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1. 发明专利

JPS57183042A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57183042A
公开(公告)日：1982-11-11
申请号：JP6813881
申请日：1981-05-08
申请人： HITACHI LTD
发明人： BABA NOBORU , TENNO HIROSHI , OONUKI HITOSHI , SUWA MASATERU , KIZAWA KENICHI , MORITA KEIICHI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To reduce the forward voltage drop as well as to eliminate the decrease in the withstand pressurizing force for the title semiconductor device by a method wherein a semiconductor substrate and an electrode are adhered using the solder material consisting of Al, containing Cu of specified composition ratio or below, Cu or Al, Cu and Si. CONSTITUTION:An Al layer is evaporated on both sides of the Si substrate 1 with P, N and N conductive layers la-lc. On the other hand, a Cu layer is evapor-deposited on an Mo plate 2 which is one of supporting electrodes, and a heat treatment is performed. The above two layers are set so that the Al layer on the layer lc and the Cu layer on the Mo plate 2 will be contacted each other, and a soldering work and a heat treatment are performed. As for the composition ratio of the Al and the Cu for the soldering material 3, the Al layer r and the Cu layer are adjusted so that Cu is 32 atom % or less with the remnant of Al will be obtained. Accordingly, a low forward voltage drop and a large withstand pressurizing force can be obtained. Above-mentioned effect will be obtained even when the Alis replaced with Al-Si alloy.

2. 发明专利

JPS57177532A ELECTRODE DEVICE FOR SEMICONDCUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS57177532A
公开(公告)日：1982-11-01
申请号：JP6134981
申请日：1981-04-24
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , TENNO HIROSHI , BABA NOBORU , MORITA KEIICHI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To obtain the low-cost electrode of an excellent thermal fatigue resisting property having no void at the jointed part by a method wherein plates such as a Cu stud, an Fe-Ni and the like, and the internal electrode such as W and the like are diffused and joined together at the same time using Al-Cu solder. CONSTITUTION:Cu 23 and Al 22 are laminated by evaporation on the internal electrode 5 of the W and the lower surface of the Fe-Ni plate 2. The above is superposed on a Cu stud 1, pressure is applied using a weight, heated at 520 deg.C for 15min or thereabouts in N2, cooled down, and the electrode device is completed. As an internal electrode material, Cu-C, MO and Fe-Ni may be used besides the W. According to this constitution, as the Al and the Cu can be diffused and joined together, they are adhered more tightly than when Au-Sn solder and the like are used, they have a longer life for thermal fatigue, and no void is generated at the joined part.

3. 发明专利

JPS5798667A METALLIC MEMBER WITH HIGH SEIZURING RESISTANCE PERFORMANCE 失效
公开(公告)号：JPS5798667A
公开(公告)日：1982-06-18
申请号：JP17452480
申请日：1980-12-12
申请人： HITACHI LTD
发明人： OOTAKA KIYOSHI , CHIKAZAKI MITSUO , TENNO HIROSHI
IPC分类号： F16B33/06 , C23C10/48 , C23C12/02
摘要： PURPOSE:To obtain a metallic member with high seizuring resistance, by diffusing and immersing a metal forming oxide film under non-oxidative atmosphere to the surface of the member. CONSTITUTION:A metal forming oxide film on the surface of a member is diffused and immersed to a metal contact under non-oxidative atmosphere under high vaccum of e.g., 10 mm. Hg or less or equivalent. That is, diffusion and immersing layer of Al and B is formed to a contact surface of metallic members consisting essentially of one or more of Fe, Ni, Co. The formation of the diffusion and immersing layer is made by the powder pack method. It is most preferred that one or more of Fe, Ni, Co consist(s) the major component(s) of the metallic member and the member is applicable preferably to bolts and nuts made of alloy of them including Cr.

4. 发明专利

JPS5778144A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5778144A
公开(公告)日：1982-05-15
申请号：JP15388780
申请日：1980-11-04
申请人： Hitachi Ltd
发明人： KIZAWA KENICHI , BABA NOBORU , TENNO HIROSHI
IPC分类号： H01L21/52 , H01L23/492
CPC分类号： H01L23/4928 , H01L24/01 , H01L2924/351 , H01L2924/00
摘要： PURPOSE:To form a bonding structure of a semiconductor device having rigidity at low temperature and good electric characteristics by providing the prescribed solder materials for a semiconductor substrate and a supporting electrode and disposing and bonding solder material made of Sn or In between the soldering materials. CONSTITUTION:A Cu (or Ni) solder material 12 is provided at an Mo supporting electrode 10 soldered, for example, to a copper electrode 5, for example, in a flat diode 1, and Sn (or In) solder material 13 is interposed and bonded between the solder material 12 and a solder 11 made of, for example, aluminum (or any of Au, Pt and Cr). An aluminum electrode 6 is provided on the upper surface of a substrate 9, and is contacted under pressure via a W buffer plate 16. Since this bonding structure can be rigidly bonded at a low temperature (approx. 300 deg.C), it can reduce the thermal stress to the substrate 9, and preferable electrically contacting property can be contained without the conductive type of the substrate 9. Various types of material such as composite material in which carbon fiber is buried in W, Mo, Fe, Cu, Al, Fe-Ni alloy, Cu matrix can be applied to the electrode 10.
摘要翻译：目的：通过在半导体基板和支撑电极之间设置规定的焊锡材料并且在焊料之间设置和焊接由Sn或In制成的焊料，从而形成具有低温刚性和良好电特性的半导体器件的接合结构。构成：在例如在平坦二极管1中焊接到例如铜电极5的Mo支持电极10处设置Cu（或Ni）焊料12，并且插入Sn（或In）焊料13 并且焊接在焊料12和由例如铝（或Au，Pt和Cr中的任一种）制成的焊料11之间。在基板9的上表面上设置有铝电极6，并通过W缓冲板16在压力下接触。由于该接合结构可以在低温（约300℃）下刚性接合，所以可以降低对基板9的热应力，并且可以不含基板9的导电型而包含优选的电接触性。各种类型的材料如碳纤维埋在W，Mo，Fe，Cu，Al中的复合材料，Fe-Ni合金，Cu基体可以施加到电极10上。

5. 发明专利

JPS56156755A A COATING METHOD FOR NI ALLOY 失效
公开(公告)号：JPS56156755A
公开(公告)日：1981-12-03
申请号：JP5785480
申请日：1980-05-02
申请人： HITACHI LTD
发明人： CHIKAZAKI MITSUO , OOTAKA KIYOSHI , OKAYAMA AKIRA , KIZAWA KENICHI , TENNO HIROSHI
IPC分类号： C23C10/48 , C23C10/60 , F01D5/28
摘要： PURPOSE:To form a coated Al layer with superior corrosion resistance and ductility on the surface of an Ni alloy by subjecting the surface to diffusion cementation with Al and converting the resulting layer into a monoaluminide layer under specified conditions. CONSTITUTION:Machine parts made of Ni alloy are subjected to diffusion cementation with Al at

6. 发明专利

JPS5685831A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5685831A
公开(公告)日：1981-07-13
申请号：JP16150279
申请日：1979-12-14
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , TENNO HIROSHI , BABA NOBORU , ONODERA KIYUUKICHI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To attach an electrode to the semiconductor device without increasing the forward voltage drop by securing W or Mo electrode through Ni, Ti or Cr film onto an Si with a solder containing mainly aluminum. CONSTITUTION:An Ni, Ti or Cr film having preferable adhesive with the Si is substrate, and is heated and bonded to the W or Mo electrode with aluminum solder containing the Si. The Si does not melt in the aluminum alloy solder due to the disposition of the Ni, Ti or Cr film, and provides preferable wettability with the W, Mo and the Ni, Ti or Cr. According to this configuration, since it can prevent the P type conductive regrowing layer, the forward voltage drop of the semiconductor device can be lowered.

7. 发明专利

JPS5645035A PREPARATION OF SEMICONDUCTORRSUPPORTING ELECTRODE 失效
公开(公告)号：JPS5645035A
公开(公告)日：1981-04-24
申请号：JP11936979
申请日：1979-09-19
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , BABA NOBORU , TENNO HIROSHI , KUNIYA KEIICHI , ARAKAWA HIDEO , OGAWA TAKUZOU
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To obtain a semiconductor-supporting electrode having small and uniform thermal expansion coefficient by alternately piling a composite material of Cu and spiral C fibers and Cu plates to form one body so that the disorder of the fibers in the lateral and longitudinal directions can be prevented. CONSTITUTION:When the C in a Cu-C fiber is made above 50vol%, a bundle of the fibers can have a fairly even Cu plated layer, and therefore the bundle can be coiled uniformly, so that the undulation of the C fibers is prevented. Moreover, hot- pressing several coiled Cu-C fibers sandwiching Cu plates permits the Cu plates to prevent the deformation of the fibers. Consequently, the contraction coefficient decreases, and also the longitudinal disorder of the fibers largely reduces. In addition, the electrical conductivity can be adjusted by increasing or decreasing the volume of the Cu. The constitution permits an electrode having a uniform thermal expansion coefficient to be formed at a large yield.

8. 发明专利

JPS5642379A SEMICONDUCTOR DISPLACEMENT TRANSDUCER 失效
公开(公告)号：JPS5642379A
公开(公告)日：1981-04-20
申请号：JP11730179
申请日：1979-09-14
申请人： HITACHI LTD
发明人： TSUCHIYA MASATOSHI , TENNO HIROSHI
IPC分类号： G01B7/16 , H01L29/84
摘要： PURPOSE:To obtain preferable characteristics in the semiconductor displacement transducer by forming a solder layer of distortion creating side of Au-Si eutectic solder and an intermediate layer of a laminate of Cr, Cu, Au as seen from the insulating layer when fixing a distortion creating alloy and a semiconductor distortion detector to the insulating layer and intermediate metallic layer and further through an alloy solder layer. CONSTITUTION:When fixing a semiconductor detector 2 on a distortion creating alloy 1, an alloy solder layer 6 made of Au-Si eutectic solder is converted on the alloy 1, and an intermediate metallic layer 5 laminated with Cr, Cu, Au is formed thereon while bringing Au into contact with the layer 6. Then, an insulating film 4 such as SiO2 is coated at the Cr side of the uppermost layer, the detector 2 is fixed onto the film 4, a reaction unit 3 is formed thereat, and lead wires 7 are led from both ends thereof. Thus, the drift characteristics at high temperature at zero point can be improved, and the nonlinearity error of the distortion vs. output characteristics can be reduced extremely.

9. 发明专利

JPS5582773A HEAT RESISTANT ALLOY COATING METHOD TO PROVIDE CORROSION RESISTANCE 失效
公开(公告)号：JPS5582773A
公开(公告)日：1980-06-21
申请号：JP15720678
申请日：1978-12-15
申请人： HITACHI LTD
发明人： CHIKAZAKI MITSUO , OOTAKA KIYOSHI , TENNO HIROSHI
IPC分类号： C23C16/06 , C23C16/02 , C23C28/02
摘要： PURPOSE:To provide superior corrosion and thermal impact resistances to a Cr coated layer on a heat resistant alloy contacting to hot corrosive gas by coating one or more platinum group metals onto the alloy surface and coating Cr to form a cpd. of the platinum group metals and Cr in the coated layer. CONSTITUTION:The surface of a Ni or Co alloy is coated with one or more platinum group metals such as Pt, Pd and Rh by sputtering, plating or other method. Cr is then coated onto this coated layer pref. by chemical vapor-phase vacuum- deposition to form a cpd. of the platinum group metals and Cr. Thus, a coated layer with high corrosion resistance and superior thermal impact resistance is formed on the alloy surface. This method is pref. applied to parts such as a gas turbine which are exposed to hot corrosive gas.

10. 发明专利

JPS5518573A DIFFUSIONNCOVERING METHOD FOR A ON HEAT RESISTANT ALLOY SURFACE 失效
公开(公告)号：JPS5518573A
公开(公告)日：1980-02-08
申请号：JP9147878
申请日：1978-07-28
申请人： HITACHI LTD
发明人： CHIKAZAKI MITSUO , OOTAKA KIYOSHI , TENNO HIROSHI
IPC分类号： C23C10/48 , C23C10/52
摘要： PURPOSE:To form a covering layer with superior high temp. strength, corrosion resistance and oxidation resistance on the surface of a heat resistant alloy by covering the surface with Ni and a Pt group metal in order followed by diffusion covering of Al. CONSTITUTION:The surface of a heat resistant alloy based on at least one of Fe, Ni and Co is plated with Ni and a Pt group metal such as Pt, Rh or Pd in order. The plated alloy is then buried in a pack material consisting of 200 mesh Al powder 30 wt%, 325 mesh Al2O3 powder 69 wt% and NH4Cl powder 1 wt%, and it is heated to 800 deg.C for 2 hr under an Ar gas atmosphere to be subjected to Al pack treatment. A covering layer made of intermetallic cpd. of the Pt group metal and Al is formed on the alloy surface, and a NiAl layer contg. little undissolved precipitated particles or carbide is formed under the above layer, thus remarkably enhancing the thermal impact resistance of the covering layer.

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