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1. 发明专利

JP2006008416A Group iii nitride crystal usable as group iii nitride substrate, method of manufacturing the same, and semiconductor device using the same 有权
标题翻译：第III组氮化物晶体可用作III类氮化物衬底，其制造方法和使用其的半导体器件
公开(公告)号：JP2006008416A
公开(公告)日：2006-01-12
申请号：JP2004159940
申请日：2004-05-28
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , MORISHITA MASANORI
IPC分类号： C30B29/38 , C30B19/12 , H01L21/208 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/22 , H01L33/32 , H01S5/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a Group III nitride crystal that is of high quality, is manufactured highly efficiently, and is useful and usable as a substrate used in a semiconductor manufacturing process. SOLUTION: The method of manufacturing the Group III nitride crystal comprises forming a first layer 11 made of a semiconductor expressed by the compositional formula: Al s Ga t In 1-s-t N (where, 0≤s≤1, 0≤t≤1, and s+t≤1); then forming a second layer 12 including more defects in a crystal structure, such as a dislocation density, than those of the first layer 11 by bringing the surface of the first layer 11 into contact with a melt containing at least one group III element selected from gallium, aluminum and indium and an alkali metal in an atmosphere including nitrogen; and forming a third layer 13, made of a semiconductor expressed by the compositional formula: Al u Ga v In 1-u-v N (where, 0≤u≤1, 0≤v≤1, and u+v≤1) and having less defects in a crystal structure than those in the second layer 12, through crystal growth in the melt in an atmosphere including nitrogen. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供高品质的III族氮化物晶体的制造方法，高效率地制造，可用作半导体制造工序中使用的基板。解决方案：制造III族氮化物晶体的方法包括形成由以下组成式表示的半导体制成的第一层11：Al SB> 1-st N（其中，0≤s≤1,0≤t≤1，s +t≤1）; 然后通过使第一层11的表面与含有至少一种选自以下的III族元素的熔体接触形成包含比第一层11的晶体结构更多的诸如位错密度的更多缺陷的第二层12 镓，铝和铟以及碱金属; 并且形成由以下组成式表示的半导体制成的第三层13：在 1-uv N中（其中， 0≤u≤1,0≤v≤1且u +v≤1），并且通过在包含氮气的气氛中的熔融物中的晶体生长，具有比第二层12中的晶体结构更少的缺陷。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005306709A METHOD OF MANUFACTURING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE, GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE OBTAINED BY THE METHOD, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权
标题翻译：制造GaN晶体和GaN晶体衬底的方法，通过该方法获得的GaN晶体和GaN晶体衬底以及包括其的半导体器件
公开(公告)号：JP2005306709A
公开(公告)日：2005-11-04
申请号：JP2004248866
申请日：2004-08-27
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , MORISHITA MASANORI
IPC分类号： C30B29/38 , C30B9/10 , H01L21/208 , H01L33/32 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN crystal and a GaN crystal substrate, by which the high quality GaN crystal and GaN crystal substrate can be manufactured under mild conditions of low pressure and low temperature. SOLUTION: In the method of manufacturing the GaN crystal, comprising forming the GaN crystal by reacting gallium and nitrogen in a mixed melt of gallium and sodium under a gas atmosphere containing nitrogen, the reaction of the gallium and the nitrogen is performed under a pressurizing condition that exceeds atmospheric pressure, and the pressure P1 (atm (×1.013×10 5 Pa)) of the pressurizing condition is set so as to satisfy the condition expressed by following conditional expression (I): P≤P1 5 Pa)) denotes the minimum pressure required for generating the GaN crystal at a temperature T°C of the mixed melt. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造GaN晶体和GaN晶体衬底的方法，通过该方法可以在低压和低温的温和条件下制造高质量的GaN晶体和GaN晶体衬底。解决方案：在制造GaN晶体的方法中，包括在含氮和氮气的气氛气氛中，通过镓和氮的混合熔融物中的镓和氮反应形成GaN晶体，镓和氮的反应在超过大气压的加压条件，加压条件的压力P1（atm（×1.013×10 5 Pa））设定为满足由以下条件式（I）表示的条件，：P≤P1<（P + 45）（I）其中，P（atm（×1.013×10 5Pa））表示在温度T°下生成GaN晶体所需的最小压力 C的混合熔体。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2010024089A Growth apparatus and growth method of group iii nitride crystal 有权
标题翻译：第三组氮化物晶体的生长装置和生长方法
公开(公告)号：JP2010024089A
公开(公告)日：2010-02-04
申请号：JP2008186976
申请日：2008-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： UEMATSU KOJI , MORISHITA MASANORI , TANAKA HARUKO , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a growth apparatus and a growth method of a group III nitride crystal capable of stably growing a high quality group III nitride crystal. SOLUTION: The growth apparatus of the group III nitride crystal by a liquid phase method comprises a reaction vessel 120 for housing a solvent 132 containing a group III metal and an alkaline metal, a pressure vessel 110 for housing the reaction vessel 120, a nitrogen-containing gas supplying device 180 for supplying the nitrogen-containing gas to the reaction vessel 120 and the pressure vessel 110, first piping 122 for introducing the nitrogen-containing gas from the nitrogen-containing gas supplying device 180 to the pressure vessel 110 and second piping 124 for introducing the nitrogen-containing gas from a first part 122s in mid-way of the first piping 122 to the reaction vessel 120. At a growing step of the group III nitride crystal, the inner pressure of the reaction vessel and the inner pressure of the pressure vessel are controlled by the nitrogen-containing gas by supplying the nitrogen-containing gas of the amount consumed by growth of the group III nitride crystal by using a pressure controlling vessel 116p and a flow rate controlling vessel 122f. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够稳定生长高质量III族氮化物晶体的III族氮化物晶体的生长装置和生长方法。解决方案：通过液相法的III族氮化物晶体的生长装置包括用于容纳含有III族金属和碱金属的溶剂132的反应容器120，用于容纳反应容器120的压力容器110，用于将含氮气体供给到反应容器120和压力容器110的含氮气体供给装置180，用于将含氮气体从含氮气体供给装置180导入压力容器110的第一配管122 以及用于将含氮气体从第一管道122的中途的第一部分122s引入反应容器120的第二管道124.在III族氮化物晶体的生长步骤中，反应容器的内部压力和通过使用含有III族氮化物晶体生长消耗的量的含氮气体，通过含氮气体来控制压力容器的内部压力 g压力控制容器116p和流量控制容器122f。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010100449A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010100449A
公开(公告)日：2010-05-06
申请号：JP2008271136
申请日：2008-10-21
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： MORISHITA MASANORI , UEMATSU KOJI , TANAKA HARUKO , YOSHIDA HIROAKI , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, by which a group III nitride crystal having low dislocation density is grown with satisfactory reproducibility even if the crystal growth speed is decreased.
SOLUTION: The method for growing a group III nitride crystal 10 is based on a liquid phase method, and includes a process for preparing a ground substrate 1 and a process for growing the group III nitride crystal 10 on the main surface 1m of the ground substrate by bringing a solution 6, obtained by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, into contact with the main surface 1m. In the process for growing the group III nitride crystal 10, the crystal growth speed is gradually increased from 0 μm/hr at a speed change rate of ≤1 μm/hr
2 .
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长III族氮化物晶体的方法，即使晶体生长速度降低，通过该方法可以以令人满意的再现性生长具有低位错密度的III族氮化物晶体。解决方案：用于生长III族氮化物晶体10的方法基于液相法，并且包括制备接地衬底1的方法和用于在III族氮化物晶体10的主表面1m上生长III族氮化物晶体10的方法通过将含有氮的气体5溶解在含有III族金属和碱金属的溶剂3中而获得的溶液6与基底表面1m接触而形成基底。在生长III族氮化物晶体10的过程中，晶体生长速度以≤1μm/ hr 2 的速度变化率从0μm/ hr逐渐增加。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2004146618A Cover device for electronic apparatus 有权
标题翻译：电子装置封装装置
公开(公告)号：JP2004146618A
公开(公告)日：2004-05-20
申请号：JP2002310371
申请日：2002-10-25
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORISHITA MASANORI
IPC分类号： G03B17/02 , H01M2/10 , H04N5/225 , H04N101/00 , H05K5/03
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To provide a cover device which ensures opening and closing by one-hand operation even when no battery is set in a battery chamber.
SOLUTION: An engaging hook 24 is provided at a lock lever 12 which is incorporated into a door body 11 for opening and closing an opening portion of an apparatus body 1. A protrusion 28 is provided to the apparatus body 1. While the engaging hook 24 engages with the protrusion 28, the lock lever 12 is prevented from returning to its original position even when released from a force for shifting the lock lever 12 in the direction of disengaging from the apparatus body 1 against the bias force of a pressure spring 7, so that the door body 11 is reliably opened.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供即使在电池室中没有设置电池的情况下也可以通过单手操作确保打开和关闭的盖装置。解决方案：接合钩24设置在锁定杆12处，锁定杆12结合到门体11中，用于打开和关闭装置主体1的开口部分。突起28设置在装置主体1上。虽然接合钩24与突起28接合时，即使当从锁定杆12沿与设备主体1脱离接触的方向抵抗压力的偏压力的力释放时，锁定杆12也被防止返回到其初始位置弹簧7，使得门体11可靠地打开。版权所有（C）2004，JPO

6. 发明专利

JP2008026888A Camera with interchangeable lenses having electrical circuitry 审中-公开
标题翻译：具有电路连接的相机的相机
公开(公告)号：JP2008026888A
公开(公告)日：2008-02-07
申请号：JP2007162441
申请日：2007-06-20
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORISHITA MASANORI , NAKADA MASAHIRO , MORI TETSUYA , HAYASHI JUNKO
IPC分类号： G03B17/02 , H04N5/225
摘要： PROBLEM TO BE SOLVED: To provide an interchangeable lens type camera which is so safe as to prevent spread of fire when dust strays into the interior of the camera to cause heating and/or electrical leakage of an electric circuitry and invite ignition.
SOLUTION: The camera includes a case having a mount section for mounting a detachable lens; the electric circuitry provided within the case; and a member covering at least a portion of the electric circuitry to prevent the electric circuitry from being exposed to the exterior when the lens is detached from the mount section.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可互换的透镜式照相机，其安全，以防止灰尘流入照相机内部时引起火焰扩散，从而引起电路的加热和/或漏电并引起点火。解决方案：相机包括具有用于安装可拆卸透镜的安装部分的壳体; 设置在壳体内的电路; 以及覆盖电路的至少一部分的构件，以防止当透镜从安装部分拆下时电路暴露于外部。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007028371A Camera 有权
标题翻译：相机
公开(公告)号：JP2007028371A
公开(公告)日：2007-02-01
申请号：JP2005209748
申请日：2005-07-20
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： SAIKI ATSUSHI , MORISHITA MASANORI
IPC分类号： H04N5/225 , G03B17/02 , G03B17/04 , G03B17/08 , H04N101/00
摘要： PROBLEM TO BE SOLVED: To provide a camera provided with a display means turnably fitted to a camera body wherein infiltration of water from a passing path of a wiring member for interconnecting a display means to the camera body into the camera body is prevented.
SOLUTION: The camera includes: the camera body; the display means turnably fitted to the camera body via a hinge; a flexible wiring member for passing through the vicinity of the hinge to electrically connect the camera body and the display means; and a turning lid provided between the camera body and the display means, one end of which is turnably provided to the camera body, the other end of which is energized toward the display means, and arranged to cover the flexible wiring member in the vicinity of the hinge.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有可转动地安装在相机机体上的显示装置的相机，其中防止了将水从用于将显示装置连接到照相机主体的布线部件的通过路径渗入相机主体中。
解决方案：相机包括：相机机身; 所述显示装置经由铰链可转动地安装到所述照相机主体; 柔性布线构件，用于穿过所述铰链附近以电连接所述照相机主体和所述显示装置; 以及设置在所述照相机主体和所述显示装置之间的转动盖，其一端可转动地设置在所述照相机主体上，所述照相机主体的另一端向所述显示装置通电，并且被布置成在所述照明装置的附近铰链。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2002051244A MONITOR LOCK DEVICE 失效
公开(公告)号：JP2002051244A
公开(公告)日：2002-02-15
申请号：JP2000237022
申请日：2000-08-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TSUCHIYA HIKARI , KAWASHIMA TOSHIYUKI , MORISHITA MASANORI , KONISHI TORU
IPC分类号： H04N5/225 , G09F9/00
摘要： PROBLEM TO BE SOLVED: To overcome the problem such that a picture is hardly viewed and a product quality becomes inferior as well by a floating main body 104 of liquid crystal monitor from a main body 102 of camera when projecting video on a liquid crystal monitor screen 103 and performing recording and reproducing while watching that video since the main body 104 of the liquid crystal monitor cannot be fixed on the main body 102 of the camera. SOLUTION: In the camera with liquid crystal, even when the main body 104 of liquid crystal monitor is housed and a picture is visible by inverting the main body 204 of liquid crystal monitor, the main body of liquid crystal monitor can be surely fixed on the main body of the video camera, the liquid crystal monitor screen is easily viewed and the size of the entire device can be reduced.

9. 发明专利

JP2000069337A VIDEO CAMERA 失效
公开(公告)号：JP2000069337A
公开(公告)日：2000-03-03
申请号：JP23531598
申请日：1998-08-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAWASHIMA TOSHIYUKI , MORISHITA MASANORI
IPC分类号： H04N5/225 , G11B33/06
摘要： PROBLEM TO BE SOLVED: To reduce the size and weight of a video camera, while maintaining a dustproof effect of a terminal by providing a battery fitting part with a DC input terminal capable of inputting DC power and a signal output terminal for outputting a video signal to the outside. SOLUTION: By arranging an S terminal 1 and a digital still image output terminal 9 on a battery fitting part 2, only a microphone terminal 8 needs to be provided on the side face of a video camera main body 10, so that the gap size L4 between a cassette fitting part 13 and a lens part 11 can be shortened, and thereby the entire size L3 of the body 10 can also be shortened. Then, when a battery is fitted to the battery fitting part 2, both the terminals 1, 9 can be concealed by the battery to obtain a dustproof effect. Since the size of a terminal cover 17 need only to cover the microphone terminal 8 provided on the side face of the body 10, the size can be reduced further.

10. 发明专利

JPH11163554A PUSH BUTTON DEVICE 失效
公开(公告)号：JPH11163554A
公开(公告)日：1999-06-18
申请号：JP32995697
申请日：1997-12-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAWASHIMA TOSHIYUKI , MORISHITA MASANORI
IPC分类号： H05K7/12 , G11B33/02
摘要： PROBLEM TO BE SOLVED: To enable to upsize a button operating surface, to share a frame with other models and to simplify the make-up of components, by using a part of a button hole of a housing as a surface to be opposed to a button and to prevent an improper operation by forming a hinge on the surface. SOLUTION: A push button 4 is rotated around a hinge 5 as fulcrum and is allowed to push a switch 2. When the switch 2 is further pushed, the underside of the push button is made in contact with a surface 11. With this structure, since the operating physical force is not directly applied to a substrate, the button can be upsized, a common frame can be used and the makeup of components can be simplified. Also, since the underside of the button is made in contact with a hinge 13 formed on the surface 11 before the switch 2 is pushed, the operating physical force is increased and an improper operation can be prevented.

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