专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2006287770A Operational amplifier, amplitude modulator using same, and transmitter 审中-公开
标题翻译：操作放大器，使用它的振幅调制器和发射器
公开(公告)号：JP2006287770A
公开(公告)日：2006-10-19
申请号：JP2005107116
申请日：2005-04-04
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANABE MITSURU , AKIZUKI TAIJI , TANAKA KOICHIRO , HINO TAKUO
IPC分类号： H03F1/06 , H03C1/36 , H03F3/24 , H03F3/45
CPC分类号： H04L27/361 , H03C3/40 , H03F1/0205 , H03F1/0216 , H03F1/0227 , H03F1/0244 , H03F1/32 , H03F1/3211 , H03F3/24 , H03F3/45085 , H03F3/45475 , H03F2200/324 , H03F2200/336 , H03F2200/504 , H03F2200/507 , H03F2200/511
摘要： PROBLEM TO BE SOLVED: To provide a highly efficient operational amplifier, an amplitude modulator and a wide band and highly efficient transmitter of an EER (Envelope Elimination and Restoration) method. SOLUTION: A signal for switching a switching circuit 107 is output from a driver circuit 108 according to signal amplitude information to be input from a signal source 100 and a plurality of supply voltage 106 of a power amplifier circuit 104 in output of the operational amplifier 113 are switched. Thus, the required minimum DC power required for linear amplification is provided to voltage amplitude which should be outputted and efficiency of the operational amplifier 113 is enhanced. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种高效运算放大器，幅度调制器和EER（消除信封和消除信号）方法的宽带和高效率发射器。解决方案：根据从信号源100输入的信号幅度信息和驱动电路108输出的功率放大器电路104的多个电源电压106，输出用于切换开关电路107的信号。运算放大器113被切换。因此，线性放大所需要的最小DC功率被提供给应该输出的电压幅度，并且运算放大器113的效率提高。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2005260703A Power composite type amplifier 审中-公开
标题翻译：功率复合型放大器
公开(公告)号：JP2005260703A
公开(公告)日：2005-09-22
申请号：JP2004071149
申请日：2004-03-12
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： AKIZUKI TAIJI , TANABE MITSURU
IPC分类号： H03F3/60 , H03F3/68 , H04B1/04
摘要： PROBLEM TO BE SOLVED: To provide a power composite type amplifier using a field effect transistor that performs a stable operation. SOLUTION: In a closed loop composed of a power distributor 5, a power compositor 6 and field effect transistors 3 and 4, bandpass filters 19 and 21 that allow only a carrier fundamental frequency to pass through are inserted to attenuate loop gain in all frequency bands other than the carrier fundamental frequency to be a level lower than 0dB. Consequently, no oscillation condition is satisfied and a stable combined power amplifier can be realized in a frequency domain of a low frequency band where oscillation occurs and the gain of the field effect transistors 3 and 4 is high and in each harmonic frequency that occurs as a distortion component. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用执行稳定操作的场效应晶体管的功率复合型放大器。解决方案：在由功率分配器5，功率合成器6和场效应晶体管3和4组成的闭环中，插入仅允许载波基频通过的带通滤波器19和21被插入以衰减环路增益载波基频以外的所有频带都要低于0dB。因此，不产生振荡条件，并且可以在发生振荡的低频带的频域中实现稳定的组合功率放大器，并且场效应晶体管3和4的增益高，并且在作为失真分量。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004320735A Transmission circuit 有权
公开(公告)号：JP2004320735A
公开(公告)日：2004-11-11
申请号：JP2004086475
申请日：2004-03-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANABE MITSURU , TANAKA KOICHIRO , SAITO NORIAKI
IPC分类号： H04L27/36 , H04B1/04
摘要： PROBLEM TO BE SOLVED: To output a modulated signal whose spectrum hardly deteriorates without extremely widening bandwidth of an amplitude modulated voltage or a phase modulated signal to be imparted to a high frequency power amplifier. SOLUTION: The transmission circuit includes a modulated signal generating circuit 1 for outputting a modulated signal, an envelope detecting part 2 for outputting the amplitude modulated voltage, an amplitude roll-off LPF 10 for attenuating the amplitude modulated voltage using a damping property represented by an exponential function in which argument is proportional to the power with respect to increase of a frequency, a power supply voltage generating part 3 for generating a power supply voltage in accordance with an amplitude value of the amplitude modulated voltage, a phase detecting part 4 for outputting the phase modulated signal, a phase roll-off LPF 12 for attenuating the phase modulated signal using a damping property represented by an exponential function in which argument is proportional to the power with respect to increase of a detuning frequency to a central frequency, and a high frequency power amplifier 6. COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2002232502A SIGNAL GENERATING CIRCUIT 失效
公开(公告)号：JP2002232502A
公开(公告)日：2002-08-16
申请号：JP2001029526
申请日：2001-02-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKINAMI KOJI , ADACHI HISASHI , TANABE MITSURU , FUKUDA KENJI
IPC分类号： H04L27/38
摘要： PROBLEM TO BE SOLVED: To solve a problem of a conventional radio unit conducting direct modulation and direct demodulation that cannot have realized a 90-degree phase shifter when the frequency of transmission reception gets higher. SOLUTION: The signal generating circuit is configured such that two oscillators 100, 101 and two mixers 103a, 103b are used and after output signals from the one oscillator are distributed to the mixers with a phase difference of 90-degrees, the mixers mix signals outputted from the other local oscillator and a desired local oscillation LO signal is obtained.

5. 发明专利

JP2002171139A HIGH FREQUENCY AMPLIFIER 失效
公开(公告)号：JP2002171139A
公开(公告)日：2002-06-14
申请号：JP2000366749
申请日：2000-12-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANABE MITSURU , IWANAGA JUNKO
IPC分类号： H03F1/34 , H03F1/26 , H03F3/193
摘要： PROBLEM TO BE SOLVED: To provide a high frequency amplifier so designed as to avoid the negative feedback from an output to an input, thereby improving the gain. SOLUTION: A parallel resonator circuit 30 comprises a parallel connected circuit of an inductor 31 and a capacitor 32, and is connected between the output of an input matching circuit 210 and the drain of an FET 10. The inductor 31 and the capacitor 32 have values selected so that a parallel connection circuit 130 of a gate-drain capacitance 11 with the resonator circuit 30 performs parallel resonance at a frequency f0 in a required frequency range for operating the high frequency amplifier.

6. 发明专利

JP2001185739A DIODE AND ITS MANUFACTURING METHOD, AND COPLANAR LINE 失效
公开(公告)号：JP2001185739A
公开(公告)日：2001-07-06
申请号：JP2000304472
申请日：2000-10-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IWANAGA JUNKO , TANABE MITSURU , OTA TOSHIMICHI
IPC分类号： H01L29/94 , H01L21/3205 , H01L21/329 , H01L21/822 , H01L23/52 , H01L27/04 , H01L29/861 , H01P3/02
摘要： PROBLEM TO BE SOLVED: To provide a diode which can realize an excellent isolation characteristic. SOLUTION: A diode has a cathode electrode 4 and an anode electrode 5 which are provided separately from each other on a semiconductor substrate 1 and has a shielding metallic structure 7 which is interposed between the cathode electrode 4 and the anode electrode 5.

7. 发明专利

JP2001068557A COMPOSITE SEMICONDUCTOR DEVICE INCLUDING PIN DIODE, FABRICATION THEREOF AND HIGH-FREQUENCY DEVICE COMPRISING THEM 失效
公开(公告)号：JP2001068557A
公开(公告)日：2001-03-16
申请号：JP2000147119
申请日：2000-05-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MIYATSUJI KAZUO , TANABE MITSURU , MAKIOKA TOSHIFUMI , IWANAGA JUNKO , UEDA DAISUKE
IPC分类号： H01L29/73 , H01L21/329 , H01L21/331 , H01L21/822 , H01L21/8222 , H01L21/8232 , H01L27/04 , H01L27/06 , H01L27/095 , H01L29/861 , H01P1/15
摘要： PROBLEM TO BE SOLVED: To obtain a composite semiconductor device including PIN diodes, in which active elements of different types from PIN diode are integrated on a semiconductor substrate. SOLUTION: An n-type semiconductor region 12 and a p-type semiconductor region 13 are provided on a semi-insulating GaAs substrate 11 and an n-type ohmic electrode 14 is provided on the n-type semiconductor region 12, while a p-type ohmic electrode 15 is provided on the p-type semiconductor region 13. The n-type semiconductor region 12 and the p-type semiconductor region 13 are spaced apart by 1 μm and a p-layer/i-layer/n-layer structure of a PIN diode 16 is formed. Furthermore, an FET 10 is provided on the semiinsulating GaAs substrate 11.

8. 发明专利

JP2000216169A FORMATION OF GATE ELECTRODE 失效
公开(公告)号：JP2000216169A
公开(公告)日：2000-08-04
申请号：JP1388299
申请日：1999-01-22
申请人： MATSUSHITA ELECTRIC IND CO LTD , COMM RES LAB MPT
发明人： MATSUNO TOSHINOBU , ANDA YOSHIHARU , YANAGIHARA MANABU , TANABE MITSURU , HIROSE NOBUMITSU , MATSUI TOSHIAKI
IPC分类号： H01L29/812 , G03F7/095 , G03F7/26 , H01L21/28 , H01L21/338
摘要： PROBLEM TO BE SOLVED: To enable reliable formation of a T-shaped gate electrode of sub- quarter micron with use of polymethyl metaacrylate(PMMA)-based resist. SOLUTION: A lower resist film 12 of resist containing methyl metaacrylate(MMA), an upper resist film 13 of resist containing P (MMA-co-MAA), and a protective resist film 14 of resist containing polydimethylglutarimide(PMGI) having a heat resistance higher than that of the lower and upper resist films 12 and 13 are sequentially formed on a substrate 11. Next, the protective resist film 14 is subjected to electron beam(EB) exposure to make a protective opening in an upper-side part of a top formation region of a gate electrode in the protective resist film 14. Subsequently, an upper opening 13a as the top formation region of the gate electrode is made in the upper resist film 13, and a lower opening 12a as a leg-part formation region of the gate electrode is made in the lower resist film 12. Then a conductor film for formation of the gate electrode is deposited on the lower and upper openings 11a and 13a.

9. 发明专利

JPH07273350A MANUFACTURE OF QUANTUM FINE LINE, SEMICONDUCTOR DEVICE USING IT AND ITS MANUFACTURE AND CRYSTAL FORMATION 失效
公开(公告)号：JPH07273350A
公开(公告)日：1995-10-20
申请号：JP5865394
申请日：1994-03-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANABE MITSURU , MATSUNO TOSHINOBU
IPC分类号： H01L21/20 , H01L21/203 , H01L29/06 , H01L29/80
摘要： PURPOSE:To form a plurality of quantum fine lines inside a stripe groove by forming a V-shaped groove in self-alignment by projection-type crystal formation inside a stripe groove. CONSTITUTION:A stripe-like pattern of SiO2, 12 is formed on a GaAs substrate 11. The GaAs substrate is etched using it as a mask and a well-type groove 13 is formed. After the SiO2 12 is removed and a surface is treated, an AlAs layer 14 is formed. Since molecular beam is thin in a side surface of a groove parallel to a molecular beam and a diffusion length of Al is small, Al in a central part of a groove is hard to diffuse as far as a side surface of a groove, AlAs is formed to a projection shape in a bottom part of a groove, an AlAs layer 14 can be formed to a projection shape in a bottom of a groove and a V-shaped groove 15 can be formed in self-alignment. Successively, an A/As layer 16 is formed in the AlAs layer 15 and the groove 13 and a forbidden band width of a GaAs layer 17 is made smaller than that thereof. Then, the groove 15 is buried in the GaAs layer 17. When an AlAs layer 18 is formed in the groove 13 successively, two quantum fine lines 19 can be formed.

10. 发明专利

JP2005198109A Transmitter 有权
标题翻译：发射机
公开(公告)号：JP2005198109A
公开(公告)日：2005-07-21
申请号：JP2004003309
申请日：2004-01-08
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANAKA KOICHIRO , TANABE MITSURU
IPC分类号： H03F1/32 , H03F1/02 , H03F1/06 , H03F3/24 , H04B1/04 , H04J11/00 , H04L27/04 , H04L27/36
CPC分类号： H04L27/367 , H03F1/0205 , H03F1/0211 , H03F1/32 , H03F3/24 , H03F2200/102
摘要： PROBLEM TO BE SOLVED: To provide a transmitter which outputs a modulated wave with a little deterioration of the modulation accuracy or the spectrum, even using a high frequency power amplifier having a great variation of the phase difference between the input and the output when changing its bias voltage. SOLUTION: A complex number table 6 outputs a complex number for correcting the phase shift of a high frequency power amplifier 5 according to the value of an amplitude component of a modulated signal outputted from an envelop detector 2. A complex multiplier 7 outputs a phase-corrected modulated signal to an orthogonal modulator 4. An amplitude conversion table 8 converts the amplitude component outputted from the envelop detector 2 to a value in a specified range, not including zero, a voltage source 3 generates a bias voltage, based on the value, and applies it to a power terminal of the power amplifier 5, the power amplifier 5 operates with the bias voltage to amplify the phase-corrected modulated signal in a high frequency band from the orthogonal modulator 4 and outputs a modulated wave varying with respect to the amplitude and the phase. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使使用输入和输出之间的相位差变化很大的高频功率放大器，也可以提供输出调制精度或频谱几乎劣化的调制波的发送器改变其偏置电压时。解决方案：复数表6根据从包络检测器2输出的调制信号的振幅分量的值，输出用于校正高频功率放大器5的相移的复数。复数乘法器7输出对正交调制器4进行相位校正的调制信号。幅度转换表8将从包络检测器2输出的振幅分量转换为不包括零的指定范围内的值，电压源3产生偏置电压，基于该值并且将其施加到功率放大器5的电源端子，功率放大器5以偏置电压操作，以从正交调制器4放大来自高频带中的相位校正后的调制信号，并输出与相对于幅度和相位。版权所有（C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式