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1. 发明专利

JPS6211504B2 失效
公开(公告)号：JPS6211504B2
公开(公告)日：1987-03-12
申请号：JP14237378
申请日：1978-11-20
申请人： HITACHI LTD
发明人： KOGIRIMA MASAHIKO , YAGI KUNIHIRO , TAMURA MASAO , MAKI MICHOSHI
IPC分类号： H01L21/74 , H01L21/027 , H01L21/20 , H01L21/205 , H01L21/316 , H01L21/76

2. 发明专利

JPS5974622A Electrode of semiconductor device and manufacture thereof 失效
标题翻译：半导体器件的电极及其制造
公开(公告)号：JPS5974622A
公开(公告)日：1984-04-27
申请号：JP18455082
申请日：1982-10-22
申请人： Hitachi Ltd
发明人： KIKUCHI AKIRA , SAIDA HIROJI , MIZUO SHIYOUICHI , KOGIRIMA MASAHIKO
IPC分类号： H01L29/43 , H01L21/28
CPC分类号： H01L21/28
摘要： PURPOSE:To reduce the required area and insure a high reliability as an electrode of a transistor with a shallow emitter depth by forming contacts on a semicondctor substrate with polycrystalline silicon, metal silicide and tangsten. CONSTITUTION:Silicon compound layers 12, 13 on an Si substrate 11 which is to be a base of a transistor are removed by photoetching and an emitter forming part is exposed and polycrystalline Si 14 is selectively deposited only on Si under a prescribed condition. Then an impurity atom such as arsenic is introduced into Si 14 and after an emitter is formed by heat diffusion, palladium, platinum and Ni are deposited and metal silicide 15 is formed by thermal treatment. Then etching of metal is carried out in such a manner that only silicide 15 remains on Si 14 and tangsten 16 is deposited selectively on silicide 15 under a prescribed condition. Finally, Al and Al alloy 17 are deposited on the upper surface and an electrode is formed by photoetching.
摘要翻译：目的：通过在具有多晶硅，金属硅化物和tangsten的半基板上形成接触，减少所需面积并确保具有浅发射极深度的晶体管的电极的高可靠性。构成：通过光刻除去要作为晶体管的基极的Si衬底11上的硅化合物层12,13，并且发射极形成部分被暴露，并且多晶Si 14仅在规定条件下选择性地沉积在Si上。然后将诸如砷的杂质原子引入Si 14中，并且在通过热扩散形成发射体之后，沉积钯，铂和Ni，并通过热处理形成金属硅化物15。然后以这样的方式进行金属蚀刻，使得只有硅化物15保留在Si 14上，并且在规定的条件下选择性地沉积钨16。最后，Al和Al合金17沉积在上表面上，并通过光刻形成电极。

3. 发明专利

JPS58200575A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS58200575A
公开(公告)日：1983-11-22
申请号：JP8300882
申请日：1982-05-19
申请人： Hitachi Ltd
发明人： SUGASHIRO SHIYOUJIROU , ITOU HIROYUKI , TAMAOKI YOUICHI , KOGIRIMA MASAHIKO
IPC分类号： H01L29/73 , H01L21/331 , H01L21/76 , H01L29/72
CPC分类号： H01L29/72
摘要： PURPOSE:To reduce the area of transistors and decrease the base resistance by a method wherein an emitter is formed in a region at a constant distance from the region of insulation film isolation wherein a U-shaped isolation by Si burial is used. CONSTITUTION:A collector buried layer 22 and an Si epitaxial layer 23 are formed on the surface of an Si semiconductor substrate 21, then a groove 26 is formed by etching, and thus an Si oxide film 27 is formed. The isolation is formed by forming a polycrystalline Si 31 after forming a base diffused layer 28, an Si nitride film 29, and an Si oxide film 30. A molybdenum film 32 is adhered, thus metals silicide 33 and 34 are formed by performing heat-treatment, and then a hole 35 for emitter formation is formed. Finally, the emitter diffused layer 37 is formed by ion implantation, after removing the Mo silicide, forming an Si oxide film 36 by thermal oxidation of the polycrystalline Si 31, and etching the Si nitride film 29.
摘要翻译：目的：为了减小晶体管的面积并降低基极电阻，其中发射极形成在距绝缘膜隔离区域恒定距离的区域，其中使用通过Si埋入的U形隔离。构成：在Si半导体衬底21的表面上形成集电极埋层22和Si外延层23，然后通过蚀刻形成沟槽26，从而形成Si氧化物膜27。通过在形成基底扩散层28，Si氮化物膜29和Si氧化物膜30之后形成多晶Si 31形成隔离。粘附钼膜32，因此通过进行热处理而形成金属硅化物33和34，处理，然后形成用于发射体形成的孔35。最后，通过离子注入形成发射极扩散层37，在除去Mo硅化物之后，通过多晶Si 31的热氧化形成Si氧化膜36，并蚀刻出氮化硅膜29。

4. 发明专利

JPS58135633A EPITAXIAL GROWTH OF SILICON 失效
公开(公告)号：JPS58135633A
公开(公告)日：1983-08-12
申请号：JP1767482
申请日：1982-02-08
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , KOZUKA KOUJI , SAIDA HIROJI , KOGIRIMA MASAHIKO , KURODA SATOYOSHI
IPC分类号： H01L21/205 , C30B25/10
摘要： PURPOSE:To reduce deposition of silicon to the wall of a reaction tube to the minimum, and to imrpve distribution of film thickness and distribtuion of specific resistance of the deposited film by a method wherein two temperature zones are provided, and epitaxial growth of silicon is performed in the low temperature zone according to unequalizing reaction. CONSTITUTION:The reaction tube 2 is set in an electric resistance furnace 1 having the three zones, and the two temperature zones of the high temperature zone of 1,050 deg.C and the low temperature zone provided with the temperature grade reducing by the ratio 1 deg.C/cm are bestowed to the temperature thereof according to the electric furnace. The numeral 3 shows a jig, silicon wafers are set vertically thereon, and the jig is sent to the prescribed position of the low temperature zone according to a hermetically sealed boat loader 5. SiH2Cl2 is used as silicon source gas, PH3 gas diluted with H2 is used as doping gas, and 100% SiH2Cl2 of 0.5l/min, PH3 of 0.05l/min are supplied to the reaction tube through gas supply piping 6 when epitaxial reaction is to be performed. Moreover, the system is exhausted by a vacuum pump consisting of a Roots pump 8, and a rotary pump 9 through a gas coller 7, and pressure is held at 13Pa.

5. 发明专利

JPS5869704A DIRECT NITRIDING PROCESS 失效
公开(公告)号：JPS5869704A
公开(公告)日：1983-04-26
申请号：JP16432081
申请日：1981-10-16
申请人： HITACHI LTD
发明人： SHINTANI AKIRA , KUSAKA TAKAHISA , KOGIRIMA MASAHIKO , MATSUBARA HIROKAZU
IPC分类号： H01J37/32 , B01J19/08 , C01B21/064 , C01B21/068 , H01L21/318
摘要： PURPOSE:To form a uniform nitride film to a surface of a semiconductor material by imposing an electrical field to the material using the material as a cathode while exposing the material to a nitrogen source comprising high purity nitrogen or ammonia gas or its plasma at high temperature. CONSTITUTION:The cleaned specimen wafer 1 is placed on the holder 2 made of silicon, and heated at about 700 deg.C in the electric furnace 3. The wafer is connected with the minus terminal of the constant voltage DC source 5 via the holder 2, and the plus terminal is connected with the opposite electrode 6 made of silicon. The furnace is evacuated as shown by the arrow 9 to remove oxygen, and nitrogen is introduced (the arrow 10) into the furnace. Plasma is generated between the electrodes 8 and 8 by the high frequency electric source 7. A nitride film having an average thickness of about 100Angstrom can be obtained by imposing the electric potential of about -200V to the wafer 1 and carrying out the reaction for about 1hr. The above process also enables the simultaneous direct nitriding of plurality of specimen pieces.

6. 发明专利

JPS584924A FORMING METHOD FOR SEMICONDUCTOR DEVICE ELECTRODE 失效
公开(公告)号：JPS584924A
公开(公告)日：1983-01-12
申请号：JP10121481
申请日：1981-07-01
申请人： HITACHI LTD
发明人： SUGASHIRO SHIYOUJIROU , KOGIRIMA MASAHIKO , YAMAMOTO NAOKI
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768
摘要： PURPOSE:To obtain an electrode with no danger of destroying the junction face within a substrate and to improve integration by forming a Si layer on the Si substrate surface on which the electrode is to be formed and coating this Si layer with a metal film to obtain a metal silicide. CONSTITUTION:Impurity dope layer 2 is formed by diffusion or ion implantation in the surface region of a semiconductor substrate 1, and SiO2 film 3 is formed by heat oxidation or the CVD method on the surface of this substrate. A contact hole 4 is made with phto etching in such a manner that it correponds to the layer 5 is selectively formed in this hole by the epitaxial growth, and the entire surface including the Si layer 5 is coated with refractory metal film 6 of Mo, Ta, Ti and W, etc. Applying heat treatment of above 500 deg.C causes solid reaction between the layers 6 and 5, thereby forming metal silicide layer 8 which is used as an electrode for the layer 2. This prevents junction 7 from being destroyed since the layer 8 does not penetrate the layer 2. Then, the unsilicified layer 6 is removed and wiring layer 9 being in contact with the layer 8 is bonded to the film 3 while being spread over this film.

7. 发明专利

JPS57115874A MANUFACTURE OF SCHOTTKY DIODE 失效
公开(公告)号：JPS57115874A
公开(公告)日：1982-07-19
申请号：JP16535580
申请日：1980-11-26
申请人： HITACHI LTD
发明人： KIKUCHI AKIRA , KOGIRIMA MASAHIKO
IPC分类号： H01L29/47 , H01L29/872
摘要： PURPOSE:To obtain the Schottky diode characterized by small dispersion in characteristics and easy control of voltage value in the forward direction by implanting P of about 1X10 -2X10 cm in an Si layer of a positive electrode part, and thereafter depositing a Pt layer on the Si layer. CONSTITUTION:Sb is selectively diffused in a P type Si substrate 11 and an N type embedded region 12 is formed. On the entire surface including said region, a nondoped Si layer 13 is epitaxially grown. The layer 13 is selectively removed by etching with SiO2, Si3N4, or the like as a mask. then, a thick SiO2 film 14 is formed on the substrate 11 whidh is exposed by oxidation, elements are separated, and the SiO2 used as the mask is removed. The positive electrode part 15 and a negative electrode part 16 are formed in the redmaining layer 13. At this time, Pt is used in the positive electrode part, and P of 1X10 -2X10 cm is implanted in the layer 13 before the formation thereof. P is diffused in the layer 13 beneath the negative part 16 so as to give high concentration. In this way, P is implanted in the layer 13 beneath the positive electrode 15, and the desired low voltage value in the forward direction is obtained.

8. 发明专利

JPS54146957A Doping gas cntrol method in semiconductor process 失效
标题翻译： DOPING GAS CNTROL方法在半导体工艺中
公开(公告)号：JPS54146957A
公开(公告)日：1979-11-16
申请号：JP5450078
申请日：1978-05-10
申请人： Hitachi Ltd
发明人： TAKAMI KATSUMI , HONMA NORIAKI , KOGIRIMA MASAHIKO , MAKI MICHIYOSHI
IPC分类号： H01L21/205 , H01L21/18 , H01L21/22
摘要： PURPOSE: To obtain a grown layer having a density as set, by obtaining the ultraviolet ray absorption quantity of doping gas by causing this gas to pass through ultraviolet rays of approximately 1900 Å wave length, and detecting the impurity density in this gas on a basis of the quantity above to control density.
CONSTITUTION: Semiconductor substrate 32 put on susceptor 31 is stored in reaction vessel 30, and material gas adjusted in material gas supply system 35 is supplied from material gas supply tube 33 provided in vessel 30 and is exhausted from exhaustion tube 34. In this supply system 35, carrier gas source 36, semiconductor compound gas source 40 and doping gas source 44 such as PH
3 amd AsH
2 are provided, and detection cell 47 is arranged in doping gas flowing path 48 and is connected to detection controller 49 provided in the external. Supply system 35 is constituted in this manner to cause ultraviolet rays of approximately 1900 Å wave length to pass through cell 47, and the passing ultraviolet ray quantity is received by controller 49 and is converted to electric signals. After that, this output value is compared with the reference value, and a servo unit is used to control flowing quantity adjustment equipment 46 of doping gas source 44.
COPYRIGHT: (C)1979,JPO&Japio
摘要翻译：目的：为了获得具有密度的生长层，通过使该气体通过大约1900埃的波长的紫外线，获得掺杂气体的紫外线吸收量，并且基于该气体的杂质浓度检测以上数量来控制密度。构成：将放置在基座31上的半导体基板32储存在反应容器30中，在原料气体供给系统35中调整的原料气体从设置在容器30中的原料气体供给管33供给，并从排气管34排出。在该供给系统如图35所示，提供载气源36，半导体复合气体源40和诸如PH3 amd AsH2的掺杂气体源44，并且检测单元47布置在掺杂气体流动路径48中，并连接到设置在外部的检测控制器49。供给系统35以这种方式构成，使大约1900埃的波长的紫外线通过电池47，并且通过的紫外线量由控制器49接收并被转换为电信号。之后，将该输出值与参考值进行比较，并且使用伺服单元来控制掺杂气体源44的流量调节装置46。

9. 发明专利

JPS52143761A CRYSTAL GROWTH METHOD 失效
公开(公告)号：JPS52143761A
公开(公告)日：1977-11-30
申请号：JP6001576
申请日：1976-05-26
申请人： HITACHI LTD
发明人： KISHINO SEIGOU , IIDA SHINYA , KOMATSU HIDEO , KOGIRIMA MASAHIKO , MAKI MICHIYOSHI
IPC分类号： C30B19/12 , C30B25/18 , H01L21/20 , H01L21/205
摘要： PURPOSE:To eptaxially grow satisfactory crystal only on the portions encircled by each grating by covering part of substrate crystal in grating form with an insulator, etc.

10. 发明专利

JPS5297378A APPARATUS FOR GAS PHASE GROWTH AT LOW PRESSUR 失效
公开(公告)号：JPS5297378A
公开(公告)日：1977-08-16
申请号：JP1402676
申请日：1976-02-13
申请人： HITACHI LTD
发明人： KOGIRIMA MASAHIKO , SAIDA KOUJI , SHINTANI AKIRA , SUZUKI MICHIO , MAKI MICHIYOSHI
IPC分类号： C30B25/16 , C23C16/455 , H01L21/205
摘要： PURPOSE:To change pressure in a reaction tube arbitrarily without change in total amount of gas in a reaction tube, without change in capacity of a pump, and without change in resistance to gas exhausting by feeding the same gas as that introduced into the reaction tube to a pipe between the outlet of the reaction tube and the pump and by means of controlling the amount of gas flow.

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