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    • 4. 发明专利
    • ASK MODULATOR AND ASK MODULATION METHOD
    • JP2000049874A
    • 2000-02-18
    • JP21551698
    • 1998-07-30
    • NEC CORP
    • SHIIKUMA KAZUMIYAMAZAKI TOYOE
    • H03H7/06H03C1/36H03H7/38H04L25/03H04L27/04
    • PROBLEM TO BE SOLVED: To provide the ASK modulator and ASK modulation method of a microwave band capable of being miniaturized, lowering power consumption and satisfying the modulation characteristics of a D/U, an occupancy band width and an ON/OFF ratio, etc., by using a passive element. SOLUTION: Base band signals are frequency band limited and outputted by a band limiting circuit 1. The waveform of the output signals becomes the signal waveform of smoothly rising and falling to a time base. Since a driving circuit 2 is operated as a buffer amplifier whose voltage gain is 1 between the band limiting circuit 1 and an ASK modulation circuit 3, an output voltage waveform equal to the output voltage waveform of the band limiting circuit 1 is outputted. The ASK modulation circuit 3 interrupts the carrier waves of the microwave band inputted from the outside by turning a field effect transistor 61 ON and OFF by the voltage of the output signals from the driving circuit 2, performs ASK modulation (binary ASK) and outputs desired ASK modulated waves.
    • 7. 发明专利
    • JPH0344685B2
    • 1991-07-08
    • JP19143184
    • 1984-09-12
    • SIEMENS AG
    • YOOZEFU FUENKURIHIARUTO SHUTETSUPU
    • H03B1/04H03B5/12H03B5/36H03C1/36H03C3/24
    • An integrable bipolar oscillator circuit, includes four transistors of the same conductivity type, four resistors, three constant current sources having base points and outputs, a reference potential terminal connected to the base points of each of the constant current sources, a supply potential terminal, and a frequency-determining feedback member, the output of the first constant current source being connected to the emitter of the first transistor and to the base of the second transistor, the output of the second constant current source being connected to the emitter of the third transistor and to the base of the fourth transistor, the emitters of the second and fourth transistors being connected to the output of the third constant current source through a given connection, the collectors of the first and third transistors being directly connected to the supply potential terminal, the first and second resistors each being connected between a respective one of the collectors of the second and fourth transistors and the supply potential terminal, the fourth resistor being connected between the base of the first transistor and the collector of the fourth transistor, the third resistor being connected between the base of the third transistor and the collector of the second transistor, the frequency-determining feedback member being connected between the base of the third transmitter and the base of the first transistor, and an oscillator voltage being supplied between the emitters of the first and third transistors.
    • 9. 发明专利
    • DISTRIBUTED CONSTANT LINE TYPE AMPLITUDE MODULATOR
    • JPH0265402A
    • 1990-03-06
    • JP21703388
    • 1988-08-31
    • NEC CORP
    • KANEKO TOMOYA
    • H03C1/36
    • PURPOSE:To obtain a general-purpose amplitude modulator at a wide band by using a dual gate FET so as to constitute a distributed constant line amplifier and providing a 1st high frequency wave input line to which a 1st gate of the dual gate FETs is connected sequentially and a 2nd high frequency wave input line to which a 2nd gate of the dual gate FETs is connected sequentially independently. CONSTITUTION:The 1st gate of the dual gate FETs 1a-1c is connected to connecting points 22a-22c between distributed constant lines 2a-2d of the 1st high frequency input line and the 1st high frequency input line is terminated by a resistor 15. Furthermore, the 2nd gate is connected to connecting points 23a-23c between distributed constant lines 3a-3d of the 2nd high frequency input line and the 2nd high frequency input line is terminated by a resistor 16. Thus, the high frequency power inputted from the high frequency input terminal 11 is subject to amplitude modulation by the dual gate FETs 1a-1c with the high frequency power inputted from the high frequency input terminal 12 and outputted from a high frequency output terminal 13. Thus, the amplitude modulator having the gain over a wide band is obtained.