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1. 发明专利

JP2009294223A Biosensor 有权
标题翻译：生物传感器
公开(公告)号：JP2009294223A
公开(公告)日：2009-12-17
申请号：JP2009214634
申请日：2009-09-16
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： KANG HEE BOK , JEONG DONG YUN , LIM JAE HYOUNG , PARK YOUNG JIN , LEE KYE NAM , JANG IN WOO , LEE SEAUNG SUK , SANG-SOK KIM
IPC分类号： G01N27/22 , G01R33/09 , C12M1/42 , G01N27/327 , G01N27/72 , G01N27/76 , G01N33/49 , G01N37/00 , G11C5/06 , G11C11/00 , H01L27/22 , H01L43/08
CPC分类号： G01N27/76 , G01N33/49 , G01R33/093 , G01R33/1284 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1693 , H01F10/325
摘要： PROBLEM TO BE SOLVED: To separate a peripheral substance or the like constituted of a plurality of respectively different components into electrical components according to a dielectric constant to analyze the same. SOLUTION: This biosensor is equipped with a transistor element T wherein a gate terminal is connected to a wordline and a drain terminal is connected to a sensing bit line and a sensing capacitor S - C wherein a first electrode is connected to a sensing plate line and a second electrode is connected to the source terminal of the transistor element T. Different dielectric constants are sensed according to the electrostatic capacity of the sensing capacitor S - C, and the sensing voltage outputted through the transistor element T has mutually different values. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：根据介电常数将由多个分别不同的组分构成的外围物质等分离成电气部件以进行分析。解决方案：该生物传感器配备有晶体管元件T，其中栅极端子连接到字线，漏极端子连接到感测位线和感测电容器S，其中a 第一电极连接到感测板线并且第二电极连接到晶体管元件T的源极端子。根据感测电容器的静电电容C来检测不同的介电常数，并且通过晶体管元件T输出的感测电压具有相互不同的值。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009294222A Sensing cell array utilizing biosensor 有权
标题翻译：感应细胞阵列利用生物传感器
公开(公告)号：JP2009294222A
公开(公告)日：2009-12-17
申请号：JP2009214614
申请日：2009-09-16
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： KANG HEE BOK , JEONG DONG YUN , LIM JAE HYOUNG , PARK YOUNG JIN , LEE KYE NAM , JANG IN WOO , LEE SEAUNG SUK , SANG-SOK KIM
IPC分类号： G01N27/76 , G01R33/09 , C12M1/42 , G01N27/22 , G01N27/327 , G01N27/72 , G01N33/49 , G01N37/00 , G11C5/06 , G11C11/00 , H01L27/22 , H01L43/08
CPC分类号： G01N27/76 , G01N33/49 , G01R33/093 , G01R33/1284 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1693 , H01F10/325
摘要： PROBLEM TO BE SOLVED: To separate a peripheral substance or the like constituted of a plurality of respectively different components into electrical components according to susceptibility or a dielectric constant to analyze the same. SOLUTION: A magnetizing pair sensor equipped with an MTJ or GMR element, a magnetic resistance sensor equipped with the MTJ element and a magnetic substance, a dielectric constant sensing sensor equipped with a sensing capacitor and a switching element, a magnetizing hole sensor equipped with the MTJ or GMR element, a current line, a variable ferromagnetic layer, and the switching element or a giant magnetic resistance sensor constituted of the GMR element, the switching element and the magnetic substance are arranged to a biosensor chip so as to form a sensing cell array having a plurality of rows and column shapes. Each different susceptibilities or dielectric constants are sensed according to the components of the peripheral substance showing respectively different characteristics and the dimensions of the components to separate the peripheral substance desired to be analyzed into electrical components. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：根据磁化率或介电常数将由多个分别不同的组分构成的外围物质等分离成电气部件以进行分析。
解决方案：配备有MTJ或GMR元件的磁化对传感器，配备有MTJ元件和磁性物质的磁阻传感器，配备有感测电容器和开关元件的介电常数传感传感器，磁化孔传感器配备有MTJ或GMR元件，电流线，可变铁磁层，以及由GMR元件，开关元件和磁性物质构成的开关元件或巨磁电阻传感器布置在生物传感器芯片上，以形成具有多个行和列形状的感测单元阵列。根据显示分别具有不同特性和部件的尺寸的周边物质的组分来感测每种不同的磁敏度或介电常数，以将期望分析的外围物质分离成电气部件。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2003347518A Magnetic ram 审中-公开
标题翻译：磁性RAM
公开(公告)号：JP2003347518A
公开(公告)日：2003-12-05
申请号：JP2002376938
申请日：2002-12-26
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクター
发明人： JANG IN WOO , PARK YOUNG JIN , LEE KYE NAM , KIM CHANG SHUK
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L27/22 , H01L29/94 , H01L31/119 , H01L43/08
CPC分类号： H01L27/228 , B82Y10/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic RAM achieving high integration of elements.
SOLUTION: The magnetic RAM is so constituted as to comprise a pair of first word lines 53 formed above a semiconductor substrate 51; impurity junction regions 55-1, 55-2 formed in the semiconductor substrate 51; a ground line 61 connected to the impurity junction region 55-1; a pair of connecting layers 67 connected to the impurity junction regions 55-2, respectively; a pair of MTJ cells 69 provided in contact, respectively, with the pair of connecting layers 67; a pair of bit lines 74 provided in contact, respectively, with the pair of MTJ cells 69; a metal wiring contact plug 75 provided with some distance from the ground line 61; a second word line 65 provided in contact with the lower end of the metal wiring contact plug 75; and a metal wiring 77 formed in the direction crossing the bit line 73 squarely.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供实现元件的高集成度的磁性RAM。解决方案：磁性RAM被构造成包括形成在半导体衬底51上方的一对第一字线53; 在半导体衬底51中形成的杂质结区55-1,55-2; 连接到杂质结区55-1的接地线61; 分别连接到杂质结区55-2的一对连接层67; 分别与一对连接层67接触地设置的一对MTJ单元69; 分别与一对MTJ单元69接触地设置的一对位线74; 设置有距地线61一定距离的金属配线接触插塞75; 设置成与金属布线接触插塞75的下端相接触的第二字线65; 以及在与位线73正交的方向上形成的金属布线77。版权所有（C）2004，JPO

4. 发明专利

JP2004297039A Method of forming mtj cell of magnetic ram 有权
标题翻译：形成磁性RAM的MTJ细胞的方法
公开(公告)号：JP2004297039A
公开(公告)日：2004-10-21
申请号：JP2003430969
申请日：2003-12-25
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクター
发明人： LEE KYE NAM , JANG IN WOO , PARK YOUNG JIN
IPC分类号： H01L27/105 , G11C11/15 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method of forming an MTJ cell which is capable of preventing a reduction in the MR ratio due to the occurrence of a magnetization probe failure in a magnetic body by carrying out a double annealing process while a high magnetic field and a low magnetic field are alternately applied in a process of forming the MTJ cell having a synthetic-antiferromagnetic layer structure so as to improve a magnetic resistance ratio.
SOLUTION: A double annealing process is carried out to remove a magnetization probe failure while a low magnetic field is successively applied in a state wherein a magnetization probe failure occurs when a high magnetic field is applied in a process of forming the MTJ cell of a magnetic RAM having a SAF structure, so that the MTJ cell of the magnetic RAM improved in uniformity in the direction of spin can be formed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形成MTJ电池的方法，该MTJ电池能够通过进行双重退火处理来防止由于磁体中的磁化探针故障而导致的MR比的降低，同时在形成具有合成反铁磁层结构的MTJ电池的工艺中交替地施加高磁场和低磁场，以提高磁阻比。解决方案：当在形成MTJ电池的过程中施加高磁场时，在发生磁化探针故障的状态下连续施加低磁场时，进行双重退火处理以除去磁化探针故障具有SAF结构的磁性RAM，从而可以形成磁性RAM的MTJ单元在旋转方向上的均匀性。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004205495A Biosensor and sensing cell array utilizing the same 有权
公开(公告)号：JP2004205495A
公开(公告)日：2004-07-22
申请号：JP2003302881
申请日：2003-08-27
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクター
发明人： KANG HEE BOK , JEONG DONG YUN , LIM JAE HYOUNG , PARK YOUNG JIN , LEE KYE NAM , JANG IN WOO , LEE SEAUNG SUK , SANG-SOK KIM
IPC分类号： G01R33/09 , C12M1/42 , G01N27/22 , G01N27/327 , G01N27/72 , G01N27/76 , G01N33/49 , G01N37/00 , G11C5/06 , G11C11/00 , H01L27/22 , H01L43/08
CPC分类号： G01N27/76 , G01N33/49 , G01R33/093 , G01R33/1284 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1693 , H01F10/325
摘要： PROBLEM TO BE SOLVED: To analyze a surrounding substance or the like composed of a plurality of different components, by separating electrical components which follow magnetic susceptibility or dielectric constant. SOLUTION: A magnetization pair sensing sensor having an MTJ (magnetic tunnel junction) or a GMR (giant magnetoresistance) element, magnetoresistive sensor having an MTJ element and magnetic substance, dielectric constant sensing sensor having a sensing capacitor and switching element, magnetization hole sensing sensor having an MTJ element or a GMR element, current line, variable ferromagnetic layer, and switching element, or giant magnetoresistive sensor composed of GMR element, switching element, and magnetic substance is disposed on a biosensor chip with a sensing cell array, having the form of a plurality of rows and columns. The magnetic susceptibility or the dielectric constant which differs according to the components of the surrounding substance exhibiting respective different characteristics, and the magnitudes of the components is sensed so that the components of the surrounding substance to be analyzed are separated into the electrical components. COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明专利

JP2004214600A Forming method of magnetic ram 审中-公开
标题翻译：磁性RAM的形成方法
公开(公告)号：JP2004214600A
公开(公告)日：2004-07-29
申请号：JP2003188138
申请日：2003-06-30
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクター
发明人： LEE KYE NAM , JANG IN WOO
IPC分类号： H01L27/105 , G11C11/15 , H01L21/3213 , H01L21/8246 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L21/32139
摘要： PROBLEM TO BE SOLVED: To improve characteristics and reliability of an element by simplifying a process by pattering an MTJ cell and a connection layer simultaneously and by preventing generation of metallic polymer or the like by carrying out an etching process by using an insulating film spacer and a hard mask as a mask instead of a photosensitive film pattern. SOLUTION: The method comprises a step for exposing a tunneling barrier layer by etching the hard mask layer and a magnetic free layer in photo-etching process using an MTJ cell mask, a step for forming an insulating film spacer in a side wall of the hard mask layer and the magnetic free layer by anisotropically etching an insulating film and a step for forming the MTJ cell and the connection layer by etching the tunneling barrier layer, the magnetic pinned layer and a metallic layer for a connection layer by using the insulating film spacer and the hard mask layer as a mask. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了通过简化通过使MTJ单元和连接层同时进行的处理，并且通过使用绝缘体进行蚀刻处理来防止金属聚合物等的产生来提高元件的特性和可靠性膜间隔物和硬掩模作为掩模而不是感光膜图案。解决方案：该方法包括通过使用MTJ电池掩模在光蚀刻工艺中蚀刻硬掩模层和无磁性层来暴露隧道势垒层的步骤，在侧壁中形成绝缘膜间隔物的步骤通过各向异性蚀刻绝缘膜的硬掩模层和无磁性层，以及通过使用所述连接层蚀刻隧道势垒层，磁性被钉扎层和连接层金属层来形成MTJ电池和连接层的步骤绝缘膜间隔物和硬掩模层作为掩模。版权所有（C）2004，JPO＆NCIPI

7. 发明专利

JP2005045197A Method of forming mtj cell of magnetic ram 有权
标题翻译：形成磁性RAM的MTJ细胞的方法
公开(公告)号：JP2005045197A
公开(公告)日：2005-02-17
申请号：JP2003430918
申请日：2003-12-25
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクター
发明人： LEE KYE NAM , JANG IN WOO , OH SANG HYUN , YANG YOUNG HO , SEONG JIN YONG , KO SHAKUKEI , KIM JIN GU
IPC分类号： H01L27/105 , H01L21/302 , H01L21/461 , H01L21/82 , H01L21/8239 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a method of forming the MTJ cell of a magnetic RAM making free magnetic layers amorphous and oxidizing this to inhibit the generation of etching residues.
SOLUTION: Instead of a conventional edging process of free magnetic layers, a halo ion implant process is utilized to make the exposed portion of the free magnetic layer constituting an MTJ substance layer amorphous, and the portion that is made amorphous is oxidized by the following heat process.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形成磁性RAM的MTJ单元的方法，其使自由磁性层成为无定形的并将其氧化以抑制蚀刻残留物的产生。解决方案：代替自由磁性层的常规磨边工艺，使用光晕离子注入工艺来使构成MTJ物质层的自由磁性层的暴露部分成为无定形，并且被制成无定形的部分被以下加热过程。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2003347519A Method for manufacturing magnetic ram 审中-公开
标题翻译：制造磁性RAM的方法
公开(公告)号：JP2003347519A
公开(公告)日：2003-12-05
申请号：JP2002377522
申请日：2002-12-26
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクター
发明人： LEE KYE NAM , PARK YOUNG JIN , KIM CHANG SHUK , JANG IN WOO , KEI KI
IPC分类号： H01L27/105 , G11C11/15 , H01L21/033 , H01L21/8246 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L21/0331 , Y10S438/95
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetic RAM with device characteristics and reliability improved by securing an MTJ cell region without damage to the lead layer below the MTJ layer.
SOLUTION: The method for manufacturing a magnetic RAM includes a step of forming a lower lead layer 43 on the upper surface of a first interlayer insulating film 41, formed on a semiconductor substrate (not illustrated) having a cell region 300 and a peripheral circuit region 400, a step of forming a second interlayer insulating film 45 on the lower lead layer 43, a step of etching for the exposure of the lower lead layer 43 in the cell region 300, a step of forming an MTJ layer 49 on the exposed lower lead layer 43 and on the second interlayer insulating film 45 in the peripheral circuit region 400, so thick as to allow the exposure of part of the side walls of the second interlayer insulating film 45, a process of lifting off the second interlayer insulating 45 in the peripheral circuit region 400 and the MTJ layer 49 on the second interlayer insulating film 45, and a step of forming an upper lead layer bit line 59 to be connected to the MTJ layer 49.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种通过固定MTJ单元区域而不损坏MTJ层下方的引线层来制造具有器件特性和可靠性的磁性RAM的方法。解决方案：制造磁性RAM的方法包括在形成在具有单元区域300的半导体衬底（未示出）上的第一层间绝缘膜41的上表面上形成下引线层43的步骤，外围电路区域400，在下引线层43上形成第二层间绝缘膜45的步骤，在单元区域300中对下引线层43进行蚀刻的步骤，形成MTJ层49的步骤露出的下引线层43和周边电路区域400中的第二层间绝缘膜45上，使第二层间绝缘膜45的一部分侧壁露出的厚度变厚，在第二层间绝缘膜45上的外围电路区域400和MTJ层49中绝缘45，以及形成要连接到MTJ层49的上引线层位线59的步骤。（C） 2004年，JPO

9. 发明专利

JP2003338610A Magnetic ram 审中-公开
标题翻译：磁性RAM
公开(公告)号：JP2003338610A
公开(公告)日：2003-11-28
申请号：JP2003006845
申请日：2003-01-15
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクター
发明人： JANG IN WOO , PARK YOUNG JIN , LEE KYE NAM , KIM CHANG SHUK , KEI KI
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16
摘要： PROBLEM TO BE SOLVED: To provide an MRAM in which an element can be easily made highly integrated and whose manufacturing process can be simplified.
SOLUTION: The MRAM is provided with a substrate 61 where source/drain regions 62 and 63 and a gate electrode 6 being a word line are formed, contacts 67 and 69 formed on upper faces of the regions 62 and 63, a common line 79 which is electrically connected to the contact 67 through a plug 75, a metal line 81 which is electrically connected to the contact 69 through a plug 77, a connection film 89 which is electrically connected to a metal line 81 through a plug 87 and is formed so that it is overlapped with a region above the common line 79, an MTJ element 99 formed on the upper face of the connection film 89 in the region above the common line 79, and a bit line 103 formed on the upper face of the element. In the case of data reading, a voltage of a ground level is applied to the common line 79. In the case of data writing, a constant quantity of current is supplied to it.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种MRAM，其中元件可以容易地制成高度集成并且其制造过程可以被简化。解决方案：MRAM设置有形成源极/漏极区域62和63以及作为字线的栅电极6的衬底61，形成在区域62和63的上表面上的触点67和69，共同的线79，其通过插头75电连接到触点67;金属线81，其通过插头77电连接到触点69;连接膜89，其通过插头87与金属线81电连接;以及形成为与公共线79上方的区域重叠，形成在公共线79上方的连接膜89的上表面上的MTJ元件99和形成在公共线79的上表面上的位线103 元素。在数据读取的情况下，对公共线79施加接地电平的电压。在数据写入的情况下，向其提供恒定电流量。版权所有（C）2004，JPO

10. 发明专利

JP2003197879A WRITING METHOD FOR MAGNETIC RAM USING BIPOLAR JUNCTION TRANSISTOR 审中-公开
公开(公告)号：JP2003197879A
公开(公告)日：2003-07-11
申请号：JP2002271355
申请日：2002-09-18
申请人： HYNIX SEMICONDUCTOR INC
发明人： SANG-SOK KIM , KANG HEE BOK , KEI KI , JANG IN WOO
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a writing method for a magnetic RAM using a bipolar junction transistor. SOLUTION: The writing method is for use with the magnetic RAM using the bipolar junction transistor including: a semiconductor substrate serving as a base of the bipolar junction transistor; an emitter and a collector of the bipolar junction transistor formed in an active region of the semiconductor substrate; an MTJ cell positioned in the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; a word line formed on the MTJ cell; a bit line connected to the collector; and a reference voltage line connected to the emitter. The writing method writes data by applying current from the emitter to the collector, and changing a magnetization direction and a magnetization angle of a free ferromagnetic layer of the MTJ cell by a magnetic field generated due to the current. Current consumption is therefore reducible and then it is thus possible to improve a property and reliability of the semiconductor device. COPYRIGHT: (C)2003,JPO

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