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1. 发明专利

JP2012204692A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2012204692A
公开(公告)日：2012-10-22
申请号：JP2011068933
申请日：2011-03-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ASHIHARA YOJI , KITAGAWA NAOKO , TAIRA YUKI , TANABE JUNICHI
IPC分类号： H01L21/316 , C23C16/42 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an optical thin film formation technology which can inhibit large volume shrinkage due to desorption of an organic component in a film and inhibit structural disorder such as cracks.SOLUTION: A semiconductor device manufacturing method comprises a step of conveying a substrate into a processing chamber, a step of supplying an organic silicon-based gas to the processing chamber and irradiating the organic silicon-based gas with ultraviolet light to form a silicon oxide film, and a step of supplying an inorganic silicon-based gas to the processing chamber and irradiating the inorganic silicon-based gas with ultraviolet light to form a silicon oxide film.
摘要翻译：解决的问题：提供一种光学薄膜形成技术，其可以抑制由于膜中的有机组分的解吸引起的大的体积收缩并抑制诸如裂纹的结构紊乱。解决方案：半导体器件制造方法包括将衬底输送到处理室中的步骤，向处理室供应有机硅基气体并用紫外线照射有机硅基气体的步骤以形成氧化硅膜，以及向处理室供给无机硅系气体，用紫外线照射无机硅系气体，形成氧化硅膜的工序。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2009260015A Method of manufacturing substrate, and substrate processing apparatus 审中-公开
标题翻译：制造基板的方法和基板处理装置
公开(公告)号：JP2009260015A
公开(公告)日：2009-11-05
申请号：JP2008106857
申请日：2008-04-16
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TANABE JUNICHI
IPC分类号： H01L21/205 , C23C16/04
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a substrate capable of growing a sufficiently thick epitaxial film while keeping selectivity and film thickness uniformity in a substrate surface; and a substrate processing apparatus. SOLUTION: This method of manufacturing a substrate includes: a process of loading a substrate into a processing chamber, wherein the substrate has at least a silicon exposure surface and an exposure surface of silicon oxide film or silicon nitride film on a surface thereof; a heating process of heating the substrate in the processing chamber to a predetermined temperature; a first gas supply process of simultaneously supplying a first processing gas containing at least silicon and a second processing gas for an etching system into the processing chamber; and a second gas supply process of supplying a third processing gas for an etching system having a stronger etching effect than the second process gas into the process chamber. In the method, the first gas supply process and the second gas supply process are repeatedly performed a predetermined number of times so that an epitaxial film is selectively grown on the silicon exposure surface of the substrate surface. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造能够生长足够厚的外延膜的衬底的方法，同时保持衬底表面中的选择性和膜厚均匀性; 以及基板处理装置。解决方案：这种制造衬底的方法包括：将衬底加载到处理室中的工艺，其中衬底至少具有硅暴露表面和其表面上的氧化硅膜或氮化硅膜的暴露表面 ; 将处理室中的基板加热到预定温度的加热过程; 将至少含有硅的第一处理气体和用于蚀刻系统的第二处理气体同时供给到处理室中的第一气体供给工序; 以及将具有比第二处理气体更强的蚀刻效果的蚀刻系统的第三处理气体供给到处理室的第二气体供给处理。在该方法中，第一气体供给处理和第二气体供给处理重复进行预定次数，使得在基板表面的硅暴露表面上选择性地生长外延膜。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009224765A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2009224765A
公开(公告)日：2009-10-01
申请号：JP2009010273
申请日：2009-01-20
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TANABE JUNICHI , O KETSU
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C23C16/45572 , C23C16/45578 , C30B25/14 , C30B29/06 , C30B29/08
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can prevent leakage of process gas from a gas supply nozzle connection part for introducing the process gas to a process chamber to an external, can prevent breakage in mounting a gas supply nozzle, and can easily mount the gas supply nozzle.
SOLUTION: The substrate processing apparatus includes: the process chamber 61 for accommodating stacked substrates 4; a heating means 58 for heating an inside of the process chamber to a predetermined temperature; a gas supply means for supplying predetermined process gas to the process chamber; and exhaust means 62, 63, 64 for exhausting the inside of the process chamber. The gas supply means includes: the gas supply nozzle 66 having a straight pipe shape and vertically arranged in a stacked direction of the substrates; a metal pipe 65 supporting the gas supply nozzle; and a manifold 2 forming a lower part of the process chamber. The metal pipe has: a first part extending from an outside of the process chamber to the inside of the processes chamber through the manifold; and a second part connected to the first part and extending in the stacked direction. The gas supply nozzle is fitted to and supported by the second part.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够防止来自用于将处理气体引导到处理室的气体供给喷嘴连接部分的处理气体泄漏到外部的基板处理装置，可以防止在安装气体供给喷嘴时的破损，并且可以容易地安装气体供应喷嘴。解决方案：基板处理装置包括：处理室61，用于容纳堆叠的基板4; 用于将处理室内部加热到预定温度的加热装置58; 用于向处理室供给预定处理气体的气体供给装置; 以及用于排出处理室内部的排气装置62,63,64。气体供给装置包括：气体供给喷嘴66，其具有直管形状，并且在基板的堆叠方向上垂直设置; 支撑气体供给喷嘴的金属管65; 以及形成处理室的下部的歧管2。金属管具有：通过歧管从处理室的外部延伸到处理室的内部的第一部分; 以及第二部分，其连接到第一部分并且在堆叠方向上延伸。气体供给喷嘴装配到第二部分并由其支撑。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2014082463A Substrate processing device, lid and semiconductor device manufacturing method 审中-公开
标题翻译：基板加工装置，盖和半导体装置的制造方法
公开(公告)号：JP2014082463A
公开(公告)日：2014-05-08
申请号：JP2013170571
申请日：2013-08-20
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , KASAHARA OSAMU , INADA TETSUAKI , TANABE JUNICHI , UEDA TATESHI
IPC分类号： H01L21/31 , C23C16/455 , C23C16/458
CPC分类号： C23C16/44 , C23C16/402 , C23C16/45523 , C23C16/45565 , C23C16/50 , C23C16/54 , H01L21/02164 , H01L21/02219 , H01L21/02263 , H01L21/02274 , H01L21/0228
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device having a plurality of processing regions and capable of responding to difference in processing time for each of the processing regions.SOLUTION: A substrate processing device comprises: a substrate mounting part which is arranged in a processing chamber and on which a plurality of substrates can be circumferentially mounted; a rotation mechanism for rotating the substrate mounting part at a predetermined angular speed; split structures arranged from the center of a lid of the processing chamber in a radial fashion for splitting the processing chamber into multiple regions; and gas supply regions each arranged between adjacent split structures. An angle formed by the split structures across one gas supply region is set at an angle corresponding to time that a part of the substrate loading part passes through the gas supply region and the angular speed.
摘要翻译：要解决的问题：提供具有多个处理区域并且能够响应每个处理区域的处理时间差异的基板处理装置。解决方案：基板处理装置包括：基板安装部，其布置在处理室，并且其上可以周向地安装多个基板; 旋转机构，用于以预定角速度旋转所述基板安装部; 分割结构以处理室的盖的中心以径向方式布置，用于将处理室分成多个区域; 以及各自配置在相邻的分割结构之间的气体供给区域。通过一个气体供应区域上的分离结构形成的角度被设定为与衬底装载部分的一部分通过气体供应区域和角速度的时间相对应的角度。

5. 发明专利

JP2013084898A Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底加工设备的制造方法
公开(公告)号：JP2013084898A
公开(公告)日：2013-05-09
申请号：JP2012128763
申请日：2012-06-06
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKESHIMA YUICHIRO , KASAHARA OSAMU , TOYODA KAZUYUKI , TANABE JUNICHI , YAMAMOTO KATSUHIKO , NOMURA HISASHI
IPC分类号： H01L21/316 , C23C16/46 , H01L21/31
CPC分类号： C23C16/54 , C23C16/4408 , C23C16/463 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/67109 , H01L21/67754 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To prevent undesired reaction from occurring in a thin film after substrate processing due to waste heat, stabilize a crystal structure of the thin film, and reduce the damage of a transfer robot and the likes.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: placing a substrate on a substrate support part provided at a reaction vessel having multiple processing regions; supplying a first gas and a second gas in a plasma state to the first processing region and the second processing region respectively while heating the substrate to a predetermined temperature and causing the substrate to pass through the first processing region and the second processing region to form a thin film; stopping the supply of the first gas and the second gas to the reaction vessel and supplying an inactive gas to the reaction vessel to cool the substrate that has been processed; and carrying out the substrate that has been processed to the exterior of the reaction vessel.
摘要翻译：要解决的问题：为了防止由于废热引起的基板处理之后在薄膜中发生不希望的反应，使薄膜的晶体结构稳定，并且减少传送机器人的损坏等。解决方案：半导体器件的制造方法包括以下步骤：将衬底放置在设置在具有多个处理区域的反应容器上的衬底支撑部分上; 将等离子体状态的第一气体和第二气体分别供给到第一处理区域和第二处理区域，同时将衬底加热到预定温度，并使衬底通过第一处理区域和第二处理区域，以形成薄膜; 停止向反应容器供应第一气体和第二气体，并向反应容器供应惰性气体，以冷却已加工的基材; 并且将经处理的基板进行到反应容器的外部。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013055141A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2013055141A
公开(公告)日：2013-03-21
申请号：JP2011190927
申请日：2011-09-01
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ASHIHARA YOJI , SHINOZAKI KENJI , INADA TETSUAKI , TAIRA YUKI , TANABE JUNICHI
IPC分类号： H01L21/26 , H01L21/31 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a technology capable of processing a large-sized processing substrate for a substrate processing apparatus that processes a substrate by using light.SOLUTION: A substrate processing apparatus comprises: a processing chamber for processing a substrate: a substrate loading part provided in the processing chamber and horizontally rotating in a state of loading a substrate; a light generation part provided outside the processing chamber so as to face the substrate loaded on the substrate loading part for radiating light into the processing chamber; a partition part provided between the processing chamber and the light generation part for separating the processing chamber and the light generation part; a processing gas supply part supplying a processing gas into the processing chamber; and an exhaust part exhausting an atmosphere in the processing chamber. The partition part includes a plurality of transmission windows transmitting light irradiated from the light generation part into the processing chamber and window fixing parts provided between the transmission windows for fixing the transmission windows. An area of at least one transmission window among the plurality of transmission windows is set at an area smaller than a substrate area.
摘要翻译：要解决的问题：提供一种能够处理通过使用光处理衬底的衬底处理装置的大尺寸处理衬底的技术。解决方案：一种基板处理装置，包括：处理基板的处理室：设置在处理室中并在加载基板的状态下水平旋转的基板装载部; 光生成部，其设置在所述处理室的外侧，以面对载置在所述基板负载部上的所述基板，用于将光照射到所述处理室中; 分隔部，设置在所述处理室和所述光生成部之间，用于分离所述处理室和所述光产生部; 处理气体供给部，其将处理气体供给到所述处理室中; 以及排出处理室中的气氛的排气部。分隔部包括将从光生成部照射的光传送到处理室的多个透射窗，以及设置在用于固定透射窗的透射窗之间的窗固定部。多个传输窗口中的至少一个传输窗口的区域被设置在比衬底区域小的区域。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012204694A Manufacturing method of semiconductor device and substrate processing device 审中-公开
标题翻译：半导体器件和衬底加工器件的制造方法
公开(公告)号：JP2012204694A
公开(公告)日：2012-10-22
申请号：JP2011068938
申请日：2011-03-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKESHIMA YUICHIRO , ASHIHARA YOJI , TAIRA YUKI , TANABE MITSUAKI , TANABE JUNICHI
IPC分类号： H01L21/316 , C23C16/48 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of forming a precise silicon oxide film with high electric insulation on a substrate using an optical CVD method.SOLUTION: A manufacturing method of a semiconductor device comprises: a step of carrying a substrate into a processing chamber; a deposition step of supplying a linear inorganic silicon gas and an oxygen-containing gas into the processing chamber and then supplying an excitation energy into the processing chamber with the linear inorganic silicon gas and the oxygen-containing gas being supplied; a reforming step of stopping supply of the linear inorganic silicon gas and supplying the excitation energy into the processing chamber with the oxygen-containing gas being supplied into the processing chamber; a step of exhausting an atmosphere in the processing chamber; and a step of carrying the substrate out of the processing chamber.
摘要翻译：解决的问题：提供能够使用光CVD法在衬底上形成具有高电绝缘性的精确氧化硅膜的半导体器件的制造方法。解决方案：半导体器件的制造方法包括：将衬底运送到处理室中的步骤; 将线性无机硅气体和含氧气体供给到所述处理室中，然后将所述线性无机硅气体和所述含氧气体供给到所述处理室内的激发能量的沉积步骤; 重整步骤，停止所述线性无机硅气体的供给并将所述激发能量供给到所述处理室中，所述含氧气体被供给到所述处理室中; 排出处理室中的气氛的步骤; 以及将基板搬出处理室的步骤。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2014060309A Substrate processing apparatus and semiconductor device manufacturing method 审中-公开
标题翻译：基板加工设备和半导体器件制造方法
公开(公告)号：JP2014060309A
公开(公告)日：2014-04-03
申请号：JP2012205223
申请日：2012-09-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TANABE JUNICHI
IPC分类号： H01L21/31 , C23C16/455 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To inhibit a quantity of a process gas supplied to a substrate from being non uniform.SOLUTION: A substrate processing apparatus comprises: a processing chamber for processing a substrate; a substrate placement table which is provided in the processing chamber and has a placement surface for placing the substrate opposite to a ceiling of the processing chamber; a gas supply part for supplying a gas into the processing chamber; an exhaustion part for exhausting the gas supplied from the processing chamber; and a rectification part which is provided on the ceiling of the processing chamber for rectifying the gas supplied from the gas supply part so as to flow toward the substrate placement table.
摘要翻译：要解决的问题：抑制供给基板的处理气体的量不均匀。解决方案：基板处理装置包括：处理基板的处理室; 衬底放置台，其设置在所述处理室中并具有用于将所述衬底放置在与所述处理室的天花板相对的位置的放置表面; 用于将气体供给到所述处理室中的气体供给部; 用于排出从处理室供应的气体的耗尽部分; 以及整流部，其设置在处理室的天花板上，用于对从气体供给部供给的气体进行整流，以朝向基板配置台流动。

9. 发明专利

JP2011054680A Method and device for manufacturing semiconductor device 审中-公开
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：JP2011054680A
公开(公告)日：2011-03-17
申请号：JP2009200667
申请日：2009-08-31
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： WADA YUICHI , ASHIHARA YOJI , HIYAMA MAKOTO , TANABE JUNICHI , TAIRA YUKI , KITAGAWA NAOKO , ONO MASANORI
IPC分类号： H01L21/316 , C23C16/455 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To remove impurities, to reform a film further, and to stabilize the film when depositing the film by a CVD method or the like.
SOLUTION: In a substrate processing method, processing is performed so as to repeat first processing including a step of supporting a substrate at such a temperature that a first raw material and silicon components included in the substrate are not bonded and a first substrate processing step of supplying a material including at least the first raw material to a processing chamber, exciting it and forming the deposit layer of a desired thickness in an element isolation region, and second processing including a second substrate processing step of supplying a material not including the first raw material but including a second raw material to the processing chamber, exciting it, and making the deposit layer react, evaporating it or reforming it.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了去除杂质，进一步改性膜，并且通过CVD法等沉积膜时使膜稳定。解决方案：在基板处理方法中，进行处理以重复第一处理，包括在基板中包含的第一原材料和硅成分未接合的温度下支撑基板的步骤，以及第一基板将至少包含第一原材料的材料供应到处理室，激励它并在元件隔离区域中形成所需厚度的沉积层的第二处理步骤，第二处理步骤包括：第二基板处理步骤，第一原材料，但包括第二原料加工到处理室，激发它，并使沉积层反应，蒸发或重整。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2009117555A Substrate treatment equipment 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2009117555A
公开(公告)日：2009-05-28
申请号：JP2007287845
申请日：2007-11-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TANABE JUNICHI
IPC分类号： H01L21/205 , C23C16/24
摘要： PROBLEM TO BE SOLVED: To selectively grow an epitaxial film on a certain region of a substrate under a low temperature range of, e.g., 500°C or lower. SOLUTION: The substrate treatment equipment has a treatment chamber for treating a substrate, a heating means for heating the substrate, a raw gas supplying means for supplying the treatment chamber with a raw gas including silicon, an etching gas supplying means for supplying the treatment chamber with an etching gas, and a control means for controlling respective means, wherein the control means exercises control so that the supply of a raw gas by the raw gas supplying means and the supply of an etching gas by an etching gas supplying means are performed alternately or simultaneously, and the etching gas is a gas containing fluorine. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在例如500℃或更低的低温范围内选择性地在衬底的某个区域上生长外延膜。解决方案：基板处理设备具有用于处理基板的处理室，用于加热基板的加热装置，用于向处理室供给包括硅的原料气体的原料气体供给装置，用于供给具有蚀刻气体的处理室和用于控制各个装置的控制装置，其中控制装置进行控制，使得原料气体供应装置供应原始气体，并通过蚀刻气体供给装置供应蚀刻气体交替或同时进行，蚀刻气体是含氟气体。版权所有（C）2009，JPO＆INPIT

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