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1. 发明专利

JPH0620982A INTRODUCTION OF IMPURITY ATOM 失效
公开(公告)号：JPH0620982A
公开(公告)日：1994-01-28
申请号：JP25682191
申请日：1991-10-04
申请人： MATSUSHITA ELECTRIC IND CO LTD , OSAKA DIAMOND IND
发明人： HIRAKI AKIO , MORI YUSUKE , HIRAO TAKASHI , KITAHATA MAKOTO , DEGUCHI MASAHIRO , NISHIMURA KAZUHITO
IPC分类号： C01B21/064 , C01B31/06 , C23C8/36 , C30B29/04 , C30B29/36 , C30B29/38 , C30B31/22 , H01L21/265 , H01L51/00 , H01L51/05 , H01L51/40
摘要： PURPOSE:To provide a method of introducing impurity atoms into diamond or BN or SiC or organic semiconductor. CONSTITUTION:Impurity particles are accelerated, energized and are applied to diamond or BN or SiC or organic semiconductor material. Diamond or BN or SiC or the organic semiconductor material is exposed to the atmosphere that contains hydrogen radicals or hydrogen ions after irradiated with the accelerated particles.

2. 发明专利

JPH0621027A METHOD FOR REMOVING DAMAGE OF MATERIAL 失效
公开(公告)号：JPH0621027A
公开(公告)日：1994-01-28
申请号：JP25682291
申请日：1991-10-04
申请人： MATSUSHITA ELECTRIC IND CO LTD , OSAKA DIAMOND IND
发明人： HIRAKI AKIO , MORI YUSUKE , HIRAO TAKASHI , KITAHATA MAKOTO , DEGUCHI MASAHIRO , NISHIMURA KAZUHITO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/324
摘要： PURPOSE:To provide a method for removing damage of an electronic material and to recover crystallinity in a region thereof. CONSTITUTION:A method aims for exposing an electronic material having damage to atmosphere containing hydrogen radical or hydrogen ion generated by making electromagnetic wave from a microwave oscillator 105 act on mixture gas containing gas having at least hydrogen atom as a constituent atom which is introduced into a vacuum bath 102. It is especially desirable that the method is used for a material of diamond, NB or SiC.

3. 发明专利

JPH0621189A EVALUATION OF DAMAGE TO MATERIAL 失效
公开(公告)号：JPH0621189A
公开(公告)日：1994-01-28
申请号：JP25682391
申请日：1991-10-04
申请人： MATSUSHITA ELECTRIC IND CO LTD , OSAKA DIAMOND IND
发明人： HIRAKI AKIO , MORI YUSUKE , HIRAO TAKASHI , KITAHATA MAKOTO , DEGUCHI MASAHIRO , NISHIMURA KAZUHITO
IPC分类号： H01L21/66
摘要： PURPOSE:To evaluate the state of a damage in a sample sensitively and non- destructively by a method wherein the intensity of a light emitted from the sample by the application of an electron beam is detected and the state of the damage is evaluated in accordance with the detected intensity. CONSTITUTION:An electron beam 4 is applied to a sample 3 by the use of an electron gun 1. A lens system 2 is a means by which the electron beam 4 is moved to scan the sample 3. If the electron beam 4 is applied to a part of the sample 3, a light is emitted from the part. The light is transmitted to a spectroscope 6 through a light receiving inlet 5 and its intensity is measured by a photo-detector 7. As the peak position of a light emission which is called cathode luminescence and its intensity reflect the state of the sample material, the existence of a damage and the origin of the damage can be found. Therefore, by the measurement of the intensity of the light emitted by the application of the electron beam 4 to the material, the damage of the material can be evaluated.

4. 发明专利

JP2002088465A METHOD FOR DEPOSITNG HARD CARBON FILM ON METAL BASE MATERIAL 失效
公开(公告)号：JP2002088465A
公开(公告)日：2002-03-27
申请号：JP2000275444
申请日：2000-09-11
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YAMADA OSAMU , HIRAO TAKASHI
IPC分类号： F16C33/24 , C23C14/06 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To improve adhesion between a metal base material 30 and a hard carbon film (DLC) 33 and also to improve the effect of the hard carbon film as a protective film by hardening the base material. SOLUTION: By adding gaseous nitrogen to inert gas at bombardment, nitriding treatment is carried out simultaneously with bombardment to harden the metal base material 30. Further, as to an intermediate layer 31, a nitride- formable metal is used and the metal base material 30 and the intermediate layer 31 are bound together via nitrogen to improve adhesion. A gradient structure 32 can be formed between the intermediate layer 31 and the hard carbon film (DLC) 33.

5. 发明专利

JP2001062310A PHOTOCATALYST MATERIAL 失效
公开(公告)号：JP2001062310A
公开(公告)日：2001-03-13
申请号：JP24323999
申请日：1999-08-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ITO NOBUHISA , ANPO SHOICHI , TAKEUCHI MASAHITO , HIRAO TAKASHI , TORII HIDEO , TAKAYAMA RYOICHI
IPC分类号： B01D53/86 , B01J21/06 , B01J35/02 , C01G23/04
摘要： PROBLEM TO BE SOLVED: To provide a membrane type photocatalyst material developing photocatalytic activity even with respect to the irradiation with visible light. SOLUTION: A photocatalyst material is constituted of a continuous film with a thickness of 20-3,000 nm comprising titanium oxide and consisting of a surface part comprising a TiO2 layer with a stoichiometric compsn. and a lower part comprising a TiOx (1.90

6. 发明专利

JPH08213333A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08213333A
公开(公告)日：1996-08-20
申请号：JP32861395
申请日：1995-12-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HIRAO TAKASHI , SETSUNE KENTARO , YOSHIDA TETSUHISA
IPC分类号： H01L21/22 , H01L21/265 , H01L21/336 , H01L29/786
摘要： PURPOSE: To compensate a defect, which is induced in an insulating substrate at the time of n impurity implantation in the substrate, and to make a heat treatment of the substrate possible at a low temperature by a method wherein hydrogen ions are accelerate from a plasma space simultaneously with group III ions or group V ions and the group III ions or the group V ions and the hydrogen ions are selectively introduced in a silicon thin film using a mask formed on the silicon thin film. CONSTITUTION: A vacuum container 1 consisting of a quartz tube, electrodes 2 for high-frequency power which is applied to the outside, and an electromagnet 3 are provided and an external magnetic field is formed. pH3 gas, which is diluted with H2 and is introduced in the container 1, is excited in an electromagnetic field and generated phosphorus ions 4 and hydrogen ions 5 are accelerated. A sample 10 put on a base 6 is selecting doped using a mask 7. The sample 10 is an amorphous silicon semiconductor layer 9 formed on an insulation substrate 8. Thereby, impurities can be introduced on the substrate, on which a large area substrate is easily formed and which is formed with the amorphous silicon semiconductor layer, without using a deposition method and the number of processes can be lessened.

7. 发明专利

JPH08169708A FORMATION OF SILICON FILM AND SILICON FILM FORMING DEVICE 失效
公开(公告)号：JPH08169708A
公开(公告)日：1996-07-02
申请号：JP27033895
申请日：1995-10-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHIBUYA MUNEHIRO , KITAGAWA MASATOSHI , HIRAO TAKASHI , YOSHIDA TETSUHISA , MUKAI YUJI
IPC分类号： C01B33/02 , C23C16/24 , C23C18/12 , H01L21/205 , H01L31/04
摘要： PURPOSE: To deposit a silicon film at a high rate with high raw material utilization efficiency at a low cost by spraying and decomposing a liq. compd. contg. silicon and chlorine on a heated substrate in the form of a fine particle. CONSTITUTION: A compd. 55 contg. silicon and chlorine and which is liq. under barometric pressure and normal temps. is introduced into an atomizer 18 through a liq. flow controller 52, and a carrier gas and/or a reducing gas are introduced into the atomizer 18 through a flow controller 50. The mixture is introduced into the space 14 of a reaction chamber 12 from a nozzle and sprayed over the whole surface of a substrate 26 held by a holder 16 as the fine liq. particle. The space 14 in the chamber 12 is preferably kept at several ten Torr to one atm. The substrate 26 is heated to 450 to 800 deg.C by a heater 28 provided to the holder 16, hence the fine-particle compd. close to the substrate surface is decomposed, and a silicon film 60 is deposited and formed on the substrate.

8. 发明专利

JPH08162686A PIEZOELECTRIC SENSOR ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH08162686A
公开(公告)日：1996-06-21
申请号：JP29847294
申请日：1994-12-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HAYASHI SHIGENORI , KOMAKI KAZUKI , JINNO ISAKU , KAMATA TAKESHI , TORII HIDEO , TAKAYAMA RYOICHI , HIRAO TAKASHI
IPC分类号： G01P15/09 , H01L41/08 , H01L41/22
摘要： PURPOSE: To provide a monolithic piezoelectric sensor element structure having a small size and high sensitivity and a method for manufacturing the same to realize it. CONSTITUTION: A unimorph type piezoelectric sensor element of a cantilever structure is formed by the steps of forming a lower electrode 2 and a piezoelectric thin film 3 on a substrate, patterning it in a rectangular shape, then scooping out the substrate of the lower part so that the other end is floated in space except one end for supporting the rectangular part to form a recess 4 to be an air gap, further, providing its top with an upper electrode 5 and a support layer 6.

9. 发明专利

JPH0870143A THIN-FILM SENSOR ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH0870143A
公开(公告)日：1996-03-12
申请号：JP606795
申请日：1995-01-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TORII HIDEO , KAMATA TAKESHI , HAYASHI SHIGENORI , HIRAO TAKASHI , TAKAYAMA RYOICHI , HATTORI MASUZO
IPC分类号： G01P15/125 , B81B3/00 , B81C1/00 , G01J1/02 , G01J5/02 , G01J5/34 , H01L37/02
摘要： PURPOSE: To provide compact, light, accurate, and inexpensive acceleration sensor element and pyroelectric infrared ray sensor element by sealing a multilayer film structure body with an electrode film, an electrode film with (100) face orientation, and a piezoelectric dielectric oxide film existing between the electrode films on a sensor retention substrate with a penetrated space at a center. CONSTITUTION: A conductive NiO film 12 in rock salt type crystal structure where the vertical direction is subjected to crystal orientation in direction for a substrate surface by the plasma MOCVD method is formed on the surface of a flat-plate-type KBr substrate 1, PZT film is subjected to epitaxial growth on the surface by the sputteing method to form PZT film 4, Ni-Cr electrode film 15 is grown on the surface, then a multilayer film is inverted and is bonded to a sensor substrate 7 with a penetrated space at a center with an adhesive 20, a connection electrode 19 is connected, and then the entire part is washed with water, thus eliminating the KBr substrate 1.

10. 发明专利

JPH088205A MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH088205A
公开(公告)日：1996-01-12
申请号：JP13698294
申请日：1994-06-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHIDA TETSUHISA , KITAGAWA MASATOSHI , HIRAO TAKASHI
IPC分类号： H01L21/28 , H01L21/203 , H01L21/205 , H01L21/225
摘要： PURPOSE:To provide a manufacturing method of a semiconductor element, which can manufacture the semiconductor element whose resistance at the interface of metal/semiconductor is small and characteristics are excellent. CONSTITUTION:A thin film 2 of metal such as Ti, Mo and W, wherein impurities to become the dopant of P or B or the like are mixed at the concentration of 10mol% or less beforehand, is formed on a substrate 1 or quartz, glass and the like by a vacuum evaporation method, a sputtering method or the like. Then, a polycrystalline silicon thin film 3 is formed as a semiconductor film on the metal thin film 2 by a CVD method or the like. Heat treatment is performed in inert gas such as He and Ar and nitrogen atmosphere at 800 deg.C. Dopant elements are diffused into the polycrystalline silicon thin film 3, and a P-type or N-type doping layer 4 is formed. At the same time, a metal silicate layer 5 is also formed.

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