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1. 发明专利

JPS59212189A Brazing filler metal and composite target for x-ray tube 失效
标题翻译：用于X射线管的BRAZING FILLER金属和复合材料目标
公开(公告)号：JPS59212189A
公开(公告)日：1984-12-01
申请号：JP8591283
申请日：1983-05-18
申请人： Hitachi Ltd , Hitachi Medical Corp
发明人： YAMADA TSUNEO , KOYAMA TETSUO , BABA NOBORU , SUWA MASATERU , NAKAGAWA YUUSAKU , ONODERA KIYUUKICHI , SAKAMOTO HIROSHI
IPC分类号： H01J35/10 , B23K35/22 , B23K35/30 , B23K35/32 , C04B37/02
CPC分类号： B23K35/32
摘要： PURPOSE:To provide a brazing filler metal which joins securely a high melting metallic material and graphite by consisting the same of clad foil provided with an Ni or Co layer on the surface of a metallic material of Zr alone, a Zr alloy of the specific compsn. contg. W, Mo, Ni, etc. or Ti, Nb, Ta, etc. CONSTITUTION:This brazing filler metal consists of the clad foil provided with an Ni or Co layer having 0.01-20mum thickness on the surface of one kind of metallic materials such as Zr simple substance, a Zr-W alloy contg.
摘要翻译：目的：提供一种钎料，通过在单独的Zr金属材料的表面上形成具有Ni或Co层的复合箔，将高熔点金属材料和石墨牢固地连接在一起，特定化合物的Zr合金。 contg。 W，Mo，Ni等或Ti，Nb，Ta等。构成：该钎料由在一种金属材料的表面上具有0.01-20μm厚度的Ni或Co层的复合箔组成，作为Zr单体，Zr-W合金。 <= 30wt％W，Zr-Mo合金 <= 30％Mo，Zr-W-Ni合金 <= 30％W和<= 20％Ni，Zr-Mo-Ni合金 <= 30％Mo和<= 20％Ni，或Ti，Nb，Ta等。所述材料牢固地连接高熔点金属材料和石墨。作为用于接合W或其合金，W或其合金/ Mo等的钎料和用于X射线管的旋转阳极的复合靶的石墨，该钎料特别适用。

2. 发明专利

JPS5685831A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5685831A
公开(公告)日：1981-07-13
申请号：JP16150279
申请日：1979-12-14
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , TENNO HIROSHI , BABA NOBORU , ONODERA KIYUUKICHI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To attach an electrode to the semiconductor device without increasing the forward voltage drop by securing W or Mo electrode through Ni, Ti or Cr film onto an Si with a solder containing mainly aluminum. CONSTITUTION:An Ni, Ti or Cr film having preferable adhesive with the Si is substrate, and is heated and bonded to the W or Mo electrode with aluminum solder containing the Si. The Si does not melt in the aluminum alloy solder due to the disposition of the Ni, Ti or Cr film, and provides preferable wettability with the W, Mo and the Ni, Ti or Cr. According to this configuration, since it can prevent the P type conductive regrowing layer, the forward voltage drop of the semiconductor device can be lowered.

3. 发明专利

JPS54142976A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS54142976A
公开(公告)日：1979-11-07
申请号：JP4997178
申请日：1978-04-28
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , SUWA MASATERU , TENNO HIROSHI , ONODERA KIYUUKICHI
IPC分类号： B23K1/00 , H01L21/306 , H01L21/52 , H01L21/60 , H01L29/41
摘要： PURPOSE:To reduce a forward-voltage drop between a Si base body with a partial N-type surface and an electrode by providing the bonding surface if the base body with an infinite number of grooves with a high surface index than the bonding surface and then by bonding the electrode to the surface via Al. CONSTITUTION:In the adhesion surface of the (111) crystal surface of N-type Si base body 11 where a PN junction is formed, an infinite number of grooves are formed by etching by the use of a solution including 5% of sodium hydroxide as its principal constituent. In order to suppress an increase in forward voltage by stopping a regrowth layer from growing, a n -type layer is formed by diffusion on the surfaces of grooves and Al foil 12 is fitted to the surface and then supported by support electrode 13 of Mo or W. Then, the reverse surface is covered with lag 40 made of graphite, and base bady 11 and electrode 13 are bonded together via fused Al foil 12 by heating. Consequently, grooves with a higher surface index than the original (111) surface are made on the bonding surface of n -type. so that an excellent contact surface can be obtained.

4. 发明专利

JPS5248970A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5248970A
公开(公告)日：1977-04-19
申请号：JP12433875
申请日：1975-10-17
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , SUWA MASATERU , ONODERA KIYUUKICHI , SHIMURA TATSUO
IPC分类号： H01L21/52 , H01L21/28 , H01L21/48 , H01L21/58
摘要： PURPOSE:To reduce forward voltage drop when an Si element is connected to a supporting electrode, by forming a required roughed layer and phosphor diffused layer on the soldering surface of the Si element.

5. 发明专利

JPS5747678A Heat-sensitive recording head 失效
标题翻译：感热记录头
公开(公告)号：JPS5747678A
公开(公告)日：1982-03-18
申请号：JP12106480
申请日：1980-09-03
申请人： Hitachi Ltd
发明人： KITA YOSHIAKI , ANDOU HISASHI , SAKAMOTO HIROSHI , ONODERA KIYUUKICHI , HIRATSUKA SHIGETOSHI
IPC分类号： B41J2/335
CPC分类号： B41J2/335
摘要： PURPOSE:To prevent the diffusion of electrode material into heating resistor by making up the electric material of a heat-sensitive recording head of an intermetallic compound which is in solid state at the heating temperature of a heating resistor used and has a specific resistance smaller than the heating resistor. CONSTITUTION:An intermetallic compound to be used as a material for an electrode 6 must meet the two requirements, having a solidity at the heating temperature of a heating resistor 5 and a specific resistance smaller than that of the constituent mateial of the heating resistor 5. Of intermetallic compounds, NiAl has smallest specific resistance and is most suitable for an material for electrode. Thus, the diffusion of the electrode materal into the heating resistor can be prevented, whereby preventing the lowering or local variation of the resistance value of the heating resistor due to the influence of the electrode material.
摘要翻译：目的：为了防止电极材料扩散到加热电阻器中，该方法是通过在所用的加热电阻器的加热温度下形成固态的金属间化合物的热敏记录头的电气材料，并且电阻率小于加热电阻。构成：用作电极6的材料的金属间化合物必须满足两个要求：在加热电阻器5的加热温度下具有坚固性，并且比电阻小于加热电阻体5的组成材料。在金属间化合物中，NiAl具有最小的电阻率，最适用于电极材料。因此，可以防止电极侧向扩散到发热电阻器中，从而防止由于电极材料的影响导致的加热电阻器的电阻值的降低或局部变化。

6. 发明专利

JPS56152263A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56152263A
公开(公告)日：1981-11-25
申请号：JP5434580
申请日：1980-04-25
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , TENNO HIROSHI , MORITA KEIICHI , YAO TSUTOMU , NAITOU MASAMI , BABA NOBORU , ONODERA KIYUUKICHI , NAGANO TAKAHIRO , SATOU FUMIO , YANAGI MITSUO
IPC分类号： H01L29/41 , H01L21/331 , H01L29/73 , H01L29/744
摘要： PURPOSE:To obtain the pressure welding electrode of a GTO having small contact resistance and no short-circuit accident across gates and cathodes by adhering and fixing the electrode and a metal plate through an intermediate layer consisting of an AlSi alloy. CONSTITUTION:The second main electrode 8 and the second metal plate 10 are blazed by Al under an Si substrate 1 formed n type emitters 2, an n type base 4, a p type emitter 5, and a p type base 3. SiO2 films 11, Al evaporated cathode electrodes 6, and gate electrodes 7 are formed on the main surface of a semiconductor layer at the opposite side of the Si substrate 1. An Si film 12 having 5% Al is evaporated on a metal plate 9 consisting of W to place the film 12 on the cathode electrodes 6 for heating and pressure welding. Load will equally be applied as the emitter electrodes and the metal plate 9 are equally adhered and a gate turn-off thyristor (GTO) having no short-circuit across the gates and the cathodes will be obtained.

7. 发明专利

JPS53148969A MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS53148969A
公开(公告)日：1978-12-26
申请号：JP6326877
申请日：1977-06-01
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , SUWA MASATERU , ONODERA KIYUUKICHI , MORITA KEIICHI , MATSUKUMA KUNIHIRO
IPC分类号： H01L21/52 , H01L21/22 , H01L21/58
摘要： PURPOSE:To avoid the increment of the forward voltage drop by Al-soldering W or Mo onto the phosphorus diffusion layer of 3-7X1020 atom/cm , and then Al reacts to Si to cause the crevasse on n-on n+-type Si. No regrowing layer is formed to this creavasse, so the regrowth layer is discontinued. Accordingly, the forward voltage drop is rduced. When the phosphorous density is within the described range, a number of crevasses are formed with easy discontinuation of the regrowth layer. With a lower density of the phosphorus, the number of the crevasse is decreased. When the density is high, no crevasse exists substantially. And the discontinuation ratio is reduced, and the voltage drop is increased.

8. 发明专利

JPS57168446A PRODUCTION OF SUBSTRATE METAL FOR DIRECTLY HEATED CATHODE-RAY TUBE 失效
公开(公告)号：JPS57168446A
公开(公告)日：1982-10-16
申请号：JP5182981
申请日：1981-04-08
申请人： HITACHI LTD
发明人： SAKAMOTO HIROSHI , SUWA MASATERU , TENNO HIROSHI , ONODERA KIYUUKICHI
IPC分类号： H01J1/14 , H01J1/15 , H01J9/04
摘要： PURPOSE:To obtain a substrate metal capable of keeping the initial properties for a long period of time by a method wherein Ni-W alloy, alloy prepared by substituting Co for Ni, or the one prepared by substituting Mo for W is made to contain the predetermined quantity of Mg. CONSTITUTION:A core alloy is prepared by substituting Mo for part or the whole of W contained in Ni-15-30% alloy and cut by the predetermined dimensions after being cold worked. One side of the metal core is coated with a nitrocellulose solvent in which, for instance, Ni powder 2 has been uniformly dispersed and then the Ni powder is baked in a deoxidizing atmosphere and the like. Then the Ni powder is again applied and, by sandwiching an Ni-0.02- 1.5Mg alloy sheet 4 between two sheets of core metal, the combination is heated at, for instance, 800 deg.C to combine them. The product is repeatedly cold rolled and annealed for softening, and cut by the predetermined dimensions. In so doing, an excellent substrate metal as a directly heated cathode which can keep the initial properties for a long time is obtained.

9. 发明专利

JPS57154748A MANUFACTURE OF BASE METAL FOR DIRECTLY HEATED CATHODE 失效
公开(公告)号：JPS57154748A
公开(公告)日：1982-09-24
申请号：JP3939181
申请日：1981-03-20
申请人： HITACHI LTD
发明人： SAKAMOTO HIROSHI , SUWA MASATERU , TENNO HIROSHI , ONODERA KIYUUKICHI
IPC分类号： H01J9/04
摘要： PURPOSE:To obtain a base metal, with which the initial performance of a directly heated cathode can be maintained for a long period of time, by mixing Ni powder and Mg powder in a given ratio by weight, and interposing the mixture between base metals by spraying or something similar so as to join the said base metals. CONSTITUTION:A Ni-W alloy containing no reducing agents, an alloy prepared by replacing part of W contained in the above Ni-W alloy with Mo, or an alloy prepared by replacing part of Ni contained in the above Ni-W alloy with Co is added and mixed with a reducing agent, which is prepared by mixing Mg powder and Ni powder in a ratio by weight of 100 to 0.5-20 by use of a solvent, so as to prepare a mixture. After that, the mixture is evenly applied between base metals by brush painting or spraying, and is heated in an atmosphere of hydrogen gas, an inactive gas or vacuum so as to make the base metals to be joined. By the means mentioned above, an excellent base metal, with which the initial performance of a directly heated cathode can be maintained for a long period of time, can be obtained.

10. 发明专利

JPS5773945A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5773945A
公开(公告)日：1982-05-08
申请号：JP14945280
申请日：1980-10-27
申请人： Hitachi Ltd
发明人： OONUKI HITOSHI , TENNO HIROSHI , MORITA HIROKANE , ONODERA KIYUUKICHI
IPC分类号： H01L21/52 , H01L23/48 , H01L23/482 , H01L29/417 , H01L29/74
CPC分类号： H01L24/72 , H01L23/4824 , H01L29/41716 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01072 , H01L2924/1301 , H01L2924/00
摘要： PURPOSE:To prevent a short circuit between electrodes by a method wherein, in a pressure welded type large scale semiconductor device provided with a first main electrode and a control electrode on the first main surface of a substrate, and a second main electrode on the other main surface, an Al alloy containing the specified amount of Cu or Si is used at the first main electrode. CONSTITUTION:An anode metal plate 10 is attached to an electrode 8 on a p-emitter layer 5 with large capacitance, for instance, in a gate turn-off thyristor. An electrode 6 is provided in an n-emitter region 2 formed in a p-base layer 3 and a cathode metal plate 9 is allowed to contact the electrode 6 so that current flows. The cathode electrode 6 and a gate electrode 7 are positioned mutually in a zigzag shape and the former is formed simultaneously with the latter. In this case, the material quality of the former is defined as an Al alloy containing, for instance, 0.5-5wt% of Cu or 1-13wt% of Si. By so doing, comparing with the use of pure Al, that of the Al alloy can minimize the deformation of an electrode due to added pressure and prevent the occurrence of a short between cathode and gate electrodes.
摘要翻译：目的：通过以下方法防止电极之间的短路：在基板的第一主表面上设置有第一主电极和控制电极的压焊型大型半导体器件和在基板的第一主表面上的第二主电极主表面，在第一主电极上使用含有规定量的Cu或Si的Al合金。构成：在具有大电容的p型发射极层5上的电极8上附接阳极金属板10，例如在栅极截止晶闸管中。电极6设置在形成在p基底层3中的n发射极区域2中，并且允许阴极金属板9接触电极6，使得电流流动。阴极电极6和栅电极7相互成为Z字形，前者与后者同时形成。在这种情况下，前者的材料质量被定义为含有例如0.5-5重量％的Cu或1-13重量％的Si的Al合金。通过这样做，与纯Al的使用相比，Al合金的使用可以由于增加的压力而使电极的变形最小化，并且防止阴极和栅电极之间发生短路。

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