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1. 发明专利

JPS6096754A COATING METHOD OF TITANIUM CARBIDE THICK FILM 失效
公开(公告)号：JPS6096754A
公开(公告)日：1985-05-30
申请号：JP20348783
申请日：1983-10-28
申请人： JAPAN ATOMIC ENERGY RES INST , HITACHI LTD , HITACHI ENG CO LTD , ULVAC CORP
发明人： MURAKAMI YOSHIO , ABE TETSUYA , MIZOGUCHI TADANORI , SAGAWA NORIMOTO , ITOU YUTAKA , WATANABE KAZUHIRO
IPC分类号： C01B31/30 , C23C14/00 , C23C14/02 , C23C14/06 , C23C14/32 , G21B1/11 , G21B1/17
摘要： PURPOSE:To apply a thick titanium carbide film to a substrate in good close adhesiveness, by adjusting the internal stress of the titanium carbide film by changing voltage applied to the substrate corresponding to the accumulated film thickness of titanium carbide. CONSTITUTION:In applying a thick titanium carbide film to a substrate by a physical vapor deposition method, constant voltage of minus 150-250V is applied to the substrate at the beginning of coating to perform the positive draw- in of a titanium ion and the close adhesiveness of the substrate with the titanium carbide film is enhanced. When the titanium carbide film having good close adhesiveness reaches several mum, voltage to be applied is gradually lowered until 1-2mum is further accumulated to be brought to minus 5V or less. Thereafter, voltage is constantly held at minus 5V or less until vapor deposition is finished to form the objective film thickness. By this method, the titanium carbide film with a thickness of several mum or more is formed on the substrate in good close adhesiveness.

2. 发明专利

JPS60166887A FIRST WALL MEMBER FOR NUCLEAR FUSION DEVICE AND MANUFACTURE 失效
公开(公告)号：JPS60166887A
公开(公告)日：1985-08-30
申请号：JP20348683
申请日：1983-10-28
申请人： JAPAN ATOMIC ENERGY RES INST , HITACHI LTD , HITACHI ENG CO LTD , SUMITOMO ELECTRIC INDUSTRIES
发明人： MURAKAMI YOSHIO , ABE TETSUYA , NAKAMURA KAZUYUKI , MIZOGUCHI TADANORI , SAGAWA NORIKI , ITOU YUTAKA , FUJIMORI NAOHARU , YASHIKI TETSUO
IPC分类号： C23C16/32 , G21B1/00 , G21B1/11 , G21B1/17

3. 发明专利

JPH04160749A QUADRUPOLE TYPE MASS SPECTROMETER 失效
公开(公告)号：JPH04160749A
公开(公告)日：1992-06-04
申请号：JP28385090
申请日：1990-10-22
申请人： JAPAN ATOMIC ENERGY RES INST , ULVAC CORP
发明人： HIROKI SEIJI , ABE TETSUYA , MURAKAMI YOSHIO , YAGISHITA KOJI , TSUCHIYA NOBUHIKO
IPC分类号： G01N27/62 , H01J49/42
摘要： PURPOSE:To repeatably make high resolution measuring by simple operation on a low mass side by switching at least one of the magnitude of D.C. voltage, and the maximum value and the angular frequency of high frequency voltage. CONSTITUTION:When variables a=8eU/mr0 omega , and q=4eV/mr0 omega (where U: magnitude of D.C. voltage, V: maximum value of high frequency voltage, e: electric charge of ion, m: mass of ion, r0: radius of inscribed circle of rod electrode, and omega: angular frequency of high frequency voltage) are represented as a rectangular coordinate ((a and q) plane), at least one of U, V, and omega is switched in different values for the purpose of the selective use of a first stable region nearest to and a second stable region second nearest to an original point in a region where a condition, in which ions can pass a quadrupole electrode, is decided. Thus, high resolution excellent in stability and repeatability can be obtained by simple operation even if high resolution is set.

4. 发明专利

JPH0193474A BONDING OF CERAMIC 失效
公开(公告)号：JPH0193474A
公开(公告)日：1989-04-12
申请号：JP4488787
申请日：1987-02-26
申请人： ULVAC CORP , JAPAN ATOMIC ENERGY RES INST
发明人： KONDO HITOSHI , KAWAMURA HIROAKI , INAGAWA KONOSUKE , ABE TETSUYA , MURAKAMI YOSHIO
IPC分类号： B23K20/00 , B23K35/32 , C04B37/00 , C04B37/02
摘要： PURPOSE:To facilitate firm bonding of a ceramic and a bonding object, by inserting a specific substance between a ceramic and a bonding object and hot-pressing the product. CONSTITUTION:A punch rod 16 provided with a ceramic 14 and a punch rod 22 provided with bonding objects 12, 11 are inserted into a vacuum chamber 15. After evacuating the vacuum chamber 15 with a vacuum pump 37, a gaseous mixture of Ar and H2 is introduced into the chamber through a pipe 23 to maintain the chamber at a prescribed pressure. A raw material 27 is evaporated by arc discharge 32 generated between an electrode 28 and the raw material 27 to produce a reaction product composed of fine particles or fine powder finer than the surface roughness of the bonding surfaces of the ceramic and the bonding object, having high reactivity with both components and exhibiting firm adhesivity. A layer 34 of the reaction product having larger thickness than the surface roughness is deposited on the ceramic 14. The punch rod 16 is lowered into a heater 19 with a hydraulic device 20, the punch rod 22 is lowered with a hydraulic device 25 and both bonding surfaces are brought into contact with each other and bonded by heating under pressure.

5. 发明专利

JPS6442369A METHOD FOR JOINING SILICON NITRIDE CERAMICS 失效
公开(公告)号：JPS6442369A
公开(公告)日：1989-02-14
申请号：JP19829687
申请日：1987-08-10
申请人： ULVAC CORP , JAPAN ATOMIC ENERGY RES INST
发明人： KONDO HITOSHI , KAWAMURA HIROAKI , INAGAWA KONOSUKE , ABE TETSUYA , MURAKAMI YOSHIO
IPC分类号： C04B37/00
摘要： PURPOSE:To join together with high strength at low heating temps. between separated silicon nitride ceramics at the time of joining silicon nitride ceramics by placing the fine powders of SiNxOy specified in oxygen content and grain size and preferably together with the fine powders of auxiliary sintering agents, between the adjoining plane and then heating the obtained composition. CONSTITUTION:The fine powders of SiNxOy, in which the oxygen content is

6. 发明专利

JPH07258825A MATERIAL COATED WITH CERAMIC FILM AND METHOD AND EQUIPMENT FOR PRODUCING THE SAME 失效
公开(公告)号：JPH07258825A
公开(公告)日：1995-10-09
申请号：JP5146594
申请日：1994-03-23
申请人： HITACHI LTD , JAPAN ATOMIC ENERGY RES INST
发明人： ONO SHIGEKI , FUJIMORI HARUO , ABE TETSUYA , HIROKI SEIJI , MURAKAMI YOSHIO
IPC分类号： C23C14/06 , C23C14/30 , H01L21/203
摘要： PURPOSE:To reduce the occurrence of peeling of a ceramic film as compared with the conventional one and to facilitate the increase in the film thickness of a ceramic film as compared to the conventional method. CONSTITUTION:The surface of a stainless steel 1 as a base material is heated by using an infrared ray lamp 9, and surface temp. is regulated to about 200-500 deg.C. At this temp. the base material 1 is coated with alumina 4 by a sputtering vapor deposition method. When the thickness of an alumina film 13 reaches a small thickness of about 10-500nm, the infrared ray lamp 9 is turned off. In the state of lower temp. than the temp. in the above-mentioned prescribed range, an alumina film 13' is vapor-deposited and increased in thickness until its film thickness reaches a prescribed thickness, e.g., of about 100-200mum. When an electron beam source evaporation method is used, the above heating is not done and the increase of film thickness is done while applying cooling to the base material at the time of increasing film thickness. Further, thin film coating and increase in film thickness can be done by an electron beam source evaporation method and a sputtering vapor deposition method, respectively.

7. 发明专利

JPH08338394A MOLECULAR PUMP 失效
公开(公告)号：JPH08338394A
公开(公告)日：1996-12-24
申请号：JP17027895
申请日：1995-06-13
申请人： JAPAN ATOMIC ENERGY RES INST , OSAKA SHINKU KIKI SEISAKUSHO
发明人： HIROKI SEIJI , ABE TETSUYA , MURAKAMI YOSHIO , NAKAMURA JUNICHI , IGUCHI MASASHI
IPC分类号： F04D19/04 , H02K7/09
摘要： PURPOSE: To obtain a molecular pump which can exhaust a gas with a small molecular weight and a small viscosity coefficient such as a hydrogen isotope efficiently in a nuclear fusion reactor, and can bear to a high energy and a high dose of radial rays generated from the nuclear fusion reactor. CONSTITUTION: While all the coverage members of coils 2a, 3a, 4a, 5a, and 6a around a shaft B, and the wires of wirings, are made of ceramics, the material of a rotor C is made of a titannium alloy, and furthermore, a heater G and a cooling water jacket E are provided at the inner side and the outer side of a stator D, so as to make the temperature of the stator D regulatable.

8. 发明专利

JPH08270599A THREAD GROOVE VACUUM PUMP 失效
公开(公告)号：JPH08270599A
公开(公告)日：1996-10-15
申请号：JP9966695
申请日：1995-03-31
申请人： JAPAN ATOMIC ENERGY RES INST , OSAKA SHINKU KIKI SEISAKUSHO
发明人： HIROKI SEIJI , ABE TETSUYA , MURAKAMI YOSHIO , NAKAMURA JUNICHI , IGUCHI MASASHI
IPC分类号： F04D19/04
摘要： PURPOSE: To keep the gap between a rotor and a stator always constant by forming a part of the whole of the periphery of the rotor in the shape of one or two cones, and setting the position of intersecting point of the extensions of the generating lines at the conical periphery to the specified position from the reference point of the center axis. CONSTITUTION: In a thread groove pump where a rotor 2 rotates within a stator 3, a part or the whole of the periphery of the rotor 2 is made in the shape of one or two cones, and also the cone 2a is made so that the position of the intersecting point of the extensions of the generating lines at the conical periphery may be -β.Ys from the reference point position at the bottom of lower bearing on the center line of the shaft 4 of the rotor 2. But, β is expressed by the expression of (αs /αr )f-1, and αs is the coefficient of thermal expansion, and αr is the coefficient of thermal expansion of rotor material. Further, f is expressed by the expression of ΔTs/ΔTr, and ΔTs is the temperature rise from normal temperature of the shaft 4, and ΔTr is the temperature rise from normal temperature of the rotor 2, and Ys is the position of Y coordinate of the coupling point between the shaft 4 and the rotor 2.

9. 发明专利

JPH05248542A 失效
公开(公告)号：JPH05248542A
公开(公告)日：1993-09-24
申请号：JP35419992
申请日：1992-12-14
申请人： JAPAN ATOMIC ENERGY RES INST , NIPPON BATSUKUSU METAL KK
发明人： OBARA KENJIRO , MURAKAMI YOSHIO , SAITO SABURO
IPC分类号： F16J15/08 , F16L23/20
摘要： PURPOSE:To provide a high degree of vacuum seal characteristics by housing a ring type metal gasket having the prescribed Vickers hardness within a seal groove having the taper section of a pair of flanges. CONSTITUTION:This metal gasket 11 is so formed as to have an annular body of rectangular longitudinal cross section with a ratio of width (w) to thickness (t) in the range of 0.5 to 4.0, and Vickers hardness within the range of 50 to 120. The gasket 11 is used for a flange joint structure to connect pipings 21 and 21. Namely, flange bodies 23 and 23 welded to the pipings 21 and 21 are faced to each other via the metal gasket 11 and tightened with a clamping bolt and nut 35 and 37, thereby jointing the pipings 21 and 21 to each other in liquid-tight state. In this case, the metal gasket 11 maintains proper sealing capability in such a way that two inner gasket corners 11a and 11b are compressed with a taper section 27 between the end 25a of a knife edge 25 and an inner wall 29.

10. 发明专利

JPH03218411A CRYSTAL OSCILLATOR FOR MONITOR AND FILM THICKNESS CONTROLLER USING THE SAME 失效
公开(公告)号：JPH03218411A
公开(公告)日：1991-09-26
申请号：JP1394390
申请日：1990-01-24
申请人： NIHON DEMPA KOGYO CO , JAPAN ATOMIC ENERGY RES INST
发明人： HIROKI SEIJI , ABE TETSUYA , MURAKAMI YOSHIO , CHIBA AKIO
IPC分类号： G01B17/02 , H03H9/00 , H03H9/19
摘要： PURPOSE:To make frequency stability satisfactory to the temperature of an oscillator for monitor and to control film thickness with high accuracy by selecting the cutting angle of the oscillator for monitor at a specified angle and making the operating temperature of a thin film forming device coincident with the minimum value of the frequency temperature characteristic of the oscillator for monitor. CONSTITUTION:At the thin film forming device, a crystal oscillator 2 for monitor setting a frequency reduction amount is provided parallelly at an oscillator 1 to be deposited and a comparator 5 compares the oscillation frequency of the oscillator 2 to be detected by a counter 3 with a target frequency from a reference signal source 4. When the both frequencies are coincident, a shutter 7 of a deposition source is closed. The operating temperature of the thin film forming device is selected to 100-250 deg.C and the cutting angle of the oscillator 2 is selected to the angle inclining a Y cut board from a (y) axis to a (z) axis direction by 36 deg.00'-38 deg.50'. Thus, the minimum value of the frequency temperature characteristic of the oscillator 2 is set in the range of about 120-250 deg.C and even when the operating temperature of a depositing device is slightly changed, the oscillation frequency of the oscillator 2 is made stable. Then, the film thickness can be controlled with high accuracy.

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