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1. 发明专利

JP2003017471A Plasma treatment apparatus and method 有权
标题翻译：等离子体处理装置和方法
公开(公告)号：JP2003017471A
公开(公告)日：2003-01-17
申请号：JP2001198830
申请日：2001-06-29
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： KAGOSHIMA AKIRA , YAMAMOTO HIDEYUKI , IKUHARA SHIYOUJI , MASUDA TOSHIO , KITSUNAI HIROYUKI , TANAKA JUNICHI , MORIOKA NATSUYO , TAMAOKI KENJI
IPC分类号： H05H1/00 , B01J19/08 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/66
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a plasma treatment method for suppressing influences due to disturbances.
SOLUTION: The plasma treatment apparatus has a plasma treatment apparatus 23 for performing treatment to a sample which is accommodated into a vacuum processing chamber, a sensor 24 for monitoring the amount of process that is being treated, a machining result estimation model 25 for estimating a machining result, based on monitor output from the sensor and the prediction expression of a preset machining result, and an optimum recipe calculation model 26 for calculating the compensation value of treatment conditions, based on the estimation result of the estimation model of the machining result, so that the machining result reaches a target value and controls the plasma treatment apparatus 23 based on recipes being generated by the optimum recipe calculation model.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于抑制由于扰动引起的影响的等离子体处理装置和等离子体处理方法。解决方案：等离子体处理装置具有用于对容纳在真空处理室中的样品进行处理的等离子体处理装置23，用于监视正在处理的处理量的传感器24，用于估计待处理的加工结果估计模型25 基于来自传感器的监视器输出和预设加工结果的预测表达式的加工结果，以及基于加工结果的估计模型的估计结果的用于计算处理条件的补偿值的最优配方计算模型26，使得加工结果达到目标值，并且基于由最佳配方计算模型生成的配方来控制等离子体处理装置23。

2. 发明专利

JP2005123641A Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：JP2005123641A
公开(公告)日：2005-05-12
申请号：JP2004351409
申请日：2004-12-03
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： KAGOSHIMA AKIRA , KIKKAI MOTOHIKO , YAMAMOTO HIDEYUKI , SHIRAISHI DAISUKE , TANAKA JUNICHI , TAMAOKI KENJI , MORIOKA NATSUYO
IPC分类号： H01L21/28 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To provide a method of etching by which unforeseen side effect risk occurring in case that feedback control is performed is reduced, and a control model can be constructed without spending enormous labor and time.
SOLUTION: The etching apparatus carries out the etching of a single film 113 to be etched consisting of a plurality of etching steps to which different recipes are applied respectively. The etching equipment so carries out the etching that a prescribed recipe which is applied to the last etching step (step 5) having influence on an under layer film contacting the etching film to be etched is fixed, a recipe forming means which forms a recipe applied to a residual etching step (step 4) basing on processing result obtained from an inspection device measuring processed profile after the etching is provided, and the etching is performed on the basis of the recipe formed by the recipe forming means.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在进行反馈控制的情况下发生的不可预见的副作用风险的蚀刻方法，并且可以构建控制模型而不花费巨大的劳动和时间。解决方案：蚀刻装置对分别应用不同配方的多个蚀刻步骤进行蚀刻，由单一的待蚀刻膜113进行蚀刻。因此，蚀刻装置进行蚀刻，使与施加在蚀刻用蚀刻膜上的下层膜有影响的最后蚀刻工序（步骤5）的规定的配方固定，形成配方的配方形成机构基于在蚀刻后测量加工轮廓的检查装置获得的处理结果，并且基于由配方形成装置形成的配方进行蚀刻，进行残留蚀刻步骤（步骤4）。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004022747A Etching device and treatment method 有权
公开(公告)号：JP2004022747A
公开(公告)日：2004-01-22
申请号：JP2002174616
申请日：2002-06-14
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： KAGOSHIMA AKIRA , KIKKAI MOTOHIKO , YAMAMOTO HIDEYUKI , SHIRAISHI DAISUKE , TANAKA JUNICHI , TAMAOKI KENJI , MORIOKA NATSUYO
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/3213 , H01L21/66
CPC分类号： H01L21/67253 , G05B2219/45212 , H01J37/32935 , H01L21/32137 , H01L22/20
摘要： PROBLEM TO BE SOLVED: To provide an etching method by which a unexpected side effects can be reduced when feedback controlling and a control model be constructed without requiring much manpower or time.
SOLUTION: The etching device is used to etch a single film 113 through a plurality of etching steps with different recipes. A preset recipe is applied to a final etching step (step 5), where to a lower layer film contact is affected by the film 113, and a recipe-generating means is provided to generate a recipe to be applied to the other etching steps (step 4) on the basis of a treatment result. The etching treatment is applied, based on the recipe generated by the recipe generation means.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2006074067A Plasma treatment apparatus and method 审中-公开
标题翻译：等离子体处理装置和方法
公开(公告)号：JP2006074067A
公开(公告)日：2006-03-16
申请号：JP2005323794
申请日：2005-11-08
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： KAGOSHIMA AKIRA , YAMAMOTO HIDEYUKI , IKUHARA SHIYOUJI , MASUDA TOSHIO , KITSUNAI HIROYUKI , TANAKA JUNICHI , MORIOKA NATSUYO , TAMAOKI KENJI
IPC分类号： H01L21/3065 , C23C14/54 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a plasma treatment method which are capable of suppressing influences due to disturbances.
SOLUTION: The plasma treatment apparatus has a plasma treatment apparatus 23 for performing treatment to a sample which is accommodated in a vacuum processing chamber, a sensor 24 for monitoring the amount of the process during the treatment, a machining result estimation model 25 for estimating a machining result on the basis of monitor output from the sensor and the prediction expression of a preset machining result, and an optimum recipe calculation model 26 for calculating the compensation value of treatment conditions so that the machining result reaches a target value, based on the estimation result of the estimation model of the machining result. The apparatus controls the plasma treatment apparatus 23, based on the recipe which is generated by the optimum recipe calculation model.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供能够抑制由于扰动引起的影响的等离子体处理装置和等离子体处理方法。解决方案：等离子体处理装置具有用于对容纳在真空处理室中的样品进行处理的等离子体处理装置23，用于监视处理期间的处理量的传感器24，加工结果估计模型25 用于基于来自传感器的监视器输出和预设加工结果的预测表达式来估计加工结果，以及用于计算处理条件的补偿值以使加工结果达到目标值的最佳配方计算模型26 对加工结果估计模型的估计结果。该装置基于由最佳配方计算模型生成的配方控制等离子体处理装置23。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005033228A Plasma treatment apparatus and treatment method 有权
标题翻译：等离子体处理装置和处理方法
公开(公告)号：JP2005033228A
公开(公告)日：2005-02-03
申请号：JP2004303161
申请日：2004-10-18
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： KAGOSHIMA AKIRA , YAMAMOTO HIDEYUKI , IKUHARA SHIYOUJI , MASUDA TOSHIO , KITSUNAI HIROYUKI , TANAKA JUNICHI , MORIOKA NATSUYO , TAMAOKI KENJI
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a plasma treatment method which are capable of suppressing the influences due to disturbances. SOLUTION: The apparatus has a plasma treatment apparatus 23 for performing treatment to a sample which is accommodated into a vacuum treatment chamber, a sensor 24 for monitoring the amount of the treatment process, a machining result estimation model 25 for estimating the machining result based on the monitor output from the sensor and the prediction expression of a preset machining result, and an optimum recipe calculation model 26 for calculating the compensation value of treatment conditions so that the machining result reaches a target value, based on the estimation result of the estimation model of the machining result. The apparatus controls the plasma treatment apparatus 23 based on the recipe which is generated by the optimum recipe calculation model. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供能够抑制由于扰动引起的影响的等离子体处理装置和等离子体处理方法。解决方案：该装置具有用于对容纳在真空处理室中的样品进行处理的等离子体处理装置23，用于监视处理处理量的传感器24，用于估计加工的加工结果估计模型25 基于来自传感器的监视器输出和预设加工结果的预测表达式的结果，以及用于计算处理条件的补偿值使得加工结果达到目标值的最优配方计算模型26，基于估计结果加工结果的估计模型。该装置基于由最佳配方计算模型生成的食谱来控制等离子体处理装置23。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2006013013A Control method of plasma etching process device and trimming amount control system 有权
标题翻译：等离子体蚀刻过程控制方法和调整量控制系统
公开(公告)号：JP2006013013A
公开(公告)日：2006-01-12
申请号：JP2004185718
申请日：2004-06-24
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MORIOKA NATSUYO , YAMAMOTO HIDEYUKI , SHIRAISHI DAISUKE , KAGOSHIMA AKIRA , TANAKA JUNICHI
IPC分类号： H01L21/027 , G03F7/40 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a trimming amount control technology for realizing a method of detecting a trimming end point where the trimming amount of each pattern is within a specified value, by establishing a method for monitoring trimming amount of each of sparse pattern and dense pattern during trimming.
SOLUTION: In a plasma etching process device 13, a wafer housed in a vacuum process chamber is subjected to a resist trimming process. It comprises an OES19 that monitors state of the device in plasma processing. Based on a feature amount 16 which is based on the monitoring output from the OES19 and a trimming time 15, a trimming amount prediction value 18 for each sparse/dense pattern is predicted using a trimming amount prediction regression model 17 for each preset sparse/dense pattern. The time point at which the distance from the trimming amount prediction value 18 and a target trimming amount 110 is equal is taken as an end point of trimming process for controlling the plasma etching device 13.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种修整量控制技术，用于实现检测每个图案的修剪量在规定值内的修剪终点的方法，通过建立一种监视每个图案的修剪量的方法图案和密集图案修剪。解决方案：在等离子体蚀刻工艺装置13中，将容纳在真空处理室中的晶片进行抗蚀剂修整处理。它包括一个监视等离子体处理装置的状态的OES19。基于基于来自OES19的监视输出的特征量16和修剪时间15，针对每个稀疏/密集图案，使用修整量预测回归模型17来预测每个稀疏/致密图案的修整量预测值18 模式。将与修整量预测值18的距离和目标修整量110相等的时间点作为用于控制等离子体蚀刻装置13的修整处理的终点。（C）2006年，JPO＆NCIPI

7. 发明专利

JP2004119753A Etching processing apparatus and etching processing method 有权
公开(公告)号：JP2004119753A
公开(公告)日：2004-04-15
申请号：JP2002282164
申请日：2002-09-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MORIOKA NATSUYO , TAMAOKI KENJI , KAGOSHIMA AKIRA , SHIRAISHI DAISUKE , KIKKAI MOTOHIKO , TANAKA JUNICHI , IKUHARA SHOJI , YAMAMOTO HIDEYUKI
IPC分类号： H05H1/46 , H01J37/32 , H01L21/306 , H01L21/3065 , H01L21/3213 , H01L21/66
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an etching processing apparatus and an etching processing method for fine-adjusting the etching process conditions so as to attain a desired finished dimension while suppressing variations in the pattern finish dimensions. SOLUTION: The etching processing apparatus includes: a sensor for monitoring an etching process state; a processing result estimate model for estimating a processing result on the basis of an output from the sensor and a prediction expression of the a prescribed result; and a processing condition calculation model for calculating a processing condition under which the processing result provides a target value on the basis of the estimate result, and in the case of applying etching processing to a semiconductor sample employing polysilicon, the apparatus calculates a set value for at least either or both of oxygen and pressure in the processing conditions on the basis of the processing condition calculation model and applies succeeding etching processing to the sample. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2004119851A Plasma processing apparatus, processing method and plasma processing condition generating system 审中-公开
公开(公告)号：JP2004119851A
公开(公告)日：2004-04-15
申请号：JP2002283807
申请日：2002-09-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAMAOKI KENJI , MORIOKA NATSUYO , YAMAMOTO HIDEYUKI , KAGOSHIMA AKIRA , SHIRAISHI DAISUKE , IKUHARA SHIYOUJI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To set process conditions according to a target processing amount at every change in models by obtaining input and output models necessary for each model to be processed or each processing system while minimizing the number of experiments actually performed. SOLUTION: Models for outputting process conditions and feature parameters of corresponding testpieces are registered on a data controller. When a testpiece is processed, if models for generating process conditions for the testpiece are not yet registered, verification is performed by using a model which exhibits a highest conformity. A new model is generated only when the verification failed. The model and its feature parameters are registered on the data controller. COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2009147183A Abnormality detection method and etching device loaded with the same 审中-公开
标题翻译：异常检测方法及其相关装置
公开(公告)号：JP2009147183A
公开(公告)日：2009-07-02
申请号：JP2007324166
申请日：2007-12-17
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MORIOKA NATSUYO , TAMAOKI KENJI , IKUHARA SHOJI , YAMAMOTO HIDEYUKI , KAGOSHIMA AKIRA , SHIRAISHI DAISUKE
IPC分类号： H01L21/3065 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To detect high frequency components (noise components) generated on time sequential device data; and to extract a device parameter varying in the process of the occurrence of device abnormality.
SOLUTION: A device controller 13 has a plurality of recipes for controlling a plasma treatment device body 50 according to a preset procedure and performing treatment for each sample to the sample 2 carried in, acquires device data when performing the recipe, preserves them in a device information database 102, acquires an abnormality detection parameter when performing a predetermined recipe among the plurality of recipes, discriminates the baseline components of the device data preserved in the device information database 102 and the high frequency components and detects the abnormality of the device data.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：检测在时序设备数据上产生的高频分量（噪声分量）; 并提取在装置异常发生的过程中变化的装置参数。解决方案：装置控制器13具有用于根据预设程序控制等离子体处理装置主体50的多个配方，并且对携带的样品2执行每个样品的处理，在执行配方时获取装置数据，保留它们在设备信息数据库102中，在多个配方中执行预定的配方时，获取异常检测参数，鉴别设备信息数据库102中保存的设备数据的基准分量和高频分量，并检测设备的异常数据。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2012227282A Processing device and processing condition calculation method 审中-公开
标题翻译：处理装置和处理条件计算方法
公开(公告)号：JP2012227282A
公开(公告)日：2012-11-15
申请号：JP2011092385
申请日：2011-04-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORIOKA NATSUYO , ONO MAKOTO
IPC分类号： H01L21/3065 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To provide a technique for deriving a model matching a device state in a short time when the device state changes a lot as a result of device maintenance.SOLUTION: The processing device includes means of adjusting a processing amount prediction multiple regression formula using a processing amount of actual result data and a current processing condition, and calculating a processing condition from a processing target value of a processing object and an explanation factor other than the processing condition included in the processing amount prediction multiple regression formula using the obtained processing amount prediction multiple regression formula, and performs processing under the obtained processing condition.

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