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1. 发明专利

JP2006157822A Reproduction apparatus and reproduction method 审中-公开
标题翻译：复制装置和再现方法
公开(公告)号：JP2006157822A
公开(公告)日：2006-06-15
申请号：JP2004348965
申请日：2004-12-01
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORI YUSUKE
IPC分类号： H04N5/93 , G11B20/10 , G11B20/12
摘要： PROBLEM TO BE SOLVED: To provide techniques for synchronously reproducing audio and video when continuously reproducing a plurality of blocks of an encoded stream.
SOLUTION: This reproduction apparatus includes: a means for acquiring audio and video encoded streams and detecting a position near the boundary of blocks as a boundary position of an audio encoded stream and a video encoded stream; a means for calculating a differential between the block boundary and the boundary position; a means for calculating the amount of data to be output between the boundary position and the block boundary based on differential information; a means for detecting a position including the block boundary or including the block boundary and the data amount for audio and video encoded streams and inserting an identifiable specific code; a means for detecting the inserted code and storing, in an input buffer, a stream required for continuously reproducing block boundaries; a means for decoding and outputting the buffered stream; and a means for controlling synchronism of the block boundaries and output data based on the calculated data amount.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供当连续再现编码流的多个块时同步再现音频和视频的技术。解决方案：该再现装置包括：用于获取音频和视频编码流并且检测作为音频编码流和视频编码流的边界位置的块边界附近的位置的装置; 用于计算块边界和边界位置之间的差分的装置; 基于差分信息计算在边界位置和块边界之间输出的数据量的装置; 用于检测包括块边界的位置或包括音频和视频编码流的块边界和数据量并插入可识别的特定码的装置; 用于检测插入的代码并在输入缓冲器中存储连续再现块边界所需的流的装置; 用于解码和输出缓冲流的装置; 以及用于基于所计算的数据量来控制块边界的同步和输出数据的装置。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005243351A Cold-cathode fluorescent lamp and backlight unit 有权
标题翻译：冷阴极荧光灯和背光单元
公开(公告)号：JP2005243351A
公开(公告)日：2005-09-08
申请号：JP2004049987
申请日：2004-02-25
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMASHITA HIROBUMI , TERADA TOSHIHIRO , YAMAZAKI HARUO , MORI YUSUKE
IPC分类号： G02F1/13357 , F21S2/00 , F21V8/00 , F21Y103/00 , H01J61/067
摘要： PROBLEM TO BE SOLVED: To elongate life of a cold-cathode fluorescent lamp in case of continuous lighting, as to one with one of the lead wires connected with a high-tension side wiring from an external power source and the other lead wire connected with a wiring of a lower thermal conductivity than the high-tension side wiring as a grounding side wiring from the external power source.
SOLUTION: The cold-cathode fluorescent lamp 54 is provided with an electrode 56 and an electrode 14. The electrode 56 is jointed with a lead wire 28 connected with a high-tension cable. The electrode 14 is jointed with a lead wire 18 connected with a flat cable 32 of a grounding side. Here, the flat cable 32 has a lower thermal conductivity than the high-tension cable 28. Moreover, a total length of the electrode 56 is made shorter than that of the electrode 14, whereby, an effective electrode surface area of the former virtually contributing to discharge is made smaller than that of the latter 14.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了延长在连续照明的情况下的冷阴极荧光灯的寿命，对于一个引线与来自外部电源的高压侧布线连接的引线和另一个引线电线与来自外部电源的作为接地侧布线的比高压侧布线的热导率低的布线连接。解决方案：冷阴极荧光灯54设置有电极56和电极14.电极56与与高压电缆连接的引线28接合。电极14与与接地侧的扁平电缆32连接的引线18接合。这里，扁平电缆32的热导率比高压电缆28低。此外，电极56的总长度比电极14的长度短，由此，前者的有效电极表面积实际上有贡献排放量小于后者14.版权所有（C）2005年，JPO＆NCIPI

3. 发明专利

JP2005072572A Manufacturing method of group iii nitride crystal substrate and etchant used for the same and, group iii nitride crystal substrate and semiconductor element using the same 有权
标题翻译： III族氮化物晶体基板的制造方法及其使用的蚀刻剂，第III族氮化物晶体基板和使用其的半导体元件
公开(公告)号：JP2005072572A
公开(公告)日：2005-03-17
申请号：JP2004227097
申请日：2004-08-03
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： MINEMOTO TAKASHI , KITAOKA YASUO , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B19/00 , C30B29/38 , C30B33/10 , H01L21/20 , H01L21/208 , H01L21/304 , H01L21/308 , H01L21/338 , H01L29/812 , H01L33/06 , H01L33/22 , H01L33/32 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate with projections and recesses on the surface suppressed. SOLUTION: In a process of performing surface treatment on the surface of a group III nitride crystal 11 having projections and recesses, such as pits, hillocks, facets or the like, the surface is brought into contact with a melt including at least one of an alkali metal and alkaline earth metal for meltback etching, or the melt is used for mechano-chemical polishing. Thereby, the group III nitride crystal substrate 17, with suppressed work distortion and work defects and superior planarity of surface, is manufactured. Moreover, a semiconductor element with high characteristics, for example, is obtained by using this group III nitride crystal substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种III族氮化物晶体基板，其表面上具有突起和凹陷。解决方案：在具有凹凸，例如凹坑，小丘，小面等的III族氮化物晶体11的表面进行表面处理的过程中，使表面与至少包括至少用于回熔蚀刻的碱金属和碱土金属之一，或熔体用于机械化学抛光。因此，制造了具有抑制的工作变形和工作缺陷以及优异的表面平面性的III族氮化物晶体基板17。此外，通过使用该III族氮化物晶体基板，可获得例如具有高特性的半导体元件。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005019005A Manufacturing method of bent type fluorescent lamp and bent type fluorescent lamp, and illumination device 审中-公开
标题翻译：弯曲型荧光灯和弯曲型荧光灯的制造方法及照明装置
公开(公告)号：JP2005019005A
公开(公告)日：2005-01-20
申请号：JP2003177990
申请日：2003-06-23
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORI YUSUKE
IPC分类号： F21S2/00 , F21Y103/025 , H01J9/22
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a bent type fluorescent lamp capable of emitting light without unevenness and with extremely small luminance differences in the axis center direction of a glass bulb, and the bent type fluorescent lamp, and an illumination device.
SOLUTION: The manufacturing method of the bent type fluorescent lamp is provided with a first coating formation process of making a glass tube 3a of a straight tube shape in a perpendicular state and ejecting after suctioning up an absorbing phosphor dispersion solution X from a bottom end opening to a center part and then forming a first coating film 2a drying the phosphor dispersion solution X attached to the glass tube 3a, a second coating formation process of reversing the glass tube 3a, ejecting after suctioning up the phosphor dispersion solution X from the bottom end opening to the center part, and forming a second coating film 2b drying the phosphor dispersion solution X attached to the glass tube 3a, a sealing process to seal a main electrode 4 at both ends of the glass tube 3a with the first and the second coating films 2a, 2b formed, and a glass bulb molding process of carrying out bending treatment to the glass tube 3a with coating films 2a, 2b formed or the glass bulb 3 with the main electrode sealed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决问题的方案为了提供一种弯曲型荧光灯的制造方法，其能够发光而不发生不均匀的光，并且在玻璃灯泡的轴心方向上具有非常小的亮度差，以及弯曲型荧光灯，以及照明装置解决方案：弯曲型荧光灯的制造方法具有第一涂层形成工艺，其制造垂直状态的直管形状的玻璃管3a，并从吸收荧光体分散液X吸出后排出底端开口到中心部分，然后形成第一涂膜2a，干燥附着在玻璃管3a上的荧光体分散液X，第二涂层形成工序使玻璃管3a反转，在将荧光体分散液X从底部开口到中心部分，并形成第二涂膜2b，干燥附着在玻璃管3a上的荧光体分散液X，密封处理，以密封玻璃管3a两端的主电极4的第一和形成的第二涂膜2a，2b，以及形成有涂膜2a，2b的玻璃管3a对玻璃管3a进行弯曲处理的玻璃灯泡模塑工艺主电极密封。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2002068891A RARE EARTH-CALCIUM-OXYBORATE-BASED CRYSTAL EXHIBITING REDUCED DETERIORATION WITH LIGHT AND METHOD OF PRODUCING THE SAME 失效
公开(公告)号：JP2002068891A
公开(公告)日：2002-03-08
申请号：JP2000256672
申请日：2000-08-28
申请人： MATSUSHITA ELECTRIC IND CO LTD , SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI
发明人： FURUYA HIROYUKI , SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI
IPC分类号： G02F1/37 , C30B29/22 , G02F1/355 , H01S3/10
摘要： PROBLEM TO BE SOLVED: To provide a rare earth-calcium-oxyborate-based crystal ReCa4O(BO3)3, where, Re is a rare earth element} capable of reducing the occurrence of optical damages caused by irradiation with light having a wavelength of

6. 发明专利

JP2007294444A Bead mount and cold-cathode discharge tube 审中-公开
标题翻译： BEAD安装和冷阴极放电管
公开(公告)号：JP2007294444A
公开(公告)日：2007-11-08
申请号：JP2007093269
申请日：2007-03-30
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ASHIDA MINA , MORI YUSUKE , TAKASAKI AKISHI
IPC分类号： H01J61/36
摘要： PROBLEM TO BE SOLVED: To provide a bead mount capable of preventing formation of a protruding part in bead glass welding an electrode while inserting it through a through-hole and preventing formation of void in the bead glass with the electrode inserted through the through-hole, and a cold-cathode discharge tube provided with this bead mount.
SOLUTION: In the bead mount having a shaft-like electrode 15 welded to the bead glass 11 while inserted through the through-hole 12 formed in the bead glass 11, a continuous surface is formed on the through-hole 12 or the electrode 16 so that the clearance between the inner surface of the through-hole 12 and the circumferential surface of the electrode 16 at least at an opening end portion 13 from which the electrode 16 is derived of opening end portions 13 of the through-hole 12 is larger than the clearance between the inner surface of the through-hole 12 and the circumferential surface of the electrode 16 at an inner deep part 14 of the through hole 12.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够防止在焊接电极的玻璃珠玻璃中形成突出部分的焊道安装件，同时通过通孔插入电极，并且防止在焊道玻璃中形成空隙，同时电极插入通过通孔，以及设置有该珠架的冷阴极放电管。解决方案：在通过形成在珠玻璃11中的通孔12插入的情况下，在具有在珠玻璃11上焊接的轴状电极15的焊道安装件中，在通孔12或电极16，使得通孔12的内表面与电极16的圆周表面之间的间隙至少在开口端部13处，电极16从该端部13导出通孔12的开口端部13 大于通孔12的内表面和通孔12的内深部14处的电极16的圆周表面之间的间隙。（C）2008年，JPO和INPIT

7. 发明专利

JP2006089376A Method for manufacturing nitride single crystal of group iii element, apparatus used for the same, and nitride single crystal of group iii element obtained by the method 审中-公开
标题翻译：用于制造III族元素的氮化物单晶的方法，用于其的装置和由方法获得的III族元素的氮化物单晶
公开(公告)号：JP2006089376A
公开(公告)日：2006-04-06
申请号：JP2005333054
申请日：2005-11-17
申请人： Matsushita Electric Ind Co Ltd , Takatomo Sasaki , 孝友佐々木 , 松下電器産業株式会社
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , KAI YASUNORI , IMAIDE KAN , KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystal, by which the decomposition of gallium nitride can be suppressed in a sublimation method, and the production efficiency is improved. SOLUTION: In the method for manufacturing the gallium nitride single crystal, comprising a step of growing the gallium nitride single crystal on the surface of a substrate 3 by feeding a raw material (GaN powder) 2 of the gallium nitride (GaN) single crystal in a crucible 1, then heating the crucible so as to sublimate or evaporate the raw material 2, and utilizing that the sublimated or evaporated raw material recrystallizes when the temperature is again lowered on the surface of the substrate 3, the growth of the single crystal is performed under pressure. Preferable pressure is ≥5 atm (5×1.013×10 5 Pa). Preferably, the growth of the single crystal is performed in the atmosphere of a mixed gas of gaseous NH 3 and N 2 . COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造氮化镓单晶的方法，通过该方法可以在升华方法中抑制氮化镓的分解，并提高生产效率。解决方案：在用于制造氮化镓单晶的方法中，包括通过将氮化镓（GaN）的原料（GaN粉末）2供给到衬底3的表面上来生长氮化镓单晶的步骤，在坩埚1中单晶，然后加热坩埚以使原料2升华或蒸发，并且利用升华的或蒸发的原料在基板3的表面上再次降低温度时再结晶，单晶在压力下进行。优选压力≥5atm（5×1.013×10 5 Pa）。优选地，单晶的生长在气态NH 3 SB 3和N SB 2的混合气体的气氛中进行。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2006008416A Group iii nitride crystal usable as group iii nitride substrate, method of manufacturing the same, and semiconductor device using the same 有权
标题翻译：第III组氮化物晶体可用作III类氮化物衬底，其制造方法和使用其的半导体器件
公开(公告)号：JP2006008416A
公开(公告)日：2006-01-12
申请号：JP2004159940
申请日：2004-05-28
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , MORISHITA MASANORI
IPC分类号： C30B29/38 , C30B19/12 , H01L21/208 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/22 , H01L33/32 , H01S5/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a Group III nitride crystal that is of high quality, is manufactured highly efficiently, and is useful and usable as a substrate used in a semiconductor manufacturing process. SOLUTION: The method of manufacturing the Group III nitride crystal comprises forming a first layer 11 made of a semiconductor expressed by the compositional formula: Al s Ga t In 1-s-t N (where, 0≤s≤1, 0≤t≤1, and s+t≤1); then forming a second layer 12 including more defects in a crystal structure, such as a dislocation density, than those of the first layer 11 by bringing the surface of the first layer 11 into contact with a melt containing at least one group III element selected from gallium, aluminum and indium and an alkali metal in an atmosphere including nitrogen; and forming a third layer 13, made of a semiconductor expressed by the compositional formula: Al u Ga v In 1-u-v N (where, 0≤u≤1, 0≤v≤1, and u+v≤1) and having less defects in a crystal structure than those in the second layer 12, through crystal growth in the melt in an atmosphere including nitrogen. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供高品质的III族氮化物晶体的制造方法，高效率地制造，可用作半导体制造工序中使用的基板。解决方案：制造III族氮化物晶体的方法包括形成由以下组成式表示的半导体制成的第一层11：Al SB> 1-st N（其中，0≤s≤1,0≤t≤1，s +t≤1）; 然后通过使第一层11的表面与含有至少一种选自以下的III族元素的熔体接触形成包含比第一层11的晶体结构更多的诸如位错密度的更多缺陷的第二层12 镓，铝和铟以及碱金属; 并且形成由以下组成式表示的半导体制成的第三层13：在 1-uv N中（其中， 0≤u≤1,0≤v≤1且u +v≤1），并且通过在包含氮气的气氛中的熔融物中的晶体生长，具有比第二层12中的晶体结构更少的缺陷。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005225681A Production method of group iii nitride substrate, group iii nitride substrate produced thereby, and semiconductor device and production method thereof 有权
标题翻译： III族氮化物基板，其制造的III族氮化物基板的制造方法及其半导体器件及其制造方法
公开(公告)号：JP2005225681A
公开(公告)日：2005-08-25
申请号：JP2004012415
申请日：2004-01-20
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , ISHIBASHI AKIHIKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B19/04 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a novel method for producing a group III nitride substrate. SOLUTION: In the production method, a mixture containing at least one group III element selected from among gallium, aluminum, and indium, an alkali metal, and a liquid nitrogen compound is melted by heating, thereby reacting the group III element with the nitrogen compound to grow a group III nitride crystal. An example of the liquid nitrogen compound is hydrazine. Preferably, the crystal is grown in a pressurized atmosphere. The mixture may contain an alkaline earth metal, e.g. calcium. The group III element is preferably gallium, and the yielded group III nitride is preferably gallium nitride. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制备III族氮化物衬底的新颖方法。解决方案：在制造方法中，通过加热熔融含有选自镓，铝和铟中的至少一种III族元素，碱金属和液氮化合物的混合物，从而使III族元素与氮化合物生长出III族氮化物晶体。液氮化合物的实例是肼。优选地，晶体在加压气氛中生长。混合物可以含有碱土金属，例如钙。 III族元素优选为镓，产生的III族氮化物优选为氮化镓。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JPH0621189A EVALUATION OF DAMAGE TO MATERIAL 失效
公开(公告)号：JPH0621189A
公开(公告)日：1994-01-28
申请号：JP25682391
申请日：1991-10-04
申请人： MATSUSHITA ELECTRIC IND CO LTD , OSAKA DIAMOND IND
发明人： HIRAKI AKIO , MORI YUSUKE , HIRAO TAKASHI , KITAHATA MAKOTO , DEGUCHI MASAHIRO , NISHIMURA KAZUHITO
IPC分类号： H01L21/66
摘要： PURPOSE:To evaluate the state of a damage in a sample sensitively and non- destructively by a method wherein the intensity of a light emitted from the sample by the application of an electron beam is detected and the state of the damage is evaluated in accordance with the detected intensity. CONSTITUTION:An electron beam 4 is applied to a sample 3 by the use of an electron gun 1. A lens system 2 is a means by which the electron beam 4 is moved to scan the sample 3. If the electron beam 4 is applied to a part of the sample 3, a light is emitted from the part. The light is transmitted to a spectroscope 6 through a light receiving inlet 5 and its intensity is measured by a photo-detector 7. As the peak position of a light emission which is called cathode luminescence and its intensity reflect the state of the sample material, the existence of a damage and the origin of the damage can be found. Therefore, by the measurement of the intensity of the light emitted by the application of the electron beam 4 to the material, the damage of the material can be evaluated.

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