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1. 发明专利

JP2013084898A Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底加工设备的制造方法
公开(公告)号：JP2013084898A
公开(公告)日：2013-05-09
申请号：JP2012128763
申请日：2012-06-06
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKESHIMA YUICHIRO , KASAHARA OSAMU , TOYODA KAZUYUKI , TANABE JUNICHI , YAMAMOTO KATSUHIKO , NOMURA HISASHI
IPC分类号： H01L21/316 , C23C16/46 , H01L21/31
CPC分类号： C23C16/54 , C23C16/4408 , C23C16/463 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/67109 , H01L21/67754 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To prevent undesired reaction from occurring in a thin film after substrate processing due to waste heat, stabilize a crystal structure of the thin film, and reduce the damage of a transfer robot and the likes.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: placing a substrate on a substrate support part provided at a reaction vessel having multiple processing regions; supplying a first gas and a second gas in a plasma state to the first processing region and the second processing region respectively while heating the substrate to a predetermined temperature and causing the substrate to pass through the first processing region and the second processing region to form a thin film; stopping the supply of the first gas and the second gas to the reaction vessel and supplying an inactive gas to the reaction vessel to cool the substrate that has been processed; and carrying out the substrate that has been processed to the exterior of the reaction vessel.
摘要翻译：要解决的问题：为了防止由于废热引起的基板处理之后在薄膜中发生不希望的反应，使薄膜的晶体结构稳定，并且减少传送机器人的损坏等。解决方案：半导体器件的制造方法包括以下步骤：将衬底放置在设置在具有多个处理区域的反应容器上的衬底支撑部分上; 将等离子体状态的第一气体和第二气体分别供给到第一处理区域和第二处理区域，同时将衬底加热到预定温度，并使衬底通过第一处理区域和第二处理区域，以形成薄膜; 停止向反应容器供应第一气体和第二气体，并向反应容器供应惰性气体，以冷却已加工的基材; 并且将经处理的基板进行到反应容器的外部。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013055240A Manufacturing method of semiconductor device, and substrate processing device 审中-公开
标题翻译：半导体器件的制造方法和衬底处理器件
公开(公告)号：JP2013055240A
公开(公告)日：2013-03-21
申请号：JP2011192888
申请日：2011-09-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , KASAHARA OSAMU , NOMURA HISASHI , YAMAMOTO KATSUHIKO , TAKESHIMA YUICHIRO
IPC分类号： H01L21/316 , C23C16/42 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To fill an element isolation groove formed in a substrate with a silicon insulating film while suppressing occurrence of cavities even if the element isolation groove has a high aspect ratio.SOLUTION: A manufacturing method of a semiconductor device includes: a substrate carrying-in step for carrying a substrate, in which an element isolation groove of high aspect ratio is formed, in a processing chamber; a silicon-containing gas atmosphere step for bringing the processing chamber into an atmosphere containing a first gas, i.e., a hexamethyldisilazane (HMDS); a first purge gas atmosphere step for bringing the processing chamber into an atmosphere of a second gas, i.e., a purge gas; an oxygen-containing gas atmosphere step for bringing the processing chamber into an atmosphere containing a third gas, i.e., oxygen gas in a plasma state; a second purge gas atmosphere step for bringing the processing chamber into an atmosphere of the second gas, i.e., the purge gas; and a step for repeating the silicon-containing gas atmosphere step, the first purge gas atmosphere step, the oxygen-containing gas atmosphere step, and the second purge gas atmosphere step. A substrate processing device which materializes the manufacturing method of a semiconductor device is also provided.
摘要翻译：要解决的问题：即使元件隔离槽具有高纵横比，也可以通过硅绝缘膜填充形成在衬底中的元件隔离槽，同时抑制腔的发生。解决方案：一种半导体器件的制造方法包括：在处理室中承载其中形成有高纵横比的元件隔离槽的衬底的衬底承载步骤; 用于使处理室进入含有第一气体即六甲基二硅氮烷（HMDS）的气氛的含硅气体气氛步骤; 第一吹扫气体气氛步骤，用于使处理室进入第二气体即净化气体的气氛中; 含氧气体气氛步骤，用于使处理室进入含有第三气体的气氛，即处于等离子体状态的氧气; 第二吹扫气体气氛步骤，用于使处理室进入第二气体即净化气体的气氛; 以及重复含硅气体气氛步骤，第一吹扫气体气氛步骤，含氧气体气氛步骤和第二吹扫气体气氛步骤。还提供了实现半导体器件的制造方法的衬底处理装置。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012084602A Semiconductor device manufacturing method and substrate processing device system 审中-公开
标题翻译：半导体器件制造方法和衬底处理器件系统
公开(公告)号：JP2012084602A
公开(公告)日：2012-04-26
申请号：JP2010227649
申请日：2010-10-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO KATSUHIKO , TAKEBAYASHI YUJI , SAITO TATSUYUKI
IPC分类号： H01L21/316 , C23C16/56 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a substrate processing device system which can decrease defects in an insulator film.SOLUTION: A wafer where a TiN film as a metal film and a ZrOfilm as an insulator film are formed is carried into a processing chamber. Into the processing chamber, Ois supplied as modifier gas modifying the ZrOfilm. The wafer is irradiated with electromagnetic waves to excite dipoles contained in the ZrOfilm to modify the ZrOfilm. Then, the wafer is carried out of the processing chamber.
摘要翻译：要解决的问题：提供可以减少绝缘膜的缺陷的半导体器件制造方法和衬底处理器件系统。解决方案：形成作为金属膜的TiN膜和作为绝缘膜的ZrO 2 膜的晶片被载入处理室。作为调整气体，修改ZrO 2 膜，将O 2 作为改性气体供入处理室。用电磁波照射晶片以激发包含在ZrO 2 膜中的偶极子，以修饰ZrO 2 膜。然后，晶片从处理室中进行。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2010153789A Non-volatile semiconductor memory device and method of fabricating the same 有权
标题翻译：非挥发性半导体存储器件及其制造方法
公开(公告)号：JP2010153789A
公开(公告)日：2010-07-08
申请号：JP2009230759
申请日：2009-10-02
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO KATSUHIKO , TERASAKI TADASHI , YONAMOTO YOSHIKI , HAMAMURA HIROTAKA
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28282 , H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28273 , H01L21/3115 , H01L21/3144 , H01L29/513 , H01L29/518 , H01L29/7885
摘要： PROBLEM TO BE SOLVED: To provide a technology for improving memory holding characteristic of a non-volatile memory, especially a technology for manufacturing a non-volatile semiconductor memory device capable of improving memory holding characteristic of the non-volatile memory, by improving film quality of a silicon oxide, film even when the silicon oxide film which is to be the first potential barrier film is formed by a plasma film-forming method. SOLUTION: A silicon oxide film OX1 which is the main component of the first potential barrier film EV1 is formed by a plasma film-forming method. Then a hot plasma nitriding processing is coupled with a heating process in the atmosphere containing nitrogen monoxide so as to form an acid silicon nitride film SOX on the surface of the silicon oxide film OX1, with nitrogen N2 segregated on the interface between the silicon oxide film OX1 and a semiconductor substrate 1S. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于改善非易失性存储器的存储器保持特性的技术，特别是用于制造能够改善非易失性存储器的存储器保持特性的非易失性半导体存储器件的技术，通过即使通过等离子体成膜法形成作为第一势垒膜的氧化硅膜，也能提高氧化硅膜的膜质量。解决方案：作为第一势垒膜EV1的主要成分的氧化硅膜OX1通过等离子体成膜法形成。然后将热等离子体氮化处理与含有一氧化氮的气氛中的加热过程相结合，以在氧化硅膜OX1的表面上形成酸性氮化硅膜SOX，氮气N2分隔在氧化硅膜 OX1和半导体衬底1S。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010073860A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2010073860A
公开(公告)日：2010-04-02
申请号：JP2008239077
申请日：2008-09-18
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO KATSUHIKO
IPC分类号： H01L21/677 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To keep a growth rate of a film of silicon constant even when substrates thrown into a reactor are changed. SOLUTION: A substrate processing apparatus includes a processing chamber for processing substrates, a substrate holding section stored in the processing chamber and configured to hold a plurality of substrates, a transfer device for transferring substrates to the substrate holding section, and a control section for controlling the transfer device. The control section inputs the production number of first substrates each having an insulator and silicon exposed on a surface and also inputs the ratio of exposure area of silicon to the entire area of a surface of the first substrate to calculate the number of second substrates each having silicon exposed on the entire surface from the input production number and the rate of exposure area of silicon, and makes the transfer device transfer the input production number of first substrates to the substrate holding section and also transfer the calculated number of second substrates to the substrate holding section. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使改变投入反应器的基板，也能保持硅膜的生长速度恒定。解决方案：基板处理装置包括处理基板的处理室，存储在处理室中并被构造成保持多个基板的基板保持部，用于将基板传送到基板保持部的转印装置，以及控制用于控制传送装置的部分。控制部分输入在表面上具有绝缘体和硅的第一基板的生产数量，并且还将硅的曝光面积的比率输入到第一基板的表面的整个区域以计算每个具有硅从输入生产数量和硅的曝光面积的比例暴露在整个表面上，并且使转印装置将第一基板的输入生产数量转移到基板保持部分，并将计算出的第二基板的数量传送到基板持有部分。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008235865A Substrate processing apparatus and method 审中-公开
标题翻译：基板加工装置和方法
公开(公告)号：JP2008235865A
公开(公告)日：2008-10-02
申请号：JP2007332608
申请日：2007-12-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： INOKUCHI YASUHIRO , YAMAMOTO KATSUHIKO , MORIYA ATSUSHI
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , H01L21/22 , H01L21/31 , H01L21/324
CPC分类号： C23C16/54 , C23C16/45578 , C23C16/4584 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and method, which reduce a difference in a processing characteristic in a stacking direction or a difference in a processing characteristic within a substrate surface in a batch type vertical hot wall pressure reducing CVD apparatus.
SOLUTION: A substrate processing method, in which a processing gas is supplied into a processing chamber 32 to process a surface of each substrate, includes: a gas supply step of supplying the processing gas into the processing chamber from at least two different locations; a vertical movement step of moving a substrate mounting portion in a substrate stacking direction in the processing chamber; and a parallel movement step of moving the substrate mounting portion in a direction parallel to substrate surfaces.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题的方案：提供一种基板处理装置和方法，其能够减少间歇式立式热壁减压CVD中的层叠方向的加工特性的差异或基板表面内的加工特性的差异仪器。解决方案：一种基板处理方法，其中处理气体被供应到处理室32中以处理每个基板的表面，包括：气体供应步骤，从至少两种不同的方式将处理气体供应到处理室中位置; 垂直移动步骤，使处理室中的基板堆叠方向移动基板安装部; 以及在平行于基板表面的方向上移动所述基板安装部的平行移动步骤。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008171958A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008171958A
公开(公告)日：2008-07-24
申请号：JP2007002789
申请日：2007-01-10
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： O KETSU , YAMAMOTO KATSUHIKO , OGAWA YASUHIRO
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which enables heavy doping of P, does not have crystal defects, requires short processing time, and improves the throughput.
SOLUTION: In the method of manufacturing the semiconductor device, a substrate 3 having a silicon surface on the surface is stored in a treatment chamber 17 and the ambient temperature inside the treatment chamber and the substrate are heated up to a predetermined temperature and an epitaxial film is formed on the silicon surface. This manufacturing method includes a process of carrying the substrate into the treatment chamber, a process of heating up the substrate and the ambient temperature inside the treatment chamber to the predetermined temperature between 400°C and 600°C; and a gas supplying process of supplying a desired gas into the treatment chamber. In the gas supplying process, Si2 H6 or Si3 H8, and PH3 which are dopant gases are supplied into the treatment chamber, to form the epitaxial film doped with phosphorus at the concentration of 1E20 or above on the silicon plane.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种制造能够重掺杂P的半导体器件的方法，不具有晶体缺陷，需要较短的处理时间，并且提高了生产量。解决方案：在制造半导体器件的方法中，将表面上具有硅表面的衬底3存储在处理室17中，将处理室内的环境温度和衬底加热至预定温度，在硅表面上形成外延膜。该制造方法包括将基板搬入处理室的过程，将处理室内的基板加热和环境温度升温至400℃〜600℃的规定温度的工序; 以及将期望的气体供给到处理室中的气体供给工序。在气体供给过程中，作为掺杂气体的Si 2 H 6或Si 3 H 8和PH 3被供给到处理室中，以在硅平面上形成掺杂浓度为1E20或更高的磷的外延膜。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2012169668A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2012169668A
公开(公告)日：2012-09-06
申请号：JP2012113532
申请日：2012-05-17
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO KATSUHIKO
IPC分类号： H01L21/205 , C23C16/04 , C23C16/24 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which generates a high quality generation film at low temperature and improves device performance and yield.SOLUTION: A manufacturing method of a semiconductor device includes: a process where a substrate is transported into a processing chamber; a process where the processing chamber and the substrate are heated to a predetermined temperature; and a gas supply/discharge process where a predetermined gas is supplied to or discharged from the processing chamber. The gas supply/discharge process includes: a first supply process where silane gas and hydrogen gas are supplied to the processing chamber; a first removal process where at least silane gas is removed from the processing chamber; a second supply process where chlorine gas and hydrogen gas are supplied to the processing chamber; and a second removal process where at least the chlorine gas is removed from the processing chamber. These processes are repeated for a predetermined number of times in the gas supply/discharge process.
摘要翻译：要解决的问题：提供一种在低温下产生高质量生成膜的半导体器件的制造方法，并提高器件性能和产率。解决方案：半导体器件的制造方法包括：将衬底输送到处理室中的工序; 处理室和基板被加热到预定温度的过程; 以及向处理室供给或排出预定气体的气体供给/排出处理。气体供给/排出处理包括：向处理室供给硅烷气体和氢气的第一供给工序; 第一除去工艺，其中至少硅烷气体从处理室中除去; 向处理室供给氯气和氢气的第二供给工序; 以及至少从处理室除去氯气的第二除去过程。这些处理在气体供给/排出处理中重复预定次数。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2008277777A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2008277777A
公开(公告)日：2008-11-13
申请号：JP2008075763
申请日：2008-03-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAMOTO KATSUHIKO
IPC分类号： H01L21/205 , C23C16/04 , C23C16/24 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that achieves improvement in both yield and device performance while allowing generation of a high-quality generated film at a low temperature.
SOLUTION: The semiconductor device manufacturing method includes a step for carrying substrates into a processing chamber, a step for heating the processing chamber and the substrates to a prescribed temperature, and a gas supply/discharge step for supplying/discharging prescribed gas to/from the processing chamber. The gas supply/discharge step is configured to repeatedly execute the following steps a prescribed number of times, that is, a first supply step for supplying silane gas and hydrogen gas to the processing chamber, a first removal step for removing at least the silane gas from the processing chamber, a second supply step for supplying chlorine gas and hydrogen gas to the processing chamber, and a second removal step for removing at least the chlorine gas from the processing chamber.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在产量和设备性能方面提高的半导体器件制造方法，同时允许在低温下产生高质量的生成膜。解决方案：半导体器件制造方法包括将衬底输送到处理室中的步骤，将处理室和衬底加热到规定温度的步骤以及用于将规定气体供给/排出的气体供给/排出步骤 /从处理室。气体供给/排出工序被配置为反复进行规定次数的以下步骤，即，向处理室供给硅烷气体和氢气的第一供给工序，至少除去硅烷气体的第一除去工序来自处理室的用于向处理室供应氯气和氢气的第二供给步骤和用于从处理室中至少去除氯气的第二除去步骤。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008270764A Substrate processing device and method for manufacturing semiconductor in the substrate processing device 审中-公开
标题翻译：基板处理装置及其在基板处理装置中制造半导体的方法
公开(公告)号：JP2008270764A
公开(公告)日：2008-11-06
申请号：JP2008065596
申请日：2008-03-14
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGAWA UNRYU , YAMAMOTO KATSUHIKO , NAKAYAMA MASANORI
IPC分类号： H01L21/31 , H01L21/318
CPC分类号： H01L21/67115 , H01J37/32091 , H01J37/32724 , H01J2237/2001 , H01L21/3115 , H01L21/3144
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device for manufacturing a semiconductor, having satisfactory electrical characteristics and a method for manufacturing a semiconductor by the substrate processing device in a nitriding process of a gate insulating film, and to provide a substrate processing device and a method for manufacturing the semiconductor, by the substrate processing device having a satisfactory production efficiency.
SOLUTION: The substrate processing device has a processing chamber 201 for processing a substrate 200; a plasma-generating unit for generating the plasma; a heating unit for heating the substrate; a gas supply unit; and a control unit for making a nitrogen-containing gas, supplied in the first step into a plasma state by the plasma-generating unit, for heating the substrate 200 by the heating unit, stopping the plasma generation in the second step, and heating the substrate at a temperature which is not lower than 450°C. A method for manufacturing the semiconductor in the substrate processing device is provided.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造具有令人满意的电特性的半导体的基板处理装置和通过基板处理装置在栅极绝缘膜的氮化处理中制造半导体的方法，并且提供基板处理装置和半导体制造方法，由具有令人满意的生产效率的基板处理装置。解决方案：基板处理装置具有用于处理基板200的处理室201; 用于产生等离子体的等离子体产生单元; 用于加热衬底的加热单元; 气体供应单元; 以及控制单元，用于通过等离子体产生单元将第一步骤中供给的含氮气体制成等离子体状态，用于通过加热单元加热基板200，停止第二步骤中的等离子体产生，并加热基材在不低于450℃的温度下进行。提供了一种在基板处理装置中制造半导体的方法。版权所有（C）2009，JPO＆INPIT

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