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    • 1. 发明专利
    • SUPERCONDUCTIVE MAGNET
    • JPS5873104A
    • 1983-05-02
    • JP17149381
    • 1981-10-28
    • JAPAN ATOMIC ENERGY RES INSTHITACHI LTD
    • SHIMAMOTO SUSUMUNISHI MASATAKAOGATA HISANAOFUJIOKA KAZUMASASHIRAKU YOSHINORIYAGI YOSHIOMI
    • H01F6/06H01F6/00H01F6/02
    • PURPOSE:To obtain a compact and stable superconductive magnet by a method wherein insulating materials are fixed to the circumference of compound superconductive conductors and lubricating materials are applied to the outsides of the insulating materials or low friction spacers are positioned for winding. CONSTITUTION:In layers composed by winding compound superconductors, interlayer insulating materials 3, such as glass fiber inserted epoxy resin, cloth inserted phenol resin, are buried in and fixed to the suitable places at the layer sides of stabilizing materials 2 and spacers 4 are inserted and positioned between the spaces facing these interlayer insulating materials 3. Electromagnetic force acting on the layers is transferred to the conductors through the interlayer insulating materials 3 and the spacers 4. Meanwhile, in the spaces between conductor turns, interturn insulating materials 5 are fixed to the insides of the turns of the stabilizing materials 2 and spacers 6 such as ethylene tetrafluoride having low friction coefficient are inserted and positioned at the middle of the interturn insulating materials 5. This does not generate friction heat involved in conductor transition on the surfaces of the conductors and a compact and stable magnet can be obtained.
    • 3. 发明专利
    • SINGLE CRYSTAL PULLING UP DEVICE
    • JPH07330480A
    • 1995-12-19
    • JP13010894
    • 1994-06-13
    • HITACHI LTD
    • FUJIOKA KAZUMASASUZUKI KAZUYA
    • C30B15/00H01L21/208
    • PURPOSE:To efficiently discharge evaporated gaseous SiO and to prevent falling of the insoluble particles of the SiO near to a growth boundary and transition of a crystal by providing the outer peripheral surface side of the crystal with a purging tube and constituting this purging tube in such a manner that its front end position satisfies specific conditions. CONSTITUTION:This single crystal pulling up device is constituted by disposing a carbon crucible 3 in a pulling up device 1 subjected to a pressure reduction and a quartz crucible 2 on the inner side thereof. A silicon raw material is loaded into this quartz crucible 2. The silicon raw material is melted by a carbon heater 4 and a seed crystal 8 is brought into contact with a silicon melt 7. The silicon single crystal 6 is then pulled up. The following constitution is added to the device described above: The outer peripheral side of the silicon single crystal 6 is provided with the purging tube 12. The purging tube 12 is so constituted that its front end position is approximately aligned (L0 is nearly equal to L) to the top end position of the wall of the quartz crucible 2 before the transition of the crystal begins.
    • 7. 发明专利
    • MOLECULAR BEAM EPITAXY SYSTEM
    • JPS63241920A
    • 1988-10-07
    • JP7406487
    • 1987-03-30
    • HITACHI LTD
    • FUJIOKA KAZUMASAKANBARA HIDEAKITAKAHASHI KUNIHIROTAKAHASHI NUSHITOTAMURA NAOYUKI
    • H01L21/26H01L21/203
    • PURPOSE:To accurately measure the temperature of a substrate independent of the emissivity by placing a radiation thermometer and a black body radiation source at symmetrical positions relative to a perpendicular to the substrate surface, and measuring the temperature of the substrate. CONSTITUTION:Within a vacuum cell 1, a substrate 2 is bonded to a susceptor 3, which is attached to a sample rotation holder 4 to which a heater 5 and a thermocouple 6 are fixed. A radiation thermometer 8a for detecting a plurality of wavelengths and a black body radiation source 11 provided with a thermocou ple 12 and a heater 13 are symmetrically placed relative to a perpendicular 14 to the substrate 2 surface, forming an angle of theta. If, here, for the heat am ount ratio of the plurality of wavelengths detected by the thermometer 8a, the temperature T of the radiation source 11 is calculated so that the subtrac tion value of the permeability ratio of a window 7 also of a plurality of wavelengths becomes the heat amount ratio of the black body radiation at the temperature T, it is calculated as the temperature of the substrate irrespec tive of the emissivity of the substrate 2.
    • 8. 发明专利
    • VACUUM DEPOSITION DEVICE
    • JPS62199769A
    • 1987-09-03
    • JP3922886
    • 1986-02-26
    • HITACHI LTD
    • OGATA HISANAONEMOTO TAKEOFUJIOKA KAZUMASATAMURA NAOYUKIKANAI NORIO
    • C23C14/50C23C14/56
    • PURPOSE:To permit substrate exchange while maintaining a substrate cooling means at a low temp. in vacuum environment by inserting a susceptor holding the substrate from a preliminary vacuum chamber into a vacuum vessel, subjecting the substrate to vapor deposition while cooling the susceptor and exchanging the substrate in the preliminary vacuum chamber. CONSTITUTION:The susceptor 10 attached with the substrate 35 is inserted into the preliminary vacuum chamber 6 and is conveyed through a sluice valve 5 into the lower part of a cooling stage 39 by an introducing mechanism 8. The susceptor 10 is then held by a bayonet 37 and a refrigerant 13 is introduced into the chamber 14. The cooling state 39 is pressed to the susceptor 10. The inside of the chamber 14 is evacuated to a vacuum when the vapor deposition operation is finished in this state. The introducing mechanism 8 is set to the susceptor 10 and the susceptor 10 is removed from the bayonet 37 and is retracted into the preliminary vacuum chamber 6, then the valve 5 is closed. The preliminary vacuum chamber is opened to the atm. and the susceptor 10 is taken out of the chamber and thereafter th substrate 35 is exchanged. The exposure of the inside 4 of the vacuum vessel 1 to the arm. is thereby averted.