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    • 2. 发明专利
    • Semiconductor integrated circuit and design method of semiconductor device
    • 半导体集成电路和半导体器件的设计方法
    • JP2005116994A
    • 2005-04-28
    • JP2003419076
    • 2003-12-17
    • Hitachi Ltd株式会社日立製作所
    • MURATA TOMOOITO YUKOABE AKIOYAMASHITA TAKEOYABUKI SHINOBUISOMURA SATORU
    • G06F17/50H01L21/82H01L21/822H01L27/04
    • PROBLEM TO BE SOLVED: To accurately measure the delay variation quantity due to crosstalk noise. SOLUTION: The semiconductor integrated circuit comprises a ring oscillator RO with an odd number of serially connected stages each composed of a plurality of inverters, a first wiring (aggress side wiring) AGG along a wiring (victim side wiring) VIC on a part of the oscillator RO, a pulse generator circuit PGEN for generating first pulses fed to the first wiring AGG, a first buffer (aggressive gate) AG connected between the first wiring AGG and the pulse generator circuit PGEN, and a second wiring connected between the pulse generator circuit PGEN and the first buffer AG. The distance between the first wiring AGG and the wiring VIC on the part of the oscillator RO is shorter than that between the second wiring and the wiring VIC on the part of the oscillator RO. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:准确测量由串扰噪声引起的延迟变化量。 解决方案:半导体集成电路包括具有奇数个串联连接级的环形振荡器RO,每个由多个反相器组成,沿着布线(受害侧布线)VIC的第一布线(边缘侧布线)AGG 振荡器RO的一部分,用于产生馈送到第一布线AGG的第一脉冲的脉冲发生器电路PGEN,连接在第一布线AGG和脉冲发生器电路PGEN之间的第一缓冲器(激进门)AG,以及连接在第一布线AGG之间的第二布线 脉冲发生器电路PGEN和第一缓冲器AG。 振荡器RO部分的第一布线AGG和布线VIC之间的距离比振荡器RO的第二布线和布线VIC之间的距离短。 版权所有(C)2005,JPO&NCIPI
    • 4. 发明专利
    • Method of designing semiconductor device
    • 设计半导体器件的方法
    • JP2011124592A
    • 2011-06-23
    • JP2011008423
    • 2011-01-19
    • Hitachi Ltd株式会社日立製作所
    • MURATA TOMOOITO YUKOABE AKIOYAMASHITA TAKEOYABUKI SHINOBUISOMURA SATORU
    • H01L21/82G06F17/50H01L21/822H01L27/04
    • PROBLEM TO BE SOLVED: To accurately measure an amount of variation in delay due to crosstalk noise. SOLUTION: The invention includes a ring oscillator RO in which a plurality of inverters are connected in series in an odd-number of stages, a first wiring (aggressive side wiring) AGG provided along a portion of a wiring (victim side wiring) VIC of the ring oscillator RO, a pulse generator circuit PGEN that generates a first pulse to be supplied to the first wiring AGG, a first buffer (aggressive gate) AG connected between the first wiring AGG and the pulse generator circuit PGEN, and a second wiring connected between the pulse generator circuit PGEN and the first buffer AG. A distance between the first wiring AGG and the portion of the wiring VIC of the ring oscillator RO is shorter than a distance between the second wiring and the portion of the wiring VIC of the ring oscillator RO. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:准确测量由于串扰噪声引起的延迟变化量。 解决方案:本发明包括其中多个反相器以奇数级串联连接的环形振荡器RO,沿着布线的一部分设置的第一布线(侵略侧布线)AGG(受害侧布线 )VIC,生成要提供给第一布线AGG的第一脉冲的脉冲发生器电路PGEN,连接在第一布线AGG和脉冲发生电路PGEN之间的第一缓冲器(激进栅极)AG,以及 连接在脉冲发生器电路PGEN和第一缓冲器AG之间的第二布线。 第一布线AGG和环形振荡器RO的布线VIC之间的距离比第二布线和环形振荡器RO的布线VIC的部分之间的距离短。 版权所有(C)2011,JPO&INPIT
    • 5. 发明专利
    • LOAD DELAY CALCULATION
    • JPH09298242A
    • 1997-11-18
    • JP13447096
    • 1996-05-01
    • HITACHI LTD
    • HIYAMA TORUITO YUKOSUZUKI KATSUKI
    • H01L21/82G06F17/50
    • PROBLEM TO BE SOLVED: To speedily compute the circuit load delay at elevated accuracy with taking account of the shield effect, by obtaining the load delay corresponding to the load capacity obtained from the source-gate load capacity-circuit load delay characteristic as its circuit load delay. SOLUTION: Expression α-(α/Lsat).X is obtained; it takes a when the length of the source-gate wiring connected to the output is 0, decreases with the increase of the wiring length and amounts to 0 when the circuit load delay in the source-gate wiring length-circuit load delay characteristic saturates at a saturated wiring length Lsat. The load capacity of the wiring is obtained by multiplying the value integrated from 0 to Lsk (actual source-gate wiring length) by the capacity of the wiring per unit length. The circuit load delay corresponding to the load capacity obtained in this delay characteristic is obtained as a source-gate circuit load delay.
    • 7. 发明专利
    • METHOD FOR DESIGNING SEMICONDUCTOR DEVICE
    • JP2002280454A
    • 2002-09-27
    • JP2001080683
    • 2001-03-21
    • HITACHI LTD
    • ITO YUKOISOMURA SATORU
    • G06F17/50H01L21/82
    • PROBLEM TO BE SOLVED: To provide a method for designing a semiconductor device in which accuracy can be enhanced in the calculation of delay or crosstalk noise while realizing highly accurate delay variation due to crosstalk and highly accurate erroneous operation check due to crosstalk. SOLUTION: According to steps S101-S110 of the method for designing a microprocessor, an ASIC, a high speed high performance LSI, or the like; delay calculation is performed using the total capacity while taking account of the actual load after placement and routing, and placement/routing and correction of routing are repeated until transfer in a target cycle can be carried out. Subsequently, delay calculation is performed using the total capacity while taking account of the actual load and crosstalk, and correction of routing is repeated until transfer in a target cycle can be carried out. Furthermore, crosstalk noise is calculated using the total capacity and the coupling capacity while taking account of the actual load, correction of routing is repeated until erroneous operation is eliminated and the data obtained after placement/routing is used as mask data.
    • 9. 发明专利
    • WIRE LAYOUT METHOD
    • JPH08330523A
    • 1996-12-13
    • JP15994395
    • 1995-06-02
    • HITACHI LTD
    • ITO YUKOISOMURA SATORU
    • H01L21/822H01L21/82H01L27/04
    • PURPOSE: To suppress the peak value of noise in such a lattice wiring as power supply wiring by selectively switching the pitch of the lattice wiring which is virtually arranged in a lattice according to the noise occurrence situation. CONSTITUTION: The pitch, namely an electrical length L1 , of a lattice wiring corresponding to modules MOD 1 and MOD2 corresponds to the noise occurrence situation of the modules. That is, after obtaining a noise compression rate αwhere the peak value of noise to be propagated reaches a specific value or less, the pitch is calculated as an electrical length L0 where the noise compression rate α is obtained and the pitch of the lattice wiring corresponding to the module MOD3, namely an electrical length L2 , can also be calculated in a similar manner. Therefore, the electrical lengths become optimized values to fully reduce the peak value of noise at each lattice point of the power supply wiring although the peak value of the noise generated from each module is relatively large and hence fully stabilizing the operation of a large-scale integrated circuit device LSI.