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1. 发明专利

JPH02153517A MANUFACTURING EQUIPMENT OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02153517A
公开(公告)日：1990-06-13
申请号：JP30809988
申请日：1988-12-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAYAMA KENJI
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To set an optimum period of exposure against the irregularity generating between processes, lots and wafers respectively by a method wherein a detection light is projected on a wafer, an optimum exposure period is computed by detecting the threshold value of the amount of exposure, and the obtained value is fed back to an exposure system. CONSTITUTION:The strength of reflection when a detection light 11 is projected on a photoresist is detected by a photomultiplier 10 of a detection system. An exposure amount threshold value detecting pattern is formed by exposing a pattern 14 on a part of a wafer 5 by changing optical density. At this time, using a reticle blind 12, the exposure is conducted by covering the region other than the pattern 14 where optical density is changed. Using the threshold value of exposure amount determined by the detection system, an optimum exposure period is computed and the result is fed back to the exposure system. Through these procedures, the optimum exposure period against the irregularity between processes, lots and wafers can be set.

2. 发明专利

JPS63111616A MANUFACTURE OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS63111616A
公开(公告)日：1988-05-16
申请号：JP25900986
申请日：1986-10-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAYAMA KENJI
IPC分类号： G01B21/00 , G12B5/00 , H01L21/027 , H01L21/30 , H01L21/68
摘要： PURPOSE:To automatically correct the inclining level of a semiconductor wafer at each wafer thereby to improve the quality and the productivity of the wafer by providing a drive motor controlled by a detection signal of wafer height detecting means in height regulating means provided at least three positions of a rotating mechanism with respect to a support and regulating the height positions of the support at peripheral edge parts. CONSTITUTION:A wafer 5 is placed on an attracting board 1 and attracted by vacuum. Then, the heights of both side positions A1, A2 in an X-direction and at both sides of a Y-direction on a wafer 5 are measured by an automatic focusing mechanism attached to the body of an exposure unit, not shown, by moving it in X-and Y- directions of an XY table. Then, the differences of the heights A1 and A2, and B1 and B2 are calculated from the height measuring results to produce the inclining level of the wafer 5 as an output signal, compared with a predetermined value stored in advance. If it is out of the predetermined value, an optimization for correcting the inclination of the wafer 5 is discovered from the calculated value of the inclination of the wafer 5, the number of pulses is calculated and output. A drive motor 13 of height regulating means 12 is driven by the detection signal, and the inclination of the wafer 5 is corrected by regulating the height positions of the peripheral edge parts of a support 2.

3. 发明专利

JPS604218A COATING METHOD OF RESIST MATERIAL ON SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS604218A
公开(公告)日：1985-01-10
申请号：JP11305683
申请日：1983-06-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAYAMA KENJI , NISHIOKA KIYUUSAKU
IPC分类号： B05D1/40 , G03F7/16 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain a uniform film thickness by a method wherein a resist material is evaporated in a vacuum and a semiconductor wafer is put in that atmosphere. CONSTITUTION:A semiconductor wafer 2 held by a wafer guide 6 is placed in a chamber 5 and the chamber 5 is evacuated through an exhaust outlet 7. After a pressure in the chamber 5 is lowered to a suitable value, a resist material 4 is poured into the chamber 5 through a resist inlet 8. Then the resist material 4 is evaporated and the inside of the chamber 5 becomes the atmosphere of the evaporated material and the resist material 4 adheres to the semiconductor wafer 2. With this constitution, a resist film with a uniform thickness and small density of defects such as pin-holes can be obtained.

4. 发明专利

JPS59194426A Optical cvd device 失效
标题翻译：光学CVD装置
公开(公告)号：JPS59194426A
公开(公告)日：1984-11-05
申请号：JP6855383
申请日：1983-04-18
申请人： Mitsubishi Electric Corp
发明人： TAKAYAMA KENJI , FUJIWARA KEIJI , ITAKURA HIDEAKI , HATANAKA MASAHIRO , ITOU HIROMI , SATOU SHINICHI
IPC分类号： H01L21/205
CPC分类号： H01L21/0262 , H01L21/02532
摘要： PURPOSE:To reduce the cloud of a transmitting window by emitting a light emitted through the window via a reflecting optical system on a substrate. CONSTITUTION:A light ray from a mercury lamp 1 is converged via a converging lens 9, and passed through a transmitting window 3. A reflection optical system which has a spherical mirror 10 provided with an incident hole 11 at the center and a convex mirror 12 is provided between the window 3 and a substrate 7. The light passed through the window 3 is passed through the hole 11 of the mirror 10, reflected on the mirror 12, further reflected on the mirror 10 to emit the substrate 7. Accordingly since the window 3 is not exposed directly with reaction gas atmosphere, the cloud of the window due to the reaction product can be reduced.
摘要翻译：目的：通过在基板上经由反射光学系统发射通过窗口发出的光来减少发射窗口的云。构成：来自水银灯1的光线经会聚透镜9会聚，通过透光窗3.具有球面镜10的反射光学系统在中心设有入射孔11，凸面镜12 设置在窗口3和基板7之间。穿过窗口3的光穿过反射镜10的孔11，在反射镜12上反射，进一步在反射镜10上反射以发射基板7.因此窗口3不会直接暴露在反应气体气氛中，可以减少由于反应产物引起的窗户云。

5. 发明专利

JPS59155933A Forming method of minute pattern 失效
标题翻译：分形式的形成方法
公开(公告)号：JPS59155933A
公开(公告)日：1984-09-05
申请号：JP3121783
申请日：1983-02-25
申请人： Mitsubishi Electric Corp
发明人： MIYAKE KUNIAKI , HATANAKA MASAHIRO , NISHIOKA KIYUUSAKU , WAKAMIYA WATARU , NAKAJIMA MASAYUKI , TAKAYAMA KENJI
IPC分类号： H01L21/027 , G03F7/095 , G03F7/20 , G03F7/26 , G03F7/38 , G03F7/40
CPC分类号： G03F7/40
摘要： PURPOSE:To obtain a resin mask of a minute pattern by laminating and applying first and second photosensitive resins on a material to be etched, exposing and developing and treating the second resin to bore a predetermined opening section, burying the opening section with an organic silicon compound and thermally treating the opening section at a low temperature and removing the first and second resins through etching while using the opening section as a mask. CONSTITUTION:A first photosensitive resin 2 is applied onto a material 1 to be etched, and a second photosensitive resin 3 in approximately 3,000Angstrom thickness thin in an extent that a predetermined pattern size is obtained is applied onto the resin 2. The resin 3 is exposed and developed and treated to bore prescribed opening sections, the opening sections are buried with an organic silicon compound 4, and the compound is cured through heat treatment at a low temperature. Minute patterns consisting of the compounds 4 and the resins 2 under the compounds are acquired through anisotropic etching by O2 plasma while using the compounds 4 as masks, and the material 1 is etched while employing the patterns as masks.
摘要翻译：目的：为了通过将第一和第二感光树脂层压并施加到待蚀刻的材料上来获得微小的图案的树脂掩模，曝光和显影处理第二树脂以穿孔预定的开口部分，将开口部分用有机硅复合并在低温下热处理开口部分，并且在使用开口部分作为掩模的同时通过蚀刻去除第一和第二树脂。构成：将第一感光性树脂2施加到要蚀刻的材料1上，并且将获得预定图案尺寸的程度较薄的约3,000A厚度的第二感光性树脂3施加到树脂2上。树脂3是曝光和显影处理以钻孔规定的开口部分，开口部分用有机硅化合物4掩埋，并且化合物通过在低温下的热处理而固化。由化合物4和化合物2下的树脂2组成的微小图案通过O 2等离子体的各向异性蚀刻而获得，同时使用化合物4作为掩模，并且在使用图案作为掩模的同时蚀刻材料1。

6. 发明专利

JPS58165330A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58165330A
公开(公告)日：1983-09-30
申请号：JP4959982
申请日：1982-03-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUKUMOTO HAYAAKI , TAKAYAMA KENJI , NISHIOKA KIYUUSAKU , ITOU HIROMI , HIRAYAMA MAKOTO
IPC分类号： H01L21/205 , C23C16/04 , C23C16/48 , H01L21/268 , H01L21/285 , H01L21/31
摘要： PURPOSE:To selectively form a thin film without using a photolithographic technique by a method wherein a photochemical reaction is generated by selectively irradiating a laser light on the substrate. CONSTITUTION:An introducing gas is selected corresponding to the thin film which is going to be formed, and a mixed gas is supplied into a reaction chamber 7 through an introducing port 9 and a lead-out part 10. A semiconductor substrate 12 is supported in the gas and the temperature at which the reaction with the supplied gas is not accelerated is maintained by a heating coil 13. The laser light 4 selected to the excitation wavelength, with which reaction gas will be highly absorbed, irradiated on the position of the prescribed surface of the semiconductor substrate 12 through an entrance window 8 by a mirror 6 which is controlled by a position controlling system 5. Thin films such as an insulating film, a semiconductor film, a metal film and the like are selectively formed on the part where the laser beam is irradiated by the generation of a photochemical reaction. According to circumstances, these thin films are removed by performing a selective etching.

7. 发明专利

JPS58145145A FORMATION OF INTERELEMENT ISOLATION INSULATING FILM FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58145145A
公开(公告)日：1983-08-29
申请号：JP2951582
申请日：1982-02-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIRAYAMA MAKOTO , FUKUMOTO HAYAAKI , NISHIOKA KIYUUSAKU , ITOU HIROMI , TAKAYAMA KENJI
IPC分类号： H01L21/76 , H01L21/316 , H01L21/762
摘要： PURPOSE:To obtain the interelement isolation insulating film of microscopic measurements having excellent reproducibility by a method wherein the generation of bird's beaks is eliminated by performing an etching and a thermal oxidaization on a silicon substrate. CONSTITUTION:An ordinary resist film 2 is formed on the surface of a silicon substrate 1, a window 3 is provided on the resist film 2, and the region whereon an element isolation insulating film will be formed is positioned using said resist film 2 as a mask. Then, a cross sectional shape recess 4 is formed using an anisotropic etching method wherein an etching in depthwise direction of the silicon substrate can be performed. Then, after the silicon film 2 has been removed, the recess 4 is buried by an oxide film and an element isolation insulating film 5 is formed by performing a thermal oxidization on a silicon substrate 2, and then the element surface can also be flattened by removing the thermal oxide film generated on the outside region of the isolated region.

8. 发明专利

JPH05166693A EXPOSURE SYSTEM 失效
公开(公告)号：JPH05166693A
公开(公告)日：1993-07-02
申请号：JP33183191
申请日：1991-12-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAYAMA KENJI
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To reduce the dispersion in resist pattern dimensions due to the variations of resist film thickness and substrate wafer thickness to improve patterning accuracy by adjusting the exposure time before each shot. CONSTITUTION:When light of a given wavelength is applied to a photoresist 6 on a substrate wafer 5, the transparency is increased and saturated in a time. This time when the transparency saturation starts coincides with the threshold (Eth) of the photoresist 6. Based on this fact, an exposure energy proper for each shot to each wafer is obtained by monitoring the saturation start time shot by shot with a saturation start point measuring system 14 through a means for receiving reflected light and feeding back this data for the next exposure shot.

9. 发明专利

JPH01276139A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH01276139A
公开(公告)日：1989-11-06
申请号：JP10696888
申请日：1988-04-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAYAMA KENJI , TANAKA RYOKO
IPC分类号： G03F1/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To prevent a chromium defect due to discharge and to improve the durability of the device by forming a transparent conductive thin film as a buffer film between the surface of a substrate and a chromium film, and thus equalizing chromium patterns in potential. CONSTITUTION:The transparent conductive film 5 is formed as the buffer film between the mask substrate 3 which uses quartz and the chromium film 4 where a target pattern is to be formed. This film 5 is used as the buffer film to generate a potential gradient between the substrate 3 and buffer film 5, but there is no potential gradient generated between the buffer film 5 and a chromium pattern 4. Therefore, variance in charge congestion due to a difference in chromium pattern shape is eliminated to prevent discharge. Consequently, the defect due to the discharge of the chromium pattern is prevented to improve the durability, and high accuracy is obtained.

10. 发明专利

JPS6335096B2 失效
公开(公告)号：JPS6335096B2
公开(公告)日：1988-07-13
申请号：JP3121783
申请日：1983-02-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： MYAKE KUNIAKI , HATANAKA MASAHIRO , NISHIOKA KYUSAKU , WAKAMYA WATARU , NAKAJIMA MASAYUKI , TAKAYAMA KENJI
IPC分类号： H01L21/027 , G03F7/095 , G03F7/20 , G03F7/26 , G03F7/38 , G03F7/40

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