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1. 发明专利

JP2008244022A Organic semiconductor device and manufacturing method thereof 有权
标题翻译：有机半导体器件及其制造方法
公开(公告)号：JP2008244022A
公开(公告)日：2008-10-09
申请号：JP2007080361
申请日：2007-03-26
申请人： Kyushu Univ , Nissan Chem Ind Ltd , 国立大学法人九州大学 , 日産化学工業株式会社
发明人： ADACHI CHIHAYA , YAHIRO MASAYUKI , TANAKA AKIHIRO , OODOI KEISUKE
IPC分类号： H01L29/786 , C08F2/50 , C08F8/04 , C08F12/30 , C08F20/38 , H01L21/312 , H01L21/336 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide an organic semiconductor device comprising a gate insulating film and a surface treated layer of the gate insulating film having excellent electrical characteristics which can be manufactured by applying an organic material, and to provide a manufacturing method thereof.
SOLUTION: This organic semiconductor device is characterized by comprising a substrate, a source electrode, a drain electrode, an organic semiconductor layer for connecting the source electrode and the drain electrode, a gate electrode for applying an electric field to the organic semiconductor layer, and a gate insulating film arranged between the organic semiconductor layer and the gate electrode, while the gate insulating film contains a hyper-branched polymer as a component thereof. The manufacturing method of this semiconductor device is also provided.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种有机半导体器件，其包括可通过施加有机材料制造的具有优异电特性的栅极绝缘膜和栅极绝缘膜的表面处理层，并提供其制造方法。解决方案：该有机半导体器件的特征在于包括基板，源电极，漏电极，用于连接源电极和漏电极的有机半导体层，用于向有机半导体施加电场的栅电极层，以及配置在有机半导体层与栅电极之间的栅极绝缘膜，同时栅极绝缘膜含有超支化聚合物作为其成分。还提供了该半导体器件的制造方法。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2011236299A Liquid crystalline organic semiconductor polymer, method for producing the same, and organic nanoporous material 有权
标题翻译：液晶有机半导体聚合物，其生产方法和有机纳米材料
公开(公告)号：JP2011236299A
公开(公告)日：2011-11-24
申请号：JP2010107644
申请日：2010-05-07
申请人： Beans Laboratory , Kyushu Univ , Lintec Corp , リンテック株式会社 , 国立大学法人九州大学 , 技術研究組合Beans研究所
发明人： ADACHI CHIHAYA , YAHIRO MASAYUKI , KATO KUNIHISA , MUTO TAKESHI
IPC分类号： C08F8/14 , C08F20/06 , C08F22/02 , C08J9/26 , C08L33/02 , C08L35/00 , H01L29/786 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide a block copolymer producible of an organic nanoporous material useful in applications as an organic device such as an organic FET (field-effect transistor).SOLUTION: This liquid crystalline organic semiconductor polymer includes a single block copolymer obtained by subjecting an optional -COOH group in a carboxylic acid group-containing polymer expressed by general formula (1) to esterification reaction with a specific hydroxy group-containing oligothiophene derivative, or the block copolymer and the carboxylic acid group-containing polymer expressed by general formula (1), where the ratio of the oligothiophene-containing ester group in the block copolymer to the whole carboxylic acid in the total of the block copolymer and the carboxylic acid group-containing polymer is 100:0 to more than 35: less than 65 (molar ratio). Where in the formula, Ris H, methyl or -CHCOOH; Ris H or methyl; Ris H or -COOH; X is a hydrophilic group; Z is a halogen; m is an integer of 2-500; and p is 0 or 1.
摘要翻译：要解决的问题：提供可用于有机FET（场效应晶体管）等有机器件的有机纳米多孔材料的嵌段共聚物。解决方案：该液晶有机半导体聚合物包括通过使由通式（1）表示的含羧酸基的聚合物中的任选的-COOH基团与特定的含羟基的低聚噻吩进行酯化反应而获得的单嵌段共聚物衍生物，或由通式（1）表示的嵌段共聚物和含羧酸基的聚合物，其中嵌段共聚物中的含低聚噻吩的酯基与整个羧酸的比例在嵌段共聚物和含羧酸基的聚合物为100:0至大于35：小于65（摩尔比）。在式中，R 1 是H，甲基或-CH 2 COOH; R 2 是H或甲基; R 3 是H或-COOH; X是亲水基团; Z是卤素; m为2-500的整数; p为0或1.版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011118172A Low threshold organic inverse-oversaturation absorbing material 有权
标题翻译：低阈值有机反相吸收材料
公开(公告)号：JP2011118172A
公开(公告)日：2011-06-16
申请号：JP2009275813
申请日：2009-12-03
申请人： Beans Laboratory , Kyushu Univ , Lintec Corp , Panasonic Electric Works Co Ltd , パナソニック電工株式会社 , リンテック株式会社 , 国立大学法人九州大学 , 技術研究組合Beans研究所
发明人： HIRATA SHUZO , ADACHI CHIHAYA , YAHIRO MASAYUKI , NAKADA MANABU , NAKADA YASUKAZU
IPC分类号： G02F1/361
摘要： PROBLEM TO BE SOLVED: To provide a low threshold organic inverse-oversaturation absorbing material which shows a significant increase in the absorbance of the material by weak steady light such as light from an LED, a semiconductor laser and sun rays having an energy of not more than 1 W/cm 2 and in an order of several mW/cm 2 in air at a normal temperature, and allowing the formation of a medium having a large area. SOLUTION: The inverse-oversaturation absorbing material comprises a matrix having a diffusion coefficient of smaller than 10 -15 cm 2 /s at a normal temperature and forming a disordered state a photosensitizer having an inter-system crossing efficiency of 50% or hig and a phosphorescent quantum efficiency of 0.1 sec or longer at room temperature and a dye having a long excited state lif, showing a phosphorescent life time of 0.3 sec or longer in a rigid medium at 77K. In the material, the lowest excited triplet energy of the photosensitizer is higher than the lowest excited triplet energy of the dye having a long excited state life, and the absorbance of the photosensitizer in the ground state at a wavelength of 400 to 600 nm is smaller than the absorbance of super-absorption in the excited triplet state of the dye having a long excited state life. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种低阈值有机反过饱和吸收材料，其通过弱稳定光显示出材料的吸光度的显着增加，例如来自LED的光，半导体激光器和具有能量的太阳光线在常温下在空气中不超过1W / cm 2 / SP>并且在几mW / cm 2 / SP>的数量级，并且允许形成具有大的介质区。解反应：反过饱和吸收材料包括在常温下具有小于10 -15 cm 2 / s的基质，并形成无序说明在室温下具有系统间交叉效率为50％或以上且磷光量子效率为0.1秒以上的光敏剂，以及具有长激发态的染料，其荧光寿命为0.3秒以上，在刚性介质为77K。在该材料中，光敏剂的最低激发三重态能量高于具有长激发态寿命的染料的最低激发三重态能量，并且在400至600nm的波长处于基态的光敏剂的吸光度较小比具有长激发态寿命的染料的激发三重态的超吸收的吸光度。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010232479A Organic optoelectric transducer 审中-公开
标题翻译：有机光电传感器
公开(公告)号：JP2010232479A
公开(公告)日：2010-10-14
申请号：JP2009079320
申请日：2009-03-27
申请人： Kyushu Univ , Lintec Corp , Micromachine Center , Panasonic Electric Works Co Ltd , パナソニック電工株式会社 , リンテック株式会社 , 国立大学法人九州大学 , 財団法人マイクロマシンセンター
发明人： NAKADA MANABU , ADACHI CHIHAYA , YAHIRO MASAYUKI , NAKANOYA HAJIME , NAKADA YASUKAZU
IPC分类号： H01L51/42 , H01L51/50
CPC分类号： Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide an organic optoelectric transducer capable of improving the conversion efficiency in photoelectric conversion layers. SOLUTION: The organic optoelectric transducer includes a substrate 1, a first electrode 2 formed at one surface side of the substrate 1; a second electrode 4 that is at a side opposite to the side of the substrate 1 in the first electrode 2 and opposes the first electrode 2; a photoelectric conversion layer 3, provided between the first and second electrodes 2, 4; and a surface protection layer 7; formed to cover the exposed surfaces of the first electrode 2, the photoelectric conversion layer 3, and the second electrode 4 on one surface side of the substrate 1. The photoelectric conversion layer 3 includes a number of organic nanostructures 5, provided at the side of the photoelectric conversion layer 3 in the first electrode 2, and a functional layer 6, in which the respective organic nanostructures 5 are embedded and which is formed from an organic semiconductor material, different from that of the organic nanostructure 5. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高光电转换层的转换效率的有机光电传感器。有机光电传感器包括基板1，形成在基板1的一个表面侧的第一电极2; 在第一电极2的与基板1侧相反的一侧的第二电极4，与第一电极2相对; 设置在第一和第二电极2,4之间的光电转换层3; 和表面保护层7; 形成为覆盖基板1的一个表面侧上的第一电极2，光电转换层3和第二电极4的暴露表面。光电转换层3包括多个有机纳米结构5，其设置在第一电极2中的光电转换层3和其中嵌入有机纳米结构5并且由有机半导体材料形成的与有机纳米结构5不同的功能层6。版权所有：（C）2011，JPO＆INPIT

5. 发明专利

JP2008098433A Carbazole derivative and organic solid-state laser material using the same 有权
标题翻译：使用它的卡博唑衍生物和有机固体激光材料
公开(公告)号：JP2008098433A
公开(公告)日：2008-04-24
申请号：JP2006278910
申请日：2006-10-12
申请人： Kyushu Univ , Mitsubishi Chemicals Corp , Rohm Co Ltd , ローム株式会社 , 三菱化学株式会社 , 国立大学法人九州大学
发明人： NAKANOYA HAJIME , ADACHI CHIHAYA , YAHIRO MASAYUKI , AKIYAMA SEIJI , FURUNO TOMOMI
IPC分类号： H01S3/17 , C07D209/86
摘要： PROBLEM TO BE SOLVED: To provide an organic solid-state laser material that exhibits ASE characteristics while being high in light-emitting efficiency.
SOLUTION: The organic solid-state laser material includes a carbazole derivative expressed by a general formula (I). Here, in the formula (I), X represents an arbitrary substituent having conjugatable π electrons, and n represents an integer of zero or one.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有ASE特性同时具有高发光效率的有机固态激光材料。解决方案：有机固态激光材料包括由通式（I）表示的咔唑衍生物。这里，在式（I）中，X表示具有可共轭π电子的任意取代基，n表示0或1的整数。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2008106032A Carbazole derivative and organic solid laser material using the same 审中-公开
标题翻译：使用相同的卡博唑衍生物和有机固体激光材料
公开(公告)号：JP2008106032A
公开(公告)日：2008-05-08
申请号：JP2007029436
申请日：2007-02-08
申请人： Kyushu Univ , Mitsubishi Chemicals Corp , Rohm Co Ltd , ローム株式会社 , 三菱化学株式会社 , 国立大学法人九州大学
发明人： NAKANOYA HAJIME , ADACHI CHIHAYA , YAHIRO MASAYUKI , AKIYAMA SEIJI
IPC分类号： C07D209/86 , H01S3/16
摘要： PROBLEM TO BE SOLVED: To obtain an organic solid laser material exhibiting semiconductor characteristics and having a low ASE threshold value.
SOLUTION: The organic solid laser material contains a carbazole derivative represented by general formula (I) (X and Y are each independently a divalent conjugate connecting group; A is a divalent connecting group).
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：获得具有低ASE特性并具有低ASE阈值的有机固体激光材料。解决方案：有机固体激光材料含有由通式（I）表示的咔唑衍生物（X和Y各自独立地为二价共轭连接基团; A为二价连接基团）。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2010232533A Etching method 审中-公开
标题翻译：蚀刻方法
公开(公告)号：JP2010232533A
公开(公告)日：2010-10-14
申请号：JP2009080209
申请日：2009-03-27
申请人： Kyushu Univ , Lintec Corp , Micromachine Center , Panasonic Electric Works Co Ltd , パナソニック電工株式会社 , リンテック株式会社 , 国立大学法人九州大学 , 財団法人マイクロマシンセンター
发明人： HIRAIDE MASAYA , ADACHI CHIHAYA , YAHIRO MASAYUKI , SAGAWA SEIJI , KUBOTA TOMOHIRO , TSURU NORIHIKO , NAKADA MANABU , NAKADA YASUKAZU
IPC分类号： H01L21/3065 , H01L21/302 , H01L51/05 , H01L51/40 , H01L51/42 , H01L51/50 , H05B33/10
CPC分类号： Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide an etching method for etching an organic semiconductor compound by a neutral particle beam without damaging the object compared with a plasma treatment.
SOLUTION: In the etching method, a substrate 26 on which a thin film 28 of organic semiconductor is formed is irradiated with the neutral particle beam for etching. It is desirable that the neutral particle beam contains oxygen, and that the organic semiconductor is one of acenes, bisstyrylbenzene derivatives, oligothiophene derivatives, phthalocyanines, perylene derivatives, fullerene, and fullerene derivatives.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于通过中性粒子束蚀刻有机半导体化合物而不损坏物体的蚀刻方法与等离子体处理相比。解决方案：在蚀刻方法中，用形成有机半导体薄膜28的基板26照射用于蚀刻的中性粒子束。期望中性粒子束含有氧，有机半导体是α-烯烃，双苯乙烯基苯衍生物，低聚噻吩衍生物，酞菁，苝衍生物，富勒烯和富勒烯衍生物之一。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010232480A Organic transistor 有权
标题翻译：有机晶体管
公开(公告)号：JP2010232480A
公开(公告)日：2010-10-14
申请号：JP2009079321
申请日：2009-03-27
申请人： Kyushu Univ , Lintec Corp , Micromachine Center , Panasonic Electric Works Co Ltd , パナソニック電工株式会社 , リンテック株式会社 , 国立大学法人九州大学 , 財団法人マイクロマシンセンター
发明人： NAKADA MANABU , ADACHI CHIHAYA , YAHIRO MASAYUKI , NAKANOYA HAJIME , NAKADA YASUKAZU
IPC分类号： H01L29/786 , H01L21/336 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide an organic transistor capable of improving the crystallinity of organic semiconductor layers.
SOLUTION: The organic transistor includes a gate electrode 2 formed at one surface side of a substrate 1; a gate insulation film 3 formed on the gate electrode 2; a source electrode 4 and a drain electrode 5, formed separately at a surface side opposite to the side of the gate electrode 2 in the gate insulating film 3; and an organic semiconductor layer 7, of which one portion is formed in a region between the source electrode 4 and the drain electrode 5 on the surface side of the gate insulation film 3. Also, a self-organized monomolecular film 8 is provided between the organic semiconductor layer 7 and the gate insulating film 3. The organic semiconductor layer 7 includes an organic semiconductor thin film, formed with a number of organic nanostructures (organic nanodots) 6 formed in a region between the source electrode 4 and the drain electrode 5, as a core on a surface opposite to the side of the gate insulating film 3 in the self-organized monomolecular film 8.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供能够提高有机半导体层的结晶性的有机晶体管。解决方案：有机晶体管包括形成在衬底1的一个表面侧的栅电极2; 形成在栅电极2上的栅极绝缘膜3; 在栅极绝缘膜3中与栅电极2的相反侧的表面侧分别形成的源电极4和漏电极5; 以及在栅极绝缘膜3的表面侧的源极电极4和漏极电极5之间的区域中形成有一部分的有机半导体层7.另外，在有机半导体层7之间设置自组织单分子膜8 有机半导体层7和栅极绝缘膜3.有机半导体层7包括形成在源电极4和漏电极5之间的区域中的多个有机纳米结构（有机纳米点）6的有机半导体薄膜，作为在自组织单分子膜8中的与栅极绝缘膜3的侧面相反的表面上的核心。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010228066A Production method of nano-dot 审中-公开
标题翻译：纳米生产方法
公开(公告)号：JP2010228066A
公开(公告)日：2010-10-14
申请号：JP2009080247
申请日：2009-03-27
申请人： Kyushu Univ , Lintec Corp , Micromachine Center , Panasonic Electric Works Co Ltd , パナソニック電工株式会社 , リンテック株式会社 , 国立大学法人九州大学 , 財団法人マイクロマシンセンター
发明人： HIRAIDE MASAYA , ADACHI CHIHAYA , YAHIRO MASAYUKI , SAGAWA SEIJI , KUBOTA TOMOHIRO , TSURU NORIHIKO , NAKADA MANABU , NAKADA YASUKAZU
IPC分类号： B82B3/00 , H01L51/05 , H01L51/40 , H01L51/42
CPC分类号： Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide a production method of nano-dots, by which nano-dots can be efficiently produced in an organic semiconductor.
SOLUTION: This invention relates to the production method of nano-dots, in which nano-dots having an average major diameter of 5 to 800 nm is produced by irradiating a thin film made of an organic semiconductor with a neutral particle beam, wherein the neutral particle beam is preferably made using oxygen, and the organic semiconductor is preferably anyone of acenes, bis(styryl)benzene derivatives, oligothiophene derivatives, phthalocyanines, perylene derivatives, and fullerenes or fullerene derivatives.
COPYRIGHT: (C)2011,JPO&INPIT

10. 发明专利

JP2008163190A Diphenyl ethene derivative and organic solid-state laser material using the same 审中-公开
标题翻译：二苯乙烯衍生物和有机固体激光材料
公开(公告)号：JP2008163190A
公开(公告)日：2008-07-17
申请号：JP2006354379
申请日：2006-12-28
申请人： Kyushu Univ , Mitsubishi Chemicals Corp , Rohm Co Ltd , ローム株式会社 , 三菱化学株式会社 , 国立大学法人九州大学
发明人： NAKANOYA HAJIME , ADACHI CHIHAYA , YAHIRO MASAYUKI , AKIYAMA SEIJI , FURUNO TOMOMI
IPC分类号： C09K11/06 , C07D209/86 , H01S5/36
摘要： PROBLEM TO BE SOLVED: To provide an organic solid-state laser material which exhibits ASE characteristics and has high luminous efficiency.
SOLUTION: The organic solid-state laser material includes a specific diphenylethene derivative, favorably a derivative represented by formula (II). In formula (II), X denotes any bivalent bonding group having π-electrons capable of conjugating, and n is an integer satisfying 1≤n≤5.
COPYRIGHT: (C)2008,JPO&INPIT

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