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1. 发明专利

JPH0621189A EVALUATION OF DAMAGE TO MATERIAL 失效
公开(公告)号：JPH0621189A
公开(公告)日：1994-01-28
申请号：JP25682391
申请日：1991-10-04
申请人： MATSUSHITA ELECTRIC IND CO LTD , OSAKA DIAMOND IND
发明人： HIRAKI AKIO , MORI YUSUKE , HIRAO TAKASHI , KITAHATA MAKOTO , DEGUCHI MASAHIRO , NISHIMURA KAZUHITO
IPC分类号： H01L21/66
摘要： PURPOSE:To evaluate the state of a damage in a sample sensitively and non- destructively by a method wherein the intensity of a light emitted from the sample by the application of an electron beam is detected and the state of the damage is evaluated in accordance with the detected intensity. CONSTITUTION:An electron beam 4 is applied to a sample 3 by the use of an electron gun 1. A lens system 2 is a means by which the electron beam 4 is moved to scan the sample 3. If the electron beam 4 is applied to a part of the sample 3, a light is emitted from the part. The light is transmitted to a spectroscope 6 through a light receiving inlet 5 and its intensity is measured by a photo-detector 7. As the peak position of a light emission which is called cathode luminescence and its intensity reflect the state of the sample material, the existence of a damage and the origin of the damage can be found. Therefore, by the measurement of the intensity of the light emitted by the application of the electron beam 4 to the material, the damage of the material can be evaluated.

2. 发明专利

JPH0620982A INTRODUCTION OF IMPURITY ATOM 失效
公开(公告)号：JPH0620982A
公开(公告)日：1994-01-28
申请号：JP25682191
申请日：1991-10-04
申请人： MATSUSHITA ELECTRIC IND CO LTD , OSAKA DIAMOND IND
发明人： HIRAKI AKIO , MORI YUSUKE , HIRAO TAKASHI , KITAHATA MAKOTO , DEGUCHI MASAHIRO , NISHIMURA KAZUHITO
IPC分类号： C01B21/064 , C01B31/06 , C23C8/36 , C30B29/04 , C30B29/36 , C30B29/38 , C30B31/22 , H01L21/265 , H01L51/00 , H01L51/05 , H01L51/40
摘要： PURPOSE:To provide a method of introducing impurity atoms into diamond or BN or SiC or organic semiconductor. CONSTITUTION:Impurity particles are accelerated, energized and are applied to diamond or BN or SiC or organic semiconductor material. Diamond or BN or SiC or the organic semiconductor material is exposed to the atmosphere that contains hydrogen radicals or hydrogen ions after irradiated with the accelerated particles.

3. 发明专利

JPH0621027A METHOD FOR REMOVING DAMAGE OF MATERIAL 失效
公开(公告)号：JPH0621027A
公开(公告)日：1994-01-28
申请号：JP25682291
申请日：1991-10-04
申请人： MATSUSHITA ELECTRIC IND CO LTD , OSAKA DIAMOND IND
发明人： HIRAKI AKIO , MORI YUSUKE , HIRAO TAKASHI , KITAHATA MAKOTO , DEGUCHI MASAHIRO , NISHIMURA KAZUHITO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/324
摘要： PURPOSE:To provide a method for removing damage of an electronic material and to recover crystallinity in a region thereof. CONSTITUTION:A method aims for exposing an electronic material having damage to atmosphere containing hydrogen radical or hydrogen ion generated by making electromagnetic wave from a microwave oscillator 105 act on mixture gas containing gas having at least hydrogen atom as a constituent atom which is introduced into a vacuum bath 102. It is especially desirable that the method is used for a material of diamond, NB or SiC.

4. 发明专利

JPH06279187A SUPER HARD FILM-COATED MATERIAL AND ITS PRODUCTION 失效
公开(公告)号：JPH06279187A
公开(公告)日：1994-10-04
申请号：JP9523993
申请日：1993-03-29
申请人： OSAKA DIAMOND IND
发明人： HARA AKIO , NISHIMURA KAZUHITO , TOMIMORI HIROSHI , MATSUMOTO YASUSHI
IPC分类号： B23B27/14 , B23P15/28 , C30B29/04
摘要： PURPOSE:To obtain a material coated with a super-hard film in which the super-hard film is firmly fitted to a cermet base body by forming a diamond super hard film on the surface of a cermet preliminarily subjected to specified surface treatment. CONSTITUTION:This coated material consists of a base body and a super-hard film comprising diamond and/or diamond carbon formed on the surface of the base body. The base body is a cermet and its surface where a super-hard film is to be formed is preliminarily treated with >=1 kind of group III elements or compds. of these. The surface of the cermet base body is dipped in a fused liquid or solution of >=1 kind of group III elements or compds. of these. Then the super hard film comprising diamond and/or diamond carbon is formed on the treated surface by chemical vapor phase synthesizing method. By this method, fitting strength of the super-hard film is significantly improved so that a film over 20mum thickness which is conventionally impossible can be formed and polished. By polishing the film, the cuttability of the material can be further improved.

5. 发明专利

JPH0217632A MANUFACTURE OF DIAMOND CRYSTAL CHIP FOR LIGHT-EMISSION ELEMENTS 失效
公开(公告)号：JPH0217632A
公开(公告)日：1990-01-22
申请号：JP16797188
申请日：1988-07-06
申请人： OSAKA DIAMOND IND
发明人： HIRAKI AKIO , KAWARADA HIROSHI , YOSHINAGA HIROTOSHI , NISHIMURA KAZUHITO
IPC分类号： H01L21/205 , H01L33/34
摘要： PURPOSE:To obtain a diamond crystal chip having best characteristics as a blue light emission element by a method wherein predetermined mixed gas is introduced in a reaction container in which a predetermined inner pressure is kept and a plasma is generated by an electric field to generate a diamond on a substrate. CONSTITUTION:A microwave plasma CVD device (shown in the figure) is used, and the manufacturing conditions should be as described in table 1. A substrate 1 in which an Si single crystal wafer is finally ground with #5000 diamond powder is held in a reaction container 2. Feedstock gas containing hydrogen gas containing diborane listed in table 1, hydrogen carbonate, oxygen gas, or inert gas is introduced into the container 2 from a feedstock gas input port 4, and a plasma 5 is generated by a plasma generation source (magnetron 6, waveguide 7) at pressure 0.1Torr. While the pressure inside the tube is kept by increasing the pressure inside the tube, a diamond is grown on the substrate 1 by taking the time shown in table 1. This makes it possible to obtain a diamond crystal chip having a stable blue emission and emission intensity.

6. 发明专利

JPH01222802A DIAMOND TOOL 失效
公开(公告)号：JPH01222802A
公开(公告)日：1989-09-06
申请号：JP4790888
申请日：1988-03-01
申请人： OSAKA DIAMOND IND
发明人： UEGAMI KENJIROU , NISHIMURA KAZUHITO
IPC分类号： B23B27/20 , B24B1/00
摘要： PURPOSE:To prevent the fusing deposition of a chip and obtain a tool having an excellent abrasion resistance and an excellent cutting property by manufacturing the captioned tool with the rake face and the chip flowing direction thereof formed with a crystal face having a small friction coefficient and in the crystallizing direction respectively using a natural octahedral single crystal as the material. CONSTITUTION:A rake face is formed with the crystal face (110) of a natural octahedral diamond single crystal and a cutting edge in which a chip flow-out direction is the crystallizing direction is formed on this rake face. That is, if the rake face and the chip flow-out direction is formed in the crystallizing direction of a lower friction coefficient, i.e., in the direction of the face (110), the friction between the chip and the rake face of a tool is reduced, the stagnation of chips can be hard to occur, and a good cutting edge can be maintained increasing a tool life. In a threading tool for example, the rake face 1 is formed on the face (110) and a cutting edge 3 is formed on the rake face 1 in such a way that the chip flow-out direction 2 is in the direction.

7. 发明专利

JPH0197503A DESIGNING METHOD FOR DIAMOND TOOL 失效
公开(公告)号：JPH0197503A
公开(公告)日：1989-04-17
申请号：JP25523887
申请日：1987-10-09
申请人： OSAKA DIAMOND IND
发明人： IGAWA NAOYA , SHIMADA SHOICHI , YOSHINAGA HIROTOSHI , NISHIMURA KAZUHITO
IPC分类号： B23B27/20 , C30B29/04
摘要： PURPOSE:To improve the cutting performance of the tool in the caption by obtaining light and dark pattern images appearing within a diamond monocrystal due to the difference in luminous efficiency with the aid of a scanning electron microscope so as to render a position in an area except for the suddenly changed portion of the pattern image or its border area, a cutting edge surface forming area. CONSTITUTION:In order to carry out the submicron analysis of a dodecahedral diamond monocrystal, a cathodeluminescence detector is built in a scanning electron microscope, and an elliptic mirror is used to collect the light so as to observe light and dark patterns which are concentrically formed along the growing direction of the crystal. If there is an outstanding difference between the light and the darkness of the light and dark patters in a cutting edge, the edge is frequently broken in the border between the light and the dark areas. Therefore, when the cutting edge is formed, it is formed in an approximately uniform luminous area or a non-luminous area except for the border area where an outstanding difference between the light and the darkness is found. Thus, the cutting performance of the cutting edge can be improved.

8. 发明专利

JPS62139865A METALLIZING METHOD FOR DIAMOND 失效
公开(公告)号：JPS62139865A
公开(公告)日：1987-06-23
申请号：JP27958585
申请日：1985-12-12
申请人： NISSIN ELECTRIC CO LTD , OSAKA DIAMOND IND
发明人： KAMIJO EIJI , ANDO YASUNORI , ICHIHARA YOSHIICHI , NISHIMURA KAZUHITO
IPC分类号： C04B41/80 , C04B41/88 , C23C14/18 , C23C14/48
摘要： PURPOSE:To securely and tightly adhere a metallic layer to a diamond surface by subjecting the diamond surface to vapor deposition of the metal and implanting the ions of gas or metal thereto at the same instant to form an ion mixing layer at the boundary. CONSTITUTION:The ions of the gas or metal are irradiated upward by a bucket type ion source 4 in a method for forming a metallized layer to the diamond surface. The metal for vapor deposition is released upward by an electron beam heating type vapor source 3 and arrives at a rotary type sample holder 2. The diamond is disposed in the holder 2. The vapor deposition or ionization vapor deposition of the metal which can be easily brazed to the diamond surface is executed and at the same time, the ion mixing layer which is the mixed layer composed of the diamond and the metal is formed at the boundary between both. The metallic base metal, etc., are securely joined by brazing to the vapor deposited metallic layer by the intervention of such ion mixing layer.

9. 发明专利

JPH0760509A TIP FOR CUTTING TOOL COATED WITH ULTRA-HARD FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0760509A
公开(公告)日：1995-03-07
申请号：JP23892493
申请日：1993-08-30
申请人： OSAKA DIAMOND IND
发明人： MATSUMOTO YASUSHI , KAWAI SHIGEYOSHI , NISHIMURA KAZUHITO , TOMIMORI HIROSHI , NAKATANI SEIJI
IPC分类号： B23B27/14 , B23P15/28
摘要： PURPOSE:To manufacture a high-quality tip easily at a low cost for a tip for a cutting tool coated with ultra-hard film such as diamond film by polishing only part of a rake face directly composing a cutting edge in the ultra-hard film. CONSTITUTION:A corner part 5 directly composing a cutting edge except for a center part 3 in a rake face of a base material is set high, and only ultra-hard film on the corner part 5 is finished to be smoother than surface roughness when the film is produced for forming a tip for a cutting tool. For this tip, a surface of the base material is processed with more than one sorts of elements of groups Ia, III, IVb, Vb preliminarily, it is then coated with the ultra-hard film in a vapor phase synthesis method, and only the ultra-hard film on the high corner part is polished.

10. 发明专利

JPH05100355A HOLE-BURNING MEMORY 失效
公开(公告)号：JPH05100355A
公开(公告)日：1993-04-23
申请号：JP26038991
申请日：1991-10-08
申请人： HIRAKI AKIO , YOKOTA YOSHIHIRO , KURITA ATSUSHI , OSAKA DIAMOND IND
发明人： HIRAKI AKIO , YOKOTA YOSHIHIRO , KURITA ATSUSHI , NISHIMURA KAZUHITO
IPC分类号： G03C1/72 , G11B7/00 , G11B7/24 , G11B7/244 , G11B7/30
摘要： PURPOSE:To provide a memory capable of accurately reading holes regardless of the presence or absence of a substrate by using a thin-film diamond crystal. CONSTITUTION:A thin-film diamond crystal 5 is vapor-synthesized on a substrate 4, and a light emitting center is formed on the crystal 5, irradiated with a laser beam from a wavelength-variable laser 1 and hole-burned. The vicinity of the formed hole is scanned by a laser beam from the laser 1, the excitation spectrum is observed by the light emitted from the excited crystal 5, and the hole is read.

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