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1. 发明专利

JPH10256995A OPTICAL LINE MONITOR SYSTEM AND TERMINAL STATION 失效
公开(公告)号：JPH10256995A
公开(公告)日：1998-09-25
申请号：JP5296097
申请日：1997-03-07
申请人： KOKUSAI DENSHIN DENWA CO LTD , K D D KAITEI CABLE SYST KK
发明人： HORIUCHI YUKIO , TANAKA HIDEAKI , GOTO KOJI , YAMAMOTO SHU , AKIBA SHIGEYUKI
IPC分类号： H04B10/07 , H04B3/46 , H04B10/035 , H04B10/077 , H04B17/00 , H04B10/08
摘要： PROBLEM TO BE SOLVED: To make monitor light pass through a branch station. SOLUTION: A trunk station 10 is connected to a branch station 14 through an optical fiber line pair 18, and the branch station 14 is connected to another branch station through an optical fiber line pair 20. In the branch station 14, a wavelength demultiplexing element 42a demultiplexes wavelengths of transmission light on an up line from the trunk station 10. An add/drop element 44a drops an optical signal to the branch station 14 and adds an optical signal to be sent. A wavelength multiplexing element 46a multiplexes wavelength light, which have wavelengths other than that of signal light from the add/drop element 44a and are demultiplexed by the wavelength demultiplexing element 42a, with signal light from the element 44a and outputs the resultant light to the up line. A wavelength demultiplexing element 42b, an add/drop element 44b, and a wavelength multiplexing element 46b act on a down line in the same manner.

2. 发明专利

JPH09133901A OPTICAL PULSE GENERATOR 失效
公开(公告)号：JPH09133901A
公开(公告)日：1997-05-20
申请号：JP31371195
申请日：1995-11-08
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： TANAKA HIDEAKI , MATSUSHIMA YUICHI
IPC分类号： G02F1/015
摘要： PROBLEM TO BE SOLVED: To make it possible to increase the light intensity of the peaks of light pulses and to lower the ratio of the pulse width to repetitive synchronization by providing the optical pulse generator with a semiconductor laser, semiconductor electric absorption type optical modulator, DC voltage generator, sine wave voltage generator, delay circuit and sine wave voltage synthesizing means. SOLUTION: The output light of specified intensity from the single wavelength laser 1 is inputted to the semiconductor electric absorption type optical modulator 2. A DC voltage generator 3 applies a DC voltage of a backward direction to the semiconductor electric absorption type optical modulator 2. The sine wave voltage generator 4 generates the first sine wave-like voltage for allowing the optical modulator 2 to perform modulation operation. The sine wave voltage generator 5 generates the second sine wave-like voltage having the frequency component of N (N is an integer of >=2) times the sine wave-like voltage for driving the optical modulator 2. A delay is applied to the first sine wave-like voltage by a first sine wave-like voltage delay circuit 6 in such a manner as to attain the coincidence of the time when the first and second sine wave-like voltages swing to the max. extent to the positive side, by which the first and second sine wave-like voltages are synthesized.

3. 发明专利

JPH058878B2 失效
公开(公告)号：JPH058878B2
公开(公告)日：1993-02-03
申请号：JP1725387
申请日：1987-01-29
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： AKIBA SHIGEYUKI , SUZUKI MASATOSHI , TANAKA HIDEAKI , KUSHIRO YUKITOSHI
IPC分类号： H01L27/15 , G02F1/015 , H01S5/00 , H01S5/026 , H01S5/042

4. 发明专利

JPH01231389A MANUFACTURE OF OPTICAL SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01231389A
公开(公告)日：1989-09-14
申请号：JP5624788
申请日：1988-03-11
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： TANAKA HIDEAKI , AKIBA SHIGEYUKI , SUZUKI MASATOSHI , UKO KATSUYUKI
IPC分类号： G02B6/122 , G02B6/12 , G02B6/13 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/042
摘要： PURPOSE:To reduce dark current when using as a light modulator, and also a threshold current when using as a laser, by crystal-growing a high carrier density semiconductor layer on an upper section of a buried layer and then diffusing impurity dopant of the high carrier density semiconductor layer to the buried layer. CONSTITUTION:A p-type InP layer 14, an InGaAsP optical waveguide layer 13 and an n-type InP layer 12 are etched in a mesa shape using an SiO2 film, etc., as a mask, and then the SiO2 film is eliminated. A low carrier density n-type InP layer 15 is crystal-grown entirely over a wafer by vapor growth and then a zinc-doped InP layer 16 is grown as a high carrier density semiconductor. The low carrier density n-type InP layer 15 is grown as shown by a broken line. If temperature and time are adjusted by vapor growth method, zinc of impurity dopant of the high carrier density p-type InP layer 16 diffuses to the low carrier density n-type InP layer 15 and attains to the upper part of a p-type InP layer 14 of the second clad layer 14 which is the top of the mesa as shown by a full line, and p-type region is thereby connected. Since the buried layer 15 is buried after an etching mask is eliminated, introduction of impurity and lattice defect can be avoided.

5. 发明专利

JPH01217418A OPTICAL MODULATION ELEMENT 失效
公开(公告)号：JPH01217418A
公开(公告)日：1989-08-31
申请号：JP4220088
申请日：1988-02-26
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： SUZUKI MASATOSHI , AKIBA SHIGEYUKI , TANAKA HIDEAKI , UKO KATSUYUKI
IPC分类号： G02F1/025 , G02F1/015
摘要： PURPOSE:To attain rapid modulation at a low voltage even when the intensity of incident light is increased by gradually increasing an absorbing factor from the incident end face of an optical waveguide to its projecting end face and almost fixing the number of absorbing carriers per unit length in a light advancing direction. CONSTITUTION:Forbidden width, layer thickness and stripe width are constituted so that the absorbing factor is reduced on the incident end side with large optical intensity and it is reduced on the projecting end face and the title optical modulating element is constituted so that the number of absorbing carriers per unit length is uniformed. Consequently, the high performance optical modulating element capable of executing rapid optical modulation at a low voltage without generating locally excess carriers even when the optical intensity is increased and without generating the increment of a modulation voltage or the reduction of the band width due to a space charge effect can be attained.

6. 发明专利

JPS644089A INFRARED SEMICONDUCTOR LASER 失效
公开(公告)号：JPS644089A
公开(公告)日：1989-01-09
申请号：JP15778987
申请日：1987-06-26
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： SUZUKI MASATOSHI , KUSHIRO YUKITOSHI , UKO KATSUYUKI , AKIBA SHIGEYUKI , MATSUSHIMA YUICHI , TANAKA HIDEAKI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain an infrared semiconductor laser having a high inner quantum efficiency by making part of the optical waveguide layer an active region. CONSTITUTION:On a N -InP substrate 1, an InGaAsP optical waveguide layer 2 is stacked in which the electrical conductivity is varying from semi-insulation to P-type. Further, a P -InP upper clad layer 3 and a P -InGaAsP contact layer 4 are constructed thereon. Positive holes which have continuously been injected from the P-type InP layer 3 proceed to the boundary of the substrate 1, but they combine with electrons at the hetero junction plane and emit a light. The light emission wavelength is two times the wavelength of the forbidden band since the InGaAsP at the hetero interface is an intrinsic semiconductor. In this structure, the carrier injection efficiency is high, and by changing the composition of the intrinsic semiconductor InGaAsP, the oscillation wavelength can be changed from 2mum to about 3.35mum.

7. 发明专利

JPS63186488A SEMICONDUCTOR INTEGRATED LIGHT EMITTING DEVICE 失效
公开(公告)号：JPS63186488A
公开(公告)日：1988-08-02
申请号：JP1725287
申请日：1987-01-29
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： SUZUKI MASATOSHI , AKIBA SHIGEYUKI , TANAKA HIDEAKI , KUSHIRO YUKITOSHI
IPC分类号： H01L27/15 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/125
摘要： PURPOSE:To obtain a semiconductor integrated light emitting device enabling light from light emitting waveguide paths including a light emitting layer to efficiently be guided to an external waveguide path by providing a stacking in the vicinity of the place wherein the light emitting and waveguide paths including the light emitting layer and the external waveguide path directly connected thereto are directly connected. CONSTITUTION:In a semiconductor integrated light emitting device having light emitting waveguide paths 2, 3 including a light emitting layer 3 and an external waveguide path 4 that is directly connected to the light emitting waveguide paths 2, 3, a stacking is provided in the vicinity of the place where the light emitting waveguide paths 2, 3 and the external waveguide path 4 are directly connected. For instance, after performing the crystal growth of an n-InGaAsP waveguide layer 2, an InGaAsP light emitting layer 3 and a p-InP layer 5 on a n -InP substrate 1, the region for forming the external waveguide path is etched away, and a n -InGaAsP waveguide path layer 4,, a n -InP layer 6 and the p-InP layer 5 are grown on the whole surface. Then, after etching away the grown layers 4, 6, 5 on the light emitting waveguide paths 2, 3, the p-InP layer 5 and a p-InGaAsP cap layer 7 are grown on the whole.

8. 发明专利

JPH114194A OPTICAL TRANSMISSION LINE MONITOR DEVICE AND RECEIVING END OFFICE 失效
公开(公告)号：JPH114194A
公开(公告)日：1999-01-06
申请号：JP15362297
申请日：1997-06-11
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： TANAKA HIDEAKI , GOTO KOJI
IPC分类号： H04B3/46 , H04B10/03 , H04B10/07 , H04B10/077 , H04B10/079 , H04B10/25 , H04B10/2519 , H04B10/2525 , H04B10/2581 , H04B10/40 , H04B10/43 , H04B10/50 , H04B10/60 , H04B10/66 , H04B10/08 , H04B10/04 , H04B10/06 , H04B10/12 , H04B10/13 , H04B10/135 , H04B10/14 , H04B10/26 , H04B10/28
摘要： PROBLEM TO BE SOLVED: To early detect the faults of an optical transmission system. SOLUTION: In an optical unit 46 of a receiving terminal 44, the light inputted from an optical transmission line 42 is inputted to an optical circulator 56 via an optical amplifier 50, a wavelength dispersion compensation fiber 52 and an optical amplifier 54. An optical fiber grating 58 selectively reflects the monitoring wavelength λsp that is shorter than the optical signal wavelength. The wavelength λsp included in the input light is reflected by the grating 58 and inputted to a photodetector 60 via the circulator 56. The output of the photodetector 60 is amplified by an amplifier 62 and applied to a comparator 64. The comparator 64 compares the output of the amplifier 62 with threshold Vth. Then an H signal (alarm ON) and an L signal (alarm OFF) are outputted when the output of the amplifier 62 is higher than the Vth an vice versa respectively. The threshold Vth is set hither than the optical intensity of component of the wavelength λsp set in a normal state of the line 42 and also lower than the said optical intensity set in a faulty state of the line 42.

9. 发明专利

JPH05343816A 失效
公开(公告)号：JPH05343816A
公开(公告)日：1993-12-24
申请号：JP17591092
申请日：1992-06-11
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： TANAKA HIDEAKI , NAGAO YASUYUKI , NISHIMURA KOUSUKE , SUZUKI MASATOSHI , MATSUSHIMA YUICHI
IPC分类号： H01L33/14 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PURPOSE:To reduce the leakage current on the growth interface of an optical semiconductor and to make the operating temperature range of a semiconductor element wide by a method wherein an exposed part is exposed to a gas which contains at least one kind out of a sulfur compound and a selenium compound, a III-V compound semiconductor is crystal-grown in the exposed part and the exposed part is covered. CONSTITUTION:A substrate 1 is heated in a gas atmosphere which contains a sulfur compound or a selenium compound whose purity is high; the sulfur compound or the selenium compound is pyrolyzed; high-purity sulfur or selenium is applied to a junction interface 20. Semi-insulating InP 5 is grown selectively, by a vapor growth method, only in a region which is not covered with a silicon dioxide film 11. At this time, the junction interface 20 is covered with the semi- insulating InP 5. Thereby, an interface level by impurities is hard to form, the leakage current in the growth interface of an optical semiconductor is reduced and the operating temperature range of the title semiconductor element can be made wide.

10. 发明专利

JPH02212804A OPTICAL SEMICONDUCTOR ELEMENT AND PRODUCTION THEREOF 失效
公开(公告)号：JPH02212804A
公开(公告)日：1990-08-24
申请号：JP3289189
申请日：1989-02-14
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： TANAKA HIDEAKI , SUZUKI MASATOSHI , MATSUSHIMA YUICHI
IPC分类号： G02B6/122 , G02B6/12 , G02B6/13 , G02F1/025 , H01L27/15 , H01S5/00
摘要： PURPOSE:To lower the oscillation threshold by disposing a semi-insulating semiconductor having the refractive index smaller than the refractive index of a semiconductor layer constituting a light guide layer over the entire part on the outer periphery of the light guide. CONSTITUTION:An n type InP layer 12 which is the 1st clad layer forming the light guide, an InGaAsP modulating waveguide layer 13, and a p type InP layer 14 which is the 2nd clad layer are embedded on an n type InP substrate 11 by iron-coped semi-insulating InP 15 over the entire part of the outer periphery to constitute this element. A p type InGaAsP contact layer 16 and the p type InP layer 14 in the upper part of the clad layer are connected by a zinc-diffused layer 18 in the p type region. Current narrowing is, therefore, sufficiently executed in a transverse direction by rereading the InGaAsP light guide layer 13 with a light emitting layer and supplying a positive power source to a p side InGaAsP 19 and a negative power source to an n side InGaAsP 20, by which the flush type semiconductor eraser of the low oscillation threshold is obtd.

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