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1. 发明专利

JP2013229150A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2013229150A
公开(公告)日：2013-11-07
申请号：JP2012099512
申请日：2012-04-25
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NAKATANI SHINTARO , TSUBONE TSUNEHIKO , TANIMURA HIDENORI , HASHIMOTO TAKAHISA
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To make lines of magnetic force incident on the whole periphery of a ground electrode including a part where lines of magnetic force are irregular by correcting the incidence direction and density of the lines of magnetic force.SOLUTION: There is provided a plasma processing apparatus that includes a sample table 112 on which a wafer 128 is mounted, a ring-shaped side wall member 111 which forms and grounds an inner wall surface of a processing chamber 101 above a sample table 112 to constitute an earth electrode, and a solenoid coil 109 which is arranged at a periphery of the processing chamber 101, and processes the wafer 128 arranged in the processing chamber 101 using plasma, a magnetic path having minimum magnetic resistance being constituted between an outermost peripheral edge of the side wall member 111 as the ground electrode and a lowest part of the solenoid coil 109 so that a path length (ΣM) in a conductor of a ferromagnetic body is equal to the total of path lengths (ΣN) in conductors of a nonmagnetic body.
摘要翻译：要解决的问题：通过校正磁力线的入射方向和密度，使包含磁力线不正常的部分的接地电极的整个周边的磁力线成为线性。解决方案：提供一种等离子体处理装置，其包括其上安装有晶片128的样品台112，形成并将处理室101的内壁表面形成并对准在样品台112上方以构成接地电极的环形侧壁构件111，以及设置在处理室101的周围的螺线管线圈109，并且使用等离子体处理布置在处理室101中的晶片128，具有最小磁阻的磁路构成在侧壁构件111的最外周边缘之间作为接地电极和螺线管线圈109的最低部分，使得铁磁体的导体中的路径长度（＆Sgr; M）等于非磁性体的导体中的路径长度（＆Sgr; N）。

2. 发明专利

JP2009141034A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2009141034A
公开(公告)日：2009-06-25
申请号：JP2007314133
申请日：2007-12-05
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： OMOTO YUTAKA , YAKUSHIJI MAMORU , TAKATSUMA YUTAKA , YOSHIOKA TAKESHI , TSUBONE TSUNEHIKO
IPC分类号： H01L21/3065 , H01L21/683
CPC分类号： H01L21/67109 , H01J2237/2001 , H01L21/67248
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that improves efficiency of processing by precisely distributing the temperature of a sample or sample stage in a short period of time, and to provide a plasma processing method. SOLUTION: The plasma processing apparatus includes the sample stage disposed in a processing chamber in a vacuum container and processes a sample placed on the sample stage using plasma formed in the processing chamber. The plasma processing apparatus includes: a film which is made of an insulative material and constructs the surface of the sample stage on which the sample is put; a disk-shaped member whose upper surface is joined with the film in the lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming the temperature of the upper surface of the disk-shaped member. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过在短时间内精确地分布样品或样品台的温度来提高加工效率的等离子体处理装置，并且提供等离子体处理方法。解决方案：等离子体处理装置包括设置在真空容器中的处理室中的样品台，并使用在处理室中形成的等离子体处理放置在样品台上的样品。等离子体处理装置包括：由绝缘材料制成并构成其上放置样品的样品台表面的膜; 一个盘形构件，其上表面与膜的下部接合，并且由导热构件制成; 加热器布置在膜中并且布置在膜的中心部分和其外周侧的区域中; 布置在盘状构件中并且用于冷却盘形构件的冷却剂流过的冷却剂通道; 多个电源，其各自调整对所述多个区域中的每个所述加热器的电力; 以及控制器，其通过使用通过假设盘状构件的上表面的温度获得的结果来调整来自多个电源的输出。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008258374A Electrode for mounting wafer 有权
标题翻译：安装电极的电极
公开(公告)号：JP2008258374A
公开(公告)日：2008-10-23
申请号：JP2007098460
申请日：2007-04-04
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAKATSUMA YUTAKA , SHIRAYONE SHIGERU , TSUBONE TSUNEHIKO , ARAMAKI TORU
IPC分类号： H01L21/3065 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable electrode for mounting a wafer owing to decrease in local dielectric breakdown of a dielectric film on the electrode. SOLUTION: The electrode for mounting the wafer comprises the dielectric film 102 on the electrode on an electrode body 101 and provides a plasma etching process to the mounted wafer 103. An intermediate layer 108 is provided at a part that a gas introduction pipe 105 and a lift pin 107 are contacting with the dielectric film 102 on the electrode; and a laminated part of the dielectric film 102 on the electrode as a low resistive dielectric film and the intermediate layer 108 as a high resistive dielectric film are formed to the part. The laminated structure improves a dielectric breakdown voltage of the dielectric film of the electrode for mounting the wafer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供用于安装晶片的高度可靠的电极，因为电极上的电介质膜的局部电介质击穿减少。解决方案：用于安装晶片的电极包括在电极体101上的电极上的电介质膜102，并且向安装的晶片103提供等离子体蚀刻工艺。中间层108设置在气体导入管 105和升降销107与电极上的电介质膜102接触; 并且在作为低电阻电介质膜的电极上的电介质膜102的层叠部分和作为高电阻电介质膜的中间层108形成在该部分上。层叠结构改善了用于安装晶片的电极的电介质膜的绝缘击穿电压。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008251681A Wafer stage 审中-公开
标题翻译： WAFER STAGE
公开(公告)号：JP2008251681A
公开(公告)日：2008-10-16
申请号：JP2007088733
申请日：2007-03-29
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SUGANO SEIICHIRO , TSUBONE TSUNEHIKO
IPC分类号： H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To provide a wafer stage which has improved temperature response and small heat capacity. SOLUTION: The wafer stage includes a basic substance 51, made by pasting together two discs with surface grooves to form a cooling medium groove 82 between the two discs, and a dielectric film 26 formed on the surface of the basic substance 51. Inside a vacuum chamber, the wafer stage further includes an electrostatic chuck 50, which places a semiconductor wafer 9 on the dielectric film 26 for holding the semiconductor wafer 9 thereon, an insulating member 49 which holds the electrostatic chuck 50 via an heat-insulating member in the vacuum chamber, and a pipeline 58 which supplies a cooling medium into the cooling medium groove 82 formed between the two discs. The pipeline 58 is fitted in a direction parallel to a plane, on which the cooling medium groove 82 is formed so that the flow of cooling medium through the pipeline 58 is directed in the direction of axis of the cooling medium groove 82, formed within the discs. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有改善的温度响应和小的热容量的晶片台。解决方案：晶片台包括通过将两个盘与表面槽粘合在一起而形成在两个盘之间的冷却介质槽82和形成在基本物质51的表面上的电介质膜26而制成的碱性物质51。在真空室内，晶片台还包括一个静电吸盘50，它将半导体晶片9放置在用于保持半导体晶片9的电介质膜26上，绝缘部件49通过隔热件保持静电卡盘50 以及将冷却介质供给到形成在两个盘之间的冷却介质槽82中的管道58。管道58沿着平行于平面的方向嵌合，冷却介质槽82形成在该平面上，使得通过管道58的冷却介质的流动指向冷却介质槽82的轴线方向，形成在光盘。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2007048986A Device and method for processing plasma 审中-公开
标题翻译：用于处理等离子体的装置和方法
公开(公告)号：JP2007048986A
公开(公告)日：2007-02-22
申请号：JP2005232608
申请日：2005-08-10
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KITSUNAI HIROYUKI , SUGANO SEIICHIRO , TSUBONE TSUNEHIKO
IPC分类号： H01L21/683 , H01L21/3065 , H05H1/46
CPC分类号： H01L21/6833
摘要： PROBLEM TO BE SOLVED: To provide a device and a method for processing plasma, which easily conduct a desorption of a substrate after it is held and processed with an electrostatic absorption. SOLUTION: The plasma processing device comprises: a processing chamber 101 for plasma processing the substrate 103 to be processed; plasma generating means 105 to 108 for generating the plasma in the processing chamber 101; a wafer stage 102 having an electrostatic chuck for holding the substrate 103 to be processed provided within the processing chamber 101; a detecting means 114 of a leak current value flowing in a circuit formed by a power supply 112 for the elctrostatic absorption, the electrostatic chuck 102, the substrate 103, the plasma 109, an earth line 113; and a means 115 for controlling an applying voltage, so as to set an absorption condition by the current value to reach the set current value. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于处理等离子体的装置和方法，其在通过静电吸收保持和处理之后容易地进行基板的解吸。解决方案：等离子体处理装置包括：处理室101，用于等离子体处理要处理的衬底103; 用于在处理室101中产生等离子体的等离子体产生装置105至108; 具有静电卡盘的晶片台102，其用于保持处理室101内设置的待处理基板103; 在由用于静电吸收的电源112形成的电路中的漏电流值的检测装置114，静电吸盘102，衬底103，等离子体109，接地线113; 以及用于控制施加电压的装置115，以便通过当前值将吸收条件设定为达到设定电流值。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006216822A Wafer processor and wafer processing method 审中-公开
标题翻译： WAFER处理器和WAFER处理方法
公开(公告)号：JP2006216822A
公开(公告)日：2006-08-17
申请号：JP2005028804
申请日：2005-02-04
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SUGANO SEIICHIRO , TANAKA JUNICHI , MIYA TAKESHI , TSUBONE TSUNEHIKO , MAKINO AKITAKA , MASUDA TOSHIO
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01J2237/2001 , H01L21/67069 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a wafer processor capable of obtaining a uniform CD distribution within a wafer plane.
SOLUTION: The wafer processor includes at least two independent series of temperature regulating means 31, 32, 48 and 49 provided on a wafer stage 8, a plurality of cooling gas pressure regulating means 25, 39, 46 and 24 for leading a cooling gas to between a semiconductor wafer and the wafer stage 8, an input power regulating means for a heater 22, and a controlling computer 37. A line width dimension obtained as a result of processing under a plurality of arbitrary temperature conditions obtained by changing at least one of the temperature of a temperature regulating agent, the cooling gas pressure and the input power of the heater is input to calculate at least one of the temperature of the temperature regulating agent, the cooling gas pressure and the input power of the heater for obtaining an arbitrary etching line width dimension by the line width dimension for controlling.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够在晶片平面内获得均匀的CD分布的晶片处理器。解决方案：晶片处理器包括设置在晶片台8上的至少两个独立的温度调节装置31,32,48和49，多个冷却气体压力调节装置25,39,46和24，用于引导冷却气体到半导体晶片和晶片台8之间，用于加热器22的输入功率调节装置和控制计算机37.作为在多个任意温度条件下的处理获得的线宽度尺寸，其通过在输入温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以计算温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，通过用于控制的线宽尺寸获得任意蚀刻线宽度尺寸。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006080222A Wafer processing apparatus 审中-公开
标题翻译： WAFER加工设备
公开(公告)号：JP2006080222A
公开(公告)日：2006-03-23
申请号：JP2004261310
申请日：2004-09-08
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： SUGANO SEIICHIRO , EDAMURA MANABU , UDO RYUJIRO , ARAI MASATSUGU , TANAKA JUNICHI , KANAI SABURO , NISHIO RYOJI , TSUBONE TSUNEHIKO , ARAMAKI TORU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a wafer processing apparatus which can suppress the variation of temperatures of wafers when it processes the wafers successively.
SOLUTION: On the ceramic plate 15 of a wafer stage 2 in a vacuum chamber 9, the wafers 1 are placed one by one. During this operation, the temperature of the wafer 1 is controlled by adjusting the pressure of a thermally conductive gas introduced between the wafer 1 and the ceramic plate 15. When processing the wafer 1 by plasmas 6, the operator can select any combination of processes from among a process of adjusting the pressure of the thermally conductive gas for each wafer, a process by optimization of aging conditions, and a process by optimization of heater conditions as a way of reducing the variation of temperatures of the wafers within a lot. After selecting the process(es), the processing conditions are calculated for the selected process(es) by a control computer of the processing apparatus, and then the wafer is processed based on the calculated processing conditions. Since the variation of temperatures of wafers within a lot can be reduced by an easy operation, plasma processing can be done with good reproducibility even for a process which is largely influenced by temperature.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种晶片处理装置，其可以在连续处理晶片时抑制晶片的温度变化。解决方案：在真空室9中的晶片台2的陶瓷板15上，一个接一个地放置晶片1。在该操作期间，通过调节在晶片1和陶瓷板15之间引入的导热气体的压力来控制晶片1的温度。当通过等离子体6处理晶片1时，操作者可以选择任何组合的工艺在调整每个晶片的导热气体的压力的过程中，通过优化老化条件的过程以及通过优化加热器条件的过程作为减少批次内的晶片的温度变化的方法。在选择处理之后，通过处理装置的控制计算机为所选择的处理计算处理条件，然后基于所计算的处理条件处理晶片。由于可以通过简单的操作来降低批量内的晶片的温度变化，所以即使对于受温度影响很大的过程，也可以以良好的再现性进行等离子体处理。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005079415A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2005079415A
公开(公告)日：2005-03-24
申请号：JP2003309577
申请日：2003-09-02
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ARAMAKI TORU , TSUBONE TSUNEHIKO , UDO RYUJIRO , YOSHIOKA MOTOHIKO , FUJII TAKASHI
IPC分类号： C23C16/46 , H01L21/205 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of accurately processing a sample to be processed by adjusting the temperature of a wafer over a wide range. SOLUTION: The plasma processing apparatus comprises a processing chamber wherein an internal pressure is reduced, a sample tray that is disposed within the processing chamber and a sample to be processed is placed thereon, and a plurality of openings disposed above the sample tray to lead gases into the processing chamber, and processes the sample using plasma produced by using the gases. The plasma processing apparatus further comprises ring-like projections which are concentrically disposed on the surface of the same tray to place the sample thereon and divides a gap between the surface of the sample and the surface of the sample tray into a plurality of areas while contacting their surfaces with the surface of the sample, a first opening that is disposed within an outer-most peripheral first area in the plurality of areas to lead in gases for heat transmission, and a second opening disposed in a second area inside the outer-most peripheral area to make gases flow out of this area. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够通过在宽范围内调节晶片的温度来精确地处理待处理的样品的等离子体处理装置。解决方案：等离子体处理装置包括其中内部压力降低的处理室，设置在处理室内的样品盘和待处理样品放置在其上，并且多个开口设置在样品盘上方将气体引入处理室，并使用通过使用气体产生的等离子体处理样品。等离子体处理装置还包括同心地设置在同一托盘的表面上的环形突起，以将样品放置在其上，并将样品表面与样品盘表面之间的间隙分成多个区域同时接触它们与样品表面的表面，第一开口，其设置在多个区域中的最外围的第一区域内以引导用于传热的气体，以及设置在最外部的第二区域中的第二开口周边区域使气体流出该区域。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004349332A Load lock equipment 有权
标题翻译：装载设备
公开(公告)号：JP2004349332A
公开(公告)日：2004-12-09
申请号：JP2003142174
申请日：2003-05-20
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ARAMAKI TORU , TSUBONE TSUNEHIKO , YAGI KATSUJI
IPC分类号： C23C14/50 , C23C16/44 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide load lock equipment which can convey a high temperature testpiece without deteriorating throughput.
SOLUTION: The load lock equipment 1 carries out the testpiece from a treatment room side to an atmosphere side in the state where the pressure of the treatment room side is held to a prescribed value. The equipment is provided with a testpiece pass inbound way for carrying in a testpiece treatment-finished from the treatment room; a testpiece taking out way for carrying out the carried-in testpiece to an atmosphere side; a stage 6 which is provided with a testpiece retaining stand 3 on the upper part, and mounts the testpiece carried in through the testpiece inbound way for carrying in a testpiece; and a stage driving device for driving the stage at a position connected with the carrying-in way and a position connected with a carry-out way. The stage 6 is provided with a passage 7 for carrying out cooling medium for cooling a stage, and a valve V for intercepting connection of carrying-out pass and a carrying-in pass when the carrying-out pass is connected. The testpiece retaining stand 3 is provided with a recessed part 32 for carrying out the cooling medium on the upper surface.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以输送高温试件而不降低生产量的装载锁定装置。解决方案：在处理室侧的压力保持在规定值的状态下，装载锁定装置1将试验片从治疗室侧向大气侧进行。该设备具有入口方式的试件通行证，用于携带从治疗室处理完毕的试验片; 用于将携带的试件运送到气氛侧的试片; 在上部设置有试件保持架3的台架6，并且通过入口方式将被承载的试件安装在携带试件上; 以及台架驱动装置，用于在与承载方式连接的位置和与进出方式连接的位置中驱动平台。舞台6设有用于进行用于冷却舞台的冷却介质的通道7，以及用于在连接传送通路时拦截执行通过和传入通路的连接的阀V. 试件保持架3设置有用于在上表面上执行冷却介质的凹部32。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004259829A Plasma treatment device 有权
公开(公告)号：JP2004259829A
公开(公告)日：2004-09-16
申请号：JP2003047073
申请日：2003-02-25
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ARAI MASATSUGU , UDO RYUJIRO , SUMIYA MASANORI , KIKKAI MOTOHIKO , TSUBONE TSUNEHIKO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable plasma treatment device in which the temperature distribution of a semiconductor wafer can be adjusted.
SOLUTION: In the plasma treatment device P comprising a holding stage S of such a system that the temperature of a semiconductor wafer W is controlled by controlling the temperature of an electrode block by the circulation of a refrigerant, the temperature of the refrigerant circulating through the holding stage S is controlled by means of a first temperature controller 50 and a second temperature controller 10 comprising a temperature control device utilizing a Peltier effect and a refrigerant having a plurality of temperature differences is fed to the holding stage S thus adjusting the temperature distribution of the semiconductor wafer with high reliability.
COPYRIGHT: (C)2004,JPO&NCIPI

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