专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012217761A Plasma sterilization apparatus 审中-公开
标题翻译：等离子体杀菌装置
公开(公告)号：JP2012217761A
公开(公告)日：2012-11-12
申请号：JP2011089366
申请日：2011-04-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANDO TAKUMI , NEGISHI NOBUYUKI , KOBAYASHI HIROYUKI , SUZUKI KEIZO
IPC分类号： A61L9/18 , A61L2/14 , H05H1/24
CPC分类号： A61L2/14 , H05H1/2406 , H05H2001/2425
摘要： PROBLEM TO BE SOLVED: To provide a plasma sterilization apparatus with high plasma generation efficiency.SOLUTION: The plasma sterilization apparatus includes a high-frequency electrode 2, an earth electrode 3, a dielectric body 1, and a plasma generation module for generating plasma between the high-frequency electrode 2 and the earth electrode 3, and an insulating spacer 6 is disposed between the earth electrode 3 and the dielectric body 1. It causes that the outer electric field increases more than the inner electric field of the dielectric body 1 and reactive power is reduced, and the plasma generation efficiency improves.
摘要翻译：要解决的问题：提供具有高等离子体产生效率的等离子体灭菌装置。解决方案：等离子体灭菌装置包括高频电极2，接地电极3，电介质体1和用于在高频电极2和接地电极3之间产生等离子体的等离子体产生模块，绝缘隔离物6设置在接地电极3和电介质体1之间。这导致外部电场比电介质体1的内部电场增加，并且无功功率降低，等离子体产生效率提高。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2004333404A Micro-reactor, its manufacturing method and sample screening device 审中-公开
公开(公告)号：JP2004333404A
公开(公告)日：2004-11-25
申请号：JP2003132540
申请日：2003-05-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OGAWA TARO , IZAWA MASARU , NEGISHI NOBUYUKI , UMEMURA KAORU , KAKIBAYASHI HIROSHI
IPC分类号： G01N33/50 , B01L3/00 , C12M1/00 , G01N27/416 , G01N33/15 , G01N37/00
CPC分类号： B01L3/5085 , B01L2300/0645 , B01L2300/0819 , C12M23/12 , C12M23/20
摘要： PROBLEM TO BE SOLVED: To provide a micro-reactor capable of easy introduction of a sample such as an animal cultured cell into a micro-cell, further miniaturization and high integration of the micro-cell, and efficiency promotion of a medicinal effect screening experiment. SOLUTION: This micro-reactor is characterized by having a constitution to which processing is applied, for manifesting affinity such as hydrophilicity of the inside 3 of the micro-reactor 1 to the sample such as cells and non-affinity thereto such as water repellency of the peripheral part 4 of the micro-reactor 1, and also characterized by applying mechanical vibration 9 to the micro-reactor or its peripheral part by an exciter or the like. Consequently, the sample 6 such as the cell dropped to the micro-reactor peripheral part does not adhere to the part but can be moved. The sample 6 such as the cell introduced once into the micro-reactor is captured inside 3 of the micro-reactor 1 and never goes out again to the outside. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2007214588A Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007214588A
公开(公告)日：2007-08-23
申请号：JP2007106656
申请日：2007-04-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NEGISHI NOBUYUKI , IZAWA MASARU
IPC分类号： H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To reduce contact resistance by efficiently performing the suppression of a damage layer and the removal of a high resistance layer to be formed on a base silicon wafer or wiring layer in contact hole formation.
SOLUTION: In the present invention, a contact hole is formed by an etching process in which ion energy and an O
2 flow rate are reduced with the progress of etching depth. Thus, the damage layer to be formed in the base is suppressed. Then, by introducing a high resistance layer removing process using hydrogen or gas plasma containing hydrogen, the contact resistance can be reduced.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过有效地进行损伤层的抑制和去除形成在接触孔形成中的基底硅晶片或布线层上的高电阻层来降低接触电阻。解决方案：在本发明中，通过蚀刻工艺形成接触孔，其中随着蚀刻深度的进行，离子能量和O 2 流速减小。因此，能够抑制在基材中形成的损伤层。然后，通过使用氢或含有氢气的气体等离子体引入高电阻层去除工艺，可以降低接触电阻。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2005223367A Plasma treatment device and plasma treatment method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：JP2005223367A
公开(公告)日：2005-08-18
申请号：JP2005130237
申请日：2005-04-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOKOGAWA KATANOBU , IZAWA MASARU , ITABASHI NAOSHI , NEGISHI NOBUYUKI , TAJI SHINICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment capable of accurately controlling processing treatment and capable of stably maintaining the characteristics over a long period of time, by controlling active species in the plasma independently of the discharge power, pressure, flow rate and composition of the material gas that are the plasma generating conditions.
SOLUTION: The plasma treatment device is configured, such that the plasma is formed by the interaction of an electromagnetic wave of 300 to 500 MHz and a magnetic field, the electromagnetic wave of 50 kHz to 30 MHz is superimposed on the electromagnetic wave of the 300 to 500 MHz on an electromagnetic wave introducing flat plate, and the distance between the flat plate and the object processing material is designed to be less than 1/2 the diameter of the object processing material, and the active species control is performed which depends on the distance.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够精确地控制加工处理并且能够长时间稳定地保持特性的等离子体处理，通过独立于放电功率，压力，流量等来控制等离子体中的活性种类以及作为等离子体产生条件的原料气体的组成。解决方案：等离子体处理装置被配置为使得等离子体通过300至500MHz的电磁波和磁场的相互作用形成，将50kHz至30MHz的电磁波叠加在电磁波上在引入平板的电磁波中为300〜500MHz，平板与被处理材料之间的距离设计为小于目标处理材料直径的1/2，并且进行活性种类控制这取决于距离。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2010166101A Plasma etching device, and plasma etching treatment method 有权
标题翻译：等离子体蚀刻装置和等离子体蚀刻处理方法
公开(公告)号：JP2010166101A
公开(公告)日：2010-07-29
申请号：JP2010106916
申请日：2010-05-07
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MOMOI YOSHINORI , YOKOGAWA KATANOBU , IZAWA MASARU , NEGISHI NOBUYUKI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To solve the problem of a conventional plasma treatment device in which in-plane distribution of an active seed or sub-produced gas which contributes to plasma treatment is not necessarily uniformed since exhaust is performed only from the peripheral part of a treatment object. SOLUTION: The plasma treatment device includes a gas blowing means having a plurality of gas blowout ports 18 on a surface facing a treatment object 8, and performs treatment to the treatment object 8. In the device, two or more of mixed gases differed in flow ratio are blown out through the different gas blowout ports, whereby uniform plasma treatment can be performed to the treatment object. Further, the uniform plasma treatment can be performed to the treatment object also by providing gas suction ports on the surface facing the treatment object. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了解决常规等离子体处理装置的问题，其中有助于等离子体处理的活性种子或次生气体的面内分布不一定是均匀的，因为仅从周边进行排气治疗对象的一部分。解决方案：等离子体处理装置包括在面向处理对象8的表面上具有多个气体吹出口18的气体吹送装置，并且对处理对象8进行处理。在该装置中，两个或更多个混合气体通过不同的气体吹出口吹出不同的流量比，从而可以对处理对象进行均匀的等离子体处理。此外，也可以通过在面向治疗对象的表面上设置气体吸入口，对治疗对象进行均匀的等离子体处理。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008166853A Plasma etching apparatus 审中-公开
标题翻译：等离子体蚀刻装置
公开(公告)号：JP2008166853A
公开(公告)日：2008-07-17
申请号：JP2008086568
申请日：2008-03-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MOMOI YOSHINORI , YOKOGAWA KATANOBU , IZAWA MASARU , NEGISHI NOBUYUKI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To solve the problem, wherein in-plane distribution of activated species and byproduct gases that contribute to plasma processing does not always becomes uniform in the conventional plasma processing apparatuses, because evacuation is performed from only the surrounding side of the processing material.
SOLUTION: In the plasma processing apparatus having a plurality of gas blowoff ports 18 with respect to the side opposite to the processed material 8 for processing it, a uniform plasma processing can be performed onto the processed material, by exhausting a mixture gas comprising more than two kinds of gases with mutually different flow ratio from the mutually different exhaustion ports. Furthermore, the uniform plasma processing can be implemented to the processed material, by providing a gas suction port on the opposing sides of the processed materials.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题为了解决现有等离子体处理装置中有助于等离子体处理的活性物质和副产物气体的平面内分布并不总是均匀的问题，因为仅从周围进行排气的加工材料。解决方案：在具有多个气体吹出口18的等离子体处理装置中，相对于处理材料8相反的一侧，可以对加工材料进行均匀的等离子体处理，通过排出混合气体包括与相互不同的排气口具有相互不同流量比的两种以上的气体。此外，通过在加工材料的相对侧上设置气体吸入口，可以对加工材料实施均匀的等离子体处理。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2005303330A Gas charging means for plasma etching apparatus and gas shower plate 审中-公开
标题翻译：用于等离子体蚀刻装置和气体淋浴板的气体充气装置
公开(公告)号：JP2005303330A
公开(公告)日：2005-10-27
申请号：JP2005182913
申请日：2005-06-23
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MOMOI YOSHINORI , YOKOGAWA KATANOBU , IZAWA MASARU , NEGISHI NOBUYUKI
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To attain uniform intra-surface distribution of active seed and by-product gas which make contribution to the plasma processing even in the conventional plasma processing apparatus in which evacuation is implemented only from the periphery of the processing object. SOLUTION: The plasma processing apparatus is provided with a gas injecting means including a plurality of gas injecting ports 18 at the surface opposing to the processing object 8 in order to implement the process to the processing object 8. The uniform plasma process can be implemented to the processing object by injecting a mixed gas having different flow rate ratios of two or more kinds of gas from different gas injecting ports. Moreover, the uniform plasma process can also be implemented to the processing object by providing a gas charging port to the surface opposing to the processing object. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在仅从处理对象的周边实施撤离的常规等离子体处理装置中，为了获得对等离子体处理有贡献的活性种子和副产物气体的均匀的表面内分布。解决方案：等离子体处理装置设置有气体注入装置，其在与处理对象8相对的表面处包括多个气体注入口18，以实现对处理对象8的处理。均匀等离子体处理可以通过从不同的气体注入口注入两种或更多种气体的流量比不同的混合气体来实施到处理对象。此外，通过在与处理对象相对的表面上设置气体充气口，也可以对加工对象实现均匀的等离子体处理。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005072518A Manufacturing method of semiconductor device and apparatus thereof 有权
标题翻译：半导体器件的制造方法及其设备
公开(公告)号：JP2005072518A
公开(公告)日：2005-03-17
申请号：JP2003303961
申请日：2003-08-28
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： NEGISHI NOBUYUKI , IZAWA MASARU , YOKOGAWA KATANOBU
IPC分类号： G03F7/11 , G03F7/40 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/768
CPC分类号： H01L21/0276 , H01L21/0275 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： PROBLEM TO BE SOLVED: To perform highly accurate processing in which punch-through of resist and striation due to resist damage are suppressed, in pattern formation by dry etching using a resist after the generation of ArF lithography as a mask.
SOLUTION: The condition in which Ar is not used as a plasma gas in processing of an organic antireflection film is applied. A mixed gas of Xe, Kr or Ar and Xe or a mixed gas of Ar and Kr which can reduce the electron temperature of plasma is used as a noble gas in processing a film to be processed being an insulating film. Further, contrary to the above means, a processing method and a processing apparatus for alternatingly performing resist modification and etching is applied.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了进行抑制抗蚀剂穿透和由于抗蚀剂损伤引起的条纹的高度精确的处理，在生成ArF光刻作为掩模之后通过使用抗蚀剂的干蚀刻的图案形成。解决方案：应用在有机防反射膜的加工中不用Ar作为等离子体气体的条件。在处理作为绝缘膜的被处理膜时，使用Xe，Kr或Ar和Xe的混合气体或能够降低等离子体的电子温度的Ar和Kr的混合气体作为惰性气体。此外，与上述方法相反，应用了用于交替进行抗蚀剂改性和蚀刻的处理方法和处理装置。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2008034877A Manufacturing method and manufacturing system of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法和制造系统
公开(公告)号：JP2008034877A
公开(公告)日：2008-02-14
申请号：JP2007264377
申请日：2007-10-10
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IZAWA MASARU , MORI MASASHI , NEGISHI NOBUYUKI , TAJI SHINICHI
IPC分类号： H01L21/02 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing system of semiconductor device, which actualize cost reduction of semiconductor device manufacturing and improvement of operating rate of a manufacturing apparatus by automatic generation of a process treatment condition and automation of maintenance. SOLUTION: A computer 113 in a semiconductor manufacturing apparatus automatically generates a process condition on the basis of database and a process model by input of a wafer treatment history of a film thickness, a film quality, and the like. Further, the computer 113 in the semiconductor manufacturing apparatus obtains the wafer treatment history and a measurement result from a computer 107 on a manufacturing line, to automate the input of the treatment history. Furthermore, the computer 113 in the apparatus and a computer 112 of a manufacturing apparatus maker are connected to a network, to automate offering of process conditions and scheduling of the maintenance. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供半导体器件的制造方法和制造系统，其通过自动生成处理条件和维护自动化来实现半导体器件制造的成本降低和制造装置的工作速率的提高。解决方案：半导体制造装置中的计算机113通过输入薄膜厚度，薄膜质量等的晶片处理历史，基于数据库和处理模型自动生成处理条件。此外，半导体制造装置中的计算机113从制造线上的计算机107获得晶片处理历史和测量结果，以使输入治疗历史自动化。此外，装置中的计算机113和制造装置制造商的计算机112连接到网络，以自动提供处理条件和维护的调度。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2005303329A Plasma etching apparatus 审中-公开
标题翻译：等离子体蚀刻装置
公开(公告)号：JP2005303329A
公开(公告)日：2005-10-27
申请号：JP2005182912
申请日：2005-06-23
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MOMOI YOSHINORI , YOKOGAWA KATANOBU , IZAWA MASARU , NEGISHI NOBUYUKI
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To attain uniform intra-surface distribution of active seed and by-product gas which contribute to plasma process even in the conventional plasma processing apparatus in which evacuation is conducted only from the periphery of the processing object. SOLUTION: In the plasma processing apparatus provided with a gas injecting means including a plurality of gas injecting ports 18 to the surface opposing to the processing object 8 in order to conduct the process to the processing object 8, the uniform plasma process can be implemented to the processing object by injecting a mixed gas having different flow rate ratios of two or more kinds of gas from different gas injecting ports. Moreover, the uniform plasma process can be implemented to the processing object also by providing a gas charging port to the surface opposing to the processing object. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在仅从处理对象的周边进行排气的常规等离子体处理装置中，为了获得有助于等离子体处理的活性种子和副产物气体的均匀的表面内分布。解决方案：在具有气体注入装置的等离子体处理装置中，为了将处理对象8进行处理，在与处理对象8相对的表面上包括多个气体注入口18，均匀等离子体处理可以通过从不同的气体注入口注入两种或更多种气体的流量比不同的混合气体来实施到处理对象。此外，也可以通过在与处理对象相对的表面上设置气体充气口，将均匀的等离子体处理也实施到处理对象。版权所有（C）2006，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式