专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH0193474A BONDING OF CERAMIC 失效
公开(公告)号：JPH0193474A
公开(公告)日：1989-04-12
申请号：JP4488787
申请日：1987-02-26
申请人： ULVAC CORP , JAPAN ATOMIC ENERGY RES INST
发明人： KONDO HITOSHI , KAWAMURA HIROAKI , INAGAWA KONOSUKE , ABE TETSUYA , MURAKAMI YOSHIO
IPC分类号： B23K20/00 , B23K35/32 , C04B37/00 , C04B37/02
摘要： PURPOSE:To facilitate firm bonding of a ceramic and a bonding object, by inserting a specific substance between a ceramic and a bonding object and hot-pressing the product. CONSTITUTION:A punch rod 16 provided with a ceramic 14 and a punch rod 22 provided with bonding objects 12, 11 are inserted into a vacuum chamber 15. After evacuating the vacuum chamber 15 with a vacuum pump 37, a gaseous mixture of Ar and H2 is introduced into the chamber through a pipe 23 to maintain the chamber at a prescribed pressure. A raw material 27 is evaporated by arc discharge 32 generated between an electrode 28 and the raw material 27 to produce a reaction product composed of fine particles or fine powder finer than the surface roughness of the bonding surfaces of the ceramic and the bonding object, having high reactivity with both components and exhibiting firm adhesivity. A layer 34 of the reaction product having larger thickness than the surface roughness is deposited on the ceramic 14. The punch rod 16 is lowered into a heater 19 with a hydraulic device 20, the punch rod 22 is lowered with a hydraulic device 25 and both bonding surfaces are brought into contact with each other and bonded by heating under pressure.

2. 发明专利

JPS6442369A METHOD FOR JOINING SILICON NITRIDE CERAMICS 失效
公开(公告)号：JPS6442369A
公开(公告)日：1989-02-14
申请号：JP19829687
申请日：1987-08-10
申请人： ULVAC CORP , JAPAN ATOMIC ENERGY RES INST
发明人： KONDO HITOSHI , KAWAMURA HIROAKI , INAGAWA KONOSUKE , ABE TETSUYA , MURAKAMI YOSHIO
IPC分类号： C04B37/00
摘要： PURPOSE:To join together with high strength at low heating temps. between separated silicon nitride ceramics at the time of joining silicon nitride ceramics by placing the fine powders of SiNxOy specified in oxygen content and grain size and preferably together with the fine powders of auxiliary sintering agents, between the adjoining plane and then heating the obtained composition. CONSTITUTION:The fine powders of SiNxOy, in which the oxygen content is

3. 发明专利

JP2003249125A TRANSPARENT CONDUCTIVE FILM WITH LOW RESISTANCE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003249125A
公开(公告)日：2003-09-05
申请号：JP2002050300
申请日：2002-02-26
申请人： ULVAC CORP
发明人： KAWAMURA HIROAKI , TAKEI HIDEO , ISHIBASHI AKIRA
IPC分类号： H01L51/50 , C04B35/00 , C04B35/495 , C04B35/64 , H01B5/14 , H01B13/00 , H05B33/14 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a transparent conductive thin film that is sintered at low temperatures and has low electrical resistances after sintering, and to provide the transparent conductive film with low resistances. SOLUTION: A dispersion liquid of fine particles of metal oxides such as ITO or the like is applied on a substrate to be treated and sintered at 150-200°C in the atmosphere to form a porous transparent conductive film, and then heated at 100-250°C in a mixture atmosphere of a gas including oxygen or ozone and an indium halide gas or an organic indium gas. Holes in the porous conductive film are filled with indium oxide generated by the reaction of oxygen and organic indium. COPYRIGHT: (C)2003,JPO

4. 发明专利

JPH09258004A ANTIREFLECTION MULTILAYERED FILM AND ITS FILM FORMATION, AS WELL AS ITS FILM FORMING DEVICE 失效
公开(公告)号：JPH09258004A
公开(公告)日：1997-10-03
申请号：JP6860896
申请日：1996-03-25
申请人： ULVAC CORP
发明人： MOMONO TAKESHI , MATSUMOTO MASAHIRO , KAWAMURA HIROAKI , OTA YOSHIFUMI , NAKAMURA KYUZO
IPC分类号： G02B1/11 , C23C14/08 , G02B1/115
摘要： PROBLEM TO BE SOLVED: To provide an antireflection film having a water repellent layer which does not easily peel and has excellent durability and water repellent property, and a method for forming the antireflection film, as well as a device capable of easily and inexpensively producing the antireflection film. SOLUTION: The multilayered antireflection film 2 formed by forming >=2 layers of optical thin films 3 for antireflection consisting of >=2 kinds of materials varying in refractive index on a substrate 1, and forming the water repellent layer of a high-polymer material composed of C, F, H, N, S, O, Si, etc., on the optical thin films, is provided with an intermediate layer composed of any of Al, Ti, Si, Nb, Cr, Cu, Mg, Ta, or Zr at

5. 发明专利

JPH08296070A DRY ETCHING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JPH08296070A
公开(公告)日：1996-11-12
申请号：JP12047695
申请日：1995-04-21
申请人： ULVAC CORP
发明人： TAKEI HIDEO , KAWAMURA HIROAKI , NAKAMURA KYUZO , KURODA TAKAHIRO , OTA YOSHIFUMI
IPC分类号： C23F4/00 , H01L21/3065
摘要： PURPOSE: To provide a technology capable of obtaining a taper shaped aluminum wiring large in etching rate and selection ratio. CONSTITUTION: The taper shaped aluminum wiring is formed since a dry etching is executed while forming a protective layer at a sidewall of a resist film when a desired part of an aluminum thin film is removed by etching with a plasma of an etching gas consisting essentially of the first reaction gas constituted of one or more kind selected from between a gaseous boron triiodide and a gaseous hydrogen iodide and the second reaction gas constituted of one or more kind gas selected from among gaseous boron trichloride, gaseous chlorine and gaseous silicon tetrachloride. A controlling property of a substrate temp. is good when an ion asist gas in the etching gas is used as a heat exchange gas between a cathode and a substrate.

6. 发明专利

JPH0693443A METHOD AND DEVICE FOR FILM-FORMING THIN FILM RESISTOR 失效
公开(公告)号：JPH0693443A
公开(公告)日：1994-04-05
申请号：JP24484592
申请日：1992-09-14
申请人： ULVAC CORP
发明人： MOMONO TAKESHI , OTA YOSHIFUMI , MATSUMOTO MASAHIRO , KAWAMURA HIROAKI , IKUTA YOSHITANE , TAKEI HIDEO , NAKAMURA KYUZO
IPC分类号： C23C14/08 , C23C14/44 , H01C7/00 , H01C17/12
摘要： PURPOSE:To provide a film forming method and device capable of improving the dispersion of resistance value of a thin film resistor to be used as an output element for an OA equipment and a video printer, etc. CONSTITUTION:This method is characterized by forming the film, while a plus bias voltage of >=0 V and

7. 发明专利

JPH0475774B2 失效
公开(公告)号：JPH0475774B2
公开(公告)日：1992-12-01
申请号：JP18542887
申请日：1987-07-27
申请人： ULVAC CORP
发明人： KONDO HITOSHI , KAWAMURA HIROAKI
IPC分类号： B01J12/02 , B01J19/00 , B01J19/08 , B22F9/16 , C01B21/068 , C23C14/24 , C23C16/46

8. 发明专利

JPH0377125B2 失效
公开(公告)号：JPH0377125B2
公开(公告)日：1991-12-09
申请号：JP27071584
申请日：1984-12-24
申请人： ULVAC CORP
发明人： KONDO HITOSHI , KAWAMURA HIROAKI
IPC分类号： C01B31/30 , C01B31/36

9. 发明专利

JPH01147050A FILM FORMATION 失效
公开(公告)号：JPH01147050A
公开(公告)日：1989-06-08
申请号：JP30339287
申请日：1987-12-02
申请人： ULVAC CORP
发明人： KAWAMURA HIROAKI
IPC分类号： C23C4/12 , C23C4/18
摘要： PURPOSE:To form a minute film on a substrate made of easily denaturizable superfine powder and also to simplify a film forming process by generating superfine powder with arc plasma having flame imparted with directivity in a vacuum chamber and intactly carrying it on the substrate and sintering it thereon. CONSTITUTION:The nozzle 7 of a water-cooled cathode 8 is slightly titled for an anode 10 and gaseous Ar jet which is fed through an introduction pipe 6 and the nozzle 7 and allowed to collide against the anode 10 is imparted with directivity and substrate 11 made of an Si plate is arranged to the front part thereof and Ar pressure in a vacuum chamber 1 is held at prescribed value and arc discharge is generated between the cathode 8 and the anode 10. The above-mentioned discharge is made to a plasma jet shape by action of the nozzle 7 and an Si block 18 placed on the anode 10 is efficiently dissolved thereby. Gaseous NH3 is introduced through an introduction pipe 13 and superfine Si powder is generated. Superfine Si powder is carried in accompany with the flame 19 of the plasma jet and deposited on the substrate 11. It is heated by the flame 19 and a heater 12 and both nitrification reaction and sintering reaction are advanced and thereby a silicon nitride film can be formed.

10. 发明专利

JPS61151014A PRODUCTION OF ULTRAFINE POWDER OF METALLIC CARBIDE 失效
公开(公告)号：JPS61151014A
公开(公告)日：1986-07-09
申请号：JP27071584
申请日：1984-12-24
申请人： ULVAC CORP
发明人： KONDO HITOSHI , KAWAMURA HIROAKI
IPC分类号： C01B31/30 , C01B31/36
摘要： PURPOSE:To obtain the titled ultrafine powder efficiently and economically with a small amount of heat energy, by forming a mixture of a metallic carbide subliming at a high temperature, a metal and carbon to give a porous solid material having specific relative density, and vaporizing the solid material by vaporization method in gas. CONSTITUTION:Metallic Si powder is blended with about 2-30wt% carbon powder uniformly, put in a crucible made of boron nitride, heated up to the melting point of Si in vacuum, to form the porous solid material 7 consisting of a metallic carbide subliming at high temperature, metallic Si and carbon, having

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式