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1. 发明专利

JP2014081860A Sensor network system 有权
标题翻译：传感器网络系统
公开(公告)号：JP2014081860A
公开(公告)日：2014-05-08
申请号：JP2012230461
申请日：2012-10-18
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所 , Micromachine Center , 一般財団法人マイクロマシンセンター
发明人： OKADA HIRONAO , ITO HISAHIRO , ARAKAWA MASAO , SAKAMIZU TOSHIO
IPC分类号： G08C15/00 , G08C15/06 , G08C17/00 , H04M11/00 , H04Q9/00
CPC分类号： H04W88/18 , G08C15/00 , G08C15/06 , H04M11/00 , H04Q9/00 , H04Q2209/10 , H04Q2209/40 , H04Q2209/82 , H04Q2209/823 , H04Q2209/88 , H04W52/0251 , H04W64/00 , H04W84/18 , Y02D70/00 , Y02D70/164
摘要： PROBLEM TO BE SOLVED: To achieve a sensor network system capable of monitoring a detail environmental change corresponding to a difference in position in a monitoring object area.SOLUTION: A sensor network system includes: a plurality of sensor terminals arranged in a predetermined area; and a monitoring center device for collecting sensing data transmitted by radio from each of the plurality of sensor terminals. Each of the sensor terminals intermittently transmits by radio a transmission signal constituted of the identification information of a sensor and the latest sensing data of the sensor. The monitoring center device includes a function for acquiring the position information of the sensor terminals in the predetermined area, and stores each of the sensing data from the sensor terminals as time series data in association with the information of the acquisition point of time, and visualizes and presents the time series change of environmental elements in the predetermined area on the basis of the position information of the sensor terminals and the time series data of the stored sensing data.
摘要翻译：要解决的问题：实现能够监测与监视对象区域中的位置差异相对应的细节环境变化的传感器网络系统。解决方案：传感器网络系统包括：布置在预定区域中的多个传感器端子; 以及监视中心装置，用于收集从所述多个传感器终端中的每一个发送的无线电传感数据。每个传感器终端通过无线电间歇地发送由传感器的识别信息和传感器的最新感测数据构成的传输信号。监视中心装置包括用于获取预定区域中的传感器端子的位置信息的功能，并且将来自传感器端子的每个感测数据作为与获取时间点的信息相关联的时间序列数据存储，并且可视化并根据传感器端子的位置信息和所存储的感测数据的时间序列数据，呈现预定区域中的环境元素的时间序列变化。

2. 发明专利

JP2010232479A Organic optoelectric transducer 审中-公开
标题翻译：有机光电传感器
公开(公告)号：JP2010232479A
公开(公告)日：2010-10-14
申请号：JP2009079320
申请日：2009-03-27
申请人： Kyushu Univ , Lintec Corp , Micromachine Center , Panasonic Electric Works Co Ltd , パナソニック電工株式会社 , リンテック株式会社 , 国立大学法人九州大学 , 財団法人マイクロマシンセンター
发明人： NAKADA MANABU , ADACHI CHIHAYA , YAHIRO MASAYUKI , NAKANOYA HAJIME , NAKADA YASUKAZU
IPC分类号： H01L51/42 , H01L51/50
CPC分类号： Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide an organic optoelectric transducer capable of improving the conversion efficiency in photoelectric conversion layers. SOLUTION: The organic optoelectric transducer includes a substrate 1, a first electrode 2 formed at one surface side of the substrate 1; a second electrode 4 that is at a side opposite to the side of the substrate 1 in the first electrode 2 and opposes the first electrode 2; a photoelectric conversion layer 3, provided between the first and second electrodes 2, 4; and a surface protection layer 7; formed to cover the exposed surfaces of the first electrode 2, the photoelectric conversion layer 3, and the second electrode 4 on one surface side of the substrate 1. The photoelectric conversion layer 3 includes a number of organic nanostructures 5, provided at the side of the photoelectric conversion layer 3 in the first electrode 2, and a functional layer 6, in which the respective organic nanostructures 5 are embedded and which is formed from an organic semiconductor material, different from that of the organic nanostructure 5. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高光电转换层的转换效率的有机光电传感器。有机光电传感器包括基板1，形成在基板1的一个表面侧的第一电极2; 在第一电极2的与基板1侧相反的一侧的第二电极4，与第一电极2相对; 设置在第一和第二电极2,4之间的光电转换层3; 和表面保护层7; 形成为覆盖基板1的一个表面侧上的第一电极2，光电转换层3和第二电极4的暴露表面。光电转换层3包括多个有机纳米结构5，其设置在第一电极2中的光电转换层3和其中嵌入有机纳米结构5并且由有机半导体材料形成的与有机纳米结构5不同的功能层6。版权所有：（C）2011，JPO＆INPIT

3. 发明专利

JP2010232533A Etching method 审中-公开
标题翻译：蚀刻方法
公开(公告)号：JP2010232533A
公开(公告)日：2010-10-14
申请号：JP2009080209
申请日：2009-03-27
申请人： Kyushu Univ , Lintec Corp , Micromachine Center , Panasonic Electric Works Co Ltd , パナソニック電工株式会社 , リンテック株式会社 , 国立大学法人九州大学 , 財団法人マイクロマシンセンター
发明人： HIRAIDE MASAYA , ADACHI CHIHAYA , YAHIRO MASAYUKI , SAGAWA SEIJI , KUBOTA TOMOHIRO , TSURU NORIHIKO , NAKADA MANABU , NAKADA YASUKAZU
IPC分类号： H01L21/3065 , H01L21/302 , H01L51/05 , H01L51/40 , H01L51/42 , H01L51/50 , H05B33/10
CPC分类号： Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide an etching method for etching an organic semiconductor compound by a neutral particle beam without damaging the object compared with a plasma treatment.
SOLUTION: In the etching method, a substrate 26 on which a thin film 28 of organic semiconductor is formed is irradiated with the neutral particle beam for etching. It is desirable that the neutral particle beam contains oxygen, and that the organic semiconductor is one of acenes, bisstyrylbenzene derivatives, oligothiophene derivatives, phthalocyanines, perylene derivatives, fullerene, and fullerene derivatives.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于通过中性粒子束蚀刻有机半导体化合物而不损坏物体的蚀刻方法与等离子体处理相比。解决方案：在蚀刻方法中，用形成有机半导体薄膜28的基板26照射用于蚀刻的中性粒子束。期望中性粒子束含有氧，有机半导体是α-烯烃，双苯乙烯基苯衍生物，低聚噻吩衍生物，酞菁，苝衍生物，富勒烯和富勒烯衍生物之一。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010232480A Organic transistor 有权
标题翻译：有机晶体管
公开(公告)号：JP2010232480A
公开(公告)日：2010-10-14
申请号：JP2009079321
申请日：2009-03-27
申请人： Kyushu Univ , Lintec Corp , Micromachine Center , Panasonic Electric Works Co Ltd , パナソニック電工株式会社 , リンテック株式会社 , 国立大学法人九州大学 , 財団法人マイクロマシンセンター
发明人： NAKADA MANABU , ADACHI CHIHAYA , YAHIRO MASAYUKI , NAKANOYA HAJIME , NAKADA YASUKAZU
IPC分类号： H01L29/786 , H01L21/336 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide an organic transistor capable of improving the crystallinity of organic semiconductor layers.
SOLUTION: The organic transistor includes a gate electrode 2 formed at one surface side of a substrate 1; a gate insulation film 3 formed on the gate electrode 2; a source electrode 4 and a drain electrode 5, formed separately at a surface side opposite to the side of the gate electrode 2 in the gate insulating film 3; and an organic semiconductor layer 7, of which one portion is formed in a region between the source electrode 4 and the drain electrode 5 on the surface side of the gate insulation film 3. Also, a self-organized monomolecular film 8 is provided between the organic semiconductor layer 7 and the gate insulating film 3. The organic semiconductor layer 7 includes an organic semiconductor thin film, formed with a number of organic nanostructures (organic nanodots) 6 formed in a region between the source electrode 4 and the drain electrode 5, as a core on a surface opposite to the side of the gate insulating film 3 in the self-organized monomolecular film 8.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供能够提高有机半导体层的结晶性的有机晶体管。解决方案：有机晶体管包括形成在衬底1的一个表面侧的栅电极2; 形成在栅电极2上的栅极绝缘膜3; 在栅极绝缘膜3中与栅电极2的相反侧的表面侧分别形成的源电极4和漏电极5; 以及在栅极绝缘膜3的表面侧的源极电极4和漏极电极5之间的区域中形成有一部分的有机半导体层7.另外，在有机半导体层7之间设置自组织单分子膜8 有机半导体层7和栅极绝缘膜3.有机半导体层7包括形成在源电极4和漏电极5之间的区域中的多个有机纳米结构（有机纳米点）6的有机半导体薄膜，作为在自组织单分子膜8中的与栅极绝缘膜3的侧面相反的表面上的核心。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010228066A Production method of nano-dot 审中-公开
标题翻译：纳米生产方法
公开(公告)号：JP2010228066A
公开(公告)日：2010-10-14
申请号：JP2009080247
申请日：2009-03-27
申请人： Kyushu Univ , Lintec Corp , Micromachine Center , Panasonic Electric Works Co Ltd , パナソニック電工株式会社 , リンテック株式会社 , 国立大学法人九州大学 , 財団法人マイクロマシンセンター
发明人： HIRAIDE MASAYA , ADACHI CHIHAYA , YAHIRO MASAYUKI , SAGAWA SEIJI , KUBOTA TOMOHIRO , TSURU NORIHIKO , NAKADA MANABU , NAKADA YASUKAZU
IPC分类号： B82B3/00 , H01L51/05 , H01L51/40 , H01L51/42
CPC分类号： Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide a production method of nano-dots, by which nano-dots can be efficiently produced in an organic semiconductor.
SOLUTION: This invention relates to the production method of nano-dots, in which nano-dots having an average major diameter of 5 to 800 nm is produced by irradiating a thin film made of an organic semiconductor with a neutral particle beam, wherein the neutral particle beam is preferably made using oxygen, and the organic semiconductor is preferably anyone of acenes, bis(styryl)benzene derivatives, oligothiophene derivatives, phthalocyanines, perylene derivatives, and fullerenes or fullerene derivatives.
COPYRIGHT: (C)2011,JPO&INPIT

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