： H01L21/22 , H01L21/223
摘要： PURPOSE:To form an impurity difusion layer which has prescribed difusion depth and impurity concentration distribution, by employing low-temperature oxidizing process at the time of execution of thermal oxidization of a semiconductor substrate containing an impurity difusion layer. CONSTITUTION:A resist 3 is selectively formed on an oxidized film 2 formed on a semiconductor substrate 1. And then, with the resist 3 as a mask, the oxide coating 2 is selectively etched to open a hole, impurity is difused into the semiconductor substrate with the oxide coating as a mask, and a impurity difusion layer 4 is thus formed. When this substrate 1 is oxidized at a low temperature and high pressure, that is, 750 deg.C and 6atm, etc., an oxide coating 5 is formed and the difusion layer 4 is shallowly and widely difused. And then, when the layer 5 is eliminated, the difusion layer 4 becomes formed with a prescribed difusion depth of d3.

7. 发明专利

JPS56158459A PACKAGE FOR SEMICONDUCTOR 失效
公开(公告)号：JPS56158459A
公开(公告)日：1981-12-07
申请号：JP6430680
申请日：1980-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： DENDA MASAHIKO , KOTANI HIDEO , SATOU SHINICHI , YAKUSHIJI HISAO , UOTANI SHIGEO
IPC分类号： H01L23/02 , H01L23/556
摘要： PURPOSE:To prevent adhesion of solder and to prevent the generation of a software error of the semiconductor by a method wherein the part of a cover for airtight sealing facing with the semiconductor chip is covered with an oxide film. CONSTITUTION:When the oxide film 5 is adhered to the part of the cover 3 for sealing facing with the semiconductor chip 2, because the solder 4 is not adhered on the film 5 and the area of the solder 4 is reduced, the irradiating quantity of alpha rays generating from the solder is also reduced, the angle to look at the solder 4 from the chip 2 is also reduced. Therefore probability of striking by alpha rays is reduced, and moreover the transferring distance through the protective film over the chip is stretched to stop the alpha rays. Accordingly the generation of a software error is prevented.

8. 发明专利

JPS5637650A MANUFACTURING OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5637650A
公开(公告)日：1981-04-11
申请号：JP11365579
申请日：1979-09-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYOSHI HIROKAZU , YAKUSHIJI HISAO , MIYAKE KUNIAKI , HIRATA KATSUHIRO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205
摘要： PURPOSE:To obtain the improved coating at the stepped protion of a portective film or an interlayer insulative film and increase the reliability by making the etched side of Mo or a Mo alloy to be inclined moderately. CONSTITUTION:A Mo or Mo alloy film 3 and an Si3N4 film 4 are coated on an SiO2 laid upon an Si substrate 1 and a mask 5 is applied thereon. Through the etching by plasma of CF4 gas, the Si4N4 film 4 is removed at its sides and the Mo film 3 is etched into the tapered form. The speed of etching the Si3N4 by plasma can be varied by changing a mixture ratio of SiH4 and N2, so that the tapered angle of the Mo film 3 is freely controlled through the selection of the mixture ratio.

9. 发明专利

JPS5610932A PLASMA TREATING APPARATUS 失效
公开(公告)号：JPS5610932A
公开(公告)日：1981-02-03
申请号：JP8762079
申请日：1979-07-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIRATA KATSUHIRO , MIYAKE KUNIAKI , YAKUSHIJI HISAO
IPC分类号： B01J19/08 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To equalize a gas flow in a plasma treating apparatus by extending the end edge of one electrode to the periphery of the other electrode to produce a barrier of predetermined gap when inserting a substance to be treated between upper and lower electrodes and treating it with plasma while flowing reaction gas thereto. CONSTITUTION:An airtight chamber 5 is placed on a substrate 1 having an exhaust gas hole 6 at the center, and a lower electrode 2 is disposed in the chamber 5 while supporting it by a support 3. An upper electrode 4 having a number of gas injection holes 9 for injecting gas toward a lower surface is provided at predetermined gap oppositely to the electrode 2. Gas is supplied from a reaction gas supply hole 7 penetrated through the substrate 1 between the electrodes 2 and 4 to treat a number of semiconductor wafer 8 with plasma between the electrodes. In this configuration a barrier 10 having a conductor 10a at the root and an insulator 10b at the end is mounted at the peripheral edge of the lower electrode 2, and is erected at a gap on the peripheral edge of the upper electrode 2. In this manner the gas flow between the electrodes becomes uniform to enable uniform treatment of the wafers 8 on the periphery.

10. 发明专利

JPS5446367A METHOD OF MAKING MULTILAYER METAL WIRING 失效
公开(公告)号：JPS5446367A
公开(公告)日：1979-04-12
申请号：JP11383977
申请日：1977-09-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAKUSHIJI HISAO , SATOU SHINICHI , ISHIKURA HIDENOBU , HARADA HIROTSUGU
IPC分类号： H05K3/46 , H01L21/3213 , H05K3/00

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