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1. 发明专利

JP2006245621A Method of plasma processing 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：JP2006245621A
公开(公告)日：2006-09-14
申请号：JP2006168579
申请日：2006-06-19
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SUMIYA MASANORI , KIKKAI MOTOHIKO , UDO RYUJIRO , ARAI MASATSUGU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which enhances the throughput.
SOLUTION: In the plasma processing apparatus, a sample placed on a stand displaced inside a processing chamber is processed, by using a plasma formed in the processing chamber. The stand is provided above the plasma processing apparatus with a first member, coming into contact with the sample thereon and a second member disposed below the first member. The plasma processing apparatus comprises a temperature-adjusting means, disposed inside the stand for adjusting the first and second temperature on the outer peripheral side and central side of this stand, respectively, and a pressure-adjusting means, disposed in between a surface of the stand and the sample coming into contact with the surface, for adjusting the first and second pressure on an outer peripheral side and inner peripheral side of the sample, respectively.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供提高生产量的等离子体处理装置。解决方案：在等离子体处理装置中，通过使用在处理室中形成的等离子体，处理放置在处理室内移动的支架上的样品。在等离子体处理装置的上方设有支架，其具有与其上的样品接触的第一构件和设置在第一构件下方的第二构件。等离子体处理装置包括温度调节装置，设置在支架内部，用于分别调节该支架的外周侧和中心侧的第一和第二温度;以及压力调节装置，设置在该表面之间并且样品与表面接触，用于分别调节样品的外周侧和内周侧上的第一和第二压力。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005072521A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2005072521A
公开(公告)日：2005-03-17
申请号：JP2003303971
申请日：2003-08-28
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： UDO RYUJIRO , ARAI MASATSUGU , SUGANO SEIICHIRO , TSUBONE TSUNEHIKO , ARAMAKI TORU
IPC分类号： H01L21/3065 , H01L21/31 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can control electrostatic attraction force holding a workpiece at an optimum value. SOLUTION: A clearance between a workpiece 700 and an electrostatic chuck 131 attracting the workpiece is filled with gas, an ESC voltage applied to the electrode of the electrostatic chuck is changed to keep the amount of the gas leaking from the clearance into the plasma processing device at a specified value or thereabouts, and the attraction force of the workpiece is controlled. The cycle of maintenance and replacement of the electrostatic chuck can be extended by optimizing attraction force corresponding to change of the surface condition of the electrostatic chuck, by reducing the number of contaminations sticking to the backside of the workpiece by lowering the attraction force of the workpiece. When the leak amount of the gas can not be kept at the specified value or thereabouts within the range of a predetermined ESC applied voltage, abnormality is indicated. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够将保持工件的静电吸引力控制在最佳值的等离子体处理装置。解决方案：工件700和吸附工件的静电吸盘131之间的间隙填充有气体，改变施加到静电卡盘的电极的ESC电压，以将气体从间隙泄漏的量保持在处于规定值的等离子体处理装置，并且控制工件的吸引力。可以通过优化与静电卡盘的表面状态变化相对应的吸引力来延长静电卡盘的维护和更换循环，通过降低工件的吸引力来减少粘附在工件背面的污染物的数量。当在预定的ESC施加电压的范围内气体的泄漏量不能保持在规定值以下时，表示异常。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004259826A Plasma processing system 有权
公开(公告)号：JP2004259826A
公开(公告)日：2004-09-16
申请号：JP2003047062
申请日：2003-02-25
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SUMIYA MASANORI , KIKKAI MOTOHIKO , UDO RYUJIRO , ARAI MASATSUGU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing system in which throughput is enhanced.
SOLUTION: In the plasma processing system for processing a sample mounted on a stage disposed inside a processing chamber using a plasma formed in the processing chamber, the stage has a first member located above to touch the sample and a second member located below the first member. The plasma processing system comprises a means disposed inside the stage and adjusting the outer circumferential side and the central side of the stage, respectively, to a first and a second temperatures, and a means for adjusting the outer circumferential side and the inner circumferential side of the sample, respectively, to a first and a second pressures between the surface of the stage and the sample touching that surface.
COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2005079539A Plasma treatment apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2005079539A
公开(公告)日：2005-03-24
申请号：JP2003311730
申请日：2003-09-03
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： ARAI MASATSUGU , UDO RYUJIRO , SUGANO SEIICHIRO , YOSHIDA TAKESHI
IPC分类号： F25B1/00 , H01L21/00 , H01L21/3065
CPC分类号： H01L21/67248 , H01J37/32082 , H01J2237/2001 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus having an electrostatic adsorption electrode capable of controlling a temperature of a semiconductor wafer under a high efficient etching treatment.
SOLUTION: The plasma treatment apparatus is provided with: a dielectric film 4 on a front surface thereof; an electrode block S in which a passage 6 for refrigerant is formed; a maintenance stage of a system which maintains a semiconductor wafer W through a dielectric film 4 on the electrode block S surface to perform a temperature control; and a refrigeration cycle 50 consisting of a compressor 52, a condenser 55, an expansion valve 53, a heat exchanger 54 with a built-in heater, and an evaporator. In the plasma treatment apparatus, the electrode block S is used as the evaporator of the refrigeration cycle, and a temperature of the electrode block S is controlled by a temperature controller of a direct expansion system which performs expansion by directly circulating the refrigerant within the electrode block S.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有能够在高效蚀刻处理下控制半导体晶片的温度的静电吸附电极的等离子体处理装置。解决方案：等离子体处理装置设置有：前表面上的电介质膜4; 形成有用于制冷剂的通道6的电极块S; 通过电极块S表面上的电介质膜4维持半导体晶片W以进行温度控制的系统的维护阶段; 以及由压缩机52，冷凝器55，膨胀阀53，具有内置加热器的热交换器54和蒸发器构成的制冷循环50。在等离子体处理装置中，电极块S用作制冷循环的蒸发器，电极块S的温度由直接膨胀系统的温度控制器控制，该直接膨胀系统通过使制冷剂在电极内直接循环来进行膨胀（C）2005，JPO＆NCIPI

5. 发明专利

JP2004016884A Sample treating apparatus 审中-公开
公开(公告)号：JP2004016884A
公开(公告)日：2004-01-22
申请号：JP2002173567
申请日：2002-06-14
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SUMIYA MASANORI , IKUHARA SHIYOUJI , UDO RYUJIRO
IPC分类号： B01J3/00 , B01J19/00 , B01J19/08 , B01J19/12 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a sample treating apparatus capable of evenly treating a sample with a simple structure.
SOLUTION: A sample 6 is able to be evenly treated by irradiating the whole of or part of the sample 6 with an optical energy 9 and without providing any functions to a sample table.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004259825A Plasma treatment device 有权
公开(公告)号：JP2004259825A
公开(公告)日：2004-09-16
申请号：JP2003047045
申请日：2003-02-25
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ARAI MASATSUGU , UDO RYUJIRO , SUMIYA MASANORI , KIKKAI MOTOHIKO
IPC分类号： H05H1/46 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device in which the yield of semiconductor elements can be increased greatly. SOLUTION: In the plasma treatment device where an adsorption film 4 is formed on the surface of an electrode block 1 by spraying, the surface of the adsorption film is composed of protrusions having a circular or polygonal cross-section and a substantially circular ring at the outermost circumferential part, and a holding stage controls the temperature of a semiconductor wafer 106 by introducing heat transfer gas to a gap between the surface of the adsorption film and the semiconductor wafer 106, heat transfer gas inlets 6 are provided to introduce the heat transfer gas from two or more radial directions above the surface of the holding stage. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2004259745A Plasma treatment device and method of manufacturing electrostatic chuck 有权
公开(公告)号：JP2004259745A
公开(公告)日：2004-09-16
申请号：JP2003045775
申请日：2003-02-24
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： UDO RYUJIRO , ARAI MASATSUGU , SUMIYA MASANORI
IPC分类号： C23C16/458 , H01L21/3065 , H01L21/31 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive plasma treatment device that can be operated easily or is high in reliability, and to provide a method of manufacturing an electrostatic chuck. SOLUTION: The plasma treatment device is provided with a plasma generating means which generates plasma in a vacuum-treating chamber and an electrostatic chuck which holds a wafer to be treated on its top surface. In the treatment device, a face forms an electrostatic dipole in which the face is composed of an insulating substrate 6, a plurality of conductive aluminum thin films 4a and 4b formed on the surface of the substrate 6, and alumite films 2a and 2b formed by anodizing the surfaces of the thin films 4a and 4b and attracts a wafer 7 when DC voltages of different directions are respectively impressed upon the thin films 4a and 4b. COPYRIGHT: (C)2004,JPO&NCIPI

8. 发明专利

JP2004079820A Plasma processing apparatus 有权
公开(公告)号：JP2004079820A
公开(公告)日：2004-03-11
申请号：JP2002238819
申请日：2002-08-20
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： UDO RYUJIRO , ARAI MASATSUGU , SUMIYA MASANORI
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus for performing an uniform process inside a wafer surface. SOLUTION: There is provided a plasma processing apparatus comprising a processing chamber for processing test portions, an evacuating means for reducing the pressure of the processing chamber, a processed gas feeding means for feeding processed gases to the processing chamber, a test portion holding means for holding the test portions processed inside the processing chamber, a bias applying means for applying a bias voltage to the test portion holding means, an electrostatic absorbing means for absorbing the test portions electrostatically to the test portion holding means, and a plasma generating means for generating plasma in the processing chamber. Further, in the apparatus, the test portion holding means has a stepped upper surface, the test portions are put on the uppermost position, an annular member comprising electrical conductors to which the bias voltage is applicable is provided in a lower surface than a surface that the test portions are put on, and besides an upper surface of the annular member is flush with the upper surface of the test portion or lower than it, and a member consisting of a dielectric covers the upper surface of the annular member. COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2006080222A Wafer processing apparatus 审中-公开
标题翻译： WAFER加工设备
公开(公告)号：JP2006080222A
公开(公告)日：2006-03-23
申请号：JP2004261310
申请日：2004-09-08
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： SUGANO SEIICHIRO , EDAMURA MANABU , UDO RYUJIRO , ARAI MASATSUGU , TANAKA JUNICHI , KANAI SABURO , NISHIO RYOJI , TSUBONE TSUNEHIKO , ARAMAKI TORU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a wafer processing apparatus which can suppress the variation of temperatures of wafers when it processes the wafers successively.
SOLUTION: On the ceramic plate 15 of a wafer stage 2 in a vacuum chamber 9, the wafers 1 are placed one by one. During this operation, the temperature of the wafer 1 is controlled by adjusting the pressure of a thermally conductive gas introduced between the wafer 1 and the ceramic plate 15. When processing the wafer 1 by plasmas 6, the operator can select any combination of processes from among a process of adjusting the pressure of the thermally conductive gas for each wafer, a process by optimization of aging conditions, and a process by optimization of heater conditions as a way of reducing the variation of temperatures of the wafers within a lot. After selecting the process(es), the processing conditions are calculated for the selected process(es) by a control computer of the processing apparatus, and then the wafer is processed based on the calculated processing conditions. Since the variation of temperatures of wafers within a lot can be reduced by an easy operation, plasma processing can be done with good reproducibility even for a process which is largely influenced by temperature.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种晶片处理装置，其可以在连续处理晶片时抑制晶片的温度变化。解决方案：在真空室9中的晶片台2的陶瓷板15上，一个接一个地放置晶片1。在该操作期间，通过调节在晶片1和陶瓷板15之间引入的导热气体的压力来控制晶片1的温度。当通过等离子体6处理晶片1时，操作者可以选择任何组合的工艺在调整每个晶片的导热气体的压力的过程中，通过优化老化条件的过程以及通过优化加热器条件的过程作为减少批次内的晶片的温度变化的方法。在选择处理之后，通过处理装置的控制计算机为所选择的处理计算处理条件，然后基于所计算的处理条件处理晶片。由于可以通过简单的操作来降低批量内的晶片的温度变化，所以即使对于受温度影响很大的过程，也可以以良好的再现性进行等离子体处理。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005089864A Plasma treatment device 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2005089864A
公开(公告)日：2005-04-07
申请号：JP2004284368
申请日：2004-09-29
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： ARAI MASATSUGU , UDO RYUJIRO , SUGANO SEIICHIRO , YOSHIDA TAKESHI
IPC分类号： C23C16/46 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device having an electrostatic attraction electrode capable of controlling the temperature of a semi-conductor wafer under etching with high efficiency. SOLUTION: The plasma treatment device has an electrode block S having a dielectric film 4 on a surface and a refrigerant passage 6 formed therein, and has a holding stage of holding a semi-conductor wafer W and controlling the temperature thereof via the dielectric film on the surface of the electrode block. The plasma treatment device further has a refrigerating cycle 50 comprising a heat exchanger 54 with a compressor 52, a condenser 55, an expansion valve 53 and a heater built therein and an evaporator. The electrode block S is used for the evaporator of the refrigerating cycle, and a temperature control device of the direct expansion system to perform expansion by directly circulating the refrigerant in the electrode block controls the temperature of the electrode block S. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供具有能够高效率地蚀刻半导体晶片的温度的静电吸引电极的等离子体处理装置。解决方案：等离子体处理装置具有在表面上形成有电介质膜4的电极块S和形成在其中的制冷剂通道6，并且具有保持半导体晶片W的保持阶段，并且经由电极块表面上的介电膜。等离子体处理装置还具有包括具有压缩机52，冷凝器55，膨胀阀53和内置加热器的热交换器54和蒸发器的制冷循环50。电极块S用于制冷循环的蒸发器，并且通过直接循环制冷剂在电极块中进行膨胀的直接膨胀系统的温度控制装置控制电极块S的温度。版权所有：（C）2005，JPO＆NCIPI

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