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1. 发明专利

JPS561525A EPITAXIAL GROWING METHOD OF SILICON CRYSTAL 失效
公开(公告)号：JPS561525A
公开(公告)日：1981-01-09
申请号：JP7566179
申请日：1979-06-18
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , KOZUKA KOUJI , KOGIRIMA MASAHIKO , MAKI MICHIYOSHI
IPC分类号： C23C16/24 , H01L21/205
摘要： PURPOSE:To manufacture numerous epitaxial growth substrates of good quality through one time of treatment, by causing the unequalized reaction of SiCl2 to epitaxially grow Si crystal on the Si substrates. CONSTITUTION:Source gas of SiCl4 is conducted from a pipe 31 to a reaction tube 2 through a pipe 3. Carrier gas of H2, N2, Ar or the like is conducted from another pipe 32 into the reaction tube through the pipe 3. The SiCl4 gas reacts with the Si of an Si pellet layer 4 located in the high-temperature zone of the reaction tube 2 to produce SiCl2. The SiCl2 is conveyed by the carrier gas to a downstream low-temperature zone wherein Si substrates 5 are placed. The SiCl2 performs unequalized reaction to epitaxially grow thin films of Si crystal on the substrates 5. The pressure in the reaction tube 2 needs to be kept as low as 0.1-10 Torr in order to accelerate the diffusion of the source gas to the substrates 5, make the internal resistance of the substrates and the thickness of the films uniform and prevent the gas-phase pyrolysis of the SiCl4.

2. 发明专利

JPS55107780A ETCHING METHOD 失效
公开(公告)号：JPS55107780A
公开(公告)日：1980-08-19
申请号：JP1225079
申请日：1979-02-07
申请人： HITACHI LTD
发明人： KURE TOKUO , IIDA SHINYA , MAKI MICHIYOSHI , MIZUTANI TATSUMI
IPC分类号： H01L21/302 , C23F1/00 , C23F4/00 , H01L21/306 , H01L21/3065
摘要： PURPOSE:To form an etching section having excellent dimensional accuracy at a high selectivity, by, in etching of silicon material to be etched by use of reactive sputtering method, using chloride gas as the sputtering gas. CONSTITUTION:At a prescribed position in a high frequency sputtering apparatus equipped with flat plate electrodes facing to each other is placed a material to be etched made of single-crystal or polycrystal silicon, and etching is conducted using chloride such as PCl3, CCl4 as a sputtering gas, then the etching speed reaches the maximum about 170mm/min., at a power density 0.3W/cm , and PCl3 gas press. about 6Pa. The etching speed is very small for Si3N4 etc. at the same gas press. Hence use of Si3N4 as the mask makes it possible to etch silicon with a high selectivity.

3. 发明专利

JPS5571692A SINGLE CRYSTAL SILICON GROWING METHOD 失效
公开(公告)号：JPS5571692A
公开(公告)日：1980-05-29
申请号：JP14237478
申请日：1978-11-20
申请人： HITACHI LTD
发明人： KOGIRIMA MASAHIKO , MAKI MICHIYOSHI , TAMURA MASAO
IPC分类号： C30B1/08 , C30B1/02 , C30B29/06
摘要： PURPOSE:To accelerate the operation speed of a semiconductor device as compared to a conventional one by applying laser beams to an amorphous silicon film coated on a sapphire or spinel crystal to epitaxial-grow silicon. CONSTITUTION:On sapphire substrate 1, less than about 1mu thick silicon layer 2 is coated by thermal decomposition of monosilane (SiH4) or other means such as sputtering or vacuum deposition. By applying carbon dioxide gas laser 3 of about 1J/cm to layer 2 from the surface, annealing is carried out. Laser 3' may be applied from the substrate side. Thus, amorphous silicon 2 is single-crystallized by epitaxial growth on sapphire 1. Unlike a usual SOS crystal little impurities such as Al are taken in from the substrate, resulting in high purity silicon.

4. 发明专利

JPS54110783A SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURE 失效
公开(公告)号：JPS54110783A
公开(公告)日：1979-08-30
申请号：JP1826078
申请日：1978-02-20
申请人： HITACHI LTD
发明人： TAKANO YUKIO , KOGIRIMA MASAHIKO , AOKI SHIGERU , MAKI MICHIYOSHI , KATOU SHIGEO
IPC分类号： H01L21/205 , H01L21/30 , H01L21/304 , H01L21/322
摘要： PURPOSE:To obtain a substrate featuring the reduced crystalline defects by giving the mechanical grinding to the back of the Si substrate before the mechanical/ chemical mirror surface polishing to form the working distortion and then giving the chemical etching to form the heat oxide film on the back of the substrate respectively. CONSTITUTION:First, the working distortion layer is formed via the grindstone to the water. The depth of the distortion increases as the size of the abrasive grain increases, and the depth on the (111) surface features about 0.8 times as much as that on the (100) surface. If the heat treatment is applied immediately, the displacement is caused at the distortion layer. And the depth of the displacement increases suddenly at 15mum or more of the distortion layer, giving the evil effect to the characteristics. While a large curving is produced when the grinding is given only to one surface of the wafer, resulting to the crack occurrence at the mirror surface working time as well as to the uneven thickness. When the distortion layer is etched off about 0.5mum with the 1000 deg.C heat treatment applied, the curvature can be reduced down almost to zero. Thus, a flat substrate can be obtained with the reduced crystalline defects.

5. 发明专利

JPS543472A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS543472A
公开(公告)日：1979-01-11
申请号：JP6790477
申请日：1977-06-10
申请人： HITACHI LTD
发明人： TAMAOKI YOUICHI , HONMA KOUJI , NANBA MITSUO , HIGUCHI HISAYUKI , MAKI MICHIYOSHI
IPC分类号： H01L21/306 , H01L21/302
摘要： PURPOSE:To obtain a flat isolation region with no polishing, by flowing an epitaxial layer on the semiconductor substrate on which a buried layer is formed and then drilling the concave groove to the insulator film coated on the epitaxial layer with eaves caused to the insulator film in order to form an oxide layer there.

6. 发明专利

JPS54591A ELEMENT ISOLATING METHOD 失效
公开(公告)号：JPS54591A
公开(公告)日：1979-01-05
申请号：JP6482477
申请日：1977-06-03
申请人： HITACHI LTD
发明人： KOGIRIMA MASAHIKO , SAIDA HIROJI , MAKI MICHIYOSHI
IPC分类号： H01L21/76
摘要： PURPOSE:To obtain isolating regions of good flatness by providing holes of a depth sufficient for interelement isolation within a semiconductor substrate from the substrate surface and burying here with SiO2, Si3N4, Al2O3 or other by using a laser beam or ion beam vapor deposition or a plasma chemical transport method.

7. 发明专利

JPS5320855A DIFFUSING APPARATUS 失效
公开(公告)号：JPS5320855A
公开(公告)日：1978-02-25
申请号：JP9483776
申请日：1976-08-11
申请人： HITACHI LTD
发明人： KOBAYASHI KAZUNARI , WADA MINORU , MAKI MICHIYOSHI
IPC分类号： C30B31/22 , H01L21/22
摘要： PURPOSE:To readily control the evaporation rate of diffusion source by providing a discharge generating means to a diffusing apparatus.

8. 发明专利

JPS52152171A WAFER ALIGNMENT METHOD 失效
公开(公告)号：JPS52152171A
公开(公告)日：1977-12-17
申请号：JP6881676
申请日：1976-06-14
申请人： HITACHI LTD
发明人： KISHINO SEIGOU , AOKI SHIGERU , MAKI MICHIYOSHI , HONMA KOUJI , UEHARA KEIJIROU
IPC分类号： H01L21/027 , H01L21/302
摘要： PURPOSE:To improve the contrast of moire patterns and perform mask alignment effectively by providing straight line or curve groups of effective widths on a wafer and photo mask.

9. 发明专利

JPS52133086A GASPHASE GROWTH 失效
公开(公告)号：JPS52133086A
公开(公告)日：1977-11-08
申请号：JP4857476
申请日：1976-04-30
申请人： HITACHI LTD
发明人： SHINTANI AKIRA , KOGIRIMA MASAHIKO , HONMA KOUJI , KAWAMURA MASAO , SAIDA KOUJI , TAMAOKI YOUICHI , MAKI MICHIYOSHI
IPC分类号： C30B25/14 , H01L21/205 , H01L21/365
摘要： PURPOSE:To make membrane thickness even and impurity concentration distribution uniform by arranging samples horizontally in a reaction vessel installed with a reaction gas supply nozzle and an exhaust nozzle opposite to the supply nozzle, both nozzles having bradth not smaller than the diameter of the susceptor, and by revolving the samples to carry out chemical gas phase growth.

10. 发明专利

JPS52117083A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS52117083A
公开(公告)日：1977-10-01
申请号：JP3364776
申请日：1976-03-29
申请人： HITACHI LTD
发明人： SAKAI YOSHIO , TAKANO YUKIO , UEHARA KEIJIROU , MAKI MICHIYOSHI
IPC分类号： H01L29/78 , H01L27/12 , H01L29/04 , H01L29/786
摘要： PURPOSE:To avoid formation of a parasitic transistor and disconnection by forming on an insulating substrate striped Si all the surfaces of which are parallel to the (100) surface and flattening the surface of the Si by confining insulating material therein.

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