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1. 发明专利

JP2001244315A APPARATUS FOR MANUFACTURING SEMICONDUCTOR AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001244315A
公开(公告)日：2001-09-07
申请号：JP2000056894
申请日：2000-03-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUNIIE MICHIO , OTA HIROKI , MIYAKE KUNIAKI , MUKOGAWA YASUKAZU
IPC分类号： H01L21/677 , H01L21/205 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing semiconductor which prevents a semiconductor device from contaminating with organic matters and foreign matters. SOLUTION: An apparatus comprises respectively independent exhaust systems 11 which exhaust air supplied through a filter 6 for eliminating foreign matters and a filter 7 for eliminating organic matters at a ceiling part, on a wafer load/unload part 2, a transportation part 3, and a wafer treating part 4. Exhaust controllers 12 are installed in each exhaust system 11.

2. 发明专利

JPS62271455A LOCALIZED OXIDATION METHOD FOR SEMICONDUCTOR 失效
公开(公告)号：JPS62271455A
公开(公告)日：1987-11-25
申请号：JP6624187
申请日：1987-03-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUBOUCHI NATSUO , ENOMOTO TATSUYA , MIYAKE KUNIAKI , MIYOSHI HIROKAZU
IPC分类号： H01L21/316 , H01L21/76
摘要： PURPOSE:To prevent the generation of cracks generated at the corners of the pattern of an silicon nitride film by bringing the internal angles of the corners of the pattern of the silicon nitride film to angles to 180 deg. from 135 deg. and forming a localized oxide film. CONSTITUTION:When the internal angles theta of the corners of the pattern of an silicon nitride film exceed 135 deg., cracks are hardly generated. That is, cracks are hardly generated because the pattern of the silicon nitride film is lifted upward by orientation progressing in the transverse direction of an silicon oxide film under the pattern of the silicon nitride film. Consequently, when a rectangular silicon nitride-film pattern 1 is shaped, two or a plurality of the patterns, internal angles of which extend over values not small than 135 deg. but smaller than 180 deg., are formed, thus almost completely preventing the generation of cracks. Accordingly, a localized oxide film with a good fidelity with respect to the pattern of the silicon nitride film can be formed.

3. 发明专利

JPS6037751A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6037751A
公开(公告)日：1985-02-27
申请号：JP14752683
申请日：1983-08-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： SAKAEMORI TAKAHISA , ITAKURA HIDEAKI , YONEDA MASAHIRO , MIYAKE KUNIAKI , NAKAJIMA MASAYUKI , SATOU SHINICHI
IPC分类号： H01L23/522 , H01L21/31 , H01L21/314 , H01L21/768
摘要： PURPOSE:To prevent disconnections and short-circuits by realization of the flattening of the surface of an interlayer insulation film by a method wherein the insulation film is put in a multilayer structure by the bias sputtering technique. CONSTITUTION:An oxide film 3a doped with phosphorus and having a sufficiently low viscosity is grown in chemical vapor phase, and next an oxide film 3b is deposited in superposition by the bias sputtering method. Since bias sputtering etches an oxide film being deposited while the film is deposited, selection of a condition of reverse bias enables to deposit substances while the surface is flattened. Otherwise, it is also available that an oxide film 3c of a sufficiently low viscosity is deposited in the atmosphere of phosphorus by sputtering, and that a non-doped oxide film 3d is successively deposited by the sputtering method wherein a reverse bias is applied. This construction enables to obtain the interlayer insulation film whose surface is flattened, causing no disconnections and short-circuits in the wiring formed in the upper layer thereof.

4. 发明专利

JPS6037734A PATTERN FORMATION 失效
公开(公告)号：JPS6037734A
公开(公告)日：1985-02-27
申请号：JP14752783
申请日：1983-08-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI , YONEDA MASAHIRO , MIYAKE KUNIAKI , NAKAJIMA MASAYUKI , SATOU SHINICHI , SAKAEMORI TAKAHISA
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To form a flat film having least stepped portions by giving a larger light transparent coefficient of mask pattern provided on the mask plate to the peripheral part than to the center thereof and by generating inclination to the aperture generated on a resin film, therefore to the aperture of the layer to be processed under such risin film on the occasion of irradiating the photo sensitive resin film covering over the layer to be processed on the substrate with the light through the mask plate. CONSTITUTION:The layer 2 to be processed is deposited on a semiconductor substrate 1, it is then covered with a photo sensitive resin film 3 and a mask plate 24 having a mask pattern 25 formed by Cr is deposited thereon. In this case, amount of transparent light at the peripheral part is larger than that at the center and thereby amount of light entering the film 3 is controlled and gradient is generated at the periphery of remaining film 3. The layer 2 to be processed is etched with the film 3 used as the mask and the corresponding gradient is also generated herein. The thickness of the upper layer film 27 provided on the layer 2 is made equal any where so that thickness at the gradient area 28 is not reduced.

5. 发明专利

JPS6037727A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6037727A
公开(公告)日：1985-02-27
申请号：JP14752583
申请日：1983-08-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： YONEDA MASAHIRO , MIYAKE KUNIAKI , NAKAJIMA MASAYUKI , SATOU SHINICHI , SAKAEMORI TAKAHISA , ITAKURA HIDEAKI
IPC分类号： H01L21/768 , H01L21/28 , H01L21/31
摘要： PURPOSE:To obtain a minute hole by utilizing increase of speed in oxidization if impurity such as phosphorus is implanted in an Si3N4 film, coating the Si3N4 film on a semiconductor substrate, covering only on a diffusion region where forming of a contact hole is intended with photo resist, implanting the phosphorus ion in the Si3N4 film, later oxidizing it and romoving the Si3N4 film located under the photo resist. CONSTITUTION:On the circumference of an Si substrate 11, a thick field oxidized film 12 is formed and on the surface of the substrate 11 which is surrounded by the film 12, a thin gate oxidized film is coated. By ion injection through the gate oxidized film, a source and drain region 14 is formed. Then, a specified shape wiring and an electrode 13 are installed on the film 12 and the gate oxidized film and all the surfaces are coated with an Si3N4 film 18. Later, on the region 14 where a hole is formed, a resist film 19 is installed and P ion is impanted on all the surface whereby only under the film 19 is made a region 18b where no P ion is implanted. Then, the implanted film 18a is oxidized to an oxidized film 20 and the region 18b is removed with the film 18a which is above the region 18b and a required hole 17 is accomplished.

6. 发明专利

JPS59194427A Optical cvd device 失效
标题翻译：光学CVD装置
公开(公告)号：JPS59194427A
公开(公告)日：1984-11-05
申请号：JP6855583
申请日：1983-04-18
申请人： Mitsubishi Electric Corp
发明人： SATOU SHINICHI , TAKAYAMA KENJI , FUJIWARA KEIJI , ITAKURA HIDEAKI , HATANAKA MASAHIRO , MIYAKE KUNIAKI
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： PURPOSE:To prevent a reaction product from adhering to an incident window by blowing inert gas to the window at the time of growing a film. CONSTITUTION:In an optical CVD device having a low pressure mercury lamp 1 and a reaction chamber 3 in which a light from the lamp 1 is emitted through an incident window 4, a holder 15 having a piping nozzle 6 for flowing SiH4 as reaction gas and a piping nozzle 11 for blowing argon gas as inert gas on the surface of the window 4 is arranged in the chamber 3. Then, the light is emitted from the lamp 1, the argon gas is blown from the nozzle 11 to cover the surface of the window 4 in the step of growing an amorphous silicon on a substrate 10 disposed in the chamber 3. Accordingly, the reaction product is not adhered to the window 4, and the growing speed of the film can be maintained constant.
摘要翻译：目的：通过在生长薄膜时向窗户吹入惰性气体，防止反应产物附着到入口窗口。构成：在具有低压汞灯1和反应室3的光CVD装置中，其中来自灯1的光通过入射窗4发射，具有用于使SiH 4作为反应气体流动的管道喷嘴6的保持器15和在室3内设置有用于在窗口4的表面上吹氩气作为惰性气体的管道喷嘴11.然后，从灯1发射光，从喷嘴11吹出氩气，以覆盖表面在设置在室3中的基板10上生长非晶硅的步骤中的窗口4。因此，反应产物不粘附到窗口4，并且膜的生长速度可以保持恒定。

7. 发明专利

JPS59194425A Photochemical vapor phase film forming apparatus 失效
标题翻译：化学蒸气相膜成型装置
公开(公告)号：JPS59194425A
公开(公告)日：1984-11-05
申请号：JP6855283
申请日：1983-04-18
申请人： Mitsubishi Electric Corp
发明人： MIYAKE KUNIAKI , ITOU HIROMI , HATANAKA MASAHIRO , ITAKURA HIDEAKI , TAKAYAMA KENJI , FUJIWARA KEIJI
IPC分类号： H01L21/205
CPC分类号： C23C16/483
摘要： PURPOSE:To increase the number of substrates which can be processed by arranging the substrates horizontally in parallel to the direction of a light beam radiation. CONSTITUTION:A laser beam 12 from a laser source 11 is expanded to the prescribed diameter by a beam expander 13 composed of a concave lens 13-1 and a convex lens 13-2 to enter a semi-cylindrical convex lens 16. The light beam converged by the convex lens 16 passes through a rod-shape concave lens 17 to be formed into a laminar light beam 18 and radiated into a reaction chamber as an exciting light. A supporting table 23 is placed in parallel to the beam and a plurality of substrates 30 are arranged on the table 23. The reactive gas is subjected to photochemical decomposition by the light beam 18 and films are deposited on the substrates 30. By arranging the substrate in parallel to the direction of the light beam radiation, the number of the substrates which can be processed is increased.
摘要翻译：目的：通过平行于光束辐射的方向水平放置基板来增加可处理的基板的数量。构成：通过由凹透镜13-1和凸透镜13-2构成的光束扩展器13将来自激光源11的激光束12扩展到规定直径，以进入半圆柱形凸透镜16。由凸透镜16会聚的通过杆状凹透镜17形成为层状光束18，作为激发光照射到反应室内。支撑台23与光束平行放置，并且多个基板30布置在工作台23上。反应气体由光束18进行光化学分解，膜沉积在基板30上。通过布置基板平行于光束辐射的方向，可以处理的基板的数量增加。

8. 发明专利

JPS59155934A Forming method of minute pattern 失效
标题翻译：分形式的形成方法
公开(公告)号：JPS59155934A
公开(公告)日：1984-09-05
申请号：JP3121883
申请日：1983-02-25
申请人： Mitsubishi Electric Corp
发明人： OOGA HIROTOMO , NISHIOKA KIYUUSAKU , ITAKURA HIDEAKI , HATANAKA MASAHIRO , WAKAMIYA WATARU , MIYAKE KUNIAKI
IPC分类号： H01L21/027 , G03F7/09 , G03F7/20 , G03F7/26 , G03F7/38 , H01L21/302 , H01L21/3065
CPC分类号： G03F7/094
摘要： PURPOSE:To obtain a minute pattern with high accuracy while unnecessitating treatment at a high temperature by applying a thick resist sufficiently covering a stepped difference section onto a semiconductor substrate with the stepped difference, forming a thin resist, into which a substrance of comparatively large mass is mixed, on the resist and etching the thick resist while using the accumulation of the substance as a mask. CONSTITUTION:A sufficiently thick resist 12 is applied onto a semiconductor substrate 11 with a stepped difference while burying the stepped difference and the whole surface is exposed, and a thin mask 13 for etching, into which a substance 14, such as Pt, No, Au, etc. of comparatively large mass is mixed, is formed on the resist. Minute patterns are transferred and developed to the mask 13 through contraction, projection and exposure and the like, and the resist 12 is etched while using a layer composed of the exposed substance 14 as a mask. A layer consisting of the substance 14 is removed, and the substrate 11 is etched similarly while employing the residual resist 12 as a mask, thus obtaining the desired minute patterns.
摘要翻译：目的：为了获得高精度的微小图案，通过将具有阶梯差的足够覆盖台阶差的厚的抗蚀剂施加到半导体衬底上，形成薄的抗蚀剂，在高温下不需要处理，其中质量较大的在抗蚀剂上混合，并且在使用物质的积聚作为掩模的同时蚀刻厚的抗蚀剂。构成：将具有阶梯差的厚度较薄的抗蚀剂12施加到半导体基板11上，同时埋入台阶差并暴露整个表面;以及用于蚀刻的薄掩模13，其中物质14如Pt，No， Au等相当大的质量混合，形成在抗蚀剂上。分片图案通过收缩，投影和曝光等传送并显影到掩模13上，并且在使用由暴露物质14构成的层作为掩模的同时蚀刻抗蚀剂12。除去由物质14组成的层，并且在使用残留抗蚀剂12作为掩模的同时蚀刻基板11，从而获得所需的微小图案。

9. 发明专利

JPS59155931A Forming method of minute pattern 失效
标题翻译：分形式的形成方法
公开(公告)号：JPS59155931A
公开(公告)日：1984-09-05
申请号：JP3121483
申请日：1983-02-25
申请人： Mitsubishi Electric Corp
发明人： NAKAJIMA MASAYUKI , MIYAKE KUNIAKI , OOGA HIROTOMO , TAKAYAMA KENJI , ITAKURA HIDEAKI , HATANAKA MASAHIRO
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： H01L21/30
摘要： PURPOSE:To obtain a minute pattern of high accuracy even in a substrate having a stepped difference by preparing a plurality of masks in one process in exposure processes and using predetermined masks in response to the film thickness of a photosensitive material applied while changing the quantity of exposure. CONSTITUTION:When minute patterns are formed to a substrate 1 with a stepped difference, a photosensitive material 2 is applied on one surface of the substrate 1, and exposed and developed, and the substrate 1 is etched to obtain the desired patterns. However, there are a thick section and a thin section in the photosensitive material 2 applied, and the desired patterns are not acquired. Consequently, a plurality of masks of different thickness are prepared in exposure processes, and the masks are used selectively in response to the thickness of the photosensitive material 2 while the quantity of exposure to the photosensitive material 2 is also adjusted. Accordingly, the desired minute patterns are acquired after development.
摘要翻译：目的：即使在具有阶梯差的基板中也可以通过在曝光处理中的一个处理中制备多个掩模来获得高精度的微小图案，并且响应于施加的感光材料的膜厚度而改变预定的掩模曝光。构成：当对具有阶梯差的基板1形成微小图案时，将感光材料2施加在基板1的一个表面上，并进行曝光和显影，并蚀刻基板1以获得所需的图案。然而，在感光材料2中存在厚的部分和薄的部分，并且不能获得期望的图案。因此，在曝光过程中准备了不同厚度的多个掩模，并且还响应于感光材料2的厚度而选择性地使用掩模，同时也调节对感光材料2的曝光量。因此，在开发之后获取所需的微小图案。

10. 发明专利

JPS59135732A Method for formation of microscopic pattern 失效
标题翻译：形成微观图案的方法
公开(公告)号：JPS59135732A
公开(公告)日：1984-08-04
申请号：JP1117583
申请日：1983-01-24
申请人： Mitsubishi Electric Corp
发明人： ITAKURA HIDEAKI , WAKAMIYA WATARU , MIYAKE KUNIAKI , NAKAJIMA MASAYUKI , OOGA HIROASA , NISHIOKA KIYUUSAKU
IPC分类号： H01L21/306
CPC分类号： H01L21/306
摘要： PURPOSE:To reduce the number of films to be formed and the number of films to be removed by a method wherein, after the surface layer only of photosensitive resin has been degenerated, a T-shaped cross sectional form is obtained by performing a processing on the photosensitive resin. CONSTITUTION:A photosensitive resin 5 is formed on a substrate 1. When a heat treatment is performed on the photosensitive resin for a short period using black body radiation 6, the surface layer only of the photosensitive resin 5 is altered, and the altered photosensitive resin 5' is formed. After a heat treatment has been performed, an exposing process is conducted. In the process wherein the unnecessary part of the photosensitive resin is removed, as the characteristics of removal for the solution, with which the altered photosensitive resin 5' will be removed, is poor when compared with those for non-altered photosensitive resin 5, a pattern having T-shaped cross section can be formed. Then, a wiring metal 4 is formed on the whole surfaced, and when the photosensitive resin is removed, a wiring metal pattern 4 can be formed.
摘要翻译：目的：通过以下方法减少要形成的膜的数量和要除去的膜的数量，其中仅在光敏树脂的表面层已经退化之后，通过进行处理，获得T形横截面形状感光性树脂。构成：在基板1上形成感光性树脂5.当使用黑体辐射6对感光性树脂进行短时间的热处理时，仅改变感光性树脂5的表面层，改变感光性树脂 5'。在进行热处理之后，进行曝光处理。在除去感光性树脂的不需要部分的方法中，与未改变的感光性树脂5相比，作为去除了改变后的感光性树脂5'的溶液的除去特性，差可以形成具有T形横截面的图案。然后，整体上形成布线金属4，并且当去除感光性树脂时，可以形成布线金属图案4。

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