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1. 发明专利

JP2011116652A Autonomous lower hydrocarbon direct decomposition process system 有权
标题翻译：自下而上的氢气直接分解过程系统
公开(公告)号：JP2011116652A
公开(公告)日：2011-06-16
申请号：JP2011047474
申请日：2011-03-04
申请人： Japan Steel Works Ltd:The , Kajima Corp , Kitami Institute Of Technology , 国立大学法人北見工業大学 , 株式会社日本製鋼所 , 鹿島建設株式会社
发明人： NAKAMURA TETSUSHIGE , NAKAMURA SATOSHI , KAKIHARA HAJIME
IPC分类号： C01B3/26 , C01B3/02
摘要： PROBLEM TO BE SOLVED: To practice a direct decomposition process for lower hydrocarbon without generating carbon dioxide. SOLUTION: The direct decomposition process system for lower hydrocarbon includes: a reaction tube 1 into which lower hydrocarbon is introduced, and which brings the lower hydrocarbon into decomposition reaction into hydrogen and carbon with a catalyst and discharges the generated hydrogen and the residual gas; a heating means 13 which heats the reaction tube with hydrogen as a combustion gas; a feed path 11 which feeds the generated hydrogen to the heating means; and a flow rate controller 12 which is provided at the feed path. Upon the decomposition reaction into the hydrogen and the carbon, the hydrogen generated by the reaction is burnt as a fuel, and the combustion heat is utilized for the reaction, thus an energetically autonomous process can be practiced without generating carbon dioxide without needing the feed of heat from the outside. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为低碳氢化合物的直接分解过程而不产生二氧化碳。解决方案：低级烃的直接分解过程系统包括：将低级烃引入其中的反应管1，并将催化剂中的低碳氢化合物分解成氢和碳，并将产生的氢和残余物排出加油站; 加热装置13，其用氢气作为燃烧气体加热反应管; 将产生的氢气供给到加热装置的进料路径11; 以及设置在进给路径处的流量控制器12。在分解成氢气和碳的反应中，由反应产生的氢气作为燃料燃烧，并且燃烧热被用于反应，因此可以在不产生二氧化碳的情况下实现能量自发的过程，而不需要进料来自外面的热量版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2006290682A Method and catalyst reactor for producing nano-carbon 有权
标题翻译：用于生产纳米碳的方法和催化剂反应器
公开(公告)号：JP2006290682A
公开(公告)日：2006-10-26
申请号：JP2005114302
申请日：2005-04-12
申请人： Japan Steel Works Ltd:The , Kajima Corp , Kitami Institute Of Technology , 国立大学法人北見工業大学 , 株式会社日本製鋼所 , 鹿島建設株式会社
发明人： TADA ASAO , NAKAMURA SATOSHI , NAKAMURA TETSUSHIGE , KAKIHARA HAJIME , TOGO YOSHITAKA , KOSEKI KIKUO , TAKASAGO HIROYUKI
IPC分类号： C01B31/02 , B01J8/08
CPC分类号： C01B31/02 , B01J6/008 , B01J8/10 , B01J19/20 , B01J35/02 , B01J2208/00867 , B82Y30/00 , C01B3/26 , C01B32/05 , C01B32/15 , C01B32/164 , C01B2203/04 , C01B2203/1047 , C01B2203/1058 , Y10S977/842 , Y10S977/843
摘要： PROBLEM TO BE SOLVED: To continuously and stably produce nano-carbon by a catalytic reaction using lower hydrocarbons as raw materials.
SOLUTION: The catalyst reactor has a screw feeder body 1a being a pressure reactor, a catalyst feeding parts 5,6,7 for introducing a catalyst 20 into the feeder body 1a, a lower hydrocarbon feeding parts 3, 4 for introducing the lower hydrocarbons into the feeder body 1a, a screw 1b for transporting the catalyst and the nano-carbon formed by the thermal decomposition of the lower hydrocarbons in the feeder body 1a, a solid sending-out part 10 for sending out the catalyst and the nano-carbon transported by the screw 1b to the outside of the feeder body 1a, and a gas sending-out part 11 for sending out unreacted lower hydrocarbons and hydrogen formed by the thermal decomposition to the outside of the feeder body 1a. The continuous reaction is performed efficiently at a constant conversion ratio by continuously discharging the nano-carbon growing with the elapse of time and used catalyst to the outside of the reactor and feeding the same amount of a virgin catalyst as that of the used catalyst.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过使用低级烃作为原料的催化反应来连续稳定地制造纳米碳。解决方案：催化剂反应器具有作为压力反应器的螺旋进料器主体1a，用于将催化剂20引入进料器主体1a的催化剂供给部5,6,7，用于引入低级烃进入给料体1a，用于输送催化剂的螺杆1b和通过进料器主体1a中的低级烃的热分解形成的纳米碳，用于送出催化剂和纳米级的固体发出部分10 通过螺杆1b输送到供给体1a的外部的气体输送部11和用于将未反应的低级烃和通过热分解形成的氢排出到供给体1a的外部的气体输出部11。通过将经过时间的纳米碳生长和使用的催化剂连续排出到反应器的外部并进料与使用的催化剂相同量的原始催化剂，以恒定的转化率进行连续反应。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2011116656A Method and catalytic reactor for producing nano-carbon 有权
标题翻译：用于生产纳米碳的方法和催化反应器
公开(公告)号：JP2011116656A
公开(公告)日：2011-06-16
申请号：JP2011055448
申请日：2011-03-14
申请人： Japan Steel Works Ltd:The , Kajima Corp , Kitami Institute Of Technology , 国立大学法人北見工業大学 , 株式会社日本製鋼所 , 鹿島建設株式会社
发明人： TADA ASAO , NAKAMURA SATOSHI , NAKAMURA TETSUSHIGE , KAKIHARA HAJIME , TOGO YOSHITAKA , KOSEKI KIKUO , TAKASAGO HIROYUKI
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To make it possible to continuously and stably produce nano-carbon by catalytic reaction using lower hydrocarbons as raw materials.
SOLUTION: A catalytic reactor has a screw feeder 1a as a pressure reactor, catalyst feeding parts 5, 6, 7 for introducing a catalyst 20 into the feeder 1a, lower hydrocarbon feeding parts 3, 4 for introducing the lower hydrocarbons into the feeder 1a, a screw 1b for transporting the catalyst and the nano-carbon formed by the thermal decomposition of the lower hydrocarbons in the feeder 1a only by its rotation, a solid sending-out part 10 for sending out the catalyst and the nano-carbon transported by the screw 1b to the outside of the feeder 1a, and a gas sending-out part 11 for sending out unreacted lower hydrocarbons and hydrogen formed by the thermal decomposition to the outside of the feeder 1a. The continuous reaction is performed efficiently at a constant conversion ratio by continuously discharging the nano-carbon growing with the elapse of time and used catalyst to the outside of the reactor and feeding the same amount of a virgin catalyst as that of the used catalyst.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过使用低级烃作为原料的催化反应，可以连续稳定地制造纳米碳。解决方案：催化反应器具有作为压力反应器的螺旋进料器1a，用于将催化剂20引入进料器1a的催化剂进料部分5,6,7，用于将低级烃引入到下部烃进料部分3,4中进料器1a，用于输送催化剂的螺杆1b和通过其进给器1a中的低级烃的热分解形成的纳米碳;固体送出部分10，用于将催化剂和纳米碳通过螺杆1b输送到进料器1a的外部，以及气体输出部11，用于将未反应的低级烃和由热分解形成的氢气送出到进料器1a的外部。通过将经过时间的纳米碳生长和使用的催化剂连续排出到反应器的外部并进料与使用的催化剂相同量的原始催化剂，以恒定的转化率进行连续反应。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2006124233A Reforming reactor 审中-公开
标题翻译：改性反应器
公开(公告)号：JP2006124233A
公开(公告)日：2006-05-18
申请号：JP2004315100
申请日：2004-10-29
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： KOYANAGI KUNIHIKO , MASHITA TORU , NAKAMURA TETSUSHIGE
IPC分类号： C01B3/38 , B01D53/22 , B01J19/24
CPC分类号： Y02P20/52
摘要： PROBLEM TO BE SOLVED: To use a compact reforming reactor excellent in durability so as to efficiently perform a reforming reaction accompanied with endothermic action for obtaining a hydrogen-containing gas by using a hydrocarbon or an oxygen-containing hydrocarbon as a raw material. SOLUTION: Flow passages 2 for a raw material gas are formed through a catalyst carrier block 1, then a catalyst is supported on the inner surface of each flow passage 2 for the raw material gas, and a cylindrical gas separation membrane 20 having an interval between the inner surface of the flow passage 2 for the raw material gas and itself is arranged in each flow passage 2 for the raw material gas. Ventilation passages 21, 22 for taking out the permeated gas to the outside of the catalyst carrier block 1 are connected to the gas separation membrane 20. The temperature of the catalyst carrier block 1 is raised by providing a heating means 3 for heating the catalyst carrier block 1 or by the motion of other functions. Thereby, the reforming reaction is stabilized, and it becomes possible to perform the reaction at a higher conversion rate than the equilibrium conversion rate. The apparatus is easily made compact, and the restriction is also small when a reformer is installed in a desired site. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：使用耐久性优异的紧凑型重整反应器，以便通过使用烃或含氧烃作为原料有效地进行伴随吸热作用的重整反应，以获得含氢气体。解决方案：通过催化剂载体块1形成用于原料气体的流动通道2，然后将催化剂负载在用于原料气体的每个流动通道2的内表面上，并且具有圆柱形气体分离膜20，其具有在原料气体的流路2中配置有用于原料气体的流路2的内表面与其自身之间的间隔。用于将渗透气体排出到催化剂载体块1的外部的通风通道21,22与气体分离膜20相连。催化剂载体块1的温度通过设置加热装置3而升高，催化剂载体块1或其他功能的动作。由此，重整反应稳定，可以以比平衡转化率更高的转化率进行反应。该装置容易制造，并且当将重整器安装在所需位置时，该限制也很小。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2009252641A Method of producing superconducting oxide material 有权
标题翻译：生产超导氧化物材料的方法
公开(公告)号：JP2009252641A
公开(公告)日：2009-10-29
申请号：JP2008101536
申请日：2008-04-09
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： NAKAMURA TETSUSHIGE , SATO RYOSUKE , KOYANAGI KUNIHIKO , EBISAWA TAKASHI , OTSU HIDEHIKO , SOMA MITSUGI , TSUCHIYA TETSUO , KUMAGAI TOSHIYA , TSUKADA KENICHI
IPC分类号： H01B13/00 , C01G1/00 , C01G3/00 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a superconducting oxide material that achieves the same effect as that obtained by back irradiation even when forming a thinner film by overglazing without limiting laser irradiation conditions and even when forming films on both sides of a substrate.
SOLUTION: The method of producing an epitaxially grown superconducting coating material includes: a process (1) of applying a solution of metallic organic compound having an oxide for forming a superconducting material onto the substrate and drying it; a provisional firing process (2) of pyrolizing an organic matter in the metallic organic compound; and a full-scale firing process (3) of performing conversion into a superconducting material, wherein, when a laser is irradiated between the processes (1) and (2), a scattering mechanism is disposed immediately before a surface coated with the solution of metallic organic compound where the superconducting material is formed, and a laser, after being once scattered, is irradiated to the organic compound solution.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造超导氧化物材料的方法，即使在不限制激光照射条件的情况下甚至当在两侧形成膜时，通过过度玻璃形成较薄的膜也能获得与通过反向照射获得的效果相同的效果的基底。解决方案：制备外延生长的超导涂层材料的方法包括：将具有用于形成超导材料的氧化物的金属有机化合物溶液施加到基底上并干燥的方法（1）对金属有机化合物中的有机物进行热处理的暂时烧制工序（2）以及进行超导材料的转换的全尺寸焙烧工序（3），其中，当在工序（1）和（2）之间照射激光时，散射机构紧接在被涂覆有其中形成超导材料的金属有机化合物和被一次散射的激光照射到有机化合物溶液上。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010275119A Method and apparatus for producing superconductive oxide material 有权
标题翻译：用于生产超导氧化物材料的方法和装置
公开(公告)号：JP2010275119A
公开(公告)日：2010-12-09
申请号：JP2009126121
申请日：2009-05-26
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial Science & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： KITADA NORITAKA , NAKAMURA TETSUSHIGE , SATO RYOSUKE , KOYANAGI KUNIHIKO , SOMA MITSUGI , TSUKADA KENICHI , TSUCHIYA TETSUO , YAMAGUCHI IWAO , MANABE TAKAAKI , KUMAGAI TOSHIYA
IPC分类号： C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a superconductive oxide material by which a superconductive oxide film of good quality is obtained in a large area on a substrate and easy control is achieved. SOLUTION: In the method for producing a superconductive oxide material, at the time of producing a superconductive coating material epitaxially grown through a step (A) wherein an organic compound solution of a metal whose oxide forms a superconductive substance is applied onto a substrate and dried, a laser irradiation step (B) wherein the organic component of the organic compound of the metal is photodegraded with laser, a temporary firing step (C) wherein the organic component in the organic compound of the metal is thermally decomposed, and a concluding firing step (C) wherein conversion to a superconductive substance is performed, the laser irradiation of the step (B) is performed under substrate cooling by cooling the substrate (4) by surface contact of a cooling body with the substrate (4). COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种用于制造超导氧化物材料的方法，通过该方法可以在基板上大面积地获得质量好的超导氧化物膜，并且实现了容易的控制。解决方案：在制造超导氧化物材料的方法中，在制造通过其中将氧化物形成超导性物质的金属的有机化合物溶液施加到其上的步骤（A）外延生长的超导涂层材料时，基板并干燥，其中金属的有机化合物的有机组分用激光光降解的激光照射步骤（B），金属有机化合物中的有机组分被热分解的临时烧制步骤（C），以及执行转换为超导物质的结束烧制步骤（C），通过冷却体与基板（4）的表面接触来冷却基板（4），在基板冷却下进行步骤（B）的激光照射，。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2012236744A Method for producing oxide superconductor film having alleviated internal stress 有权
标题翻译：用于生产含有内部应力的氧化物超导体膜的方法
公开(公告)号：JP2012236744A
公开(公告)日：2012-12-06
申请号：JP2011106931
申请日：2011-05-12
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所 , National Institute Of Advanced Industrial Science & Technology , 独立行政法人産業技術総合研究所
发明人： NAKAMURA TETSUSHIGE , KITADA NORITAKA , SATO RYOSUKE , TERAO KATSUHIRO , SOMA MITSUGI , TSUCHIYA TETSUO , TSUKADA KENICHI , YAMAGUCHI IWAO
IPC分类号： C30B29/22 , C01G1/00 , C30B1/04 , C30B31/20 , H01B12/06 , H01B13/00
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To form a film of a superconductive material on a sapphire substrate having a film thickness of ≥300 nm by suppressing generation of a microcrack, and to provide a method for producing the same.SOLUTION: In this method for producing an oxide superconductive material, a superconductive thin film material which is epitaxially grown on a substrate is produced through: a step (1) of applying an organic compound solution of a metal whose oxide forms a superconductive material onto a substrate so as to be dried; a laser irradiation step (2) of photolyzing an organic component in the organic compound of the metal by an excimer laser which is ultraviolet light; a temporary calcining step (3) of thermally decomposing the organic component in the organic compound of the metal; and a glost firing step (4) of performing conversion into a superconductive material. In the method, before performing the glost firing step, laser irradiation is performed only to a predetermined spot to intermingle an a-axially grown precursor spot with a c-axially grown precursor spot in the superconductive material, and then the glost firing step is performed, and thus only the predetermined spot is c-axially grown, to thereby alleviate internal stress of the superconductive material.
摘要翻译：要解决的问题：通过抑制微裂纹的产生，在具有≥300nm的膜厚的蓝宝石衬底上形成超导材料的膜，并提供其制造方法。解决方案：在该氧化物超导材料的制造方法中，通过以下步骤制造在衬底上外延生长的超导薄膜材料：（1）施加氧化物形成超导体的金属的有机化合物溶液材料在基材上以便被干燥; 激光照射步骤（2），其通过紫外光的准分子激光将金属的有机化合物中的有机成分光解; 将金属的有机化合物中的有机成分热分解的临时烧成工序（3）以及进行转换成超导材料的烧制步骤（4）。在该方法中，在进行灼烧步骤之前，只对预定的点进行激光照射，以将超轴向生长的前体斑点与c轴向生长的前体斑点混合在超导材料中，然后进行釉面烧制步骤，因此只有预定点被c轴向生长，从而减轻超导材料的内应力。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2011038175A Bilayer thin-film structure, trilayer thin-film structure containing superconductive substance, and manufacturing method therefor 有权
标题翻译：双层薄膜结构，含有超导材料的TRILAYER薄膜结构及其制造方法
公开(公告)号：JP2011038175A
公开(公告)日：2011-02-24
申请号：JP2009188585
申请日：2009-08-17
申请人： Japan Steel Works Ltd:The , National Institute Of Advanced Industrial Science & Technology , 株式会社日本製鋼所 , 独立行政法人産業技術総合研究所
发明人： SATO RYOSUKE , TERAO KATSUHIRO , NAKAMURA TETSUSHIGE , EBISAWA TAKASHI , SOMA MITSUGI , TSUCHIYA TETSUO , TSUKADA KENICHI , YAMAGUCHI IWAO
IPC分类号： C23C14/34 , H01B12/06 , H01B13/00
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To provide an Al
2 O
3 -CeO
2 bilayer thin-film structure which has a CeO
2 layer having the lattice constant varied and can provide a superconductive film having a high critical current on the CeO
2 face side by the effect of the CeO
2 layer; an Al
2 O
3 -CeO
2 -superconductive substance trilayer thin-film structure in which the superconductive film having the high critical current on the CeO
2 face side has been formed by using the Al
2 O
3 -CeO
2 bilayer thin-film structure and by utilizing the CeO
2 layer having the lattice constant varied; and a manufacturing method therefor.
SOLUTION: The Al
2 O
3 -CeO
2 bilayer thin-film structure has CeO
2 having the lattice constant of the CeO
2 layer varied, which is formed by preparing a thin film structure having a CeO
2 layer with a thickness of 20-300 nm on an Al
2 O
3 single crystal layer with a thickness of 0.4-1.0 mm and irradiating the thin film structure with a laserbeam having an energy density of 1 mJ/cm
2 to 250 mJ/cm
2 by 1,000-1,000,000 pulses. The Al
2 O
3 -CeO
2 -superconductive substance trilayer thin-film structure has a superconductive thin-film with a thickness of 100-800 nm provided on the CeO
2 layer side of the above Al
2 O
3 -CeO
2 bilayer thin-film structure. The method for manufacturing the structures is disclosed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有CeO 2 2 双层薄膜结构具有晶格常数的> 2 层变化，并且可以通过CeO 2 SBS 2 的作用在CeO 2 SBB 2面上提供具有高临界电流的超导膜。层; 其中在CeO上具有高临界电流的超导膜的导电物质三层薄膜结构的Al 2 3 -CeO 2 已经通过使用Al 2 3 -CeO 2 双层薄膜结构形成了 2 面侧，通过利用晶格常数变化的CeO 2 层; 及其制造方法。解决方案：Al 2 3 -CeO 2 双层薄膜结构具有CeO 2 具有 CeO 2 层的晶格常数变化，其通过在Al 2 O 3上制备厚度为20-300nm的具有CeO 2 S / SiO 2的薄膜结构而形成， SB> 2 > 3 单晶层，并用能量密度为1mJ / cm 2的激光束照射薄膜结构， / SP>至250mJ / cm 2 / SP> 1,000-1,000,000个脉冲。超导材料三层薄膜结构具有厚度为100-800的超导薄膜，具有超导薄膜，其厚度为100-800 nm，在上述Al 2 SB 3薄膜的CeO 2 层侧上提供。结构体。公开了制造结构的方法。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2013162049A Superconducting multilayer structure thin film 有权
标题翻译：超级多层结构薄膜
公开(公告)号：JP2013162049A
公开(公告)日：2013-08-19
申请号：JP2012024541
申请日：2012-02-07
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： TERAO KATSUHIRO , SATO RYOSUKE , KITADA NORITAKA , NAKAMURA TETSUSHIGE , SOMA MITSUGI , TSUCHIYA TETSUO , YAMAGUCHI IWAO
IPC分类号： H01L39/02 , B32B9/00 , C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00 , H01L39/00 , H01L39/24
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To provide a superconducting thin film structure suitable for filter applications not requiring advanced deposition device or technique, by producing a superconducting thin film mixing c-axis growth and a-axis growth without providing an extra buffer layer on a c-axis epitaxial growth superconducting thin film provided on a substrate, and to provide a manufacturing method therefor.SOLUTION: The superconducting thin film structure is provided by laminating a superconducting thin film, mixing c-axis growth and a-axis growth of the same chemical material as a c-axis epitaxial growth superconducting material, on a c-axis epitaxial growth superconducting thin film formed on a substrate, with no buffer layer interposed therebetween.
摘要翻译：要解决的问题：为了提供适用于不需要先进沉积装置或技术的过滤器应用的超导薄膜结构，通过生产混合c轴生长和a轴生长的超导薄膜，而不在c- 轴向外延生长超导薄膜，并提供其制造方法。解决方案：超导薄膜结构通过层压超导薄膜，混合c轴生长和同轴化学材料的a轴生长而提供作为c轴外延生长超导材料，在形成在衬底上的c轴外延生长超导薄膜上，其间没有缓冲层。

10. 发明专利

JP2012078005A Continuous heat treatment furnace 有权
标题翻译：连续热处理炉
公开(公告)号：JP2012078005A
公开(公告)日：2012-04-19
申请号：JP2010223536
申请日：2010-10-01
申请人： Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： NAKAMURA TETSUSHIGE , TERAO KATSUHIRO , SATO RYOSUKE , KITADA NORITAKA
IPC分类号： F27B9/14 , F27B9/24 , F27B9/38 , F27B9/39 , F27D3/06 , F27D3/12
摘要： PROBLEM TO BE SOLVED: To provide a continuous heat treatment furnace capable of performing mass heat treatment for a comparatively long time by extending a residence time in the heat treatment furnace without extending a horizontal length of the heat treatment furnace and without changing a conveyance speed on the outside of the heat treatment furnace.SOLUTION: The continuous heat treatment furnace includes: a carrying part (carrying conveyor 15) for successively carrying laid plate-like objects 100 to be treated from the outside of the furnace 1 to the inside of the furnace 1; a vertical conveying passage (intra-furnace conveying means 5) for successively receiving the plate-like objects 100 to be treated in the furnace, holding the laid objects 100 to be treated on multiple stages in the vertical direction, and conveying the held objects 100 to be treated upward or downward in the furnace; and a carry-out part (carry-out conveyor 16) for successively receiving plate-like objects 100 to be heat treated while being conveyed through the vertical conveying passage on an upper position or a lower position in the conveyance direction and successively carrying out the received objects 100 to the outside of the processing furnace, so that heat treatment can be efficiently performed for a long time without extending the furnace length.
摘要翻译：要解决的问题：为了提供一种连续热处理炉，其能够在不延长热处理炉的水平长度的情况下延长在热处理炉中的停留时间并且不改变热处理炉外面的输送速度。解决方案：连续热处理炉包括：用于从炉1的外部向炉1内部依次承载待处理的板状物100的承载部（承载传送带15）垂直输送通道（炉内输送装置5），用于连续地接收在炉中待处理的板状物体100，将待处理的被处理物100沿垂直方向保持多级，并传送被保持物100 在炉中向上或向下处理; 以及输送部（输出输送机16），用于在沿着输送方向的上部位置或下部位置输送通过垂直输送通道，连续地接收待热处理的板状物体100，并依次进行接收物体100到处理炉的外部，使得可以长时间有效地进行热处理而不延长炉长度。版权所有（C）2012，JPO＆INPIT

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