专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH1083988A THIN FILM FORMING METHOD, DEVICE, AND SEMICONDUCTOR DEVICE OF SEMICONDUCTOR-INSULATOR JUNCTION STRUCTURE 失效
公开(公告)号：JPH1083988A
公开(公告)日：1998-03-31
申请号：JP25767596
申请日：1996-09-06
申请人： MATSUMURA HIDEKI , NEC CORP , ANELVA CORP
发明人： MATSUMURA HIDEKI , IZUMI AKIRA , MASUDA ATSUSHI , NASHIMOTO YASUNOBU , MIYOSHI YOSUKE , NOMURA HIDEJI , SAKURAI KAZUO , AOSHIMA SHOICHI
IPC分类号： H01L21/205 , C23C16/02 , C23C16/44 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a thin film forming method and a device where interface defects can be decreased and a film can be formed at a lower temperature, and to realize a semiconductor device of semiconductor-insulator junction structure which is low in interfacial level density. SOLUTION: Surface treatment gas such as hydrogen gas is introduced through a surface treatment gas inlet system into a processing chamber 1, so as to pass near the surface of a thermal catalyst 5 provided adjacent to a substrata 20 disposed in the processing chamber 1. Surface treatment gas generates active seeds by a contact decomposing reaction caused by the thermal catalyst 5, and the active seeds reach to the surface of the substrate 20 to carry out a surface treatment such as removal of a natural oxide film. Thereafter, film forming gas is introduced into the processing chamber 1 through a film forming gas inlet system 3 so as to be fed to the substrate 20 passing near the surface of the thermal catalyst 5, whereby a prescribed insulating film is formed on the surface of the semiconductor substrate 20 through a catalyst CVD method. An interface between the formed insulating film and a semiconductor is of interfacial level density 1012eV-1cm-2 or below, so that a semiconductor device of high performance can be realized.

2. 发明专利

JP2001345280A METHOD OF CHEMICAL VAPOR DEPOSITION AND CHEMICAL VAPOR DEPOSITION APPARATUS 失效
公开(公告)号：JP2001345280A
公开(公告)日：2001-12-14
申请号：JP2001088652
申请日：2001-03-26
申请人： MATSUMURA HIDEKI , ANELVA CORP
发明人： MATSUMURA HIDEKI , MASUDA ATSUSHI , ISHIBASHI KEIJI , HONDA NAMIKO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus and a method of chemical vapor deposition in which reproducibility and mass production efficiency are improved by preventing deterioration of a heating element caused by raw-material gases to stabilize deposition environment in a CVD apparatus in which a film is formed on a substrate by generating active species of introduced gases introduced into a vacuum vessel by the heating element. SOLUTION: Inside of the vacuum vessel is separated by a barrier into an active-species generating space and a deposition processing space. The material gases fed to the active- species generating space are decomposed and activated by the heating element arranged in the active-species generating space, and the activated species are introduced into the deposition processing space specifically through piercing holes formed in the barrier. The raw- material gases are fed to a barrier inner space which is formed in the barrier and which is separated from the active-species generating space. The inner space is spatially connected to the deposition processing space via a plurality of diffusion holes, and the raw-material gases are introduced into the deposition processing space via the diffusion holes. In the deposition processing space, a chemical reaction between the material gases and the active species generated by decomposition and activation by the heating element takes place to deposit a film on the substrate. In such a way, the chemical vapor deposition apparatus and the method of chemical vapor deposition achieve the goals.

3. 发明专利

JP2006229152A Source of hydrogen atom, and method of transporting hydrogen atom in vacuum processing device 有权
标题翻译：氢原子的来源，以及在真空加工装置中运输氢原子的方法
公开(公告)号：JP2006229152A
公开(公告)日：2006-08-31
申请号：JP2005044413
申请日：2005-02-21
申请人： Canon Anelva Corp , Japan Advanced Institute Of Science & Technology Hokuriku , キヤノンアネルバ株式会社 , 国立大学法人北陸先端科学技術大学院大学
发明人： UMEMOTO HIRONOBU , MASUDA ATSUSHI , YONEYAMA KOJI , ISHIBASHI KEIJI , IKEMOTO MANABU
IPC分类号： H01L21/205 , C23C16/44 , H01L21/3065
CPC分类号： C23C16/4404 , H01J37/32477 , H01J37/32871
摘要： PROBLEM TO BE SOLVED: To provide a source of hydrogen atoms and a method of transporting hydrogen atoms in a vacuum processing device, which can effectively prevent recombination of hydrogen atoms making contact with the inner wall surface of a processing chamber and the inner wall surface of a transport line of the vacuum processing device.
SOLUTION: In the source of hydrogen atoms in the vacuum processing device, at least a part of a surface facing a space of a member, surrounding a hydrogen atom generating means is covered with SiO
2 . The hydrogen atom generating means is disposed in the space. In the method of transporting hydrogen atoms in the vacuum processing chamber for transporting the hydrogen atoms via the transport line whose inner wall surface is covered with SiO
2 , the hydrogen atoms, generated by the hydrogen atom generating means in the vacuum processing chamber, are transported to a desired location.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供氢原子的源和在真空处理装置中输送氢原子的方法，其可以有效地防止与处理室的内壁表面接触的氢原子和内部的内部真空处理装置的输送线的壁面。解决方案：在真空处理装置中的氢原子的来源中，围绕氢原子产生装置的面向空间的表面的至少一部分被SiO 2覆盖。氢原子产生装置设置在该空间中。在通过其内壁表面被SiO 2 覆盖的输送线输送氢原子的真空处理室中输送氢原子的方法中，氢原子发生装置产生的氢原子真空处理室被输送到期望的位置。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2004128322A Heating element cvd device and connecting structure between heating element and power feeding mechanism therein 有权
公开(公告)号：JP2004128322A
公开(公告)日：2004-04-22
申请号：JP2002292402
申请日：2002-10-04
申请人： Anelva Corp , Japan Advanced Inst Of Science & Technology Hokuriku , アネルバ株式会社 , 北陸先端科学技術大学院大学長
发明人： ISHIBASHI KEIJI , TANAKA MASAHIKO , KARASAWA MINORU , SUNAYAMA HIDEKI , YAMADA KAZUTAKA , MATSUMURA HIDEKI , MASUDA ATSUSHI
IPC分类号： C23C16/44 , C23C16/455 , C23C16/46 , H01L21/00 , H01L21/205
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/46 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a heating element CVD device in which a plurality of connecting terminals electrically connecting a heating element to a power feeding mechanism are electrically insulated, and held at a preliminarily decided position, and one or more connecting terminal holders for supporting a heating element connected to the connecting terminal oppositely to a substrate holder in order not to expose the connecting part region of the heating element connected to the connecting terminal to a space in a treatment container are set in the treatment container, and to improve the characteristics and stability of a formed film. SOLUTION: A shield board having a heating element through hole through which a heating element passes in a non-contact status, a shield board having a plurality of through-holes through which gas passes is arranged between the portion of a heating element extended through the heating element through hole to the inside of a treatment container and the face of a connecting terminal holder toward the treatment container. A connection pin whose diameter is larger than that of the heating element is arranged at the end of the heating element, and the connecting pin is fit into the small hole of the pin bearing of a connecting terminal having a small hole whose inner diameter is smaller than the diameter of the connecting pen and a slit extended to an axial direction on a peripheral wall formed with the same hole. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2006135349A Structure of connection between heating element and power supply mechanism in heating cvd device 有权
标题翻译：加热元件之间的连接结构和加热CVD装置中的电源机构之间的连接
公开(公告)号：JP2006135349A
公开(公告)日：2006-05-25
申请号：JP2005372665
申请日：2005-12-26
申请人： Canon Anelva Corp , Japan Advanced Institute Of Science & Technology Hokuriku , キヤノンアネルバ株式会社 , 国立大学法人北陸先端科学技術大学院大学
发明人： ISHIBASHI KEIJI , TANAKA MASAHIKO , KARASAWA MINORU , SUNAYAMA HIDEKI , YAMADA KAZUTAKA , MATSUMURA HIDEKI , MASUDA ATSUSHI
IPC分类号： H01L21/205 , C23C16/44 , H05B3/02
摘要： PROBLEM TO BE SOLVED: To improve characteristics of a film to be formed and stability in the CVD device of a heating element with a connecting terminal holder installed within one or more treatment containers, the connecting terminal holder being adapted to hold a plurality of connecting terminals each for electrically connecting the heating element and a power supply mechanism at a predetermined position while attaining electrical insulation, and to support the heating element connected to the relevant connecting terminal while facing a substrate holder so that a connecting portion area of the heating element connected to the connecting terminal can not be exposed in the space within the treatment containers. SOLUTION: A connecting pin with a diameter greater than that of a heating element is prepared in the terminal of the heating element; and the connecting pin is inserted into the small hole of the pin holder of a connecting terminal which includes the small hole with an inner diameter smaller than the diameter of the connecting pin, and which comprises a slot extending in an axial direction on a peripheral wall forming the small hole. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题为了提高安装在一个或多个处理容器内的连接端子座的加热元件的CVD装置中要形成的膜的特性和稳定性，连接端子保持器适于保持多个的连接端子，用于在实现电绝缘的同时将加热元件和供电机构电连接在预定位置，并且支撑连接到相关连接端子的加热元件，同时面对基板保持器，使得加热器的连接部分区域连接到连接端子的元件不能暴露在处理容器内的空间中。解决方案：在加热元件的端子中制备直径大于加热元件直径的连接销; 并且连接销插入到包括小于连接销直径的小直径的小孔的连接端子的销座的小孔中，并且包括在轴向方向上在周壁上延伸的槽形成小洞。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JPH0340283A FLOPPY DISK UNIT 失效
公开(公告)号：JPH0340283A
公开(公告)日：1991-02-21
申请号：JP17505389
申请日：1989-07-06
申请人： NEC CORP , NEC DATA TERMINAL LTD
发明人： MORISANE EIJIRO , MASUDA ATSUSHI
IPC分类号： G11B23/38 , G11B19/02 , G11B23/033
摘要： PURPOSE:To easily confirm an unused area by visually observing the label of a floppy medium by adding an engraving part to a floppy disk unit. CONSTITUTION:A disk unit 11 is composed of a control part 12, engraving part 13, read/write part 14 and I/O part 15. The I/O part 15 inputs data outputted from a host device 16 and the data inputted from the I/O part 15 are written into the medium by the read/write part 14. Then, the used area of the data is indexed by the control part 12 and the used area is engraved to a determined position for the label of the floppy medium by the engraving part 13. A label 18 is sticked to a floppy medium 17 and for example, a black circular point 18a is engraved to addresses 1-76, which are recorded on the label 18, by the engraving part 13. Thus, only by visually observing the label of the floppy medium 17, the unused area can be easily confirmed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式