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    • 4. 发明专利
    • High-frequency power amplifying circuit and high-frequency component using the same
    • 使用高频功率放大电路和高频分量
    • JP2007259419A
    • 2007-10-04
    • JP2007017949
    • 2007-01-29
    • Hitachi Metals Ltd日立金属株式会社
    • SUGIYAMA YUTA
    • H03F1/32H03F1/02H03F3/24
    • H03F3/191H03F1/302H03F1/32H03F1/56H03F2200/15H03F2200/18H03F2200/222H03F2200/324H03F2200/451
    • PROBLEM TO BE SOLVED: To provide a linear high-frequency power amplifying circuit of reduced power consumption and high-frequency component using the same. SOLUTION: In an amplifying circuit using a grounded-emitter high-frequency signal amplifying bipolar transistor, the value of impedance of a bias circuit as seen from the base terminal of the bipolar transistor is made optimum in the baseband frequency. More specifically, the resistance value of the base ballast resistor R bias connected to the base terminal of the bipolar transistor is set to a range within ±50% of [V t /I bq -(β×R e +R b )] being the "ideal resistance value", where I bq is the static base current, β is the amplification factor for the transistor, R e and R b are the parasitic resistance of the emitter terminal and the base terminal, respectively, and V t is the voltage defined by (kT/q). COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供降低功耗的线性高频功率放大电路和使用其的高频分量。 解决方案:在使用接地发射极高频信号放大双极晶体管的放大电路中,从双极晶体管的基极端子看偏置电路的阻抗值在基带频率上是最佳的。 更具体地说,连接到双极晶体管的基极端子的基极镇流电阻器R 偏置的电阻值设定在[V SB = 作为“理想电阻值”的I bq - (β×R e + R b )] SB>是静态基极电流,β是晶体管的放大系数,R e 和R b 分别是发射极端子和基极端子的寄生电阻 ,并且V 是由(kT / q)定义的电压。 版权所有(C)2008,JPO&INPIT