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1. 发明专利

JP2006135349A Structure of connection between heating element and power supply mechanism in heating cvd device 有权
标题翻译：加热元件之间的连接结构和加热CVD装置中的电源机构之间的连接
公开(公告)号：JP2006135349A
公开(公告)日：2006-05-25
申请号：JP2005372665
申请日：2005-12-26
申请人： Canon Anelva Corp , Japan Advanced Institute Of Science & Technology Hokuriku , キヤノンアネルバ株式会社 , 国立大学法人北陸先端科学技術大学院大学
发明人： ISHIBASHI KEIJI , TANAKA MASAHIKO , KARASAWA MINORU , SUNAYAMA HIDEKI , YAMADA KAZUTAKA , MATSUMURA HIDEKI , MASUDA ATSUSHI
IPC分类号： H01L21/205 , C23C16/44 , H05B3/02
摘要： PROBLEM TO BE SOLVED: To improve characteristics of a film to be formed and stability in the CVD device of a heating element with a connecting terminal holder installed within one or more treatment containers, the connecting terminal holder being adapted to hold a plurality of connecting terminals each for electrically connecting the heating element and a power supply mechanism at a predetermined position while attaining electrical insulation, and to support the heating element connected to the relevant connecting terminal while facing a substrate holder so that a connecting portion area of the heating element connected to the connecting terminal can not be exposed in the space within the treatment containers. SOLUTION: A connecting pin with a diameter greater than that of a heating element is prepared in the terminal of the heating element; and the connecting pin is inserted into the small hole of the pin holder of a connecting terminal which includes the small hole with an inner diameter smaller than the diameter of the connecting pin, and which comprises a slot extending in an axial direction on a peripheral wall forming the small hole. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题为了提高安装在一个或多个处理容器内的连接端子座的加热元件的CVD装置中要形成的膜的特性和稳定性，连接端子保持器适于保持多个的连接端子，用于在实现电绝缘的同时将加热元件和供电机构电连接在预定位置，并且支撑连接到相关连接端子的加热元件，同时面对基板保持器，使得加热器的连接部分区域连接到连接端子的元件不能暴露在处理容器内的空间中。解决方案：在加热元件的端子中制备直径大于加热元件直径的连接销; 并且连接销插入到包括小于连接销直径的小直径的小孔的连接端子的销座的小孔中，并且包括在轴向方向上在周壁上延伸的槽形成小洞。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2008280548A Vacuum treatment apparatus 审中-公开
标题翻译：真空处理设备
公开(公告)号：JP2008280548A
公开(公告)日：2008-11-20
申请号：JP2007123142
申请日：2007-05-08
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： YAMADA KAZUTAKA , ISHIBASHI KEIJI , KARASAWA MINORU , TANAKA MASAHIKO , SUNAYAMA HIDEKI , OKADA OSAMU
IPC分类号： C23C16/46 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a vacuum treatment apparatus having a stage equipped with a temperature control mechanism capable of keeping a workpiece at a uniform temperature.
SOLUTION: The stage 17 of the vacuum treatment apparatus is equipped with the temperature control mechanism 40 which has a flow passage for passing a fluid therein, passes the fluid in the flow passage, and changes the flowing direction of the fluid.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有能够将工件保持在均匀温度的温度控制机构的台架的真空处理装置。解决方案：真空处理装置的阶段17配备有温度控制机构40，该温度控制机构40具有用于使流体流过的流路，使流路中的流体通过，并且改变流体的流动方向。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009111397A Method of etching deposition film 审中-公开
标题翻译：蚀刻沉积膜的方法
公开(公告)号：JP2009111397A
公开(公告)日：2009-05-21
申请号：JP2008283250
申请日：2008-11-04
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ISHIBASHI KEIJI , TANAKA MASAHIKO , KARASAWA MINORU
IPC分类号： H01L21/205 , C23C16/44 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a heating element CVD method in which the life of the heating element is prolonged, a fixing method of the heating element is improved, and productivity is improved in a heating element CVD system which decomposes and/or activates material gas introduced in a processing vessel (vacuum chamber) by the heating element and deposits a thin film on a substrate arranged in the processing vessel (vacuum chamber).
SOLUTION: The heating element CVD system with a gas introduction mechanism 321 is used, in which a connection part 33 in which the heating element 3 is connected to a power supply mechanism and/or a support part 31 in which the heating element is supported by a support is covered with a cover without contacting the heating element by interposing a gap between the connection part 33 and the support part 31, and introduces the gas in the gap between the cover and the connection part 33, the support part 31, and purge gas is introduced at the end of the heating element 3 inserted into a heating element insertion port provided at the connection part 33.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种加热元件的寿命延长的加热元件CVD方法，提高了加热元件的定影方法，并且在分解和/或加热元件的加热元件CVD系统中提高了生产率，或者通过加热元件激活在处理容器（真空室）中引入的材料气体，并将薄膜沉积在布置在处理容器（真空室）中的基板上。解决方案：使用具有气体引入机构321的加热元件CVD系统，其中将加热元件3连接到供电机构和/或支撑部31的连接部33，其中加热元件由支撑体支撑，覆盖有盖，通过在连接部33和支撑部31之间插入间隙而不与加热元件接触，并且将气体引入到盖和连接部33之间的间隙中，支撑部31 ，并且在插入设置在连接部33的加热元件插入口的加热元件3的端部处引入吹扫气体。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009027181A Chemical vapor deposition method using chemical vapor deposition apparatus 有权
标题翻译：使用化学蒸气沉积装置的化学气相沉积方法
公开(公告)号：JP2009027181A
公开(公告)日：2009-02-05
申请号：JP2008215341
申请日：2008-08-25
申请人： Canon Anelva Corp , Japan Science & Technology Agency , Matsumura Hideki , キヤノンアネルバ株式会社 , 松村英樹 , 独立行政法人科学技術振興機構
发明人： ISHIBASHI KEIJI , KARASAWA MINORU , TANAKA MASAHIKO
IPC分类号： H01L21/31 , C23C14/14 , C23C14/30 , C23C16/44 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a heating element CVD (chemical vapor deposition) method in which mixture of impurities into a thin film to be formed is suppressed.
SOLUTION: A raw material gas supplied into a treatment vessel 1 by a gas supply system 2 is decomposed or activated on a surface of a heating element 3 kept at a prescribed high temperature by an energy supply mechanism 30 to form a thin film on a surface of a substrate 9. For the heating element 3, a coating film of tungsten of which the impurity metal content is ≤0.01 weight% is formed on a surface of a base member made of tungsten, by an electron beam vapor deposition method taking tungsten powder of which the impurity metal content is ≤0.01 weight%, as an evaporation source or a chemical vapor deposition method using reduction with hydrogen of tungsten hexafluoride. Discharge of impurity metals from the heating element 3 is suppressed, and mixture of impurity metals into the thin film to be formed is suppressed also.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种加热元件CVD（化学气相沉积）方法，其中抑制了待形成的薄膜中的杂质混合物。解决方案：通过气体供给系统2供给到处理容器1中的原料气体在能量供给机构30中在保持规定的高温的加热元件3的表面上分解或活化，形成薄膜在基板9的表面上。对于加热元件3，通过电子束气相沉积法在钨基材的表面上形成杂质金属含量≤0.01重量％的钨涂层将杂质金属含量≤0.01重量％的钨粉作为蒸发源或使用六氟化钨的氢还原的化学气相沉积法。抑制来自加热元件3的杂质金属的放电，也抑制杂质金属混入形成的薄膜。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009065192A Production method of silicon film and silicon nitride film 审中-公开
标题翻译：硅胶和硅胶膜的生产方法
公开(公告)号：JP2009065192A
公开(公告)日：2009-03-26
申请号：JP2008286883
申请日：2008-11-07
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ISHIBASHI KEIJI , TANAKA MASAHIKO , KARASAWA MINORU
IPC分类号： H01L21/205 , C23C16/24 , C23C16/42 , C23C16/44 , C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a heating element CVD method by which a heating element has a long life, a fixed method of the heating element is improved, and the productivity is enhanced, in a heating element CVD apparatus by which a raw material gas introduced into a treating container (vacuum chamber) is decomposed and/or activated by the heating element to deposit a thin film on a substrate located in the treating container (vacuum chamber). SOLUTION: By using a heating element CVD apparatus, in which a connection part 33 at which a heating element 3 is connected to a power supplying mechanism and/or a supporting part at which the heating element 3 is supported by a supporter 31 are/is covered by a cover while interposing a gap between the connection part 33 and the supporter and without contacting the heating element 3 with the cover, and which has a gas introducing mechanism 321 introducing a gas into the gap between the cover and the connection part 33, a purging gas is introduced into a terminal of the heating element 3 inserted into a heating element insertion slot equipped in the connection part 33. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了提供一种加热元件CVD寿命长的加热元件CVD方法，在加热元件CVD装置中提高加热元件的固定方法并提高生产率，导入处理容器（真空室）的原料气体被加热元件分解和/或活化，以在位于处理容器（真空室）的基板上沉积薄膜。解决方案：通过使用加热元件CVD装置，其中将加热元件3连接到供电机构的连接部33和/或加热元件3由支撑件31支撑的支撑部被覆盖，同时在连接部33和支撑体之间插入间隙，并且不使加热元件3与盖接触，并且具有气体引入机构321，其将气体引入盖和连接件之间的间隙在第33部分中，将吹扫气体引入到插入到连接部件33中的加热元件插入槽中的加热元件3的端子中。（C）2009，JPO＆INPIT

6. 发明专利

JP2009038398A Method for fabricating silicon film and silicon nitride film 审中-公开
标题翻译：硅胶薄膜和氮化硅薄膜的制备方法
公开(公告)号：JP2009038398A
公开(公告)日：2009-02-19
申请号：JP2008283110
申请日：2008-11-04
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ISHIBASHI KEIJI , TANAKA MASAHIKO , KARASAWA MINORU
IPC分类号： H01L21/205 , C23C16/24 , C23C16/42 , C23C16/44 , H01L21/31 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a heating element CVD method which extends the lifetime of a heating element and improves a fixing method of the heating element and has an improved productivity, with respect to a heating element CVD device wherein raw material gas introduced into a treatment vessel (vacuum chamber) is decomposed and/or activated by the heating element to deposit a thin film on a substrate disposed in the treatment vessel. SOLUTION: In the heating element CVD method, the heating element CVD device is used wherein a connection part for connecting the heating element to a power supply mechanism and/or a supporting part for supporting the heating element on a support member are covered with a cover with a gap therebetween without contacting the heating element, and a gas introducing mechanism capable of introducing gas to gaps among the cover, the connection part, and the supporting part is provided, and purge gas is introduced to an end part of the heating element inserted to a heating element insertion port provided in the connection part. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种加热元件CVD方法，该加热元件CVD方法延长了加热元件的寿命，并且改善了加热元件的定影方法，并且具有提高的生产率，相对于其中原料气体引入处理容器（真空室）被加热元件分解和/或激活，以将薄膜沉积在设置在处理容器中的基底上。解决方案：在加热元件CVD方法中，使用加热元件CVD装置，其中覆盖用于将加热元件连接到供电机构和/或用于将加热元件支撑在支撑构件上的支撑部分的连接部分被覆盖具有间隙而不与加热元件接触的盖，并且能够将气体引入盖，连接部和支撑部之间的间隙的气体引入机构，并且将净化气体引入到加热元件插入设置在连接部中的加热元件插入口。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008113014A Heating element cvd system and deposition method 有权
标题翻译：加热元素CVD系统和沉积方法
公开(公告)号：JP2008113014A
公开(公告)日：2008-05-15
申请号：JP2007303090
申请日：2007-11-22
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ISHIBASHI KEIJI , TANAKA MASAHIKO , KARASAWA MINORU
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a heating element CVD (Chemical Vapor Deposition) system capable of elongating the life of a heating element.
SOLUTION: The heating element CVD system includes covers 301 and 302 provided with spaces inside the covers and around the extension section of the heating element 3; and gas introducing mechanism for introducing gas into the spaces in the covers 301 and 302, wherein the covers 301 and 302 cover either of or both of: connection sections of the heating element 3 and the power supplying mechanism; and supporting sections for the heating element 3 on a support 31. A material gas supplied to the processing chamber is prevented from entering the spaces in the covers by making the gas, which is introduced into the spaces in the covers 301 and 302, flow from the spaces around the extension section of the heating element to the inside of the processing chamber.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够延长加热元件寿命的加热元件CVD（化学气相沉积）系统。解决方案：加热元件CVD系统包括在盖内和围绕加热元件3的延伸部分设置空间的盖301和302; 以及用于将气体引入到盖301,302中的空间中的气体引入机构，其中盖子301和302覆盖加热元件3和供电机构的连接部分中的一个或两个; 以及用于支撑件31上的加热元件3的支撑部分。通过使引入到盖301和302中的空间中的气体从盖301,301中的空间流出，供应到处理室的材料气体被进入到盖中的空间加热元件的延伸部分周围到处理室内部的空间。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2009044190A Etching method of attached film 审中-公开
标题翻译：连接膜的蚀刻方法
公开(公告)号：JP2009044190A
公开(公告)日：2009-02-26
申请号：JP2008286894
申请日：2008-11-07
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： ISHIBASHI KEIJI , TANAKA MASAHIKO , KARASAWA MINORU
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a heating element CVD method for prolonging the service life of a heating element, improving the fixing method of the heating element and improving productivity in a heating element CVD apparatus for decomposing and/or activating a raw material gas introduced into a treatment container (vacuum chamber) by the heating element and depositing a thin film on a substrate disposed inside the treatment container (vacuum chamber).
SOLUTION: Using the heating element CVD apparatus wherein a connection part where the heating element is connected to a power supply mechanism and/or a support part where the heating element is supported by a support are covered with a cover with a gap present between the connection part and the support part without being in contact with the heating element and a gas introducing mechanism capable of introducing a gas to the gap between the cover and the connection part and the support part is provided, the problem is solved by the heating element CVD method of introducing a purge gas to the end part of the heating element inserted to a heating element insertion port provided on the connection part.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于延长加热元件的使用寿命的加热元件CVD方法，改进加热元件的固定方法并提高用于分解和/或激活原料的加热元件CVD设备的生产率原料气体通过加热元件引入处理容器（真空室）中并在设置在处理容器（真空室）内的基板上沉积薄膜。解决方案：使用加热元件CVD装置，其中加热元件连接到供电机构和/或加热元件由支撑件支撑的支撑部分的连接部分被覆盖有具有间隙的盖在连接部和支撑部之间不与加热元件接触的气体引入机构，以及能够将气体引入到盖与连接部和支撑部之间的间隙的气体导入机构，通过加热来解决问题将元件CVD方法将吹扫气体引入插入到设置在连接部上的加热元件插入口的加热元件的端部。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008240051A Auxiliary exhaust device 审中-公开
标题翻译：辅助排气装置
公开(公告)号：JP2008240051A
公开(公告)日：2008-10-09
申请号：JP2007080900
申请日：2007-03-27
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： OKADA OSAMU , TANAKA MASAHIKO
IPC分类号： C23C16/44 , C23C16/50 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an auxiliary exhaust device which can reduce the content of oxygen or moisture in a chamber.
SOLUTION: The auxiliary exhaust device is installed in a film deposition apparatus for depositing a silicon film or a silicon-containing film by using, as raw materials, a silicon-containing raw material gas and hydrogen or ammonia. The auxiliary exhaust device is constituted of a catalyst body formed of a high melting point metal and plate materials which are arranged in the vicinity of the catalyst body and heated to 300-600°C. The plate materials are arranged so as to form gaps through which gas molecules reach the catalyst body, and the auxiliary exhaust device is installed in an exhaust chamber or in the vicinity of an exhaust pump of the film deposition apparatus.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种辅助排气装置，其能够降低室内氧气或湿气的含量。解决方案：辅助排气装置安装在用于沉积硅膜或含硅膜的成膜装置中，作为原料使用含硅原料气体和氢气或氨。辅助排气装置由布置在催化剂体附近并加热至300-600℃的由高熔点金属形成的催化剂体和板材构成。平板材料被布置成形成间隙，气体分子通过该间隙到达催化剂体，并且辅助排气装置安装在排气室或成膜装置的排气泵附近。版权所有（C）2009，JPO＆INPIT

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