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1. 发明专利

JP2012099699A Double tunnel magnetoresistance effect film 审中-公开
标题翻译：双层隧道磁阻效应膜
公开(公告)号：JP2012099699A
公开(公告)日：2012-05-24
申请号：JP2010247216
申请日：2010-11-04
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUNEKAWA KOJI , NAGAMINE YOSHINORI , NISHIMURA KAZUMASA
IPC分类号： H01L43/08 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a double tunnel magnetoresistance effect film having two tunnel barrier layers in which the MR ratio is enhanced, and to provide a production method therefor.SOLUTION: A first magnetization fixed layer is deposited to have an amorphous structure, and then a first tunnel barrier layer, a magnetization free layer, and a second tunnel barrier layer are deposited thereon to have a polycrystalline structure containing crystal grains. A second magnetization fixed layer is deposited further thereon and then heat treatment is performed thus producing a double tunnel magnetoresistance effect film having a crystal lattice connected continuously to all.
摘要翻译：要解决的问题：提供具有两个隧道势垒层的双隧道磁阻效应膜，其中MR比增加，并提供其制造方法。解决方案：沉积第一磁化固定层以具有无定形结构，然后在其上沉积第一隧道势垒层，磁化自由层和第二隧道势垒层，以具有含有晶粒的多晶结构。第二磁化固定层进一步沉积在其上，然后进行热处理，从而产生具有与所有连续连接的晶格的双隧道磁阻效应膜。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2010045398A Method for manufacturing magnetoresistance effect element 审中-公开
标题翻译：制造磁阻效应元件的方法
公开(公告)号：JP2010045398A
公开(公告)日：2010-02-25
申请号：JP2009261796
申请日：2009-11-17
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： MAEHARA DAIKI , OSADA TOMOAKI , DOI MIHOKO , TSUNEKAWA KOJI , WATANABE NAOKI
IPC分类号： H01L43/12 , C23F1/00 , C23F1/12 , G11B5/39 , H01L21/3065 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetoresistance effect element capable of preventing the reduction of the MR ratio of the element and keeping high performance as the magnetoresistance effect element even if an oxidized layer is formed on the top surface layer of a protective layer by an oxidation process inevitable in the manufacturing process by doubly stacking a mask material for fine processing without particular alteration to a manufacturing process for fine processing by dry etching in a vacuum.
SOLUTION: The method for dry etching a magnetoresistance effect element is composed of a magnetic multilayer film including at least two magnetic layers, wherein a second mask formed of one of Ru, Rh, Os, Nb, Ir, and Re is doubly stacked on a lower layer of a first mask formed of Ta.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造磁阻效应元件的方法，即使在顶表面上形成氧化层，其能够防止元件的MR比降低并保持高性能，作为磁阻效应元件通过在制造过程中不可避免地通过双重堆叠掩模材料进行精细加工而不会特别改变用于在真空中的干蚀刻的精细加工的制造工艺的氧化工艺的保护层层。解决方案：用于干蚀刻磁阻效应元件的方法由包括至少两个磁性层的磁性多层膜组成，其中由Ru，Rh，Os，Nb，Ir和Re中的一种形成的第二掩模是双重的堆叠在由Ta形成的第一掩模的下层上。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008172266A Method for manufacturing magnetoresistance element, and apparatus for manufacturing the magnetoresistance element 有权
标题翻译：制造磁阻元件的方法和制造磁阻元件的装置
公开(公告)号：JP2008172266A
公开(公告)日：2008-07-24
申请号：JP2008042175
申请日：2008-02-22
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NAGAMINE YOSHINORI , TSUNEKAWA KOJI , DAVID JAYAPURAWIRA , MAEHARA DAIKI
IPC分类号： H01L43/12 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetoresistance element having a high MR ratio, while being low in RA, and to provide an apparatus for manufacturing the magnetoresistance element.
SOLUTION: The magnetoresistance element which has an MgO layer between a first ferromagnetic layer and a second ferromagnetic layer has a step of forming the first ferromagnetic layer, a step of forming the MgO layer, and a step of forming the second ferromagnetic layer. The step of forming the MgO layer is performed under the condition that a substrate be at a floating voltage potential. Moreover, the step of forming the MgO layer may be performed, by placing the substrate to a substrate placing stage in which a part close to the substrate is an insulator. Moreover, the step of forming the MgO layer may be performed under the condition that the substrate be electrically insulated from a substrate holding part which holds the substrate.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有高MR比的磁阻元件的方法，同时RA低，并提供用于制造磁阻元件的装置。解决方案：在第一铁磁层和第二铁磁层之间具有MgO层的磁阻元件具有形成第一铁磁层的步骤，形成MgO层的步骤，以及形成第二铁磁层的步骤。在基板处于浮置电压电位的条件下进行形成MgO层的工序。此外，可以通过将基板放置到其中靠近基板的部分是绝缘体的基板放置台来进行形成MgO层的步骤。此外，可以在基板与保持基板的基板保持部电绝缘的条件下进行形成MgO层的工序。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007266584A Method and device for manufacturing magnetoresistive effect element 有权
标题翻译：用于制造磁阻效应元件的方法和装置
公开(公告)号：JP2007266584A
公开(公告)日：2007-10-11
申请号：JP2007034686
申请日：2007-02-15
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NAGAMINE YOSHINORI , TSUNEKAWA KOJI , DAVID JAYAPURAWIRA , MAEHARA DAIKI
IPC分类号： H01L43/12 , G01R33/09 , G11B5/39 , H01F10/30 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , C23C14/081 , C23C14/16 , C23C14/568 , H01J37/32458 , H01J37/32633 , H01J37/34 , H01J37/3429 , H01J37/3447 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method and device for manufacturing a magnetoresistive effect element having a high MR ratio (Magnetoresistance ratio) even at a low RA (electrical resistance value). SOLUTION: A magnetoresistive effect element having an MgO (magnesium oxide) layer is manufactured between a first ferromagnetic layer and a second ferromagnetic layer by depositing the MgO layer in a deposition chamber in which the surface of constituent members (a deposition chamber inner wall 37, the inner wall of an deposition-prevention shield 36, a partition plate 22, a shutter, etc. inside a first deposition chamber 21) that are provided inside the chamber for depositing the MgO layer is covered with a substance with high gettering effects against oxidizing gases such as oxygen and water. For the substance with high gettering effects, the substance with the value of oxygen gas adsorption energy of 145 kcal/mol or more is adequate, and Ta (tantalum) as the substance forming the magnetoresistive effect element is particularly preferred. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供即使在低RA（电阻值）下也具有制造具有高MR比（磁阻比）的磁阻效应元件的方法和装置。解决方案：通过在沉积室中沉积MgO层，在第一铁磁层和第二铁磁层之间制造具有MgO（氧化镁）层的磁阻效应元件，其中构成元件的表面（沉积室内壁37内，第一沉积室21内部的防沉积屏蔽36的内壁，隔板22，活门等）设置在用于沉积MgO层的室内部，被具有高吸气性的物质对氧化气体如氧气和水的影响。对于具有高吸气效果的物质，具有145kcal / mol以上的氧气吸附能量的物质是足够的，并且作为形成磁阻效应元素的物质的Ta（钽）是特别优选的。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2014003313A Manufacturing process of tunnel magnetoresistive element 有权
标题翻译：隧道磁阻元件的制造工艺
公开(公告)号：JP2014003313A
公开(公告)日：2014-01-09
申请号：JP2013163153
申请日：2013-08-06
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUNEKAWA KOJI , NAGAMINE YOSHINORI , NISHIMURA KAZUMASA , ERNULT FRANCK
IPC分类号： H01L43/12 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing process of a tunnel magnetoresistive element and a manufacturing apparatus which have comparatively small number of steps and excellent characteristics in RA uniformity, and have a high MR ratio acquired in low RA.SOLUTION: An embodiment of the present invention is a manufacturing process of a tunnel magnetoresistive element which has a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer, and the process manufacturing the tunnel barrier layer is a process in which a metal target is sputtered by applying an electric power to the metal target and forming plasma, and a first metal layer is film-formed on the first ferromagnetic layer. The manufacturing process has: a process of forming the first metal layer with oxygen doped by that oxygen gas is not introduced in only either one stage and the oxygen gas is introduced in only the other stage among an initial stage and a later stage of film forming; a process in which a metal oxide layer is formed by oxidation-treating the first metal layer with oxygen doped; and a process in which a second metal layer is film-formed on the metal oxide layer.
摘要翻译：要解决的问题：提供一种隧道磁阻元件的制造工艺和具有相对较少数量的步骤和优异的RA均匀性特性的制造装置，并且在低RA下获得高MR比。解决方案：本发明是具有第一铁磁层，隧道势垒层和第二铁磁层的隧道磁阻元件的制造工艺，制造隧道势垒层的工艺是通过施加金属靶溅射金属靶的过程对金属靶的电力并形成等离子体，第一金属层被膜形成在第一铁磁层上。该制造方法具有：仅在一个阶段中仅引入氧气掺杂的氧的第一金属层的形成过程，并且在初始阶段和后期的成膜阶段仅将氧气引入到另一个阶段 ; 通过用氧掺杂氧化处理第一金属层来形成金属氧化物层的工艺; 以及在金属氧化物层上成膜形成第二金属层的工序。

6. 发明专利

JP2010080806A Method of manufacturing magnetoresistive element, and storage medium for the same 审中-公开
标题翻译：制造磁性元件的方法及其相关的存储介质
公开(公告)号：JP2010080806A
公开(公告)日：2010-04-08
申请号：JP2008249533
申请日：2008-09-29
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUNEKAWA KOJI , NAGAMINE YOSHINORI
IPC分类号： H01L43/12 , C23C14/06 , C23C14/08 , C23C14/58 , H01F10/13 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L27/222 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L27/228 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetoresistive element having an MR ratio higher than that of the conventional art. SOLUTION: The method of manufacturing the magnetoresistive element includes the steps of forming a magnetization fixed layer, a magnetization free layer and a tunnel barrier layer on a substrate by using a sputtering method. In the magnetization fixed layer forming process, a ferromagnetic layer containing Co, Fe and B atoms is formed by a co-sputtering method using a first target containing Co, Fe and B atoms and a second target containing Co and Fe atoms and having a content of B atoms which is different from the content of B atoms in the first target. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造MR比高于常规技术的磁阻元件的方法。解决方案：制造磁阻元件的方法包括通过溅射法在衬底上形成磁化固定层，磁化自由层和隧道势垒层的步骤。在磁化固定层形成过程中，通过共溅射法，使用含有Co，Fe和B原子的第一靶和含有Co和Fe原子的第二靶，形成含有Co，Fe和B原子的铁磁层，的B原子不同于第一靶中的B原子的含量。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010010566A Method of depositing metal oxide insulating film 审中-公开
标题翻译：沉积金属氧化物绝缘膜的方法
公开(公告)号：JP2010010566A
公开(公告)日：2010-01-14
申请号：JP2008170567
申请日：2008-06-30
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： KIN MEGUMI , ERNULT FRANCK , TSUNEKAWA KOJI
IPC分类号： H01L21/316 , C23C14/08 , C23C14/34 , H01L21/31 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28282 , C23C14/08 , C23C14/34 , H01L21/31604 , H01L29/513 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a method of depositing a metal oxide insulating film by which leakage current density can be reduced and device characteristics and reliability can be improved in the deposition of the insulating film for a nonvolatile semiconductor memory element.
SOLUTION: A noble gas having an atomic weight above Kr is introduced, and a metal oxide target containing a metal element which is heavier than the introduced noble gas is used to form, by sputtering, the metal oxide insulating film containing a metal element of La, Hf, etc., heavier than the introduced noble gas like LaHfO, LaAlO, and ZrAlO.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种沉积金属氧化物绝缘膜的方法，通过该方法可以降低漏电流密度，并且在非易失性半导体存储元件的绝缘膜的沉积中可以改善器件特性和可靠性。解决方案：引入原子量高于Kr的惰性气体，并且使用含有比引入的惰性气体重的金属元素的金属氧化物靶，通过溅射形成含有金属的金属氧化物绝缘膜 La，Hf等元素比引入的惰性气体如LaHfO，LaAlO和ZrAlO重。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009164628A Method of manufacturing magnetoresistance effect element 有权
标题翻译：制造磁阻效应元件的方法
公开(公告)号：JP2009164628A
公开(公告)日：2009-07-23
申请号：JP2009091675
申请日：2009-04-06
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/12 , H01F10/14 , H01F10/16 , H01F10/32 , H01F41/18 , H01L21/316 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetoresistance effect element including a multilayer structure composed of a ferromagnetic layer and a barrier layer on the ferromagnetic layer, which provides a high MR ratio and higher mass productivity and practicality.
SOLUTION: The ferromagnetic layer of which at least the surface is in an amorphous state is formed, and then the barrier layer of a magnesium oxide having a single crystalline structure wherein (001) planes are aligned in parallel with the interface throughout layers is formed by sputtering, and furthermore annealing processing is performed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种制造磁阻效应元件的方法，该磁阻效应元件包括在铁磁层上由铁磁层和阻挡层组成的多层结构，其提供高MR比和较高的批量生产率和实用性。形成至少表面处于非晶状态的铁磁层，然后形成具有单晶结构的氧化镁的阻挡层，其中（001）面在整个层中与界面平行排列通过溅射形成，进而进行退火处理。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009158089A Method of manufacturing spin valve type massive magnetic reluctance film or tmr film 审中-公开
标题翻译：旋转阀类型大型磁性电感膜或TMR膜的制造方法
公开(公告)号：JP2009158089A
公开(公告)日：2009-07-16
申请号：JP2009092125
申请日：2009-04-06
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TSUNEKAWA KOJI , NAKAJIMA DAISUKE
IPC分类号： G11B5/39 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a spin valve type massive magnetic reluctance film having both a high magnetic reluctance variation rate (MR ratio) and a low inter-layer coupling magnetic field (Hin). SOLUTION: In the spin valve type massive magnetic reluctance film in which a buffer layer, an anti-ferromagnetic layer, a magnetic pinned layer, a non-magnetic transmission layer, a magnetic free layer, and a protective layer are continuously laminated on a substrate, the inter-layer coupling magnetic field operating between the magnetic pinned layer and magnetic free layer is reduced by performing plasma treatment for the prescribed lamination boundary, and a high MR ratio is obtained. COPYRIGHT: (C)2009,JPO&INPIT

10. 发明专利

JP2009044173A Magnetic multilayer film forming apparatus 审中-公开
标题翻译：磁性多层膜成膜装置
公开(公告)号：JP2009044173A
公开(公告)日：2009-02-26
申请号：JP2008259594
申请日：2008-10-06
申请人： Canon Anelva Corp , National Institute Of Advanced Industrial & Technology , キヤノンアネルバ株式会社 , 独立行政法人産業技術総合研究所
发明人： DAVID DJAYAPRAWIRA , TSUNEKAWA KOJI , NAGAI MOTOMASA , MAEHARA DAIKI , YAMAGATA SHINJI , WATANABE NAOKI , YUASA SHINJI
IPC分类号： H01L43/12 , C23C14/34 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic multilayer film forming apparatus by which a magnetoresistive element can be obtained having a high MR ratio and increased in mass-productivity and practicality. SOLUTION: Disclosed is the magnetic multilayer film forming apparatus wherein a first filming chamber 27A forming an amorphous ferromagnetic substance layer, a second filming chamber 27B forming an antiferromagnetic layer, and a third filming chamber 27C forming a magnesium oxide layer having a single-crystal structure where a (001) surface is oriented in parallel to an interface of a filming layer in the thickness of the filming layer are disposed while connected to a conveyance chamber 22 through gate valves 30, 30, and 30, respectively. A robot conveying device moving a substrate to the first to the third chambers 27A, 27B, and 27C is provided in the conveyance chamber 22. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁性多层膜形成装置，通过该磁性多层膜形成装置可以获得具有高MR比并且增加批量生产率和实用性的磁阻元件。解决方案：公开了一种磁性多层膜形成装置，其中形成非晶铁磁物质层的第一成膜室27A，形成反铁磁性层的第二成膜室27B和形成具有单一的铁磁性物质的氧化镁层的第三成膜室27C 在通过闸阀30,30和30分别连接到输送室22的同时，在（001）表面平行于成膜层的成膜层的界面取向成膜层的结晶结构。将输送基板移动到第一至第三室27A，27B和27C的机器人输送装置设置在输送室22中。（C）2009，JPO＆INPIT

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