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1. 发明专利

JP2005136439A Substrate treatment method 审中-公开
标题翻译：基板处理方法
公开(公告)号：JP2005136439A
公开(公告)日：2005-05-26
申请号：JP2005014374
申请日：2005-01-21
申请人： Mitsubishi Electric Corp , Shimada Phys & Chem Ind Co Ltd , 三菱電機株式会社 , 島田理化工業株式会社
发明人： KUZUMOTO MASAKI , NODA SEIJI , OYA IZUMI , MIYAMOTO MAKOTO , HORIBE HIDEO , KATAOKA TATSUO , OISHI TETSUSHI
IPC分类号： B08B3/08 , B08B3/10 , H01L21/027 , H01L21/304 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment method and a device where the device can be markedly improved in the treatment speed, by controlling the volume ratio of ozone to water vapor of the wet ozone-control gas fed to the substrate. SOLUTION: A substrate treating device treats an object of treatment, by supplying the wet ozone-containing gas wetted by a treating solution to the object of treatment on the surface of the substrate 2 in a treatment chamber 1 through a header 5 which is arranged so as to face the surface of the substrate 2. The wet ozone-containing gas includes a more amount of the vapor of the treatment solution than a saturated vapor amount at the temperature of the substrate 2 in another space, which is provided separately from the treatment chamber 1. The temperature of the wet ozone-containing gas is controlled to be 5 to 15°C higher than the temperature of the substrate. A spacing of the substrate 2 and the header 5 is 1 to 20 mm. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种基板处理方法和其中可以通过控制供给到基板的湿臭氧层控制气体的臭氧与水蒸气的体积比来显着提高处理速度的装置。解决方案：基板处理装置通过头5将处理室1中的处理溶液润湿的含湿臭氧气体供给到处理室1中的基板2的表面上，处理对象物布置成面对基板2的表面。含湿臭氧的气体包括比另一空间中的基板2的温度下的饱和蒸汽量更多的处理溶液的蒸气，其分开设置湿态含臭氧气体的温度被控制在比衬底温度高5至15℃的温度。基板2和集管5的间隔为1〜20mm。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2006000755A Water treatment apparatus 审中-公开
标题翻译：水处理设备
公开(公告)号：JP2006000755A
公开(公告)日：2006-01-05
申请号：JP2004179422
申请日：2004-06-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OYA IZUMI , YAMAUCHI TOKIKO , FURUKAWA SEIJI
IPC分类号： C02F1/78 , C02F1/32
摘要： PROBLEM TO BE SOLVED: To obtain a water treatment apparatus in which the quality of treated water can be stabilized by adjusting an exposure dose of ultraviolet rays optionally.
SOLUTION: This water treatment apparatus is provided with: a reaction tank 1 through which the water to be treated is circulated; an ozonizer 3 for supplying ozone gas to the water to be treated in the reaction tank 1; an ultraviolet lamp 2a for irradiating the water to be treated in the reaction tank 1 with ultraviolet rays; an ultraviolet absorbing agent flow passage 6 through which an ultraviolet absorbing agent is made to flow to control the exposure dose of the ultraviolet rays to be emitted from the ultraviolet lamp 2a by causing the ultraviolet absorbing agent to absorb a part of the ultraviolet rays; and an ultraviolet absorbing agent concentration adjuster 7 for controlling the concentration of the ultraviolet absorbing agent.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了获得可以通过任意调整紫外线的曝光剂量来稳定处理水的质量的水处理设备。解决方案：该水处理装置设置有：待处理水循环通过的反应槽1; 用于向反应罐1中待处理的水供给臭氧气体的臭氧发生器3; 用于用紫外线照射反应槽1中待处理水的紫外线灯2a; 使紫外线吸收剂流过紫外线吸收剂流路6，通过使紫外线吸收剂吸收紫外线的一部分来控制从紫外灯2a发射的紫外线的曝光量; 紫外线吸收剂浓度调节器7，用于控制紫外线吸收剂的浓度。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2004235316A Semiconductor etching method and manufacturing method of semiconductor device 审中-公开
公开(公告)号：JP2004235316A
公开(公告)日：2004-08-19
申请号：JP2003020418
申请日：2003-01-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIROMIZU TATSUYA , OYA IZUMI , NODA SEIJI , HORIBE HIDEO
IPC分类号： H01L21/302 , H01L21/338 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide an etching method capable of reducing an environmental load.
SOLUTION: An etching device is constituted of an ozone generating mechanism 1, a bubbling tank 3 filled with ultrapure water 2, an ultrapure water producing mechanism 4 for producing the ultrapure water 2, an acidic or alkaline gas producing mechanism 5 for producing acidic or alkaline gas and a processing tank 7 equipped with a wafer retaining table 6. Ozone and water vapor are supplied into the processing tank 7 from a gas supplying port 11, and the acidic or alkaline gas is supplied from another gas supplying port 13 to etch the semiconductor wafer 15, retained in the processing tank 7 and consisting of a GaAs base material, in a gas phase.
COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2003273059A Method and apparatus for treating substrate 审中-公开
标题翻译：用于处理基板的方法和装置
公开(公告)号：JP2003273059A
公开(公告)日：2003-09-26
申请号：JP2002077112
申请日：2002-03-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NODA SEIJI , HORIBE HIDEO , MIYAMOTO MAKOTO , OYA IZUMI , KUZUMOTO MASAKI
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for treating a substrate, in which a metal wiring formed in advance on a substrate is entirely suppressed from eroding and organic contaminants is removed, related to the method for treating a substrate where the organic contaminants on the substrate surface is removed in a mixed gas containing a wet-ozone-contained gas which is moistened with steam and a basic gas. SOLUTION: The organic contaminants on the substrate surface is removed in the mixed gas, which contains wet-ozone-contained gas which is moistened with steam and basic gas. The temperature of the mixed gas is set higher than that of the substrate. COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于处理基板的方法和装置，其中预先在基板上形成的金属布线被完全抑制以免侵蚀和有机污染物被去除，与用于处理基板的方法有关在含有湿蒸气和碱性气体的含湿臭氧的气体的混合气体中除去基板表面上的有机污染物。解决方案：在混合气体中除去衬底表面上的有机污染物，混合气体含有湿蒸汽和含碱性气体的含湿臭氧的气体。混合气体的温度设定为高于基板的温度。版权所有（C）2003，JPO

5. 发明专利

JP2001261151A TREATMENT APPARATUS 失效
公开(公告)号：JP2001261151A
公开(公告)日：2001-09-26
申请号：JP2000084026
申请日：2000-03-24
申请人： SHIMADA PHYSICAL CHEM IND CO , MITSUBISHI ELECTRIC CORP
发明人： KATAOKA TATSUO , OISHI TETSUSHI , OMORI MASASHI , OYA IZUMI , NODA SEIJI , MIYAMOTO MAKOTO , KUZUMOTO MASAKI
IPC分类号： B65G49/00 , B01J19/00 , B65G49/02 , B65G49/07 , C23F4/00 , H01L21/205 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To prevent outward leak of a treatment gas when carrying a substrate into an internal space of a treatment chamber where the substrate, i.e., treated object, is treated, or when carrying the substrate out of the treatment chamber. SOLUTION: In this treatment apparatus, the treatment gas is filled in the treatment chamber, and the treated object is treated by the treatment gas. The treatment apparatus includes a shutoff means having a liquid shutting off the inside of the treatment chamber from the outside of the treatment chamber.

6. 发明专利

JP2004253206A Method of manufacture for light emitting element 审中-公开
公开(公告)号：JP2004253206A
公开(公告)日：2004-09-09
申请号：JP2003040971
申请日：2003-02-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAITO TEIJI , NODA SEIJI , OYA IZUMI , INAGE KOUKI
IPC分类号： H01J9/227 , H01J11/12 , H01J11/22 , H01J11/24 , H01J11/26 , H01J11/34 , H01J11/42 , H01J11/02
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacture for light emitting element, in which heat deterioration of phosphor can be prevented and the light emitting element with superior light emitting property can be obtained.
SOLUTION: The process to form a phosphor layer comprises a process to coat phosphor paste containing phosphor and organic compound, and a process to apply an ozone process to the coated phosphor paste, under a condition of lower temperature than the temperature at which the organic compound is dissolved, and to eliminate at least one part of the organic compound.
COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2001223206A SUBSTRATE TREATING METHOD AND DEVICE 失效
公开(公告)号：JP2001223206A
公开(公告)日：2001-08-17
申请号：JP2000118433
申请日：2000-04-19
申请人： MITSUBISHI ELECTRIC CORP , SHIMADA PHYSICAL CHEM IND CO
发明人： KUZUMOTO MASAKI , NODA SEIJI , OYA IZUMI , MIYAMOTO MAKOTO , HORIBE HIDEO , KATAOKA TATSUO , OISHI TETSUSHI
IPC分类号： B08B7/00 , C23G5/00 , G03F7/42 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating method and a device where the device can be markedly improved in the treatment speed by controlling the volume ratio of ozone to water vapor of wet ozone-controlling gas fed to the substrate. SOLUTION: A substrate treating device treats the surface of a substrate 2 as an object of treatment, supplying wet ozone-containing gas wetted by a treating solution onto the surface of the substrate 2. The treating device is equipped with a substrate heating means 4 which keeps the substrate 2 above a room temperature, a wetting means 7 which wets ozone-containing gas with a treatment solution, a feed means 5 which feeds ozone-containing gas to the surface of the substrate 2, a gas pipe 8 which connects the wetting means 7 and the feed means 5 together, and a heating means 8 which heats up the wetting means, the feed means, and the gas pipe to the same temperature with the substrate or above.

8. 发明专利

JP2000262874A METHOD AND APPARATUS FOR PRODUCING OZONE WATER 失效
公开(公告)号：JP2000262874A
公开(公告)日：2000-09-26
申请号：JP6837199
申请日：1999-03-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAMOTO MAKOTO , OYA IZUMI , NODA SEIJI , KUZUMOTO MASAKI , KANEGAE YUZO
IPC分类号： B01F1/00 , C01B13/10
摘要： PROBLEM TO BE SOLVED: To produce ozone water high in ozone concentration with the use of ultrapure water by a charge control substance is added into the ultrapure water, and the water is passed through fluororesin hollow fibers in a method for producing ozone water in which ozone is dissolved in the ultrapure water through the hollow fibers. SOLUTION: By the control of a control part 3, oxygen of a raw material gas is mixed with nitrogen and supplied to an ozone gas producing machine 2. In the machine 2, discharge is generated corresponding to input from a power source 4, part of the raw material gas is ozonized into an ozone-containing gas, which is supplied to a fluororesin hollow fiber module 1 by way of a flow rate controller 17. Ultrapure water to be controlled by a flow rate controller 19 for ozone water and others is mixed with a charge control substance such as hydrochloric acid while being controlled by a flow rate controller 18 and supplied to the module 1. The ozone-containing gas and the ultrapure water are subjected to gas-liquid contact in pores. After that, the ozone-containing gas is discharged with ozone decomposed by a residual ozone decomposition device 11.

9. 发明专利

JPH1183820A SMELL MEASURING INSTRUMENT 失效
公开(公告)号：JPH1183820A
公开(公告)日：1999-03-26
申请号：JP23589897
申请日：1997-09-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： HANASATO YOSHIO , KIMURA SAORI , NUSHIHARA AKIRA , KAMIYAMA TOMOTSUGU , OYA IZUMI , YOSHIDA SHOZO
IPC分类号： G01N27/12 , G01N5/02 , G01N30/00
摘要： PROBLEM TO BE SOLVED: To measure a smell substance sensitively and precisely by providing an IC(inorganic carbon) component constituted of an inorganic carbon compound in which an inorganic carbon compound gas is generated by a carbon oxide existing in a measured water solution and oxidation or gas removing means of an IC component source. SOLUTION: IC component removing means uses an ion exchanger 10, thereby to remove an IC component by ion exchange. A smell detection part 11 mounts a smell sensor. A measured water solution supply part 14 samples a measured water solution, and supplies this to a smell purge part 13. A measured water solution 12 uses water solution filtered by the measured water solution supply part 14, an IC component being reduced by the ion exchanger 10. The smell purge part 13 purges a smell substance from a measurement object water solution 12 to an air phase, and a measured gas is obtained. A carrier gas supply part 15 supplies a smell gas to the smell detection part 11. A measured water solution discharge part 17 discharges a measured water solution 12 from the smell purge part 13 after measurement.

10. 发明专利

JP2006110522A Water treatment apparatus and water treatment method 审中-公开
标题翻译：水处理设备和水处理方法
公开(公告)号：JP2006110522A
公开(公告)日：2006-04-27
申请号：JP2004303195
申请日：2004-10-18
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUKAWA SEIJI , YASUNAGA NOZOMI , OYA IZUMI , YAMAUCHI TOKIKO
IPC分类号： C02F1/78 , C02F1/32 , C02F1/72
摘要： PROBLEM TO BE SOLVED: To solve the problem that an increase in an ozone injection rate to water to be treated from the need for increasing the ozone injection rate to water to be treated to raise the removal efficiency of persistent chemical substances in it, promotes the generation of bromate ions.
SOLUTION: In a hydrogen peroxide addition ozonation tank as a first stage, hydroxy radicals are generated by reaction of ozone with hydrogen peroxide to decompose the persistent chemical substances in the water to be treated. In an ultraviolet treatment tank as a second stage, ultraviolet light radiated from an ultraviolet lamp acts on the residual hydrogen peroxide in the water to be treated to generate hydroxy radicals, which decrease the concentration of hydrogen peroxide and promotes the decomposition and removal of the persistent chemical substances.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了解决从对待处理的水增加臭氧注入速率到提高其中持久化学物质的去除效率的待处理水的臭氧注入速率的增加的问题，促进溴酸根离子的产生。解决方案：在作为第一阶段的过氧化氢加成臭氧化槽中，通过臭氧与过氧化氢的反应产生羟基，以分解被处理水中的持久化学物质。在作为第二阶段的紫外线处理槽中，从紫外线灯照射的紫外线作用于被处理水中的残留过氧化氢，生成羟基，这降低了过氧化氢的浓度，促进了持久性的分解和除去化学物质。版权所有（C）2006，JPO＆NCIPI

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