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1. 发明专利

JPH08300394A MOLD AND MOLDING OF RESIN SEAL ELEMENT USING THE SAME 失效
公开(公告)号：JPH08300394A
公开(公告)日：1996-11-19
申请号：JP10507695
申请日：1995-04-28
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： HORIUCHI HITOSHI , TATE HIROSHI , OKINAGA TAKAYUKI , EMATA KOJI , SASAKI MASAKO , NOSE FUJIAKI , HONDA ATSUSHI
IPC分类号： B29C45/26 , B29C45/02 , B29C45/14 , B29L31/34 , H01L21/56
摘要： PURPOSE: To provide a mold preventing trouble such that the resin supplied into a cavity transfers to one surface of a plate-shaped article and to prevent the molding inferiority of a resin seal element to which one surface of the plate-shaped article is exposed. CONSTITUTION: In a mold 1 equipped with a cavity 2 having a plate-shaped article 14 mounted on the mounting region of the bottom surface 2A thereof, a recessed part, 3 is formed to the central part of the mounting region of the bottom surface 2A of the cavity 2. In a method for molding a resin seal element 10 wherein one surface of the plate-shaped article 14 is exposed, a stage preparing the mold 1 having the cavity 2 constituting the recessed part 3 at the central part of the mounting region of the bottom surface 2A on which the plate-shaped article 14 is mounted, a stage mounting the plate-shaped article 14 to the mounting region of the bottom surface of the cavity 2 and a stage supplying a resin 10 into the cavity 2 are provided.

2. 发明专利

JPH08227903A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08227903A
公开(公告)日：1996-09-03
申请号：JP34237495
申请日：1995-12-28
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： OKINAGA TAKAYUKI , TATE HIROSHI , OZAKI HIROSHI , OTSUKA KANJI , FURUKAWA MICHIAKI , YAMAZAKI YASUYUKI
IPC分类号： H01L21/52 , H01L21/56 , H01L21/60 , H01L23/50
摘要： PURPOSE: To enhance the bonding strength between the resin of a package and the lead even for a semiconductor device mounting a large pellet by providing a first lead traversing one side of a semiconductor pellet toward a bonding pad, and a second lead traversing the extension of one side and facing the bonding pad. CONSTITUTION: Outer leads are arranged on the side of a pellet where the bonding pad is not arranged and the inner leads of the leads 2a are extended along the major surface of the pellet 1 where the circuit is not formed. The forward end 2b thereof is extended over the side of the pellet where bonding pads 7 are arranged. Since the inner lead of the lead 2a is very long, bonding strength can be enhanced significantly between the lead and the package resin 4. Furthermore, even when a large pellet is mounted, delamination can be prevented effectively at the interface of lead when the outer lead is bent, for example.

3. 发明专利

JPH08115997A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH08115997A
公开(公告)日：1996-05-07
申请号：JP24663494
申请日：1994-10-13
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： EMATA KOJI , TATE HIROSHI , HORIUCHI HITOSHI , NISHIUMA MASAHIKO , OGUMA HIROSHI , KOMATA MAKOTO , SASAKI MASAKO , OKINAGA TAKAYUKI
IPC分类号： H01L21/60 , H01L23/12 , H05K3/34
摘要： PURPOSE: To provide a semiconductor device, in which there is no unconnected bump of and no bridge failure, the establishment of its inspection method is not necessary and the thermal fatigue life of connection parts is prolonged. CONSTITUTION: A semiconductor chip 1, on the surface of which terminals (pads) 2 are formed, is fixed to a wiring board 3 that is made of an insulating material like resin or ceramic with an adhesive. Conductive parts 5, each of which comprises a wiring pattern that extends from the front surface to the rear surface of the wiring board 3 via through holes 4, are formed. On the conductive parts 5 on the rear surface of the wiring board 3, conductor balls 8 are provided in a lattice, forming a BGA structure. On each of the conductor balls 8, a conductive layer is formed by plating or printing. The conductor balls 8 that serve as bumps are selected to be of uniform diameter beforehand and the material of the conductor balls 8 has a higher melting point than the softening point of the wiring board 3 or the mounting board to which the wiring board 3 is connected.

4. 发明专利

JPH0745757A SEMICONDUCTOR DEVICE AND MANUFACTURE OF HEAT DISSIPATING DEVICE THEREOF 失效
公开(公告)号：JPH0745757A
公开(公告)日：1995-02-14
申请号：JP19114293
申请日：1993-08-02
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , TSUBOI TOSHIHIRO , TATE HIROSHI , OZAKI HIROSHI , KIKUCHI MASAYUKI , KIKUCHI NORISHIGE , KOSAKU HIROSHI , OTSUKA KANJI
IPC分类号： H01L23/36
摘要： PURPOSE:To enable the pin fins of a heat dissipating device of pin fin structure to be easily, efficiently, and surely fixed at a low cost. CONSTITUTION:Spacer metal wires 8 and pin fin metal wires 9 of aluminum or copper are fixed to a heat dissipating plate 6-1 of aluminum or copper with brazing material 10, and the spacing metal wires 8 are fixed at a prescribed interval with the metal wires 9. Then, the metal wires 8 are fixed in the spaces between the metal wires 9 respectively, whereby the metal wires 8 are interposed between the metal wires 9 respectively to serve as guides to set the metal wires 9 upright.

5. 发明专利

JPH077110A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH077110A
公开(公告)日：1995-01-10
申请号：JP14472593
申请日：1993-06-16
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KIKUCHI NORISHIGE , TSUBOI TOSHIHIRO , TATE HIROSHI , OZAKI HIROSHI , AKASAKI HIROSHI , KIKUCHI MASAYUKI , KOSAKU HIROSHI , SHIRAI MASAYUKI
IPC分类号： H01L23/40
摘要： PURPOSE:To enhance heat dissipation properties of semiconductor device by providing protrusions and recesses on the surface of a package, fitting a heat dissipation fin thereto, thereby increasing the contact surface area between the package and the fin and the quantity of heat being conducted from the package to the fin. CONSTITUTION:A heat dissipation fin 7 is fitted through protrusions and recesses to the surface of a package 6. Consequently, contact area is increased between the package 6 and the fin 7 thus increasing the quantity of heat being transmitted from the package 6 to the fin 7. As a result, heat dissipation properties of semiconductor device are enhanced and a high integration semiconductor device can be operated stably with high reliability. Furthermore, no gap is produced between the package 6 and the fin 7 because the package 6 is bonded to the fin 7 through a bonding material 8. This structure transmits heat positively from the semiconductor to the fin 7 thus realizing positive heat dissipation of the semiconductor device.

6. 发明专利

JPH0637233A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPH0637233A
公开(公告)日：1994-02-10
申请号：JP18921892
申请日：1992-07-16
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , OTSUKA KANJI , MIZUKAMI MASAO , TATE HIROSHI
IPC分类号： H01L21/60 , H01L23/12 , H01L23/50
摘要： PURPOSE:To provide a technology of mounting a semiconductor chip on a board in high density as well as enhancing the reliability upon the connection between the semiconductor chip and the board. CONSTITUTION:Within a lead 5 connecting a footprint 4 of a mounting board 1 to an electrode pad 3 of a semiconductor chip 2, one end side connecting to the footprint 4 is extended over to be located on the inner position than the other side connecting to the electrode pad 3 of the semiconductor chip 2 while a bent part 5a in hollow state in contact with neither the mounting board 1 nor the semiconductor chip 2 is formed halfway on the lead 5. Furthermore, a protrusion 6 comprising a rubber elastic body is interposed between the end of the lead 5 connecting to the footprint 4 and the main surface of the semiconductor chip 2.

7. 发明专利

JPH0434000A FLUX CLEANSER AND METHOD FOR CLEANSING SOLDERED ELECTRONIC PART WITH THE SAME 失效
公开(公告)号：JPH0434000A
公开(公告)日：1992-02-05
申请号：JP14084590
申请日：1990-05-30
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KIKUCHI HIROSHI , KIKUCHI NORISHIGE , HAYASHIDA TETSUYA , SATO TOSHIHIKO , TATE HIROSHI
IPC分类号： B23K1/00 , C11D7/26 , C11D7/50
摘要： PURPOSE:To provide a cleanser substantially not having a smell, having a high flash point and capable of effectively and rapidly cleansing a flux adhered to soldered electronic parts by compounding benzyl alcohol. CONSTITUTION:A soldered electronic part is preferably immersed in a benzyl alcohol and heated or vibrated with ultrasonic waves to dissolve a rosin flux in the benzyl alcohol. The electronic part is subsequently immersed in isopropyl alcohol (IPA) to dissolve a white residue, tin abietate, in the IPA. The benzyl alcohol adhered to the surface of the electronic part is rapidly removed by the vapor-drying of the IPA.

8. 发明专利

JPH03217048A HEAT TRANSFER MATERIAL FOR JUNCTION 失效
公开(公告)号：JPH03217048A
公开(公告)日：1991-09-24
申请号：JP1209090
申请日：1990-01-22
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： TATE HIROSHI , OTSUKA KANJI , KAWASHIMA MASAYUKI
IPC分类号： H01L23/40
摘要： PURPOSE:To obtain adhering function and high thermal conductivity by forming of resin material, metal and ceramic particles to be mixed in the resin. CONSTITUTION:A heat transfer material for a junction to thermally conduct and bond between a heating element and a member to be bonded thereto is composed of resins 1, 2, a metal and ceramic particles 3, 4 to be mixed in the resins 1, 2. For example, the particles 3, 4 are filled in a vessel in which main agent 1 of 2-liquid resin material are filled, agitated, curing agent 2 is then mixed, stirred to promote curing reaction. A bonding material mixed with low melting point metal particles 5 is applied on one adhering surface of a component 6 or 7 to be brought into close contact according to the manufacturing method, pressurized to press-bond both, allowed to stand for a hot atmosphere and to cure the resin in the material.

9. 发明专利

JPH03217024A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03217024A
公开(公告)日：1991-09-24
申请号：JP1209190
申请日：1990-01-22
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： TATE HIROSHI
IPC分类号： H01L21/60 , H05K3/34
摘要： PURPOSE:To prevent the position deviation of the temporary fixing part to a substrate until it is completely conveyed into a soldering atmosphere by providing a low composition having a low melting point for at least one of electrode parts, or covering at least the junction with alloy for the electrodes having the low-melting-point composition. CONSTITUTION:Electrode parts 2-4 are formed so that the electrodes are exposed on the same plane from a package. The electrode parts 2-4 are soldered and connected to electrodes 6 on a substrate. In this semiconductor substrate 1, at least one of the above described electrode parts 2-4 has a low melting point composition, or at least the junction is covered with electrode metal 3 having the low melting point composition. For example, the low melting point alloy parts 3 are provided at the four corners (or two points at the outermost parts on the diagonal lines) in a wiring 2 of a mounted part 1. Electrode alloy parts 4 having the melting point which is higher than that of the low-melting-point electrode alloy parts 3 by several tens of deg.C are provided. The mounted part 1 is positioned on the mounting substrate 5 on which flux is applied. The providing atmosphere is heated to a degree so that the low-melting-point electrode alloy parts 3 are fused and the electrode alloy parts 4 are not fused, and temporary fixing is performed.

10. 发明专利

JPH03106062A COOLING STRUCTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH03106062A
公开(公告)日：1991-05-02
申请号：JP24583489
申请日：1989-09-20
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KIKUCHI NORISHIGE , TATE HIROSHI , EMATA KOJI , AKASAKI HIROSHI , OTSUKA KANJI
IPC分类号： H05K7/20 , H01L23/473
摘要： PURPOSE:To enable heat released from a semiconductor chip to be dissipated outside from the rear of a cap by a method wherein coolant fed to the rear region of the cap through an inner pipe is brought into direct contact with the rear of the cap. CONSTITUTION:Coolant C fed to the rear region of a cap 6 from a coolant feed jacket 14 through an inner pipe 21 is brought into direct contact with the rear of the cap 6 and rapidly discharged to a coolant discharge jacket 1 passing through a gap between the outer wall of the inner pipe 21 and the inner wall of a cooling pipe 10. By this setup, heat released from a semiconductor chip 5 in operation is rapidly discharged from the rear of the cap 6, so that the semiconductor chip 5 is efficiently cooled down.

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