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1. 发明专利

JP2014150187A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2014150187A
公开(公告)日：2014-08-21
申请号：JP2013018691
申请日：2013-02-01
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NAKATANI SHINTARO , TANIMURA HIDENORI , TSUBONE TSUNEHIKO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which inhibits local discharge from occurring on an outer surface of a sample table even when having a sample table protective member divided into multiple pieces.SOLUTION: A plasma processing apparatus comprises: a sample table 112; and a sample table protective member for protecting a surface of the sample table 112 which is not covered by a wafer 125 from plasma. The sample table protective member comprises: a susceptor 200 which covers an upper part of the sample table 112; a side wall cover 301 which covers a sample table side wall; and an insulation ring 303 which is disposed so as to cover a gap between the susceptor 200 and the side wall cover 301.
摘要翻译：要解决的问题：提供一种等离子体处理装置，即使具有被划分成多个片的样品台保护构件时，也能够在样品台的外表面上抑制局部放电。解决方案：等离子体处理装置包括：样品台112 ; 以及用于保护未被晶片125覆盖的样品台112的表面与等离子体的样品台保护构件。样品台保护构件包括：覆盖样品台112的上部的基座200; 覆盖样品台侧壁的侧壁盖301; 以及绝缘环303，其设置成覆盖基座200和侧壁盖301之间的间隙。

2. 发明专利

JP2009064864A Semiconductor processing apparatus 审中-公开
标题翻译：半导体加工设备
公开(公告)号：JP2009064864A
公开(公告)日：2009-03-26
申请号：JP2007229867
申请日：2007-09-05
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TANIMURA HIDENORI , SUMIYA MASANORI
IPC分类号： H01L21/683 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor processing apparatus having improved manufacturing yield by controlling generation of damage of a substrate by cooling the substrate sequentially uniformly in the circumferential direction or from the inner circumferential side to the outer circumferential side. SOLUTION: A locking apparatus receives a substrate as the processing object having completed the process in a vacuum processing unit under the evacuated condition and sends the received substrate as the processing object to a space under an atmospheric condition. This locking apparatus is provided with a locking chamber vessel 15 and a stage 8 for setting the substrate as the processing object in the locking chamber vessel. The stage 8 is provided with a plurality of lift pins 7 at its outer circumferential part, a coolant path 10 for allowing the coolant medium to flow in the stage, and a projected part 20 at the inner circumferential part at the upper surface facing the substrate as the processing object. Accordingly, when the substrate W as the processing object is held on the stage via the lift pin, height of a gap formed between the substrate as the processing object and the upper surface of the stage at the inner circumferential part is set lower than that at the outer circumferential part. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过在圆周方向或从内周侧到外周侧依次均匀地冷却基板来控制基板的损坏的产生，提供具有提高的制造成品率的半导体处理装置。解决方案：锁定装置接收作为处理对象的基板，其在真空处理单元中在真空条件下完成处理，并将接收的基板作为处理对象发送到大气条件下的空间。该锁定装置设置有锁定室容器15和用于将作为处理对象的基板设置在锁定室容器中的台架8。台架8在其外圆周部分设置有多个提升销7，用于允许冷却剂介质在平台中流动的冷却剂通道10和在面向衬底的上表面的内周部分处的突出部分20 作为处理对象。因此，当作为处理对象的基板W经由提升销保持在台架上时，形成在作为处理对象的基板与在内周部的台的上表面之间形成的间隙的高度被设定为低于外圆周部分。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2013125796A Plasma processing method and device 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：JP2013125796A
公开(公告)日：2013-06-24
申请号：JP2011272576
申请日：2011-12-13
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NISHIMORI YASUHIRO , TANIMURA HIDENORI , HASHIMOTO TAKAHISA
IPC分类号： H01L21/3065 , H01L21/205 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To arrange a wafer so that a distance from a susceptor arranged to surround a sample table becomes uniform.SOLUTION: Provided are a vacuum processing chamber, a process gas supply device supplying a process gas into the vacuum processing chamber, a sample table arranged in the vacuum processing chamber and on which a sample is mounted, a substrate bias power supply supplying a substrate bias voltage to the sample table, plasma generation means generating plasma in the vacuum processing chamber, a susceptor arranged on outer periphery of the sample table, and a vacuum transfer device. A plasma processing method for mounting an unprocessed sample on the sample table by the vacuum transfer device and carrying the processed sample out from the processing table, includes: measuring distribution of a processing speed for the processed sample; calculating deviation of a position of the sample to a position of the susceptor on the basis of the measured distribution of the processing speed; and adjusting a transfer position by the vacuum transfer device on the basis of the calculation result.
摘要翻译：要解决的问题：为了布置晶片，使得从布置成围绕样品台的基座的距离变得均匀。解决方案：提供真空处理室，将处理气体供应到真空处理室中的处理气体供给装置，布置在真空处理室中并在其上安装样品的样品台，提供基板偏置电源到样品台的衬底偏置电压，在真空处理室中产生等离子体的等离子体产生装置，设置在样品台的外周的基座和真空传送装置。一种等离子体处理方法，用于通过真空转印装置将未处理的样品安装在样品台上并将处理过的样品从处理台传送出去，包括：测量处理样品的处理速度分布; 基于所测量的处理速度分布来计算样品位置与基座位置的偏差; 并根据计算结果通过真空传送装置调整传送位置。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2010171286A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2010171286A
公开(公告)日：2010-08-05
申请号：JP2009013769
申请日：2009-01-26
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： OKUDA KOJI , NAKAMURA TSUTOMU , KOBAYASHI MICHIAKI , ISOZAKI SHINICHI , TANIMURA HIDENORI
IPC分类号： H01L21/3065 , H01L21/304 , H01L21/683
CPC分类号： C23C16/4586 , C23C16/505 , H01L21/67109 , H01L21/6719 , H01L21/68785
摘要： PROBLEM TO BE SOLVED: To improve reliability by suppressing dew formation on a sample stand in a processing chamber. SOLUTION: A plasma processing apparatus includes the processing chamber 200 which is arranged in a vacuum container and supplied with a gas to generate plasma, the nearly cylindrical sample stand 250 which is arranged in the processing chamber and mounted with a wafer, an opening 204 for discharging the gas below the sample stand, a medium passage 304 which is arranged in the sample stand and in which a heat exchanging medium flows, a beam 216 for supporting the sample stand horizontally in the processing chamber, a cylindrical space 214 which is arranged below the passage in the sample stand and has its inside held at atmospheric pressure, a connection path 309 for linking an inner sidewall of the space to outside the vacuum container, and a conduit for the heat exchanging medium which is arranged in the connection path, wherein a high-temperature gas is supplied from a driving mechanism 308 for a pin for wafer on a center side which is arranged in the space and a plurality of metallic blocks covering connection portions of a plurality of conduits for medium for the sample stand on an outer peripheral side thereof to pass through the connection path and the gas in the space is discharged. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过抑制处理室中的样品台上的结露来提高可靠性。解决方案：等离子体处理装置包括：处理室200，其布置在真空容器中并供应气体以产生等离子体;几乎圆柱形的样品台250，布置在处理室中并安装有晶片; 用于将样品台下面的气体排出的开口204，布置在样品台中并且热交换介质流动的介质通道304，用于在样品台中水平地支撑样品台的光束216;圆柱形空间214，布置在样品台的通道的下方，其内部保持在大气压力下，连接路径309用于将空间的内侧壁与真空容器的外部连接，以及布置在连接中的热交换介质的导管路径，其中从布置在该空间中的中心侧的用于晶片的引脚的驱动机构308供给高温气体，并且多个元件多个块体覆盖用于样品台的介质的多个管道的连接部分，其外周侧通过连接路径并且排出该空间中的气体。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2012054491A Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：JP2012054491A
公开(公告)日：2012-03-15
申请号：JP2010197648
申请日：2010-09-03
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MIZOBE YUYA , TANIMURA HIDENORI , KANEKIYO TOKIMITSU , OKIGUCHI MASASHI
IPC分类号： H01L21/3065 , C23C16/50 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of realizing enlargement of a pressure adjusting area in a processing chamber by making a vacuum container in such a shape that gas is easy to flow and at the same time adding a pressure adjustment mechanism thereto, as well as by using a gate valve as a variable conductance valve in the vacuum container to adjust a gas exhaust.SOLUTION: Etching gas is arranged to flow at the upper part of an electrode part 211 of a processing chamber 210 in a plasma processing apparatus to generate plasma by applying an electric wave introduced by a discharger 200 so as to etch a wafer on the electrode part 211. The gas used for the etching treatment and particles of a product material and the like produced by the etching treatment are exhausted by an exhaust part 220; the gas and the particles of the product material and the like through a chamber 221, a gate valve 222, and a vacuum pump 223. As means to achieve a prescribed pressure at the time of the etching treatment, the chamber 221 with coax and capable of moving in the axial direction and the gate valve 222 capable of opening both left and right ways are used to control the pressure.
摘要翻译：解决的问题：提供一种等离子体处理装置，其能够通过使真空容器形成为容易流动的形状，并且同时添加压力来实现处理室中的压力调节区域的放大调节机构，以及通过在真空容器中使用闸阀作为可变电导阀来调节排气。解决方案：蚀刻气体被布置成在等离子体处理装置中的处理室210的电极部分211的上部处流动，以通过施加由放电器200引入的电波来产生等离子体，以便蚀刻晶片电极部分211.用于蚀刻处理的气体和通过蚀刻处理产生的产品材料等的颗粒被排气部分220排出; 气体和产品材料的颗粒等通过腔室221，闸阀222和真空泵223.作为在蚀刻处理时达到规定压力的手段，具有同轴电缆和能够使用能够沿轴向移动的能够打开左右两通道的闸阀222来控制压力。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012023164A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2012023164A
公开(公告)日：2012-02-02
申请号：JP2010159259
申请日：2010-07-14
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KUSUMOTO HIRONORI , KIHARA HIDEKI , NAKAMURA TSUTOMU , TANIMURA HIDENORI , MIZOBE YUYA
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/3266 , H01J37/32816
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which increases processing yield by detecting seal malfunction in each gate.SOLUTION: The plasma processing apparatus comprises an outer chamber forming a vacuum vessel, an inner chamber disposed inside the outer chamber and having a depressurized processing chamber inside in which plasma is created, a sample stand disposed below the processing chamber in the inner chamber, on which a wafer to be processed by the plasma is placed and held, a first gate valve disposed on a side wall of the inner chamber for opening or closing a gate where the wafer is transported through the inside, and a second gate valve disposed on a side wall of the outer chamber for opening or closing a gate where the wafer is transported through the inside. The plasma apparatus detects pressure variation in an intermediate chamber formed of a space between the inner chamber and the outer chamber sealed by closing the first and the second gate valves after placing the wafer on the sample stand, and thereby detecting degradation on sealing by the first or the second gate valve.
摘要翻译：要解决的问题：提供一种等离子体处理装置，其通过检测每个门中的密封故障来提高加工产量。解决方案：等离子体处理装置包括形成真空容器的外室，设置在外室内的内室，内部形成有等离子体的减压处理室，在内部设置处理室下方的样品台放置并保持由等离子体处理的晶片的腔室，设置在内室的侧壁上的第一闸阀，用于打开或关闭晶片通过内部输送的栅极;以及第二闸阀设置在外室的侧壁上，用于打开或关闭晶片通过内部输送的栅极。等离子体装置通过在将晶片放置在样品台上之后关闭第一和第二闸阀而密封的内室和外室之间的空间形成的中间室中的压力变化，从而检测由第一或第二闸阀。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011151098A Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：JP2011151098A
公开(公告)日：2011-08-04
申请号：JP2010009615
申请日：2010-01-20
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NAKAMURA TSUTOMU , TANIMURA HIDENORI , MIZOBE YUYA
IPC分类号： H01L21/02 , H01L21/3065
CPC分类号： H01L21/67772 , H01L21/67766
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus that is improved in production efficiency by shortening a stop time of the apparatus.
SOLUTION: The vacuum processing apparatus includes a transfer container for transferring a wafer to be processed in the internal space, a vacuum container coupled to the sidewall of the transfer container and including a processing chamber having a sample stage therein on which the wafer is mounted, a lid member opened or closed by rotation above the vacuum container, an inner chamber member arranged in the vacuum container and making up the inner wall of the processing chamber, and a jig coupled to the sidewall of the vacuum container to lift and hold the inner chamber member by being coupled thereto. The jig includes a first joint portion having vertical and horizontal shafts, a length-extensible arm portion rotatable around each shaft of the first joint portion, and a second joint portion in which the coupled inner chamber member can rotate around the horizontal axis thereof while arranged at a tip portion of the arm portion.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种真空处理装置，其通过缩短装置的停止时间来提高生产效率。解决方案：真空处理设备包括用于在内部空间中传送待处理晶片的转移容器，耦合到转移容器的侧壁的真空容器，并且包括其中具有样品台的处理室，晶片安装有通过在真空容器上方旋转而打开或关闭的盖构件，布置在真空容器中并构成处理室的内壁的内室构件和联接到真空容器的侧壁的夹具，以提升和通过与其连接来保持内室构件。该夹具包括具有垂直和水平轴的第一接合部分，可围绕第一接合部分的每个轴转动的长度可延伸臂部分和第二接合部分，其中联接的内部室部件可绕其水平轴线旋转，同时布置在臂部的前端部。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2015025497A シャワープレート保持具审中-公开
标题翻译：淋浴板保持工具
公开(公告)号：JP2015025497A
公开(公告)日：2015-02-05
申请号：JP2013155139
申请日：2013-07-26
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： TANIMURA HIDENORI
IPC分类号： F16B47/00 , B25J15/06 , C23C16/44 , H01L21/3065
摘要：【課題】シャワープレートを保持する際に局所的な力が掛かることを抑制できる保持具を提供する。【解決手段】シャワープレートの表面に接触して吸着させる吸着部と作業者が把持する把手部とを有し、前記吸着部の前記シャワープレートと接触する側の凹み内に配置され前記シャワープレートの表面に吸着するシート状部材とこのシート状部材状から突出して当該吸着部が前記シャワープレートの表面に接触した状態でこのシャワープレートに配置された貫通孔を塞ぐ突起部とを備え、前記シート状部材と前記突起部と前記シャワープレートの表面との間の空間が減圧されて前記吸着部と前記シャワープレートとの間で吸着力を発生させる保持具。【選択図】図1
摘要翻译：要解决的问题：提供一种能够在保持淋浴板时能够抑制局部力的保持工具。解决方案：保持工具包括：用于接触和吸收淋浴板表面的吸收部分，用于操作者的把手部分握; 布置在吸收部分的接触淋浴板的一侧的凹部中并被吸收到淋浴板的表面上的片状构件; 以及突起部，从所述片状部件伸出，并且在吸收部与所述喷淋板的表面接触的同时，阻挡布置在所述喷淋板上的贯通孔。在片状构件，突起部和喷淋板的表面之间的空间中的压力减小，从而在吸收部和淋浴板之间产生吸收力。

9. 发明专利

JP2013229150A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2013229150A
公开(公告)日：2013-11-07
申请号：JP2012099512
申请日：2012-04-25
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： NAKATANI SHINTARO , TSUBONE TSUNEHIKO , TANIMURA HIDENORI , HASHIMOTO TAKAHISA
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To make lines of magnetic force incident on the whole periphery of a ground electrode including a part where lines of magnetic force are irregular by correcting the incidence direction and density of the lines of magnetic force.SOLUTION: There is provided a plasma processing apparatus that includes a sample table 112 on which a wafer 128 is mounted, a ring-shaped side wall member 111 which forms and grounds an inner wall surface of a processing chamber 101 above a sample table 112 to constitute an earth electrode, and a solenoid coil 109 which is arranged at a periphery of the processing chamber 101, and processes the wafer 128 arranged in the processing chamber 101 using plasma, a magnetic path having minimum magnetic resistance being constituted between an outermost peripheral edge of the side wall member 111 as the ground electrode and a lowest part of the solenoid coil 109 so that a path length (ΣM) in a conductor of a ferromagnetic body is equal to the total of path lengths (ΣN) in conductors of a nonmagnetic body.
摘要翻译：要解决的问题：通过校正磁力线的入射方向和密度，使包含磁力线不正常的部分的接地电极的整个周边的磁力线成为线性。解决方案：提供一种等离子体处理装置，其包括其上安装有晶片128的样品台112，形成并将处理室101的内壁表面形成并对准在样品台112上方以构成接地电极的环形侧壁构件111，以及设置在处理室101的周围的螺线管线圈109，并且使用等离子体处理布置在处理室101中的晶片128，具有最小磁阻的磁路构成在侧壁构件111的最外周边缘之间作为接地电极和螺线管线圈109的最低部分，使得铁磁体的导体中的路径长度（＆Sgr; M）等于非磁性体的导体中的路径长度（＆Sgr; N）。

10. 发明专利

JP2006135016A Load port 有权
标题翻译：负载端口
公开(公告)号：JP2006135016A
公开(公告)日：2006-05-25
申请号：JP2004320809
申请日：2004-11-04
申请人： Hirata Corp , Hitachi High-Technologies Corp , 平田機工株式会社 , 株式会社日立ハイテクノロジーズ
发明人： TANIMURA HIDENORI , SORAOKA MINORU , YOKOYAMA SHINJI , TOYODA AKIYOSHI
IPC分类号： H01L21/02 , F24F7/06 , H01L21/677
CPC分类号： H01L21/67775 , H01L21/67017 , H01L21/67772
摘要： PROBLEM TO BE SOLVED: To provide a load port which has neither possibility of corruption occurrence, nor possibility of dust adhesion in conveyance of a sample. SOLUTION: The load port is provided with a table 24 which is arranged on the front side of an air conveyance unit 5 and on which a container 15 storing the sample of an object to be processed is placed on the front side and a Boltz plate 16 which divides the inner part of the conveyance room 12 of the air conveyance unit 5 from outside. In the load port 9 taking out the sample from within the container 15 by an opening part formed in the Boltz plate 16 and storing the sample in the container 15, an exhaust duct 20 is installed below the opening along the back side of the Boltz plate 16, and atmosphere in the exhaust room 12 is exhausted into air by a fan 21. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供既不会发生腐败的可能性的负载端口，也不具有在样品输送时灰尘附着的可能性。
解决方案：装载端口设置有台24，其布置在空气输送单元5的前侧，并且将存储待加工物体的样品的容器15放置在其上，并且玻璃板16将空气传送单元5的搬送室12的内部与外部分隔开。在负载端口9中，通过形成在玻璃板16中的开口部分从容器15中取出样品并将样品储存在容器15中，排气管20沿着玻璃柱的背面安装在开口下方 16，排气室12的气氛由风扇21排出空气。版权所有（C）2006，JPO＆NCIPI

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