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1. 发明专利

JPH1083988A THIN FILM FORMING METHOD, DEVICE, AND SEMICONDUCTOR DEVICE OF SEMICONDUCTOR-INSULATOR JUNCTION STRUCTURE 失效
公开(公告)号：JPH1083988A
公开(公告)日：1998-03-31
申请号：JP25767596
申请日：1996-09-06
申请人： MATSUMURA HIDEKI , NEC CORP , ANELVA CORP
发明人： MATSUMURA HIDEKI , IZUMI AKIRA , MASUDA ATSUSHI , NASHIMOTO YASUNOBU , MIYOSHI YOSUKE , NOMURA HIDEJI , SAKURAI KAZUO , AOSHIMA SHOICHI
IPC分类号： H01L21/205 , C23C16/02 , C23C16/44 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a thin film forming method and a device where interface defects can be decreased and a film can be formed at a lower temperature, and to realize a semiconductor device of semiconductor-insulator junction structure which is low in interfacial level density. SOLUTION: Surface treatment gas such as hydrogen gas is introduced through a surface treatment gas inlet system into a processing chamber 1, so as to pass near the surface of a thermal catalyst 5 provided adjacent to a substrata 20 disposed in the processing chamber 1. Surface treatment gas generates active seeds by a contact decomposing reaction caused by the thermal catalyst 5, and the active seeds reach to the surface of the substrate 20 to carry out a surface treatment such as removal of a natural oxide film. Thereafter, film forming gas is introduced into the processing chamber 1 through a film forming gas inlet system 3 so as to be fed to the substrate 20 passing near the surface of the thermal catalyst 5, whereby a prescribed insulating film is formed on the surface of the semiconductor substrate 20 through a catalyst CVD method. An interface between the formed insulating film and a semiconductor is of interfacial level density 1012eV-1cm-2 or below, so that a semiconductor device of high performance can be realized.

2. 发明专利

JP2000277501A CHEMICAL VAPOR DEPOSITION SYSTEM 失效
公开(公告)号：JP2000277501A
公开(公告)日：2000-10-06
申请号：JP8262499
申请日：1999-03-25
申请人： JAPAN SCIENCE & TECH CORP , MATSUMURA HIDEKI , ANELVA CORP
发明人： NOMURA HIDEJI , IKEDA KOJI , MORIZAKI HITOSHI , WATANABE SHUGO , ISHIBASHI KEIJI , KARASAWA MINORU
IPC分类号： H01L21/31 , C23C16/46 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To prevent impurities from being mixed in a thin film, which is formed in a chemical vapor deposition system wherein heating elements are formed by a CVD method. SOLUTION: Raw gas fed within a treating container by a gas feeding line is decomposed or activated on the surfaces of heating elements maintained at a high temperature of 1500 to 1900 deg.C or thereabouts by an energy feeding mechanism and a thin film is formed on the surface of a substrate. The heating elements are wires made of a high-melting point metal, such as tungsten, and after the heating elements are subjected to a high-temperature treatment, which is maintained for five minutes or more in a vacuum of 1×10-6 to 1 Pa or thereabouts at a temperature of 2000 to 3000 deg.C or thereabouts higher than the temperature at the formation of the thin film, they are mounted within the container 1. A heavy metal mixed in the thin film at the molding of the heating elements 3 or the like is previously released by the high temperature treatment and a mixing of impurities into the thin film is lower than an impurity concentration of 1×1017 atoms/cc.

3. 发明专利

JP2009010412A Chemical vapor deposition method 有权
标题翻译：化学蒸气沉积法
公开(公告)号：JP2009010412A
公开(公告)日：2009-01-15
申请号：JP2008216024
申请日：2008-08-25
申请人： Canon Anelva Corp , Japan Science & Technology Agency , Matsumura Hideki , キヤノンアネルバ株式会社 , 松村英樹 , 独立行政法人科学技術振興機構
发明人： NOMURA HIDEJI , IKEDA KOJI , MORIZAKI HITOSHI , WATANABE SHUGO , ISHIBASHI KEIJI , KARASAWA MINORU
IPC分类号： H01L21/318 , C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a chemical vapor deposition method capable of preventing incorporation of impurities into a thin film to be formed, and using a heating element. SOLUTION: A material gas supplied into a treatment vessel 1 by a gas supply system 2 is decomposed or activated on a surface of the heating element 3 kept at high temperature around 1,500-1,900°C by an energy supply mechanism 30, and a thin film is formed on a surface of a substrate 9. The heating element 3 is a wire of a high-melting-point metal such as tungsten, and mounted in the treatment vessel 1 after a high-temperature treatment keeping it at a temperature about 2,000-3,000°C above the temperature in the thin-film formation in a vacuum condition about 1×10 -6 -1 Pa for 5 min or more. Heavy metals incorporated in formation or the like of the heating element 3 are previously discharged by the high-temperature treatment, and the incorporation into the thin film falls below 1×10 17 atoms/cc. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止杂质掺入到要形成的薄膜中并使用加热元件的化学气相沉积方法。解决方案：通过供气系统2供给到处理容器1中的原料气体通过能量供给机构30在保持在高温约1500-1,900℃的加热元件3的表面上被分解或活化，并且在基板9的表面上形成薄膜。加热元件3是诸如钨的高熔点金属的线，并且在高温处理之后将其安装在处理容器1中，保持在温度在大约1×10 -6 SPI-1Pa的真空条件下，在薄膜形成温度以上约2000-3000℃持续5分钟以上。通过高温处理预先排出掺入加热元件3的形成等中的重金属，并且并入薄膜中的比例低于1×10 17个原子/ cc。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009283954A Catalyst chemical vapor deposition device and method of producing thin film 有权
标题翻译：催化剂蒸气沉积装置和薄膜生产方法
公开(公告)号：JP2009283954A
公开(公告)日：2009-12-03
申请号：JP2009163000
申请日：2009-07-09
申请人： Canon Anelva Corp , Japan Science & Technology Agency , Matsumura Hideki , キヤノンアネルバ株式会社 , 松村英樹 , 独立行政法人科学技術振興機構
发明人： NOMURA HIDEJI , IKEDA KOJI , MORIZAKI HITOSHI , WATANABE SHUGO , ISHIBASHI KEIJI , KARASAWA MINORU
IPC分类号： H01L21/205 , C23C16/44 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To prevent impurities from mixing into a thin film to be prepared in catalyst chemical vapor deposition using a heating element.
SOLUTION: A heating element composed of a wire of a high melting point metal such as tungsten is electrically conducted under a reducing gas atmosphere and is subjected to a reducing gas process while generating Joule heat. Thereafter, a material gas is supplied by a gas supply system into a treatment container 1, the material gas is decomposed or activated on the surface of the heating element 3 which is kept at a high temperature of approximately 1,500 to 1,900°C, and a thin film is formed on the surface of a substrate. Heavy metals mixed such as when forming the heating element are emitted in advance by a high-temperature treatment, so that mixing into the thin film is less than 1×10
17 atoms/cc.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止杂质混入到使用加热元件的催化剂化学气相沉积中制备的薄膜中。解决方案：将由钨等高熔点金属线构成的加热元件在还原气体气氛下导电，同时产生焦耳热，进行还原气体处理。此后，原料气体由气体供给系统供给到处理容器1内，原料气体在保持在1500〜1900℃的高温的加热元件3的表面上分解或活化，在基板的表面上形成薄膜。混合的重金属，例如在形成加热元件时，通过高温处理预先发射，使得混入薄膜中的原子数小于1×10 17个原子/ cc。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009041105A Sputtering system and sputtering film deposition method 有权
标题翻译：溅射系统和溅射膜沉积方法
公开(公告)号：JP2009041105A
公开(公告)日：2009-02-26
申请号：JP2008217793
申请日：2008-08-27
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NOMURA HIDEJI , MIYOSHI AYUMI , TSUNEKAWA KOJI
IPC分类号： C23C14/34 , G11B5/39 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To prevent cross contamination among targets.
SOLUTION: In the sputtering system, a shutter mechanism operates so as to simultaneously satisfy the following (a) to (c): (a) an overlapped part between the first hole 61a of a first shutter plate 61 and the third hole 62a of a second shutter plate 62 is located below a first target 38; (b) the second hole 61b of the first shutter plate 61 is located below the second target 35, and the second shutter plate 62 covers the second target 35; and (c) the first shutter plate 61 and the second shutter plate 62 cover third targets (36, 37).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：防止目标之间的交叉污染。解决方案：在溅射系统中，快门机构操作以同时满足以下（a）至（c）：（a）第一活门板61的第一孔61a和第三孔之间的重叠部分 62a位于第一靶38的下方; （b）第一挡板61的第二孔61b位于第二靶35的下方，第二挡板62覆盖第二靶35。和（c）第一挡板61和第二挡板62覆盖第三靶（36,37）。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009147351A Method and apparatus for manufacturing magnetoresistance device 有权
标题翻译：用于制造磁阻器件的方法和装置
公开(公告)号：JP2009147351A
公开(公告)日：2009-07-02
申请号：JP2009005598
申请日：2009-01-14
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NOMURA HIDEJI , MIYOSHI AYUMI , TSUNEKAWA KOJI
IPC分类号： H01L43/12 , G11B5/39 , H01F10/16 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetoresistance device using the manufacturing apparatus of a magnetic multilayered film having a normal configuration suitable in particular for manufacturing a magnetic multilayered film by a semiconductor device maker, capable of enhancing a film capability and improving productivity in the production of a magnetic head or an MRAM comprising an TMR device.
SOLUTION: The manufacturing method of the magnetoresistance device has a step of forming a multilayered metal film having an NiFe film and a PtMn film in a chamber 17B on a substrate, a step of forming a metallic oxide film in the chamber 18 different from the chamber 17B on the substrate after forming the multilayered metal film with the NiFe film and the PtMn film, and a step of forming the multilayered metal film with a CoFe film and the NiFe film in the chamber 17C different from the chambers 17B, 18 on the substrate after forming the metallic oxide film.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用具有适合于通过半导体器件制造者制造磁性多层膜的具有正常结构的磁性多层膜的制造装置制造磁阻器件的方法，能够增强膜能力和提高生产磁头或包括TMR装置的MRAM的生产率。解决方案：磁阻装置的制造方法具有在基板上的室17B中形成具有NiFe膜和PtMn膜的多层金属膜的步骤，在室18中形成金属氧化物膜的步骤不同由NiFe膜和PtMn膜形成多层金属膜之后，从基板上的室17B中除去室17B，18B之外的CoFe膜形成多层金属膜，并且在室17C中形成NiFe膜在形成金属氧化物膜之后的基板上。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008294474A Chemical vapor deposition apparatus, and manufacturing method of fet and semiconductor device 审中-公开
标题翻译：化学气相沉积装置及其半导体器件的制造方法
公开(公告)号：JP2008294474A
公开(公告)日：2008-12-04
申请号：JP2008208496
申请日：2008-08-13
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NOMURA HIDEJI
IPC分类号： H01L21/31 , C23C16/42 , C23C16/44 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To reduce heat radiation from a heating element 4 to a substrate 9 in a chemical vapor deposition apparatus.
SOLUTION: The heating element 4 is turned to a wire-like member which is disposed between a first ring 42 on the side of a gas distributor 32 for supplying a raw material gas and a second ring 42 on the side of a substrate holder 5 and generates Joule heat by being energized. By making the heating element 4 not parallel with the substrate 9, the amount of radiation heat reaching the substrate 9 from the heating element 4 is reduced.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在化学气相沉积设备中减少从加热元件4到基板9的热辐射。解决方案：加热元件4转向线状构件，该线状构件设置在用于供应原料气体的气体分布器32侧的第一环42和衬底侧的第二环42之间夹持器5，并通过通电产生焦耳热。通过使加热元件4不与基板9平行，从加热元件4到达基板9的辐射热量减少。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008283218A Chemical vapor deposition device, and method of manufacturing semiconductor device 审中-公开
标题翻译：化学蒸气沉积装置及制造半导体器件的方法
公开(公告)号：JP2008283218A
公开(公告)日：2008-11-20
申请号：JP2008208511
申请日：2008-08-13
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NOMURA HIDEJI , IKEDA KOJI , MORIZAKI HITOSHI , WATANABE SHUGO
IPC分类号： H01L21/31 , C23C16/44 , C23C16/52 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a chemical vapor deposition device comprising a shutter 7 for shielding and opening a space between a heater 4 and a substrate holder 5, wherein control of switching the shutter 7 is optimized to cancel a poor condition of a quality of a film at an initial time of the beginning of forming the film.
SOLUTION: The device includes steps of: starting application of current to the heater 4 in a state in which the shutter 7 is on a shielding position; generating heat up to a predetermined temperature on the heater 4; controlling an exhaust velocity with start of supplying a raw material gas and thereby adjusting the pressure in a processing container 1 to a predetermined pressure; and providing a control part 8 for moving the shutter 7 to an opening position.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种化学气相沉积装置，其包括用于屏蔽和打开加热器4和基板保持件5之间的空间的快门7，其中优化控制快门7的切换以消除不良状况在形成胶片的开始的初始阶段的胶片的质量。解决方案：该装置包括以下步骤：在快门7处于屏蔽位置的状态下开始向加热器4施加电流; 在加热器4上产生高达预定温度的热量; 控制排气速度，开始供应原料气体，从而将处理容器1中的压力调节至预定压力; 并提供用于将快门7移动到打开位置的控制部分8。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2002167661A MAGNETIC MULTILAYERED FILM DEPOSITION SYSTEM 失效
公开(公告)号：JP2002167661A
公开(公告)日：2002-06-11
申请号：JP2000365696
申请日：2000-11-30
申请人： ANELVA CORP
发明人： NOMURA HIDEJI , MIYOSHI AYUMI , TSUNEKAWA KOJI
IPC分类号： C23C14/06 , C23C14/34 , C23C14/56 , G11B5/39 , H01F41/18 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetic multilayered film deposition system which has a structure commonly used for the manufacture of TMR device and MRAM and is fitted to the manufacture of a magnetic multilayered film by semiconductor-device manufactures and by which properties of the film can be increased and productivity can be improved. SOLUTION: In the magnetic multilayered film deposition system 10, each of a plurality of magnetic films is successively deposited in laminated state onto a substrate to deposit the magnetic multilayered film. The magnetic multilayered films are divided into a plurality of groups (A, B, C), and each of the plurality of groups is composed of a plurality of magnetic films which are continuously deposited into laminated state. The plurality of magnetic films contained in each of the plurality of groups are successively deposited onto a substrate in one and the same film deposition chamber (17A, 17B, 17C), respectively. Film deposition is performed indifferent film deposition chambers for the respective groups.

10. 发明专利

JP2001107251A METHOD AND SYSTEM FOR CHEMICAL VAPOR DEPOSITION 失效
公开(公告)号：JP2001107251A
公开(公告)日：2001-04-17
申请号：JP28155599
申请日：1999-10-01
申请人： ANELVA CORP
发明人： NOMURA HIDEJI , IKEDA KOJI
IPC分类号： H01L21/31 , C23C16/46
摘要： PROBLEM TO BE SOLVED: To solve the problem of deterioration in film quality in the initial stage at the beginning of film deposition by means of chemical vapor deposition using heating elements. SOLUTION: Material gas, supplied via a gas supply system 3 into a treatment vessel 1 having an exhaust system 11, is decomposed and/or activated at the surface of a heating element 4 heating to a prescribed high temperature by an energy supply mechanism 6 and then reaches the surface of a substrate 9 held by a substrate holder 5 to deposit prescribed thin film. A shutter 7 for shielding the substrate 9 from the heating element 4 and a heating body 8 for previously providing the substrate 9 with heat necessary to raise the temperature of the substrate 9 to a temperature at which the substrate 9 is supposed to arrive by the heat radiation from the heating element 4 are provided in the position between the heating element 4 and the substrate holder 5. When the shutter 7 is opened and film deposition is initiated, heating by the heating body 8 is switched to heating by the heating element 4. As the result, the temperature of the substrate 9 is unchanged before and after the starting of film deposition. The heating body 8 moves integrally with the shutter 7 moving between the opening position and the closing position by a driving mechanism 70.

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