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    • 4. 发明专利
    • VACUUM BREAKER, VACUUM VALVE AND ELECTRIC CONTACT FOR USE IN THE BREAKER, AND MANUFACTURE OF THEM
    • JPH09231881A
    • 1997-09-05
    • JP6024396
    • 1996-02-23
    • HITACHI LTD
    • MURAKAMI HAJIMEOHASHI MASABUMIKOMURO KATSUHIROKIKUCHI SHIGERUBABA NOBORU
    • H01H33/66
    • PROBLEM TO BE SOLVED: To suppress roughening of the electrode surface and enhance the breakdown voltage characteristics even in the initial operating performance by forming an arc electrode from a certain high-conductivity metal and a fire-resistant metal having a higher melting point than the high-conductivity metal. SOLUTION: An arc electrode is formed from a sintered alloy of such a structure that fire-resistant metal particles are dispersed in a high-conductivity metal, wherein the fire-resistant metal has a higher melting point than the high-conductivity metal. The particle sizes of the fire-resistant metal in a rod shape should be below 1μm in diameter, while the particle sizes of the high-conductivity metal be below 5μm. That is, the particle sizes of the fire-resistant metal such as Cr, W, Mo, Ta are made smaller than the powder of high-conductivity metal such as Cu, and the mixture powder is turned into alloy by mechanical process so that fine crystals are obtained whose grain sizes range between 10 and 1000nm. Accordingly both Cu and heat-resistant metal have fine crystal grains, and a high performance electrode material particularly in the initial operating period can be obtained. The arc electrode and a supporting member for electrode are made in a single piece structure in metallographical terms by means of sintering or frictional pressure joining, and thereby the reliability and safety are enhanced.
    • 6. 发明专利
    • PACKAGE FOR SEMICONDUCTOR DEVICE
    • JPH0448757A
    • 1992-02-18
    • JP15520890
    • 1990-06-15
    • HITACHI LTD
    • ARAKAWA HIDEOOKAMOTO MASAHIDETANAKA AKIRAOHASHI MASABUMI
    • H05K1/11H01L23/12H01L23/50
    • PURPOSE:To obtain a ceramic package for semiconductor having high sealability and low thermal resistance by composing it of a through hole conductor formed of a metal wire having a melting point equal to or higher than the baking temperature of ceramics, and a board in which input/output pins are connected to the conductor. CONSTITUTION:Multilayer interconnection conductors 8 are interposed in a ceramic 2, and a metal wire through hole conductors 10 to be conducted therewith is interposed therein. Input/output pins 3 are directly brazed to the conductor 10 by a brazing layer 11 without Ni plating. As the baking temperature is 1700 deg. or higher, a metal wire made of W, Mo higher in melting point is applied to a board containing AlN as a main ingredient. Particularly, the wire of W substantially coincident with the AlN having 4.5X10 / deg.C of thermal expansion coefficient is selected. Thus, reliability for sintering the board and thermal stress in the case of a cold cycle is obtained. Further, if heat dissipation from a printed board is considered, heat can be dissipated to the board through the high thermal conductivity input/output pins, and it is possible to make the thermal resistance of a package lower by taking the material of the input/ output pins into account.