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1. 发明专利

JPS6353702B2 失效
公开(公告)号：JPS6353702B2
公开(公告)日：1988-10-25
申请号：JP316481
申请日：1981-01-14
申请人： HITACHI LTD
发明人： SAKURADA SHUROKU , MATSUZAKI HITOSHI , IKEDA HIROHIKO , OOTA TAKEHIRO
IPC分类号： H01L29/73 , H01L21/331 , H01L23/482 , H01L29/08 , H01L29/417 , H01L29/74 , H01L29/744

2. 发明专利

JPS60187058A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60187058A
公开(公告)日：1985-09-24
申请号：JP4212484
申请日：1984-03-07
申请人： HITACHI LTD
发明人： SAKURADA SHIYUUROKU , IKEDA HIROHIKO
IPC分类号： H01L29/74 , H01L29/06 , H01L29/08 , H01L29/36 , H01L29/744
摘要： PURPOSE:To produce a GTP thyristor with excellent current interrupting capacity while maintaining inverse voltage blocking function by means of setting up the impurity concentration of P type layer adjoining an N base lower than that of P-emitter layer. CONSTITUTION:Within a P-emitter (PE) layer-N base (NB)-P base (PB) layer-N- emitter (NE) layer structure, a P type layer (pi layer) containing impurity is provided on the PE layer adjoing the NB layer. In this case, the impurity concentration of pi-layer is set up lower than that of the NB layer. When the impurity concentration of PE layer is sufficiently lower than that of the NE layer, the implanting efficiency gamma is almost equivalent to 0. Therefore, the implanting efficiency of P-N junction may be restricted to low value by providing the pi-layer on the PE layer coming into contact with the NB layer. This structure becomes a structure wherein the interval between an emitter and a base of PNP transistor TR is shunted by a capacity C. Resultantly the current amplitude ratio of the PNPTR may be reduced in case a GTO thyristor is turned ON, while in case it is turned OFF, the PNPTR may be turned OFF quickly.

3. 发明专利

JPS5834966A GATE TURN OF THYRISTOR 失效
公开(公告)号：JPS5834966A
公开(公告)日：1983-03-01
申请号：JP13279581
申请日：1981-08-26
申请人： HITACHI LTD
发明人： HARADA EIJI , SAKURADA SHIYUUROKU , IKEDA HIROHIKO , NAGANO TAKAHIRO
IPC分类号： H01L29/744 , H01L29/74
摘要： PURPOSE:To enable a good characteristic of each kind and a process of high power, by providing a fifth semiconductor layer beside four semiconductor layers as a thyristor and low-resistance-contacting the first main electrode to the first and fifth semiconductor layers. CONSTITUTION:A GTO unit 1 has a p type emitter layer 2, an n type base layer 3, p type base layer 4, an n type emitter layer 5 and an n type collector layer 6 which is buried in the p type emitter layer 2. The n type collector layer 6 is provided on a part whereon the n type emitter layer 5 is vertically projected on the lower main surface. To the p type emitter layer 2 and the n type collector layer 6, an anode electrode (first main electrode) 7 is low-resistance- contacted on the lower main surface (first main surface). On the upper main surface (second main surface), a gate electrode (control electrode) 8 is low- resistance-contacted to the p type base layer 4, and a cathode electrode (second main electrode) 9 is low-resistance-contacted to the n type emitter layer 5.

4. 发明专利

JPS5731378A Semiconductor current switching circuit 失效
标题翻译：半导体电流开关电路
公开(公告)号：JPS5731378A
公开(公告)日：1982-02-19
申请号：JP10514780
申请日：1980-08-01
申请人： Hitachi Haramachi Semiconductor Ltd , Hitachi Ltd
发明人： SUGAYAMA SHIGERU , SAKURADA SHIYUUROKU , IKEDA HIROHIKO
IPC分类号： H03K17/73 , H02M7/515
CPC分类号： H02M7/5155
摘要： PURPOSE:To enhance the switching reliability of a switching circuit composed of a current limiting reactor, a semiconductor switching element, a flywheel diode, and a snubber circuit by connecting a diode antiparallel to the switching element having no reverse blocking. CONSTITUTION:Only one phase of an inverter used for motor control or the like is shown. A switching circuit composed of current limiting reactors 38, 39, semiconductor switching elements having no reverse blocking (e.g., short emitter type gate turn off thyristors) 6, 9, flywheel diodes 12, 15, elements 18, 30, 14 and 21, 33, 37 as snubber circuit is connected between the DC input terminals 1 and 2, and AC output is produced from the terminal 3. Diodes 40, 41 are so connected additionally as to be antiparallel to the elements 6, 9 to reduce the reverse voltage applied to the elements 6, 9.
摘要翻译：目的：通过将二极管反平行连接到不具有反向阻断的开关元件来提高由限流电抗器，半导体开关元件，续流二极管和缓冲电路构成的开关电路的开关可靠性。示意图：仅示出了用于电动机控制等的逆变器的一相。由限流电抗器38,39组成的开关电路，不具有反向阻塞的半导体开关元件（例如，短的发射极型栅极截止晶闸管）6,9，飞轮二极管12,15，元件18,30,14和21,33 ，37是缓冲电路连接在直流输入端子1和2之间，并且从端子3产生交流输出。二极管40,41另外被连接成与反向平行的元件6,9相连，以减少施加的反向电压到元件6,9。

5. 发明专利

JPS51123063A FABRICATION TECHNIQUE OF ELECTRODES FOR SEMICONDUCTOR DEVICES 失效
公开(公告)号：JPS51123063A
公开(公告)日：1976-10-27
申请号：JP4745975
申请日：1975-04-21
申请人： HITACHI LTD
发明人： KOIZUMI JIYUNICHI , NAGANO TAKAHIRO , YOKOTA TAKESHI , SANBE ISAMU , IKEDA HIROHIKO , YAGI HIDEYUKI
IPC分类号： H01L21/60 , H01L21/28
摘要： PURPOSE:To prevent the occurrence of inferior contact between the electrode and and the solder in fabricating the electrode composed of three metal layers; Al, Ni and Ag. This can be achieved by making the Ni-layer thicker than the Allayer by more than 4 times thereby preventing infiltration of Al atoms into the Ag-layer through the Ni-layer.

6. 发明专利

JPH06233887A WASHING MACHINE 失效
公开(公告)号：JPH06233887A
公开(公告)日：1994-08-23
申请号：JP2236393
申请日：1993-02-10
申请人： HITACHI LTD
发明人： IKEDA HIROHIKO , MOROZUMI KAZUNORI
IPC分类号： D06F13/02 , D06F37/40
摘要： PURPOSE:To provide the optimum layout of the semiconductor integrated circuit of a washing machine driving a washing motor with the semiconductor integrated circuit storing an inverter. CONSTITUTION:A semiconductor integrated circuit 10 storing an inverter is arranged at the bottom section of the housing 9a of a washing motor 9. The semiconductor integrated circuit 10 is arranged near the washing motor 9, the controllability and responsiveness of the motor 9 are improved, and no cooling means is required to be provided separately.

7. 发明专利

JPS604260A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS604260A
公开(公告)日：1985-01-10
申请号：JP11096283
申请日：1983-06-22
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： SAKURADA SHIYUUROKU , IKEDA HIROHIKO , ONO MASAFUMI
IPC分类号： H01L29/74 , H01L23/051
摘要： PURPOSE:To obtain a gate turn-OFF thyristor which can control large current by improving the structure of uniform contact of a gate electrode part with a cathode electrode part. CONSTITUTION:In accordance with the groups of thyristor elements arranged by splitting into the center A and the outer periphery B of a substrate 100, two cathode side compensating plates 111 and 112 arranged to disk form in the former and ring form concentrically thereto, which are in sliding contact with the cathode electrode 106. Each plate 111 and 112 is in sliding contact with a cathode side coolant 113. A gate electrode plate 118 of ring form is arranged in the middle between said two plates 111 and 112, while the intermediate gate connection C of the semiconductor substrate 100 is in sliding contact with said plate 118. Since the plate 118 receives pressure force from the coolant 113 via insulation spacer 119 and an elastic element 120 such as a spring, the contact thereof with the connection C in a large area is enabled.

8. 发明专利

JPH0139224B2 失效
公开(公告)号：JPH0139224B2
公开(公告)日：1989-08-18
申请号：JP11515682
申请日：1982-07-01
申请人： HITACHI LTD
发明人： HARADA EIJI , MATSUZAKI HITOSHI , IKEDA HIROHIKO , OOZEKI TOSHUKI
IPC分类号： H01L29/744 , H01L21/60 , H01L23/482 , H01L29/74

9. 发明专利

JPS5849023B2 JPS5849023B2 - 失效
标题翻译：空值
公开(公告)号：JPS5849023B2
公开(公告)日：1983-11-01
申请号：JP13794877
申请日：1977-11-18
申请人： Hitachi Ltd
发明人： SHINNO JUJI , IKEDA HIROHIKO , SAKURADA SHUROKU
IPC分类号： H01L21/60 , H01L21/28 , H01L21/52 , H01L23/48 , H01L29/861
CPC分类号： H01L24/05 , H01L24/33 , H01L2224/04042 , H01L2224/32225 , H01L2224/48 , H01L2224/48463 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01024 , H01L2924/01028 , H01L2924/01047 , H01L2924/01082 , H01L2924/01093 , H01L2924/014 , H01L2924/12036 , H01L2924/00014 , H01L2224/05556 , H01L2924/00 , H01L2924/00012

10. 发明专利

JPS57117276A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS57117276A
公开(公告)日：1982-07-21
申请号：JP316481
申请日：1981-01-14
申请人： Hitachi Ltd
发明人： SAKURADA SHIYUUROKU , MATSUZAKI HITOSHI , IKEDA HIROHIKO , OOTA TAKEHIRO
IPC分类号： H01L29/73 , H01L21/331 , H01L23/482 , H01L29/08 , H01L29/417 , H01L29/74 , H01L29/744
CPC分类号： H01L29/41716 , H01L23/4824 , H01L29/0804 , H01L29/0839 , H01L29/41708 , H01L29/74 , H01L2924/0002 , Y10S148/14 , H01L2924/00
摘要： PURPOSE: To enlarge controllable withstand current quantity of a semiconductor device by a method wherein an N type emitter is extended continuously up to the lower part of bonding pad part of a cathode electrode, and an insulator of silicon oxide film, etc., is interposed between the cathode electrode and the N type emitter.
CONSTITUTION: A switching functional part 300A constitutes a P-N-P-N thyristor having structure in which a P type emitter 304 is short-circuited to an anode electrode 301. An N type emitter 307 is provided facing with the P type emitter 304 interposing an N type base 305 and a P type base 306 between them. The N type emitter 307 has structure extended up to a bonding pad part 300B. A gate electrode 303 is provided on the P type base 306 as to interposed the N type emitter 307 between them. At the bonding pad part 300B, a silicon oxide film 308 is interposed between a cathode electrode 302 and the N type emitter.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：为了扩大半导体器件的可控耐受电流量，其中N型发射极连续延伸到阴极电极的焊盘部分的下部，并插入氧化硅膜等的绝缘体在阴极电极和N型发射极之间。构成：开关功能部件300A构成具有P型发射极304与阳极301短路的结构的PNPN晶闸管。设置有N型发射极307，P型发射极304与N型基极305 和它们之间的P型基底306。 N型发射器307具有延伸到接合焊盘部分300B的结构。在P型基底306上设置有用于在它们之间插入N型发射体307的栅电极303。在接合焊盘部分300B处，氧化硅膜308插在阴极电极302和N型发射极之间。

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