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1. 发明专利

JP2008098433A Carbazole derivative and organic solid-state laser material using the same 有权
标题翻译：使用它的卡博唑衍生物和有机固体激光材料
公开(公告)号：JP2008098433A
公开(公告)日：2008-04-24
申请号：JP2006278910
申请日：2006-10-12
申请人： Kyushu Univ , Mitsubishi Chemicals Corp , Rohm Co Ltd , ローム株式会社 , 三菱化学株式会社 , 国立大学法人九州大学
发明人： NAKANOYA HAJIME , ADACHI CHIHAYA , YAHIRO MASAYUKI , AKIYAMA SEIJI , FURUNO TOMOMI
IPC分类号： H01S3/17 , C07D209/86
摘要： PROBLEM TO BE SOLVED: To provide an organic solid-state laser material that exhibits ASE characteristics while being high in light-emitting efficiency.
SOLUTION: The organic solid-state laser material includes a carbazole derivative expressed by a general formula (I). Here, in the formula (I), X represents an arbitrary substituent having conjugatable π electrons, and n represents an integer of zero or one.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有ASE特性同时具有高发光效率的有机固态激光材料。解决方案：有机固态激光材料包括由通式（I）表示的咔唑衍生物。这里，在式（I）中，X表示具有可共轭π电子的任意取代基，n表示0或1的整数。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008163190A Diphenyl ethene derivative and organic solid-state laser material using the same 审中-公开
标题翻译：二苯乙烯衍生物和有机固体激光材料
公开(公告)号：JP2008163190A
公开(公告)日：2008-07-17
申请号：JP2006354379
申请日：2006-12-28
申请人： Kyushu Univ , Mitsubishi Chemicals Corp , Rohm Co Ltd , ローム株式会社 , 三菱化学株式会社 , 国立大学法人九州大学
发明人： NAKANOYA HAJIME , ADACHI CHIHAYA , YAHIRO MASAYUKI , AKIYAMA SEIJI , FURUNO TOMOMI
IPC分类号： C09K11/06 , C07D209/86 , H01S5/36
摘要： PROBLEM TO BE SOLVED: To provide an organic solid-state laser material which exhibits ASE characteristics and has high luminous efficiency.
SOLUTION: The organic solid-state laser material includes a specific diphenylethene derivative, favorably a derivative represented by formula (II). In formula (II), X denotes any bivalent bonding group having π-electrons capable of conjugating, and n is an integer satisfying 1≤n≤5.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有ASE特性并且具有高发光效率的有机固态激光材料。解决方案：有机固态激光材料包括特定的二苯乙烯衍生物，有利地是由式（II）表示的衍生物。在式（II）中，X表示具有π共轭的任何二价键合基团，n为满足1≤n≤5的整数。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JPH0817969A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0817969A
公开(公告)日：1996-01-19
申请号：JP14419094
申请日：1994-06-27
申请人： ROHM CO LTD
发明人： YAMAZAKI KOICHI , OTANI KENJI , INOUE KOICHI , NAGANUMA KEISUKE , FURUNO TOMOMI
IPC分类号： H01L23/29 , H01L23/31 , H01L23/34
摘要： PURPOSE:To efficiently dissipate heat in a semiconductor device to be in a simple structure by a method wherein the surface of the semiconductor device is covered with a heat dissipating solid or jelly heat conductive insulator to be entirely molded with resin. CONSTITUTION:A circuit part 2 is formed on a semiconductor substrate 1 to provide a heat dissipating solid or jelly heat conductive insulator 3 on the surface of the circuit part 2. Next, the whole part is molded in an insulating resin 8. Thus, the heat generated by power transistors is transmitted to another transistor through the heat conductive insulator 3. At this time, the heat conductive insulator 3 is formed by evaporation in sufficient thickness so that the heat generated in the semiconductor device may be sufficiently dissipated. Accordingly, even if the differential pair transistors are formed, both thermal and electrical characteristic unbalance can be avoided.

4. 发明专利

JPH11345925A SEMICONDUCTOR DEVICE PROVIDED WITH STRUCTURE FOR FITTING RADIATING PLATE 失效
公开(公告)号：JPH11345925A
公开(公告)日：1999-12-14
申请号：JP13609899
申请日：1999-05-17
申请人： ROHM CO LTD
发明人： FURUNO TOMOMI , INOUE KOICHI
IPC分类号： H01L23/40
摘要： PROBLEM TO BE SOLVED: To shorten working step and improve manufacturing efficiency by forming an engaging part which can be inserted into and engaged with a hole provided in an external radiating plate in a manner to be projected from the heat radiating part, and bringing it into contact with the heat radiating part and a resin formation part other than the heat radiating part in a state where the radiating plate is engaged with the engaging part. SOLUTION: An engaging pin 15 is comprised of a head 15a and a cylinder 15b which is smaller than the head 15a, and the entirely wedge-shaped head 15a is divided into four to form clearances 15c, and further it is made of flexible material so as to change the size of the clearance 15c freely. When the head 15a is inserted into a hole 4a, the clearance 15c becomes small, and when it is projected from the backside of the radiating plate 4, the size thereof is restored to the original state and the engagement is completed. Thus, the engaging pin 15 formed in a resin formation body 12 and the hole 4a formed on the radiating plate 4 can be engaged with each other, so that the radiating plate 4 can be fitted to a semiconductor device 11 through one action.

5. 发明专利

JPH08125079A HEAT SINK MOUNTING STRUCTURE FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08125079A
公开(公告)日：1996-05-17
申请号：JP25996394
申请日：1994-10-25
申请人： ROHM CO LTD
发明人： FURUNO TOMOMI , INOUE KOICHI
IPC分类号： H01L23/28 , H01L23/40 , H01L23/04
摘要： PURPOSE: To provide the heat sink mounting structure for a semiconductor device in which the operating steps can be, the manufacturing efficiency is improved, and the manufacturing cost can be curtailed. CONSTITUTION: A mounting structure mounts a heat sink 4 at a semiconductor device 11 in which a frame 3 is molded with a resin molded form 12, integrally forms a connecting pin 15 at the device 11, and integrally forms a hole 4a engaged with the pin 15 with the heat sink 4.

6. 发明专利

JPH1013161A PROTECTING CIRCUIT FOR OUTPUT TRANSISTOR 失效
公开(公告)号：JPH1013161A
公开(公告)日：1998-01-16
申请号：JP16761496
申请日：1996-06-27
申请人： ROHM CO LTD
发明人： FURUNO TOMOMI
IPC分类号： H03F1/52 , H03K17/082
摘要： PROBLEM TO BE SOLVED: To drastically reduce load current, even when an output voltage is cramped by means of a low voltage owing to abnormality in a load circuit by reducing the conductive biases of an output transistor and a monitor transistor when the voltage generated at a prescribed point becomes more than a prescribed level. SOLUTION: When output current I0 increases, current I flowing in the output transistor Q1 increases, and current I/n flowing in the monitor transistor Q2 also increases. Therefore, the voltage generated at a g-point becomes more than the threshold values of the transistor Q3 and Q4, so as to turn on the transistors Q3 and Q4. Since current I is permitted to flow from the k-point of a first comparator 1 to the transistor A3 by the turning-on of the transistor Q3, the collector current I1 of the transistor T8 is decreased. The conductive degree of the transistors Q1 and Q2 is lowered by the decrease in current I1 , and respective currents I and I/n are reduced. Thus, even when current I is made to flow, its rush current is quickly restricted.

7. 发明专利

JPH07297307A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND LEAD FRAME 失效
公开(公告)号：JPH07297307A
公开(公告)日：1995-11-10
申请号：JP9096494
申请日：1994-04-28
申请人： ROHM CO LTD
发明人： NAGANUMA KEISUKE , OTANI KENJI , INOUE KOICHI , YAMAZAKI KOICHI , FURUNO TOMOMI
IPC分类号： H01L23/12 , H01L21/52 , H01L23/02 , H01L23/495
摘要： PURPOSE:To enable manufacture of a semiconductor integrated circuit device having plural semiconductor chips provided through one die bonding. CONSTITUTION:A control section T1 and a power section T2 having a power element associated with the control section T1 are formed on a semiconductor chip T. A recessed section C1 is formed between the control section T1 and the power section T2. A projected section C2 with a height oh greater than the depth of the recessed section C1 is formed on a die pad D1. Die bonding is carried out by applying a force onto the recessed section C1 by the projected section C2 to divide the semiconductor chip T into a chip part TA of the control section T1 and a chip part TB of the power section T2, and bonding the semiconductor chip T onto the die pad D1.

8. 发明专利

JPH07273282A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07273282A
公开(公告)日：1995-10-20
申请号：JP6049994
申请日：1994-03-30
申请人： ROHM CO LTD
发明人： FURUNO TOMOMI , OTANI KENJI , INOUE KOICHI , YAMAZAKI KOICHI , NAGANUMA KEISUKE
IPC分类号： H01L21/822 , H01L27/04
摘要： PURPOSE:To provide a semiconductor device in which an arrangement is not limited, whose cost can be lowered and whose reliability is high. CONSTITUTION:Heat-generating semiconductor elements (a first PNP transistor 20 and a second PNP transistor 30) which generate heat in their operation and control parts (a resistor 40 and an NPN transistor 50) which control them are formed inside a substrate 1. After that, a heat isolation groove 60 is formed between the first PNP transistor 20 and the resistor 40 by a laser cutter. A substance whose heat conductivity is low is filled into the heat isolation groove 60 which has been formed. Thereby, heat which is generated from the first PNP transistor 20 is not conducted to the resistor 40, and a change in a control characteristic due to heat is not generated between the resistor 40 and the NPN transistor 50. The heat-generating semiconductor elements and the control parts are isolated thermally from each other, it is not required to arrange the heat-generating semiconductor elements and the control parts by taking their positions into consideration, and it is not required to install the heat-generating semiconductor elements and the control parts on separate substrates.

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