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1. 发明专利

JPH01169967A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01169967A
公开(公告)日：1989-07-05
申请号：JP33267187
申请日：1987-12-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAKUSHIJI HISAO , OOGA HIROTOMO , NAKAMURA HIROSHI
IPC分类号： H01L29/78 , H01L21/265 , H01L21/336
摘要： PURPOSE:To prevent the unequal formation of a source region and a drain region due to the shadow of a gate electrode at the time of ion implantation by tapering the sidewall of a conductor serving as the gate electrode. CONSTITUTION:An oxide film 3 serving as a gate oxide film is formed on the main surface of a semiconductor substrate 1, and a gate electrode 6, a sidewall of which is tapered, is formed on the oxide film 3. Impurity regions 8 as a source and a drain are shaped to the main surface of the semiconductor region 1 by implanting impurity ions 7. Accordingly, since the sidewall of the gate electrode 6 is tapered even when the ions are implanted obliquely on ion implantation, a shadow is hardly formed in the gate electrode 6, thus uniformly forming the source region and the drain region.

2. 发明专利

JPS6279626A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6279626A
公开(公告)日：1987-04-13
申请号：JP22063585
申请日：1985-10-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： OZAKI KOJI , EMORI TAKAHISA , OOGA HIROTOMO , ITO HIROMI
IPC分类号： H01L21/768 , H01L21/31
摘要： PURPOSE:To make a surface flat without the rediffusion of an impurity by increasing the power of a CVD equipment together with forming an insulation film by CVD at a temperature of the extent that no impurity in a semiconductor substrate is rediffused. CONSTITUTION:A semiconductor substrate 1 which has a rugged pattern 2 on its surface is contained in a chamber for CVD and an insulation film 4 is formed by plasma CVD at a temperature of approx. 800 deg.C. In this case, if the power of a CVD equipment is increased, sputtering effect appears and reflowing can be achieved. By increasing the power of the plasma CVD in such a way, the reflowing of the insulation film can be done at a low temperature on the semiconductor substrate 1 which has a rough pattern simultaneously with the formation of the insulation film, so the surface can be made flat without the redistribution of an impurity introduced in the semiconductor substrate.

3. 发明专利

JPS6273623A PHOTOCHEMICAL REACTOR 失效
公开(公告)号：JPS6273623A
公开(公告)日：1987-04-04
申请号：JP21302785
申请日：1985-09-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITO HIROMI , OZAKI KOJI , EMORI TAKAHISA , OOGA HIROTOMO
IPC分类号： H01L21/205 , H01L21/263 , H01L21/302 , H01L21/31
摘要： PURPOSE:To contrive the efficient utilization of the excitation light emitted from a lamp by providing an incident window functioning also as a lamp in a reaction vessel and arranging a reflective member on the outer surface of the incident window unitarily. CONSTITUTION:As an incident window 1a functions also as a lamp, only two planes, front and back sides of a structural member of the lamp become the surfaces giving a reflection loss before light enters a reaction vessel 7 and accordingly the reflection loss is reduced exceedingly. Also, a light reflecting film 2 is formed on a surface of the lamp on opposite side to the reaction vessel 7 by vapor deposition, so that the reflection of light to the side of the reaction vessel occurs inside the lamp due to the reflective film 2. Accordingly, there is no need of evacuation or inert gas purge of an optical path and the large spaces for them become unnecessary. For the light irradiation of a large- area substrate, a plane lamp is used with its extent made vertically. Consequently, an excitation light can be utilized efficiently.

4. 发明专利

JPS61276338A WAFER SURFACE INSPECTING DEVICE 失效
公开(公告)号：JPS61276338A
公开(公告)日：1986-12-06
申请号：JP11913485
申请日：1985-05-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIHATA MIKIO , OOGA HIROTOMO
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , G01R31/26 , H01L21/66
摘要： PURPOSE:To prevent dusts from adhering to the surface of a wafer by conveying the wafer by holding it vertically, observing and inspecting the wafer. CONSTITUTION:A carrier 13 which vertically contains wafers 14 is mounted on a feeding base 19 to sequentially raise by a lifter 20 the wafers 14, to chuck the wafers vertically by a chuck 17 at the back surface, and to move them to deliver to a vacuum chuck 6. The wafer 14 is chucked at the position displaced from the center. The magnification of a lens 10 is fixed, a focus controller 2 and an operating rod 3 are operated to observe and inspect the wafer. Only the good wafer is contained by a reverse operation from a receiving chuck 22 to a vacant carrier 13 vertically. According to this construction, it prevents foreign materials such as dusts from adhering to the surface of the wafer, thereby improving the yield.

5. 发明专利

JPS60145610A ION BEAM DRAWING DEVICE 失效
公开(公告)号：JPS60145610A
公开(公告)日：1985-08-01
申请号：JP296384
申请日：1984-01-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUKAWA TAKAYUKI , TSUKAMOTO KATSUHIRO , ARIMA HIDEAKI , OOGA HIROTOMO
IPC分类号： H01J37/317 , H01J37/00 , H01L21/265
摘要： PURPOSE:To simply process, to use a stable mask and to readily alter ion nucleus by emitting an ion beam obliquely from above to a mask pattern made of a material which is secured onto a thick supporting substrate and contains object ion element to draw the prescribed shape by the secondary ion beam, and projecting it. CONSTITUTION:An ion beam 10 of uniform strength is produced from an ion generation source using gas which can be readily ionized like argon, xenon, oxygen or nitrogen, and incident obliquely from above to the surface of a mask pattern 12 on a supporting substrate 11. A large quantity of the secondary ion beam 12a of the element for forming a pattern is dissipated in response to the shape of the pattern. A potential applied between the pattern 12 and a semiconductor substrate 8 is regulated by accelerating means, thereby applying a suitable accelerating electric field to accelerate it to draw the pattern by the implanted ion layer 9 in the same manner as the conventional device.

6. 发明专利

JPS5945174B2 JPS5945174B2 - 失效
公开(公告)号：JPS5945174B2
公开(公告)日：1984-11-05
申请号：JP14445878
申请日：1978-11-20
申请人： Mitsubishi Electric Corp
发明人： OOGA HIROTOMO
IPC分类号： H01J37/05 , H01J37/317 , H01J49/30 , H01L21/265

7. 发明专利

JPS55128869A SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
公开(公告)号：JPS55128869A
公开(公告)日：1980-10-06
申请号：JP3747279
申请日：1979-03-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： OOGA HIROTOMO , SAKURAI HIROMI
IPC分类号： H01L29/73 , H01L21/20 , H01L21/331 , H01L27/12 , H01L29/10
摘要： PURPOSE:To provide a low collector and base capacity of a semiconductor device by perforating an opening at an insulating film on an n -type silicon substrate, forming monocrystal and non-monocrystal epitaxial layers of n -type thereon, diffusing p reaching the substate, and forming a shallow n-type emitter layer on the monocrystal layer surface. CONSTITUTION:Openings are forforated at SiO2 film 103 on an n -type silicon substrate 101, an n -type epitaxial layer 102 is formed thereon. A Br ion is implanted thereon to fomr a p -type layer 104 thereon, a CVD SiO2 film 5 is coated thereon, expanded and diffused with N2. Since diffusing speed is low in the non-monocrystal on the SiO2 103 and high in the nonocrystal on the substrate, it is selectively expanded to largely reduce the collector and base capacity. Openings are selectively perforated at the SiO2 film 105, a resist 106 is coated thereon, As ion is implanted thereon, and an n -type emitter 107 is formed thereon. The resist is then removed and annealed, and an electrode 108 is attached thereto. Since the active layer is existed only in the monocrystal layer and all pn junctions are extisted in the no- defect monocrystal layer in this configuration, leakage current is reduced to be stable.

8. 发明专利

JPS5385175A MONITORING DEVICE OF CHARGED PARTICLE BEAM RADIATION APPARATUS 失效
公开(公告)号：JPS5385175A
公开(公告)日：1978-07-27
申请号：JP66777
申请日：1977-01-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO , OOGA HIROTOMO
IPC分类号： H01J37/317 , G01R31/302 , G21K5/00 , G21K5/04 , H01L21/027 , H01L21/26 , H01L21/265 , H01L21/66
摘要： PURPOSE:To constantly monitor ion implantation by making the deflecting signals of charged particle beams to the input of each axis of an oscilloscope and making the secondary electron quantities from the target part to the luminance input of the oscilloscope.

9. 发明专利

JPH0379524A WAFER TRANSPORTING MACHINE EQUIPPED WITH AUTOMATIC TRANSPORTING MECHANISM 失效
公开(公告)号：JPH0379524A
公开(公告)日：1991-04-04
申请号：JP21364589
申请日：1989-08-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： OOGA HIROTOMO
IPC分类号： B65H3/08 , B65G49/07 , H01L21/677 , H01L21/68
摘要： PURPOSE:To easily take out a wafer by delaying the adsorbing and carrying out of the wafer until each value of pressure sensors becomes over a predetermined pressure, when the wafer is taken-in/out. CONSTITUTION:A plurality of pressure senors 5 are installed onto the adsorbed part 3 of a wafer 1 in taking-in/out operation. When the wafer 1 is adsorbed, a transport part 2 which adsorbs the wafer 1 is turned or vertically operated so that each value of a plurality of pressure sensors 5 becomes over a predetermined value, and the wafer 1 is taken out independently of the state of a carrier 6 into which the wafer 1 is accommodated.

10. 发明专利

JPH02256255A WAFER HANDLING JIG 失效
公开(公告)号：JPH02256255A
公开(公告)日：1990-10-17
申请号：JP7920189
申请日：1989-03-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： OOGA HIROTOMO
IPC分类号： B65G1/04 , B65G1/00 , H01L21/677 , H01L21/68
摘要： PURPOSE:To make it possible to take out a wafer readily without contact with neighboring wafers when the wafer is taken out by a constitution wherein a contact part is in perpendicular to or in parallel with the surface of the wafer based on the position of a wafer cassette regardless of the position of a holding part. CONSTITUTION:An angle detector 3 detects an angle at which a contact part 1 is kept in the vertical direction all the time and a reference angle for setting the contact part 1 at an arbitrary angle. An angle detector 8 detects the position of the contact part 1 with respect to a holding part 9. The contact part 1 is operated by the following ways: the contact part 1 is vertical all the time when a wafer cassette and the like containing semiconductor wafers are set at the horizontal position; and the contact part 1 is in parallel with the surface of the semiconductor wafer in the case when the wafer cassette and the like are set at an arbitrary angle. In this way, the wafer can be taken out readily without contact with the wafers at the front and rear parts when the wafer is taken out.

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