专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH09326528A SHORT OPTICAL PULSE WAVEFORM SHAPING DEVICE 失效
公开(公告)号：JPH09326528A
公开(公告)日：1997-12-16
申请号：JP16366996
申请日：1996-06-05
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： USAMI MASASHI , TSURUSAWA MUNEFUMI , MATSUSHIMA YUICHI
IPC分类号： H01S5/00 , H01S3/00 , H01S5/06 , H01S5/183 , H01S5/50 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a short optical pulse waveform shaping device in which an optical pulse signal having a wavelength shorter than that of an oscillation light of a semiconductor laser device is allowed to enter the semiconductor laser device and an optical pulse signal outgoing from the semiconductor laser device is extracted, thereby setting an absorption recovery time to specific seconds which is much shorter than the life of a carrier. SOLUTION: A current of 8mA which is slightly larger than a threshold current is preliminarily flowed in a semiconductor laser device 11 by a D/C power source 12, thereby oscillating the semiconductor laser device 11. An input signal pulse light 1 is allowed to enter the semiconductor laser device 11 through an isolator 13 and a round-ended fiber 14. Since the laser oscillation light and the signal pulse light are multiplexed in an output light 2 from the semiconductor laser device 11, an output signal pulse light 3 is extracted by a band-pass filter 16 which passes only the signal pulse light 3. Consequently, an absorption recovery time is shortened to about 100 femtoseconds which is much shorter than the life of the carrier.

2. 发明专利

JPH09218316A OPTICAL ADD/DROP MULTIPLEX ELEMENT 失效
公开(公告)号：JPH09218316A
公开(公告)日：1997-08-19
申请号：JP13381396
申请日：1996-05-28
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： HOTTA MASAKATSU , TANAKA SHINSUKE , MATSUSHIMA YUICHI , YAMAMOTO TAKAYA
IPC分类号： G02B6/12 , G02B6/34 , G02F1/01 , G02F1/025 , G02F1/313 , H04B10/213 , H04Q11/00
摘要： PROBLEM TO BE SOLVED: To provide an optical add/drop multiple element which can take out or take in the light signal of arbitrary wavelength and has narrow-band wavelength selection characteristics and is small in size and high in reliability. SOLUTION: A light signal, having (m) wavelengths λ1 -λm , which is inserted from an input port 11 is guided to the filter area of a coupling part 19 by a lower light guide 2, a diffraction grating 10 reflects only a light signal of specific wavelength λk and drops it from a drop port 12, and light signals of other wavelengths pass through the filter area and are outputted from a through port 13. Further, when a light signal of wavelength λk from an add port 14 is inputted, the light signal is reflected by the diffraction grating 10 and added to transmitted light signals of other channels from the through port 13 and outputted together.

3. 发明专利

JPH06265945A OPTICAL REPEATER 失效
公开(公告)号：JPH06265945A
公开(公告)日：1994-09-22
申请号：JP7737893
申请日：1993-03-12
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： UKO KATSUYUKI , HOTTA MASAKATSU , MATSUSHIMA YUICHI
IPC分类号： G02B6/122 , G02B6/12 , G02F1/35 , H04B10/25 , H04B10/2507 , H04B10/18
摘要： PURPOSE:To provide an optical repeater and an element which have 2R and false 3R functions by using an optical nonlinear material which emits light having a new optical frequency by incidence of plural light beams. CONSTITUTION:An optical nonlinear materials 1 consisting of a semiconductor optical amplifier or an optical fiber, an optical resonator filter 2 which shuts in only light having a specific optical frequency and has the resonance frequency interval set to the value which is approximately equal to integer-fold or (1/(an integer))-fold transmission speed, an optical. modulator 3, and optical filters 4 and 5 are provided. A clock signal which is different from the transmission signal by the optical frequency but has the same repeat frequency as the transmission speed is generated by this optical nonlinear material 1, and the transmission signal is modulated by this clock signal, thereby constituting the optical repeater to have simple and extrahigh-speed optical repeating functions. Since the clock signal is extracted at an extrahigh speed, repeating functions such as timing reproducing, regenerative amplification, and waveform reproducing using this signal are realized without sacrificing the transmission speed.

4. 发明专利

JPH06177476A OPTICAL PULSE GENERATOR 失效
公开(公告)号：JPH06177476A
公开(公告)日：1994-06-24
申请号：JP34969492
申请日：1992-12-02
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： TANAKA HIDEAKI , SUZUKI MASATOSHI , MATSUSHIMA YUICHI
IPC分类号： H01S5/06 , H01S5/026 , H01S3/103
摘要： PURPOSE:To enable a transform limited pulse to be generated by setting a large isolation resistance value between a semiconductor laser and a semiconductor electricity absorbing type optical modulator in such a way that an optical pulse generated by a semiconductor electricity absorbing type optical modulator will have a spectrum equivalent to Fourier transform of its envelope waveform. CONSTITUTION:In an optical pulse generator, a lambda/4 shift distribution feedback type DFB laser 1 oscillating in a single wave length and an InGaAsP electricity absorbing type optical modulator 2 are integrated on an n type InP substrate 11. To isolate electrically the DFB laser 1 from the optical modulator 2, a semiconductor InP 12 is arranged between these two units. However, since no complete insulation is obtained, in terms of electric circuitry, it is equivalent to an isolation resistance 13 being connected between the DFB laser 1 and the optical modulator 2. A transform limited optical pulse can be generated by making the isolation resistance 13, say, over 400KOMEGA to suppress a fluctuation of a semiconductor laser drive current triggered as the modulator 2 is driven.

5. 发明专利

JPH05341242A 失效
公开(公告)号：JPH05341242A
公开(公告)日：1993-12-24
申请号：JP17591192
申请日：1992-06-11
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： TANAKA HIDEAKI , SUZUKI MASATOSHI , MATSUSHIMA YUICHI
IPC分类号： G02B6/12 , G02F1/015 , G02F1/017 , G02F1/025
摘要： PURPOSE:To provide the optical modulating element by which a capacitance of the element becomes small, and also, the p-n junction is not exposed to air by providing a waveguide area on both sides of a modulating area. CONSTITUTION:The optical modulating element is constituted so that on an (n) side electrode 10, a substrate 1, an (n) type clad layer 2 and a modulating optical waveguide layer 3 are laminated, a modulating area is positioned in the center along the advance direction of light of the modulating optical waveguide layer 3 two waveguide areas are positioned before and behind it, respectively, an undoped layer 12, a (p) type clad layer 13 and a (p) side electrode 15 are laminated on the modulating optical waveguide layer concerned 3 which becomes the modulating area, and a semi-insulating semiconductor 7 is laminated on the modulating optical waveguide layer 3 which becomes two waveguide areas.

6. 发明专利

JPH03257888A SURFACE EMITTING SEMICONDUCTOR LASER 失效
公开(公告)号：JPH03257888A
公开(公告)日：1991-11-18
申请号：JP5378490
申请日：1990-03-07
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： UKO KATSUYUKI , SAKAI KAZUO , KUSHIRO YUKITOSHI , MATSUSHIMA YUICHI , SUZUKI MASATOSHI
IPC分类号： H01S5/00 , H01S5/42
摘要： PURPOSE:To get a semiconductor laser of high output and favorable in emissive pattern by providing a diffraction grating, wherein circular irregularities are made coaxially for taking out of optical output, at nearly the center of laser oscillators. CONSTITUTION:A ring-shaped diffraction grating 11 is provided at the center, and four pieces of laser-stripe-shaped laser oscillators 20, 21, 22, and 23 are provided to cross the ring-shaped diffraction grating 11. Since the output of each laser oscillator is emitted upward only from the ring-shaped diffraction grating 11, high output proportionate to the number of laser oscillators can be gotten from simple opening. Furthermore, since it is the emission by the ring-shaped diffraction grating, the emissive pattern is excellent in unimodel properties, and emissive angle is also small. The widths of the laser oscillators 20, 21, 22, and 23 are 1-2mum for lateral mode control, and the circumference is embedded in, for example, semiinsulating InP 12 so as to remove needless leak currents.

7. 发明专利

JPH01289287A SEMICONDUCTOR OPTICAL AMPLIFICATION ELEMENT 失效
公开(公告)号：JPH01289287A
公开(公告)日：1989-11-21
申请号：JP11829888
申请日：1988-05-17
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： UKO KATSUYUKI , MATSUSHIMA YUICHI , SAKAI KAZUO , AKIBA SHIGEYUKI
IPC分类号： G02F1/35 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/30 , H01L33/44 , H01L33/58 , H01S5/00 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/343 , H01S5/50
摘要： PURPOSE:To obtain a semiconductor optical amplification element whose polarization plane dependence is small by a method wherein a beam is incident from a plane direction of an active Iayer, is reflected in a multiple manner between one pair of reflecting surfaces formed so as to sandwich the active layer and is amplified. CONSTITUTION:An incident beam Pin is incident at an angle of thetao from a region where an antireflection film 10 has been formed and it repeats multiple reflection in a zigzag manner between light reflecting surfaces 7, 9 which function also as electrodes. At the same time, at each reflecting operation the beam passes through an active iayer having a gain by injection of a carrier. As a result, it is amplified and is radiated as a radiation beam Pout from a region where an antireflection film 10' has been formed. During this process, the propagating beam passes through a plane of the active layer 4 nearly vertically when the incidence angle thetao is selected to be small to a certain extent. By this setup, it is possible to nearly eliminate the polarization plane dependence on an amplification factor.

8. 发明专利

JPS6424482A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS6424482A
公开(公告)日：1989-01-26
申请号：JP17989787
申请日：1987-07-21
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： UKO KATSUYUKI , SAKAI KAZUO , MATSUSHIMA YUICHI
IPC分类号： G02B6/12 , H01S5/00 , H01S5/0625 , H01S5/10 , H01S5/125
摘要： PURPOSE:To select only one resonant wavelength so as to make a laser operate in a narrow oscillating laser ray with a single wavelength by a method wherein a Mach-Zehnder interference type waveguide path is provided in a semiconductor laser resonator. CONSTITUTION:Carriers are injected into a light emitting region A which has an optical gain. A Mach-Zehnder interference type waveguide path region B is ramified into a waveguide path I(b1-b3-b5) and a waveguide path II(b2-b4-b6) which are different from each other in a refractive index, and similar to a structure of the Mach-Zehnder interferometer. A phase adjusting waveguide path region C performs the phase adjustment of the waveguide paths I and II simultaneously. The waveguide paths I and II of the region B are disposed on one extension of a waveguide path a which is optically connected with a light emitting layer 2 of the light emitting region A. Carriers injected into the region B or the voltage impressed on the region B is made to vary so as to change a wavelength path layer 3 in a refractive index. In addition, 5 and 6 are reflective end faces which constitute a laser resonator.

9. 发明专利

JPS649668A INFRARED RAY EMITTING ELEMENT 失效
公开(公告)号：JPS649668A
公开(公告)日：1989-01-12
申请号：JP16390387
申请日：1987-07-02
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： MATSUSHIMA YUICHI , AKIBA SHIGEYUKI , SAKAI KAZUO , UKO KATSUYUKI
IPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01S5/00 , H01S5/02 , H01S5/32 , H01S5/34 , H01S5/343
摘要： PURPOSE:To form the title infrared ray emitting element with a wide range of operational temperature and low threshold current value by a method wherein InP is used for infrared laser substrate in a 2-3mum band while one or more semiconductor layers different in lattice constant from the InP substrate are used for an active layer and/or clad layer. CONSTITUTION:In0.52A0.48As the first clad layer 2 lattice matching with a substrate 1, an active layer 3 comprising InAs single quantum well in thickness of Lz 200Angstrom , In0.52Al0.48As the second clad layer 4, an In0.53Ga0.47As contact layer 5 and electrodes 6, 7 are provided on the InP substrate 1. The lattice constant aInAs of the active layer 3 is different from the lattice constant aInP of the substrate 1 and the clad layer 2, 4. The light emitting wavelength can be controlled by changing the thickness Lz of single quantum well layer. In other words, assuming the energy difference between the quantum level (e) of electron and the quantum level (h) of hole to be e.g. 0.5eV, luminescence in wavelength of 2.5mum can occur. At this time, Lz is assumed to be 80Angstrom and such an extremely thin layer can be easily formed by molecular beam epitaxial method (MBE), vapor lamination method (Mo-CVD) using organic metal, etc.

10. 发明专利

JPS649414A WAVELENGTH VARIABLE OPTICAL MULTIPLEXER AND DEMULTIPLEXER 失效
公开(公告)号：JPS649414A
公开(公告)日：1989-01-12
申请号：JP16390187
申请日：1987-07-02
申请人： KOKUSAI DENSHIN DENWA CO LTD
发明人： UKO KATSUYUKI , SAKAI KAZUO , MATSUSHIMA YUICHI , AKIBA SHIGEYUKI
IPC分类号： H04B10/27 , G02B6/34 , G02F1/01 , G02F1/015 , G02F1/025 , G02F1/125 , G02F1/313 , H04B10/00 , H04B10/29
摘要： PURPOSE:To switch route for propagating light signals of an arbitrary wavelength at a high speed by providing diffraction gratings to the crossing region of two crossed waveguides and varying the refractive index of this crossing region, thereby varying multiplexing and demultiplexing wavelengths. CONSTITUTION:The two ridge waveguides 14, 15 consisting of p-InP layer 13 are crossed and formed on an InGaAsP waveguide layer 12 on an n-InP substrate 11. The diffraction gratings 17 is formed along the layer 12 symmetrically with the respective waveguides 14 and 15 in this crossing region 16. Electrodes 18, 19 on a p side and n side are respectively provided on the front and rear faces of the region 16. A carrier is injected or electric field is impressed on the waveguide layer 20 (the layer 12 in the part of the region 16) by forward biasing or reverse biasing, by which the refractive index can be changed. The central wavelength of the multiplexing and demultiplexing waves is thereby varied and the routes for propagating the the light signals of the arbitrary wavelength are switched at the high speed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式