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1. 发明专利

JPS5645073A REVERSE CONDUCTION THYRISTER 失效
公开(公告)号：JPS5645073A
公开(公告)日：1981-04-24
申请号：JP12082879
申请日：1979-09-21
申请人： HITACHI LTD
发明人： SHIMIZU YOSHITERU , YAO TSUTOMU , OOTA TAKEHIRO
IPC分类号： H01L21/322 , H01L29/167 , H01L29/74
摘要： PURPOSE:To improve characteristics, in a device of conversely parallel, by providing a thyrister and a diode in a common semiconductor substrate through a separating region and making lifetime of minor carriers of a diode operating region shorter in the section near the separating region and larger in the section far from the separating region. CONSTITUTION:A diode high-impurity-concentration layer 20 is dispersedly formed in the center on reverse surface of an Si substrate 18, an anode emitter layer 19 is provided to surround the layer 20, and a reinforcing support plate 26 is attached onto this side. And then, No.2 base layer 22 is provided on the substrate 18, an annular cathode emitter layer 23 is dispersedly formed thereon, and a diode region and a thyrister region are separated by a separating region 27. Wgile a thyrister and a diode are connected in conversely parallel to provide a conversely conducted thyrister, by using an electron wire in a diode near the region 27 in such a constitution, Au lifetime killer is injected using an electron wire allowing a noninjected section 24 to exist. It is possible, by doing so, to control peak value of reverse recovery current.

2. 发明专利

JPS6043668B2 JPS6043668B2 - 失效
公开(公告)号：JPS6043668B2
公开(公告)日：1985-09-30
申请号：JP8496479
申请日：1979-07-06
申请人： Hitachi Ltd
发明人： SHIMIZU YOSHITERU , NAGANO TAKAHIRO , SAKURADA SHUROKU , OOTA TAKEHIRO
IPC分类号： H01L29/08 , H01L29/74 , H01L29/744
CPC分类号： H01L29/0834 , H01L29/74 , H01L29/744

3. 发明专利

JPS57117276A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS57117276A
公开(公告)日：1982-07-21
申请号：JP316481
申请日：1981-01-14
申请人： Hitachi Ltd
发明人： SAKURADA SHIYUUROKU , MATSUZAKI HITOSHI , IKEDA HIROHIKO , OOTA TAKEHIRO
IPC分类号： H01L29/73 , H01L21/331 , H01L23/482 , H01L29/08 , H01L29/417 , H01L29/74 , H01L29/744
CPC分类号： H01L29/41716 , H01L23/4824 , H01L29/0804 , H01L29/0839 , H01L29/41708 , H01L29/74 , H01L2924/0002 , Y10S148/14 , H01L2924/00
摘要： PURPOSE: To enlarge controllable withstand current quantity of a semiconductor device by a method wherein an N type emitter is extended continuously up to the lower part of bonding pad part of a cathode electrode, and an insulator of silicon oxide film, etc., is interposed between the cathode electrode and the N type emitter.
CONSTITUTION: A switching functional part 300A constitutes a P-N-P-N thyristor having structure in which a P type emitter 304 is short-circuited to an anode electrode 301. An N type emitter 307 is provided facing with the P type emitter 304 interposing an N type base 305 and a P type base 306 between them. The N type emitter 307 has structure extended up to a bonding pad part 300B. A gate electrode 303 is provided on the P type base 306 as to interposed the N type emitter 307 between them. At the bonding pad part 300B, a silicon oxide film 308 is interposed between a cathode electrode 302 and the N type emitter.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：为了扩大半导体器件的可控耐受电流量，其中N型发射极连续延伸到阴极电极的焊盘部分的下部，并插入氧化硅膜等的绝缘体在阴极电极和N型发射极之间。构成：开关功能部件300A构成具有P型发射极304与阳极301短路的结构的PNPN晶闸管。设置有N型发射极307，P型发射极304与N型基极305 和它们之间的P型基底306。 N型发射器307具有延伸到接合焊盘部分300B的结构。在P型基底306上设置有用于在它们之间插入N型发射体307的栅电极303。在接合焊盘部分300B处，氧化硅膜308插在阴极电极302和N型发射极之间。

4. 发明专利

JPS6353702B2 失效
公开(公告)号：JPS6353702B2
公开(公告)日：1988-10-25
申请号：JP316481
申请日：1981-01-14
申请人： HITACHI LTD
发明人： SAKURADA SHUROKU , MATSUZAKI HITOSHI , IKEDA HIROHIKO , OOTA TAKEHIRO
IPC分类号： H01L29/73 , H01L21/331 , H01L23/482 , H01L29/08 , H01L29/417 , H01L29/74 , H01L29/744

5. 发明专利

JPS6165455A Formation of metallic pattern 失效
标题翻译：形成金属图案
公开(公告)号：JPS6165455A
公开(公告)日：1986-04-04
申请号：JP18635284
申请日：1984-09-07
申请人： Hitachi Ltd
发明人： NAGABORI WATARU , NISHIYAMA TATSUO , OOTA TAKEHIRO
IPC分类号： H01L21/3205 , H01L21/88
摘要： PURPOSE:To prevent the contamination of the metallic layer surface with thermal decomposition gas and its deposition by burning off a photo resist layer under a reduced pressure. CONSTITUTION:The photo resist layer 3 is formed by coating in the partof no need of metallic patterns. After a metal 4 is evaporated over the surface of the semiconductor substrate 1, a very small air gap is formed between an SiO2 layer 2 and the metallic layer 4 by burning off the photo resist layer 3 under a reduced pressure. Then, the thermal decomposition gas of photo resist is diffused by dilution and immediately exhausted to the vacuum exhaust system. This action prevents the contamination of the surface of the metallic layer 4 with thermal decomposition gas and its deposition.
摘要翻译：目的：防止金属层表面被热分解气体污染，并通过在减压下烧掉光致抗蚀剂层而沉积。构成：光刻胶层3通过不需要金属图案的方式涂覆而形成。在半导体衬底1的表面上蒸发金属4之后，通过在减压下烧掉光刻胶层3，在SiO 2层2和金属层4之间形成非常小的气隙。然后，光刻胶的热分解气体通过稀释扩散，并立即排出到真空排气系统。这种作用防止金属层4的表面被热分解气体及其沉积物污染。

6. 发明专利

JPS5610967A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5610967A
公开(公告)日：1981-02-03
申请号：JP8496479
申请日：1979-07-06
申请人： HITACHI LTD
发明人： SHIMIZU YOSHITERU , NAGANO TAKAHIRO , SAKURADA SHIYUUROKU , OOTA TAKEHIRO
IPC分类号： H01L29/08 , H01L29/74 , H01L29/744
摘要： PURPOSE:To obtain the preferable arc extinguishing characteristics of the semiconductor device by forming a rectangular emitter of cathode side on one main surface of a circular semiconductor substrate, forming a control electrode on an exposed base layer, forming an emitter of anode side at the cathode and emitter projected portion on the other main surface thereof, and connecting it with an emitter shorting layer. CONSTITUTION:An emitter layer 6 of cathode side is radially formed in rectangular state from a half portion of radius on one main surface of an Si substrate 1, and a P-N junction between the base layer 5 and the layer 6 is exposed in mesa portion. An emitter 3 of anode side is formed on the projected portion of the exposed junction end to the anode side to form a shorting emitter architecture with an emitter shorting layer 2. A cathode electrode 9 is attached onto the layer 6, a control electrode 8 is attached onto the layer 5, a lead wire 10 is attached to the central portion P, and an anode electrode 3 is attached onto the other main surface. Since the layer 2 is expanded in sector state to increase the shorting emitter effect in this configuration, it can increase the stored carrier drawing effect to execute uniform arc distinguishing operation to thus eliminate the concentration of the current to partial portion so as to obtain a high speed arc extinguishing operation therein.

7. 发明专利

JPS5511314A THYRISTOR 失效
公开(公告)号：JPS5511314A
公开(公告)日：1980-01-26
申请号：JP8303478
申请日：1978-07-10
申请人： HITACHI LTD
发明人： OOTA TAKEHIRO , AKABANE KATSUMI , TAKITA JIYUNICHI , NAKASHIMA YOUICHI , SUZUKI TAKASHI , KOJIMA ISAO
IPC分类号： H01L29/74
摘要： PURPOSE:To obtain a high dv/dt insulation resistance, by providing a control emitter of the same conducting type as an N emitter along a ring gate on the side not facing an N emitter of the ring gate. CONSTITUTION:On the side not facing N emitter 8 of ring gate electrode 3, ring- shaped control emitter 11 having the same conducting type as N emitter 8 is formed along ring gate electrode 3. By this control emitter 11, it is made possible to adjust resistor R2 in P base 7 between ring gate electrode 3 and ring 4 and to check the increase of the gate current not contributing to the firing of the main SCR. By this, the firing current of the main SCR can be reduced and at the same time a high dv/dt insulation resistance can be obtained.

8. 发明专利

JPS5357421A COMMUTATION COMPENSATOR FOR DC MACHINE 失效
公开(公告)号：JPS5357421A
公开(公告)日：1978-05-24
申请号：JP13285476
申请日：1976-11-05
申请人： HITACHI LTD
发明人： SUZUKI SUMIO , OKUYAMA TOSHIAKI , OOTA TAKEHIRO
IPC分类号： H02P7/06
摘要： PURPOSE:To get time lag of commutation compensatory current reduced through constitution of exciter unit composed of a thyristor converter and a multiplication unit which calculates product of a signal proportional to armature current and a signal proportional to revolution speed.

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