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    • 10. 发明专利
    • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    • JPH04123442A
    • 1992-04-23
    • JP24444990
    • 1990-09-14
    • HITACHI LTDHITACHI VLSI ENG
    • TSUBOI TOSHIHIROSHIRAI MASAYUKIMATSUNAGA TOSHIHIROKOSAKU HIROSHIOTSUKA KANJI
    • H01L23/36H01L21/52
    • PURPOSE:To make improved heat radiation and relieved thermal stress compatible with each other by providing a high heat conductive synthetic resin adhesive at the central part of a semiconductor chip and providing the peripheral part with a low Young's modulus synthetic resin adhesive. CONSTITUTION:A heat diffusion plate 5 is adhered to an insulated substrate 2 with an adhesive 6, and a heat radiation plate 7 is adhered to the heat diffusion plate 5 by the adhesive 6. On the other hand, a semiconductor chip 8 is connected to the undersurface central part of the heat diffusion plate 5. The semiconductor chip 8 is adhered to the undersurface central of the heat diffusion plate 5 with two kinds of adhesives 6a, 6b having different characteristics. Of two kinds of adhesives 6a, 6b, the adhesive 6a is arranged at the central part of the chip 8, and the adhesive 6b is arranged at the peripheral part of the chip 8. The adhesive 6a is an adhesive having high heat conductivity thus contribute to improving heat radiation and the adhesive 6b arranged at the peripheral part of the chip 8 where stress is liable to be especially concentrated, is an adhesive having a low Young's modulus thus contributing to relieve stress.