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1. 发明专利

JP2002252552A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JP2002252552A
公开(公告)日：2002-09-06
申请号：JP2001049556
申请日：2001-02-26
申请人： HITACHI LTD
发明人： YAO TSUTOMU , TOKUNAGA KIICHI , ONOSE HIDEKATSU , YASUDA TOSHIO , OIKAWA SABURO
IPC分类号： H01L27/04 , H01H9/54 , H01L21/337 , H01L21/822 , H01L29/12 , H01L29/78 , H01L29/808 , H03K17/08 , H03K17/56 , H03K17/687
摘要： PROBLEM TO BE SOLVED: To provide a small-sized and fast-breaking contactless switch which has small loss when supplied with a current. SOLUTION: This contactless AC switch is characterized by that a power semiconductor element of its switching part is a unipolar transistor using as a material a wide-gap semiconductor crystal of >=2.0 eV in the band-gap energy between a valance electron band and a conductive electron band and has linear output characteristics for a control signal. Then at least two semiconductor elements are connected in series while having the reverse polarity directions and a control circuit supplies a control signal turning on and off the semiconductor elements almost at the same time.

2. 发明专利

JP2002231965A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002231965A
公开(公告)日：2002-08-16
申请号：JP2001025422
申请日：2001-02-01
申请人： HITACHI LTD
发明人： ONOSE HIDEKATSU , YAO TSUTOMU
IPC分类号： H01L29/06 , H01L21/329 , H01L21/337 , H01L29/12 , H01L29/78 , H01L29/80 , H01L29/808 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device such as a diode or a transistor where the breakdown strength is improved, by clarifying the concentration profile of a termination region where a guard ring and an FLR are combined. SOLUTION: The guard ring and the FLR are combined, using boron for dopant, and besides the concentration of impurities in the FLR is made 2×1017 cm-3 or over, and the concentration of impurities in the guard ring is made as one-tenth high as that of the impurities in the FLR, whereby high breakdown strength is achieved.

3. 发明专利

JP2000116111A SURGE ABSORBER AND THYRISTOR CONVERSION DEVICE USING THE SAME 失效
公开(公告)号：JP2000116111A
公开(公告)日：2000-04-21
申请号：JP27695198
申请日：1998-09-30
申请人： HITACHI LTD
发明人： KOSEKI SHOICHIRO , YAO TSUTOMU , KASHIWAZAKI HIROSHI
IPC分类号： H02M1/00 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To improve surge voltage limitation characteristics and to increase the amount of resistance of absorption energy by utilizing the inverse yield characteristics of an SiC rectification diode as a surge absorber. SOLUTION: An SiC rectification diode is connected in series in inverse polarity as a surge absorber 1. The SiC rectification diode conducts electricity at a low forward voltage in a forward direction but conducts almost no electricity in an opposite direction. However, when a voltage in an inverse direction is increased, an inverse yield occurs at a certain voltage and an inverse current rapidly increases. In the SiC rectification diode where SiC is used for a semiconductor, the band gap energy of the SiC is approximately three times larger than that of silicon, and the upper limit of the operation temperature of the junction is approximately 1,000 deg.C as compared with approximately 150 deg.C of silicon. As a result, when an ordinary temperature is for example 40 deg.C, energy can be absorbed by approximately ten times larger using the same substrate dimension in terms of heat insulation using the SiC rectification diode.

4. 发明专利

JP2000077682A Schottky diode 有权
标题翻译：肖特基二极管
公开(公告)号：JP2000077682A
公开(公告)日：2000-03-14
申请号：JP24283198
申请日：1998-08-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YAO TSUTOMU , ONOSE HIDEKATSU
IPC分类号： H01L29/872 , H01L29/47
摘要： PROBLEM TO BE SOLVED: To prevent impression of high reverse voltages upon a Schottky diode so as to improve the resistance of the diode to overvoltages by providing a high yield voltage portion in parallel with a Schottky barrier area and scattering low yield voltage portions, and then, controlling yield voltages by utilizing the punch through of p-n junctions.
SOLUTION: The semiconductor substrate 1 of a Schottky diode is composed of a low-resistance n+-type layer 2 containing an impurity at a high concentration and a high-resistance n--type layer 3 containing the impurity at lower concentration and provided with a low-resistance cathode 6 in ohmic contact and a Schottky metal 5 which becomes an anode and forms a Schottky barrier 51. High-concentration p+-type layers 4 are provided at the ends of the Schottky metal 5 in such a way that the layers 4 are brought into ohmic contact with a Schottky electrode at low resistance. In addition, p+-type layers 7 are provided so that p-n junctions 71 may be formed with the n--type layer 3 and the layers 7 may be brought into ohmic contact with the Schottky metal 5 on the main surface of the substrate 1. Therefore, conduction of the Schottky barrier section can be prevented and the resistance of the diode to overvoltages can be improved.
COPYRIGHT: (C)2000,JPO
摘要翻译：要解决的问题为了防止在肖特基二极管上产生高反向电压的印象，以便通过提供与肖特基势垒区域并且散射低屈服电压部分并联的高屈服电压部分来提高二极管的过电压的电阻，然后通过利用pn结穿过来控制屈服电压。解决方案：肖特基二极管的半导体衬底1由含有高浓度杂质的低电阻n +型层2和含有较低浓度杂质的高电阻n型层3组成，并具有欧姆接触的低电阻阴极6和成为阳极并形成肖特基势垒51的肖特金属5。在肖特基金属5的端部设置高浓度p +型层4，使得层4 与低电阻的肖特基电极欧姆接触。此外，提供p +型层7，使得pn结71可以形成有n型层3，并且层7可以与衬底1的主表面上的肖特基金属5欧姆接触。因此，能够防止肖特基势垒部的导通，能够提高二极管的过电压。

5. 发明专利

JPH1117176A SILICON-CARBIDE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH1117176A
公开(公告)日：1999-01-22
申请号：JP16686097
申请日：1997-06-24
申请人： HITACHI LTD
发明人： IWASAKI TAKAYUKI , ONO TOSHIYUKI , YAO TSUTOMU
IPC分类号： H01L29/12 , H01L29/24 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To alleviate the electric field strength of the interface along an insulating film and the first conducting-type drift by providing the second trench, which is deeper than the first trench filled with a gate electrode and the second conducting type region along the second trench. SOLUTION: A gate electrode 13 of polycrystal silicon is provided at the inner side of a trench 5 through a gate insulating film 6 of a silicon oxide film. A drain electrode 11 of an Ni film is provided at the back surface of an n substrate 1. From the surface of a p-base layer 3, a p type region 7 is formed along a second trench 8, which is deeper than the trench 5 at the gate part, and the side surface and the bottom surface of the second trench 8. A source electrode 12 comprising Ti-Al up to the p-base layer 3 and the surface of an n source region 4 from the p -type region 7 is formed. Thus, the electric field strength of the interface of the gate insulating film 6 and an n drift layer 2 can be alleviated by a depletion layer expanding from the pn junction to the n drift layer 2.

6. 发明专利

JPH0864800A SILICON CARBIDE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0864800A
公开(公告)日：1996-03-08
申请号：JP20043494
申请日：1994-08-25
申请人： HITACHI LTD
发明人： KAWASE DAISUKE , ONO TOSHIYUKI , KOZONO YUZO , YAO TSUTOMU
IPC分类号： H01L21/28 , H01L21/203 , H01L29/43
摘要： PURPOSE: To realize an ohmic electrode which has a low contact resistance and high reliability so as to obtain a silicon carbide semiconductor device which has a high operating voltage, large operating current, and is excellent in reliability by a method wherein a composite compound composed of low-resistance metal silicide, metal carbide, metal, silicon, and carbon is formed on a silicon carbide single crystal. CONSTITUTION: A mixed-phase layer 12 of titanium silicide and titanium carbide is formed on a silicon carbide single crystal 11, and furthermore a titanium layer 13 is laminated thereon to serve as an ohmic electrode. By this setup, an ohmic electrode of low contact resistance and high reliability can be obtained. Furthermore, as silicon carbide and the electrode have small thermal expansion coefficient, a silicon carbide semiconductor device which has a high operating voltage, large operating current, excellent in reliability at a high temperature, and equipped with an ohmic electrode of low contact resistance and high reliability can be obtained.

7. 发明专利

JPH07131016A FET TRANSISTOR AND FABRICATION THEREOF 失效
公开(公告)号：JPH07131016A
公开(公告)日：1995-05-19
申请号：JP21693094
申请日：1994-09-12
申请人： HITACHI LTD
发明人： ONO TOSHIYUKI , INOUE HIRONORI , KAWASE DAISUKE , KOZONO YUZO , SUZUKI TAKAYA , YAO TSUTOMU
IPC分类号： H01L29/78 , H01L21/331 , H01L21/336 , H01L29/12 , H01L29/24 , H01L29/47 , H01L29/68 , H01L29/732 , H01L29/74 , H01L29/80 , H01L29/861 , H01L29/872
摘要： PURPOSE:To provide an FET transistor employing a hexagonal system silicon carbide as a material, and fabrication method thereof, in which high power conversion capacity is realized by reducing the source-drain leak current when the gate voltage is turned OFF and decreasing the electric resistance when the gate voltage is turned ON. CONSTITUTION:It is constituted such that the current flowing through a main current path, e.g. the current flowing through the source-drain of an FET transistor, flows in parallel with the plane {0001} and a channel is formed in parallel with the plane {1120}.

8. 发明专利

JPH0478169B2 失效
公开(公告)号：JPH0478169B2
公开(公告)日：1992-12-10
申请号：JP23498984
申请日：1984-11-09
申请人： HITACHI LTD
发明人： MURAKAMI SUSUMU , KAGAMI TERUYUKI , YAO TSUTOMU , TAKAHASHI MASAAKI
IPC分类号： H01L29/73 , H01L21/314 , H01L21/331 , H01L29/06 , H01L29/40 , H01L29/732 , H01L29/74

9. 发明专利

JPH02214161A GATE TURN-OFF THYRISTOR 失效
公开(公告)号：JPH02214161A
公开(公告)日：1990-08-27
申请号：JP3383289
申请日：1989-02-15
申请人： HITACHI LTD
发明人： SATO YUKIMASA , TAKADA MASANORI , YAO TSUTOMU , SANPEI ISAMU , YAGISHITA KENJI
IPC分类号： H01L29/744 , H01L29/74
摘要： PURPOSE:To obtain a gate turn-off thyristor GTO of a p-n-i-p-n structure which can reduce a power loss by a method wherein at least one out of a concentration and a thickness of a buffer layer is made larger than that inside a bulk partially such as near an edge face of an element or the like. CONSTITUTION:A p-type emitter layer 2, an n-type base layer 3, a p-type base layer 4 and an n-type emitter layer 5 are formed inside a semiconductor substrate 1; in addition, an n-type buffer layer 6 is formed so as to be adjacent to the p-type emitter layer 2; an anode electrode A is installed at the p-type emitter layer 2; a gate electrode G is installed at the p-type base layer 4; a cathode electrode K is installed at the n-type emitter layer 5. An impurity concentration of the n-type buffer layer 6 is made larger than an impurity concentration of the n-type base layer 3; an impurity concentration of an (a) part at an edge face part of an element is made much higher than that of a (b) part; in this manner, at least one out of a thickness and the impurity concentration is made partially larger. Thereby, it is possible to obtain a p-n-i-p- n type GTO in which a power loss of the element has been reduced.

10. 发明专利

JPH0142638B2 失效
公开(公告)号：JPH0142638B2
公开(公告)日：1989-09-13
申请号：JP23776683
申请日：1983-12-19
申请人： HITACHI LTD
发明人： YAO TSUTOMU , NAGANO TAKAHIRO , OIKAWA SABURO , SATO YUKIMASA , KIMURA ARATA , FUKUI HIROSHI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/10 , H01L29/167 , H01L29/32 , H01L29/423 , H01L29/732 , H01L29/74 , H01L29/744

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