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1. 发明专利

JP2510544B2 失效
公开(公告)号：JP2510544B2
公开(公告)日：1996-06-26
申请号：JP30124686
申请日：1986-12-19
申请人： HITACHI LTD
发明人： MORI MITSUHIRO , KURODA TAKARO , YANOKURA EIJI , TAKAHASHI SUSUMU , SEKINE KENJI
IPC分类号： H01L23/52 , H01L21/338 , H01L21/48 , H01L23/00 , H01L23/34 , H01L23/36 , H01L29/812 , H03F3/60

2. 发明专利

JPH0846298A SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH0846298A
公开(公告)日：1996-02-16
申请号：JP17641094
申请日：1994-07-28
申请人： HITACHI LTD
发明人： NIWA ATSUKO , OTOSHI SO , KURODA TAKARO , TSUJI SHINJI
IPC分类号： H01L33/06 , H01L33/16 , H01L33/28 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PURPOSE:To obtain excellent characteristics such as low threshold value, high efficiency, high output etc., by a method wherein a quantum well active layer is formed on a specific surface thereof while the well layer in the quantum well active layer is composed of a material having lattice constant, in the state of imposing no biaxial stress, larger than that of a semiconductor substrate. CONSTITUTION:An active layer 4 is formed on a surface having slippage not exceeding 5'' from (112) surfaced P type InP substrate 1 surface. Furthermore, the active layer 4 has multiquantum well structure alternately and five periodically lamination-formed of I type In1-y AlyAs barrier layer 11 and I type In1-xGaxAs well layer 12. At this time, the compression ratio x of In1-xGaxAs well layer 12 is set up so that the slippage DELTAa/a of lattice constant may not exceed 5% assuming the lattice constant of InP as (a) having biaxial compression strain. On the other hand, the composition ratio of the barrier layer 11 is set up so that the lattice constant may coincide with that of InP. Accordingly, the status density can be reduced while maintaining a large energy difference between subbands, thereby enabling the element characteristics to be improved.

3. 发明专利

JPH07118540B2 失效
公开(公告)号：JPH07118540B2
公开(公告)日：1995-12-18
申请号：JP23827893
申请日：1993-09-24
申请人： HITACHI LTD
发明人： KURODA TAKARO , SHIRAKI YASUHIRO
IPC分类号： H01L29/812 , H01L21/20 , H01L21/338 , H01L29/778

4. 发明专利

JPH06120556A PHOTODETECTOR 失效
公开(公告)号：JPH06120556A
公开(公告)日：1994-04-28
申请号：JP2093491
申请日：1991-02-14
申请人： HITACHI LTD
发明人： TAKATANI SHINICHIRO , KURODA TAKARO , TSUJI KAZUTAKA
IPC分类号： H01L31/107
摘要： PURPOSE:To realize a photodetector, provided with a small excess multiplying noise factor F, a large S/N ratio, high quantum efficiency same as an APD so far and sensibility in a desired wave-length band. CONSTITUTION:A photodetector is provided with a transforming layer 24, formed on a III-V compound semiconductor 1, a solid layer 2, laminated on the transforming layer 24 and mainly constituted of selenium, and voltage impressing means 3, 4, generating an electric field on the solid layer mainly constituted of selenium, while avalanche multiplication is caused by pouring a positive hole 6 generated in the compound semiconductor 1 into the solid layer 2. According to this method, a photodetector, provided with a large excess multiplying noise factor F and a high sensibility in a desired wave length band, can be realized by the large coefficient of ionization rate of selenium, the prevention of recombination effected by the transforming layer 24 and the high quantum efficiency of the III-V compound semiconductor.

5. 发明专利

JPH0697573A SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0697573A
公开(公告)日：1994-04-08
申请号：JP24450092
申请日：1992-09-14
申请人： HITACHI LTD
发明人： OKA SATOHIKO , YAMASHITA SHIGEO , KURODA TAKARO , ONO YUICHI
IPC分类号： H01S5/00 , H01S5/042 , H01S3/18
摘要： PURPOSE:To lower the threshold value than the prior art one even if an active layer width is specified to be in submicron order by a method wherein a photowaveguide is provided so that the whole periphery or at least both sides of an active layer may come into contact with a light confinement layer. CONSTITUTION:A photowaveguide 20 is composed of an InGaAsP active layer 1 and an InGaAsP light confinement layer 2 encircling the In GaAsP active layer 1. The photowaveguide 20 is encircled by the InP of a p-InP substrate 9, an n-InP 6 and a p-InP current block layer 7. A carrier is implanted in InGaAsP active layer 1 by impressing the space between an n electrode 3 and a p electrode 10 with normal bias so as to oscillate the laser by the implanted current exceeding the threshold value. In such a constitution, the current is to be strangulated by the p-InP current block layer 7 and an n-InP current block layer 8 so as to be concentrated in the InGaAsP active layer 1.

6. 发明专利

JPH0422033B2 失效
公开(公告)号：JPH0422033B2
公开(公告)日：1992-04-15
申请号：JP15813682
申请日：1982-09-13
申请人： HITACHI LTD
发明人： KURODA TAKARO , KAJIMURA TAKASHI , KASHIWADA YASUTOSHI , KAYANE NAOKI , OOCHI HIROBUMI , OOTOSHI SO
IPC分类号： H01S5/00 , H01S5/223

7. 发明专利

JPH04106984A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04106984A
公开(公告)日：1992-04-08
申请号：JP22261490
申请日：1990-08-27
申请人： HITACHI LTD
发明人： KURODA TAKARO , MIYAZAKI TAKAO , TANAKA SHIGEHISA , NAKAMURA HITOSHI , ISHIDA KOJI
IPC分类号： H01L31/108
摘要： PURPOSE:To prevent concentration of an electric field at the end of an electrode by providing an n-type conductive layer 32 on an undoped light absorption layer, and so setting the thickness of the layer that the doping concentration and a sheet carrier density become specific values. CONSTITUTION:In a light receiving semiconductor device in which a light absorption layer 31 and layers 21 each having a large band gap for forming a double hetero structure to be disposed on and underneath the layer 31 are formed on a semi-insulating semiconductor substrate 1, an n-type doped layer 32 is provided on the front surface side of the layer 31, and an interdigital Schottky type electrode 22 is provided on the uppermost surface, the doping concentration of the layer 32 is set to 1X10 cm or less, and the thickness of an n-type layer is so set that the carrier density falls within 1-0.5X10 cm . A superlattice layer containing InP as a semi-insulating board 1, Inlays as the layers 31, 32, and InAlAs or InAlAs as the layer 21 for forming a double hetero structure is employed.

8. 发明专利

JPH03129781A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03129781A
公开(公告)日：1991-06-03
申请号：JP26612789
申请日：1989-10-16
申请人： HITACHI LTD
发明人： KURODA TAKARO , NAKAMURA HITOSHI , MIYAZAKI TAKAO , ISHIDA KOJI
IPC分类号： H01L31/108
摘要： PURPOSE:To enable formation of an element, necessary for manufacture of photosensitive OEIC for optical fiber communication, through simple and established technology by providing a semiconductor photodetector with a sensibility of wavelength in the range of 1.3-1.55mum through utilization of inner photoelectric effect of a Schottky diode. CONSTITUTION:An n-GaAs layer 114 is removed through etching to expose an undoped GaAs 113 thus forming an optical wave guide 101 and a Shottky photodiode 102. In a photodetecting section, the GaAs layer 112 is made thin to provide a rib type optical wave guide thus forming a Schottky metal 121 such as Al on the top section of a rib. Signal light is coupled from a single mode optical fiber 404, subjected to ball head machining, to the optical wave guide of an optical fiber 416. Light from a local oscillation semiconductor laser 405 for heterodyne light detection is coupled with the optical wave guide 417. Incident light from the optical wave guides 416, 417 are mixed through a 1:1 optical coupler 418 then they enter into a Shottky photodiodes 425, 426 equally and absorbed.

9. 发明专利

JPH021185A PHOTOELECTRIC INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH021185A
公开(公告)日：1990-01-05
申请号：JP12817588
申请日：1988-05-27
申请人： HITACHI LTD
发明人： MIYAZAKI TAKAO , KURODA TAKARO , ONO TOSHIHIRO , FUKUZAWA TADASHI
IPC分类号： H01L27/095 , H01L27/14 , H01L27/146 , H01L27/148 , H01L27/15 , H01L29/80 , H01L31/12
摘要： PURPOSE:Not only to simplify a manufacturing process but also to make a degree of integration large by a method wherein impurity is introduced to form a deep level in a region of a first and a second semiconductor layer other than the region of a field effect transistor. CONSTITUTION:An undoped InAlAs layer 2, an n-type InGaAs layer 3, and an undoped InAlAs layer 5 are epitaxially grown on a semi-insulating substrate 1 in succession. Next, a region to be a field effect transistor is covered with a photoresist, and oxygen ions are implanted. Then, a heat treatment is performed after the photoresist is removed, a source.drain electrode 6 and a gate electrode 7 are formed on a field effect transistor region B, and a cathode. anode electrodes 8 are built on a photodetecting diode region A. By these processes, as the same semiconductor layer may be formed on a photodetecting diode region and a field effect transistor region, so that not only a manufacturing process becomes simple but also a mesa etching can be dispensed with, consequently the formation of a fine pattern is facilitated and a degree of integration can be large.

10. 发明专利

JPS6343913B2 失效
公开(公告)号：JPS6343913B2
公开(公告)日：1988-09-01
申请号：JP23111785
申请日：1985-10-18
申请人： HITACHI LTD
发明人： KAJIMURA TAKASHI , KURODA TAKARO , YAMASHITA SHIGEO , NAKAMURA MICHIHARU , UMEDA JUNICHI
IPC分类号： H01S5/00 , H01L21/208

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