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1. 发明专利

JPS58135633A EPITAXIAL GROWTH OF SILICON 失效
公开(公告)号：JPS58135633A
公开(公告)日：1983-08-12
申请号：JP1767482
申请日：1982-02-08
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , KOZUKA KOUJI , SAIDA HIROJI , KOGIRIMA MASAHIKO , KURODA SATOYOSHI
IPC分类号： H01L21/205 , C30B25/10
摘要： PURPOSE:To reduce deposition of silicon to the wall of a reaction tube to the minimum, and to imrpve distribution of film thickness and distribtuion of specific resistance of the deposited film by a method wherein two temperature zones are provided, and epitaxial growth of silicon is performed in the low temperature zone according to unequalizing reaction. CONSTITUTION:The reaction tube 2 is set in an electric resistance furnace 1 having the three zones, and the two temperature zones of the high temperature zone of 1,050 deg.C and the low temperature zone provided with the temperature grade reducing by the ratio 1 deg.C/cm are bestowed to the temperature thereof according to the electric furnace. The numeral 3 shows a jig, silicon wafers are set vertically thereon, and the jig is sent to the prescribed position of the low temperature zone according to a hermetically sealed boat loader 5. SiH2Cl2 is used as silicon source gas, PH3 gas diluted with H2 is used as doping gas, and 100% SiH2Cl2 of 0.5l/min, PH3 of 0.05l/min are supplied to the reaction tube through gas supply piping 6 when epitaxial reaction is to be performed. Moreover, the system is exhausted by a vacuum pump consisting of a Roots pump 8, and a rotary pump 9 through a gas coller 7, and pressure is held at 13Pa.

2. 发明专利

JPS5919316A Method of doping in decompressed hot wall device 失效
标题翻译：降解热壁装置的方法
公开(公告)号：JPS5919316A
公开(公告)日：1984-01-31
申请号：JP12752382
申请日：1982-07-23
申请人： Hitachi Ltd
发明人： TAKAHASHI RIYOUKICHI , KOGIRIMA MASAHIKO
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： PURPOSE:To make uniform the film thickness and the specific resistance of a plurality of substrates by a method wherein doping gas is injected into a reaction tube from the opposite side of the port where a substrate jig will be put in and out. CONSTITUTION:A quartz reaction tube 2 is inserted in a diffusion furnace and a jig 3, whereon a plurality of sets of two substrates are mounted, is set at the inlet of the tube 2. Then, the jig is carried to the high-temperature reaction part in the furnace by a magnetic type automatic loader 5. Reaction gas, as the main stream of gas, is supplied through a flow meter 6 and a piping 7 and, as supplimentary gas, it is supplied through a piping 8 and a nozzle tube 11. Supplementary doping gas PH3 passes through the piping 8, the introduction tube 9 of a quartz nozzle and a manifold 10. At this point, said gas PH3 is branched into four streams, comes out of the nozzle located above the branch tubes, passes through the center of the substrate interval and injected toward the center of the circular substrate.
摘要翻译：目的：通过其中将掺杂气体从基板夹具的入口的相对侧注入到反应管中的方法来使多个基板的膜厚度和电阻率均匀化。构成：在扩散炉中插入石英反应管2，将安装有多组两个基板的夹具3设置在管2的入口处。然后，夹具被运送到高温通过磁式自动装载机5在炉中的反应部分。作为主要气流的反应气体通过流量计6和管道7供应，并且作为供应气体，通过管道8和喷嘴管道11.补充掺杂气体PH3通过管道8，石英喷嘴的引入管9和歧管10.此时，所述气体PH3分支成四个流，从位于分支管上方的喷嘴出来，通过衬底间隔的中心并朝向圆形衬底的中心注入。

3. 发明专利

JPS5888199A JIG FOR DEVICE FOR GROWTH IN GASEOUS PHASE 失效
公开(公告)号：JPS5888199A
公开(公告)日：1983-05-26
申请号：JP18383181
申请日：1981-11-18
申请人： HITACHI LTD
发明人： SAIDA HIROJI , TAKAHASHI RIYOUKICHI , KOGIRIMA MASAHIKO
IPC分类号： C30B25/12 , H01L21/205
摘要： PURPOSE:To prevent the defects and pollution occurring in growth layer in gaseous phase and to treat a large amount of silicone base plate, by supporting plural base plates in such a way that the distance between the facing surfaces of the plates and the distance between the facong backs of the plates are made specific values. CONSTITUTION:The distance d between the facing backs of the silicone base plate 1 having about 4''phi is made 0.5cm, the minimum distance to be treated with tweezers, and the distance D between the surface A and the surface A is made 2.5cm. When the length of the jig 1 is L, 30 silicone base plates 2 can be set on the jig in case of L=60cm, and 40 silicone base plates 2 can be put on the jig in case of L=80cm. When epitaxial growth is carried out by a low-pressure epitaxial device of the diffusion furnace type using the jig 1 with L=80cm, the epitaxial layer 12 with a uniform film thickness can be obtained. When the distance between the facing surfaces of the plates is made =2.5cm.

4. 发明专利

JPS57153426A DECOMPRESSING CVD METHOD 失效
公开(公告)号：JPS57153426A
公开(公告)日：1982-09-22
申请号：JP3797881
申请日：1981-03-18
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , KAWAI TOSHIO , SAIDA HIROJI , MATSUOKA NAOYUKI , TOCHIKUBO HIROO , KANAI AKIRA , KOGIRIMA MASAHIKO
IPC分类号： H01L21/205 , C30B25/14 , H01L21/31
摘要： PURPOSE:To obtain a film excellent at both the accuracy of resistivity and the accuracy of film thickness by also feeding in one part of a source gas from the lower stream side of a substrate when the source gas and a carrier gas are supplied to the substrate heated and the film is formed onto the surface of the substrate. CONSTITUTION:A jig 3 to which a large number of the Si substrates 4 are erected at intervals is disposed into a quartz reaction pipe 2 surrounded by an electric resistance type heating oven 1, and the substrates 4 are heated at approximately 1,000 deg.C. H2 As the carrier gas, SiH2Cl2 as the source gas and PH3 diluted with H2 as a doping gas are forwarded through a flowmeter 5 and an introducing pipe 6 from the upper stream side of the reaction pipe 2, the epitaxial thin-film is grown on the surface of the substrate 4, and residual gases are discharged to the outside by using an exhaust pipe 7, a cooler 8, a root pump 9 and a rotary pump 10. In such constitution, one part of PH3 is branched and ejected from a nozzle 11 adjoined to the substrate 4 at the lower stream side of the reaction pipe 2, and the fall of the concentration of the doping gas in the flow direction is corrected.

5. 发明专利

JPS544066A GROWING METHOD OF SILICON CRYSTAL UNDER LOW PRESSURE 失效
公开(公告)号：JPS544066A
公开(公告)日：1979-01-12
申请号：JP6891877
申请日：1977-06-13
申请人： HITACHI LTD
发明人： KOGIRIMA MASAHIKO , SAIDA HIROJI , TAKAHASHI RIYOUKICHI , KAWAMURA MASAO , MAKI MICHIYOSHI
IPC分类号： C23C16/24 , C30B25/02 , C30B25/12 , C30B29/06 , H01L21/205
摘要： PURPOSE:To grow a lot of silicon thin film on the substrate under a low pressure, by placing the major plane of the substrate orthogonally and in parallel with gas flow, and by surrounding the circumference with silicon of which cross section is approximately a square or with a quartz tube.

6. 发明专利

JPS5875830A REDUCED PRESSURE HOT WALL CVD METHOD 失效
公开(公告)号：JPS5875830A
公开(公告)日：1983-05-07
申请号：JP17298781
申请日：1981-10-30
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , SAIDA HIROJI , KOGIRIMA MASAHIKO
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To form a single crystal epitaxial film of high quality by maintaining the pressure of a reaction tube when a substrate is at a high temperature at the step except the CVD step at 30-600Torr under the flow of H2 gas, thereby preventing the whitening of the surface of the substrate. CONSTITUTION:A quartz reaction tube 3 is set in an electric furnace 1 having three zones, a jig 4 which carries a plurality of substrates 3 is evacuated and maintained at 50Torr, and is annealed with H2 gas flow. Then, a CVD is performed with the H2 gas and source gas flow. Subsequently, the source gas is stopped, and after the CVD is finished, the substrates 3 are conveyed from the high temperature section of the tube 2 with the H2 gas flow and are cooled.

7. 发明专利

JPS57175797A EPITAXIAL GROWTH UNDER REDUCED PRESSURE 失效
公开(公告)号：JPS57175797A
公开(公告)日：1982-10-28
申请号：JP5985481
申请日：1981-04-22
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , MATSUDA MASATOSHI , KOGIRIMA MASAHIKO , TOCHIKUBO HIROO , KANAI AKIRA
IPC分类号： C30B25/14 , C01B33/02 , H01L21/02 , H01L21/205
摘要： PURPOSE:The source gas is fed from the nozzle jutting out from the upper part of the reactor tube to effect the growth of a film, then hydrogen chloride is fed into the tube, after the reaction, to prevent the contamination in the tube and deterioration of the tube material. CONSTITUTION:The jig 3 carrying the silicon base plate 4 is inserted into the reactor tube 2 set in the furnace and the tube is heated up to about 1,000 deg.C. The reaction gases, SiH2Cl2 and H2 are fed through the nozzle 5 into the reactor tube 2 and the jetting end of the nozzle 5 is kept at over 800 deg.C. Meanwhile the carrier gas, H2, and the doping gas, PH2, are fed from the branch of the end of the reactor tube 2. Thus, an epitaxial film is formed on the surface of the silicon base plate 4. After reaction, the gases are excluded and the jig is taken out. The inside of the reactor tube is made vacuum and hydrogen chloride is directly fed into the tube 2 to keep the pressure at about 5 Torr for about 10min, whereby the wall of the reactor tube is almost cleaned to become clear.

8. 发明专利

JPS52143903A ZONE REFINING 失效
公开(公告)号：JPS52143903A
公开(公告)日：1977-11-30
申请号：JP6001176
申请日：1976-05-26
申请人： HITACHI LTD
发明人： TAKAHASHI RIYOUKICHI , MINAGAWA SHIGEKAZU
IPC分类号： C30B13/00 , C30B29/12
摘要： PURPOSE:To conduct high purity refining with preventing an ampoule break by interrupting the light to the tamp. range above 50 deg.C of furnace core tube in zone refining apparatus for the material which tends to photolysis such as PbI2 and displays high vapor pressure due to formed I2.

9. 发明专利

JPS51126040A FABRICATION METHOD OF G* CRYSTAL 失效
公开(公告)号：JPS51126040A
公开(公告)日：1976-11-02
申请号：JP10783174
申请日：1974-09-20
申请人： HITACHI LTD
发明人： SHINTANI AKIRA , TAKAHASHI RIYOUKICHI , MINAGAWA SHIGEKAZU
IPC分类号： C23C16/34 , C30B25/18 , C30B29/38 , H01L21/205 , H01L21/86 , H01L33/16 , H01L33/32
摘要： PURPOSE:Fabrication method of GaN crystal that obtains green illumination of a fixed tone, and moreover, reproduces well.

10. 发明专利

JPS59217325A Vacuum hot-wall cvd method 失效
标题翻译：真空高温CVD方法
公开(公告)号：JPS59217325A
公开(公告)日：1984-12-07
申请号：JP9068883
申请日：1983-05-25
申请人： Hitachi Ltd
发明人： TAKAHASHI RIYOUKICHI , KOGIRIMA MASAHIKO
IPC分类号： H01L21/205
CPC分类号： H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： PURPOSE:To keep substantially constant the amount of gas jetting out of each of nozzle holes and make it feasible to provide a uniform resistivity for a multiplicity of substrates inside the reaction tube by a method wherein a drop in pressure of gas jetting from a doping gas nozzle is made greater and the pressure within a nozzle tube is heightened. CONSTITUTION:A reaction tube 2 is inserted into a general-purpose electric furnace 1 so as to be heated. The reaction is effected inside the reaction tube 2 such that a multiplicity of substrates 4 are vertically disposed on a jig 3. Among reaction gases, SiH2Cl2 as a source gas is introduced into the tube 2 from the main tube inlet thereof through a piping 5. While, a doping gas in accompany with an H2 carrier gas and Ar gas pass through a piping 6 are jetted to every spacing formed between the substrates from the nozzle hole of a doping nozzle 8 which is inserted into the reaction tube 2 from its rear portion. The reaction is carried out under a vacuum of approximately 1 Torr and a growth rate of 0.4mum/min is gained. The gas after the completion of reaction is discharged outside through a gas cooling tube 9 and filter 11 by means of a booster pump 12 and rotary pump 13. On the other hand, the reaction system is measured by a pressure gage 10. With this process, an epitaxial reaction of fifty substrates is performed. In this case, the degree of precision concerning the film thickness shows + or -4% and resisttivity + or -6%.
摘要翻译：目的：为了保持从每个喷嘴孔喷出的气体的量基本恒定，并且使得可以通过一种方法为反应管内的多个基板提供均匀的电阻率，其中从掺杂气体喷射的气体的压力降低喷嘴更大，喷嘴管内的压力提高。构成：将反应管2插入通用电炉1中以加热。反应在反应管2内部进行，使得多个基板4垂直设置在夹具3上。在反应气体中，作为源气体的SiH 2 Cl 2通过管道5从主管入口引入到管2中。同时，伴随着H 2载气和Ar气体的掺杂气体通过管道6被喷射到从其后部分插入到反应管2中的掺杂喷嘴8的喷嘴孔之间形成的每个间隔上。反应在约1托的真空下进行，并且获得0.4mum / min的生长速率。反应结束后的气体通过增压泵12和旋转泵13通过气体冷却管9和过滤器11排出到外部。另一方面，通过压力计10测量反应系统。利用该方法进行50个基板的外延反应。在这种情况下，关于膜厚度的精度为+或-4％，电阻率为+或-6％。

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