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1. 发明专利

JP2005072572A Manufacturing method of group iii nitride crystal substrate and etchant used for the same and, group iii nitride crystal substrate and semiconductor element using the same 有权
标题翻译： III族氮化物晶体基板的制造方法及其使用的蚀刻剂，第III族氮化物晶体基板和使用其的半导体元件
公开(公告)号：JP2005072572A
公开(公告)日：2005-03-17
申请号：JP2004227097
申请日：2004-08-03
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： MINEMOTO TAKASHI , KITAOKA YASUO , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B19/00 , C30B29/38 , C30B33/10 , H01L21/20 , H01L21/208 , H01L21/304 , H01L21/308 , H01L21/338 , H01L29/812 , H01L33/06 , H01L33/22 , H01L33/32 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate with projections and recesses on the surface suppressed. SOLUTION: In a process of performing surface treatment on the surface of a group III nitride crystal 11 having projections and recesses, such as pits, hillocks, facets or the like, the surface is brought into contact with a melt including at least one of an alkali metal and alkaline earth metal for meltback etching, or the melt is used for mechano-chemical polishing. Thereby, the group III nitride crystal substrate 17, with suppressed work distortion and work defects and superior planarity of surface, is manufactured. Moreover, a semiconductor element with high characteristics, for example, is obtained by using this group III nitride crystal substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种III族氮化物晶体基板，其表面上具有突起和凹陷。解决方案：在具有凹凸，例如凹坑，小丘，小面等的III族氮化物晶体11的表面进行表面处理的过程中，使表面与至少包括至少用于回熔蚀刻的碱金属和碱土金属之一，或熔体用于机械化学抛光。因此，制造了具有抑制的工作变形和工作缺陷以及优异的表面平面性的III族氮化物晶体基板17。此外，通过使用该III族氮化物晶体基板，可获得例如具有高特性的半导体元件。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2006008416A Group iii nitride crystal usable as group iii nitride substrate, method of manufacturing the same, and semiconductor device using the same 有权
标题翻译：第III组氮化物晶体可用作III类氮化物衬底，其制造方法和使用其的半导体器件
公开(公告)号：JP2006008416A
公开(公告)日：2006-01-12
申请号：JP2004159940
申请日：2004-05-28
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , MORISHITA MASANORI
IPC分类号： C30B29/38 , C30B19/12 , H01L21/208 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/22 , H01L33/32 , H01S5/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a Group III nitride crystal that is of high quality, is manufactured highly efficiently, and is useful and usable as a substrate used in a semiconductor manufacturing process. SOLUTION: The method of manufacturing the Group III nitride crystal comprises forming a first layer 11 made of a semiconductor expressed by the compositional formula: Al s Ga t In 1-s-t N (where, 0≤s≤1, 0≤t≤1, and s+t≤1); then forming a second layer 12 including more defects in a crystal structure, such as a dislocation density, than those of the first layer 11 by bringing the surface of the first layer 11 into contact with a melt containing at least one group III element selected from gallium, aluminum and indium and an alkali metal in an atmosphere including nitrogen; and forming a third layer 13, made of a semiconductor expressed by the compositional formula: Al u Ga v In 1-u-v N (where, 0≤u≤1, 0≤v≤1, and u+v≤1) and having less defects in a crystal structure than those in the second layer 12, through crystal growth in the melt in an atmosphere including nitrogen. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供高品质的III族氮化物晶体的制造方法，高效率地制造，可用作半导体制造工序中使用的基板。解决方案：制造III族氮化物晶体的方法包括形成由以下组成式表示的半导体制成的第一层11：Al SB> 1-st N（其中，0≤s≤1,0≤t≤1，s +t≤1）; 然后通过使第一层11的表面与含有至少一种选自以下的III族元素的熔体接触形成包含比第一层11的晶体结构更多的诸如位错密度的更多缺陷的第二层12 镓，铝和铟以及碱金属; 并且形成由以下组成式表示的半导体制成的第三层13：在 1-uv N中（其中， 0≤u≤1,0≤v≤1且u +v≤1），并且通过在包含氮气的气氛中的熔融物中的晶体生长，具有比第二层12中的晶体结构更少的缺陷。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005225681A Production method of group iii nitride substrate, group iii nitride substrate produced thereby, and semiconductor device and production method thereof 有权
标题翻译： III族氮化物基板，其制造的III族氮化物基板的制造方法及其半导体器件及其制造方法
公开(公告)号：JP2005225681A
公开(公告)日：2005-08-25
申请号：JP2004012415
申请日：2004-01-20
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , ISHIBASHI AKIHIKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B19/04 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a novel method for producing a group III nitride substrate. SOLUTION: In the production method, a mixture containing at least one group III element selected from among gallium, aluminum, and indium, an alkali metal, and a liquid nitrogen compound is melted by heating, thereby reacting the group III element with the nitrogen compound to grow a group III nitride crystal. An example of the liquid nitrogen compound is hydrazine. Preferably, the crystal is grown in a pressurized atmosphere. The mixture may contain an alkaline earth metal, e.g. calcium. The group III element is preferably gallium, and the yielded group III nitride is preferably gallium nitride. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制备III族氮化物衬底的新颖方法。解决方案：在制造方法中，通过加热熔融含有选自镓，铝和铟中的至少一种III族元素，碱金属和液氮化合物的混合物，从而使III族元素与氮化合物生长出III族氮化物晶体。液氮化合物的实例是肼。优选地，晶体在加压气氛中生长。混合物可以含有碱土金属，例如钙。 III族元素优选为镓，产生的III族氮化物优选为氮化镓。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005039248A Method for manufacturing group iii nitride, method for manufacturing semiconductor substrate, group iii nitride crystal, semiconductor substrate, and electron device 有权
标题翻译：制造III族氮化物的方法，制造半导体衬底的方法，III族氮化物晶体，半导体衬底和电子器件
公开(公告)号：JP2005039248A
公开(公告)日：2005-02-10
申请号：JP2004187983
申请日：2004-06-25
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： H01L21/208 , H01L21/338 , H01L29/812 , H01L33/32 , H01L33/34 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing group III nitride crystals of high quality useful for the substrates used for a semiconductor manufacturing process. SOLUTION: A semiconductor layer 12 with a crystalline nucleus growth region 12a is formed on the surface of a semiconductor represented by a compositional formula Al u Ga v In 1-u-v N (wherein, 0≤u≤1, 0≤v≤1, u+v≤1). The crystalline nucleus growth region 12a of the semiconductor layer 12 is made in contact with a melt containing at least one of group III elements selected from a group consists of gallium, aluminum and indium and either of alkali metal or alkaline earth metal in an atmosphere containing nitrogen to grow a group III nitride crystal 13 on the layer 12. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造用于半导体制造工艺的基板的具有高质量的III族氮化物晶体的方法。解决方案：在由组成式Al表示的半导体的表面上形成具有晶核生长区域12a的半导体层12在其中，0≤u≤1,0≤v≤1，u +v≤1）。半导体层12的晶核生长区域12a与含有选自镓，铝和铟中的III族元素中的至少一种的元素的熔体接触，并且在含有碱金属或碱土金属的气氛中氮以在层12上生长III族氮化物晶体13。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005012171A Method for manufacturing group iii nitride substrate and semiconductor device 有权
标题翻译：制造III类氮化物衬底和半导体器件的方法
公开(公告)号：JP2005012171A
公开(公告)日：2005-01-13
申请号：JP2004075103
申请日：2004-03-16
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , ISHIBASHI AKIHIKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B11/06 , C30B29/38 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride substrate having a low dislocation density and a semiconductor device manufactured by the method. SOLUTION: In the method for manufacturing a group III nitride substrate, a group III element and nitrogen are reacted in an alkali metal solution in an atmosphere including nitrogen to generate and grow a crystal, a plurality of parts of a group III nitride semiconductor layer prepared in advance are selected as at least one of seed crystals for the generation and growth of a group III nitride crystal, and the surface of the seed crystal is made to come into contact with the solution. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造具有低位错密度的III族氮化物衬底和通过该方法制造的半导体器件的方法。解决方案：在制备III族氮化物衬底的方法中，III族元素和氮在包括氮的气氛中的碱金属溶液中反应以产生和生长晶体，多个III族氮化物的部分预先制备的半导体层被选择为用于产生和生长III族氮化物晶体的晶种中的至少一种，使晶种的表面与溶液接触。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005306709A METHOD OF MANUFACTURING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE, GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE OBTAINED BY THE METHOD, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权
标题翻译：制造GaN晶体和GaN晶体衬底的方法，通过该方法获得的GaN晶体和GaN晶体衬底以及包括其的半导体器件
公开(公告)号：JP2005306709A
公开(公告)日：2005-11-04
申请号：JP2004248866
申请日：2004-08-27
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , MORISHITA MASANORI
IPC分类号： C30B29/38 , C30B9/10 , H01L21/208 , H01L33/32 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN crystal and a GaN crystal substrate, by which the high quality GaN crystal and GaN crystal substrate can be manufactured under mild conditions of low pressure and low temperature. SOLUTION: In the method of manufacturing the GaN crystal, comprising forming the GaN crystal by reacting gallium and nitrogen in a mixed melt of gallium and sodium under a gas atmosphere containing nitrogen, the reaction of the gallium and the nitrogen is performed under a pressurizing condition that exceeds atmospheric pressure, and the pressure P1 (atm (×1.013×10 5 Pa)) of the pressurizing condition is set so as to satisfy the condition expressed by following conditional expression (I): P≤P1 5 Pa)) denotes the minimum pressure required for generating the GaN crystal at a temperature T°C of the mixed melt. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造GaN晶体和GaN晶体衬底的方法，通过该方法可以在低压和低温的温和条件下制造高质量的GaN晶体和GaN晶体衬底。解决方案：在制造GaN晶体的方法中，包括在含氮和氮气的气氛气氛中，通过镓和氮的混合熔融物中的镓和氮反应形成GaN晶体，镓和氮的反应在超过大气压的加压条件，加压条件的压力P1（atm（×1.013×10 5 Pa））设定为满足由以下条件式（I）表示的条件，：P≤P1<（P + 45）（I）其中，P（atm（×1.013×10 5Pa））表示在温度T°下生成GaN晶体所需的最小压力 C的混合熔体。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005263622A Method of manufacturing compound single crystal and apparatus for manufacturing it 审中-公开
标题翻译：制造化合物单晶的方法及其制造方法
公开(公告)号：JP2005263622A
公开(公告)日：2005-09-29
申请号：JP2005041711
申请日：2005-02-18
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , TAKAHASHI YASUHITO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B9/10 , C30B29/38 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound single crystal, especially a group III nitride single crystal such as potassium nitride or aluminum nitride, which method is capable of improving a growth rate and growing a single crystal with a high crystal uniformity and a large size in a short time; and an apparatus for manufacturing it. SOLUTION: The compound single crystal is grown while a raw material liquid is being stirred so that the liquid flows from a gas-liquid interface contacting with a raw material gas toward the inside of the liquid. By this stirring, the raw material gas is easily dissolved in the raw material liquid and the supersaturation is attained in a short time to improve the growth rate of the compound single crystal. Since the flow from the gas-liquid interface where the raw material gas concentration is high toward the inside of the raw material liquid where the raw material gas concentration is low, is formed and the dissolution of the raw material gas is homogenized by this mixing, ununiform nucleus formation at the gas-liquid interface is suppressed and the quality of the obtained compound single crystal is improved. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造化合物单晶，特别是氮化三氮合氮化物等III族氮化物单晶的方法，该方法能够提高生长速度并且生长单晶，在短时间内具有高晶体均匀性和大尺寸; 及其制造装置。解决方案：在搅拌原料液体的同时使化合物单晶生长，使得液体从与原料气体接触的气液界面朝向液体内部流动。通过该搅拌，原料气容易溶解在原料液中，在短时间内达到过饱和，提高了化合物单晶的生长速度。由于形成原料气体浓度低的原料气体浓度较高的原料气体浓度的气液界面的流动，并且原料气体的溶解通过该混合均匀化，抑制气 - 液界面处的不均匀核形成，提高所得复合单晶的质量。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004300024A Method for manufacturing nitride crystal of group iii element, nitride crystal of group iii element obtained by the same, and semiconductor device obtained by using the same 审中-公开
公开(公告)号：JP2004300024A
公开(公告)日：2004-10-28
申请号：JP2004081133
申请日：2004-03-19
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , ISHIBASHI AKIHIKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B11/06 , H01L33/06 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride crystal of a group III element by which the carrier concentration can be easily controlled, the nitride crystal of the group III element obtained by the method, and a semiconductor device obtained by using the nitride crystal. SOLUTION: The method for manufacturing the nitride crystal of the group III element includes a process for growing the crystal by reacting the group III element, nitrogen and a dopant in a melt containing an alkali metal in an atmosphere of a gas containing the nitrogen-containing gas and the dopant. As the group III element, at least one selected from, for example, Ga, Al and In can be used. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2006089376A Method for manufacturing nitride single crystal of group iii element, apparatus used for the same, and nitride single crystal of group iii element obtained by the method 审中-公开
标题翻译：用于制造III族元素的氮化物单晶的方法，用于其的装置和由方法获得的III族元素的氮化物单晶
公开(公告)号：JP2006089376A
公开(公告)日：2006-04-06
申请号：JP2005333054
申请日：2005-11-17
申请人： Matsushita Electric Ind Co Ltd , Takatomo Sasaki , 孝友佐々木 , 松下電器産業株式会社
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , KAI YASUNORI , IMAIDE KAN , KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystal, by which the decomposition of gallium nitride can be suppressed in a sublimation method, and the production efficiency is improved. SOLUTION: In the method for manufacturing the gallium nitride single crystal, comprising a step of growing the gallium nitride single crystal on the surface of a substrate 3 by feeding a raw material (GaN powder) 2 of the gallium nitride (GaN) single crystal in a crucible 1, then heating the crucible so as to sublimate or evaporate the raw material 2, and utilizing that the sublimated or evaporated raw material recrystallizes when the temperature is again lowered on the surface of the substrate 3, the growth of the single crystal is performed under pressure. Preferable pressure is ≥5 atm (5×1.013×10 5 Pa). Preferably, the growth of the single crystal is performed in the atmosphere of a mixed gas of gaseous NH 3 and N 2 . COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造氮化镓单晶的方法，通过该方法可以在升华方法中抑制氮化镓的分解，并提高生产效率。解决方案：在用于制造氮化镓单晶的方法中，包括通过将氮化镓（GaN）的原料（GaN粉末）2供给到衬底3的表面上来生长氮化镓单晶的步骤，在坩埚1中单晶，然后加热坩埚以使原料2升华或蒸发，并且利用升华的或蒸发的原料在基板3的表面上再次降低温度时再结晶，单晶在压力下进行。优选压力≥5atm（5×1.013×10 5 Pa）。优选地，单晶的生长在气态NH 3 SB 3和N SB 2的混合气体的气氛中进行。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005251961A Group iii nitride single crystal wafer and method for manufacturing semiconductor device using same 审中-公开
标题翻译：第III组氮化物单晶及其制造方法使用其制造半导体器件
公开(公告)号：JP2005251961A
公开(公告)日：2005-09-15
申请号：JP2004060072
申请日：2004-03-04
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO
IPC分类号： B24B9/00 , H01L21/304 , H01L21/368
摘要： PROBLEM TO BE SOLVED: To provide an group III nitride single crystal wafer for reducing a stress to be imposed on a wafer at the when grinding and thinning the backside of the wafer, and for suppressing the generation of the damage of the wafer.
SOLUTION: The first group III nitride single crystal wafer is configured as a group III nitride single crystal wafer of a hexagonal system, and when a face on which a semiconductor element is formed is configured as a first main surface, and the face opposite to the first main surface is configured as a second main surface, the terminal of at least the second main surface is beveled, and the beveling quantity of the terminal of the second main surface is set so as to be larger than the beveling quantity of the terminal of the first main surface.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种III族氮化物单晶晶片，用于在研磨和减薄晶片的背面时减少施加在晶片上的应力，并且用于抑制晶片损坏的产生。解决方案：第一III族氮化物单晶晶片被配置为六边形系统的III族氮化物单晶晶片，并且当其上形成有半导体元件的面被配置为第一主表面时，第一主表面相对的第一主表面被配置为第二主表面，至少第二主表面的端子被倾斜，并且第二主表面的端子的斜切量被设定为大于第二主表面的倾斜量第一主表面的终端。版权所有（C）2005，JPO＆NCIPI

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