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1. 发明专利

JPH11163102A SUSCEPTOR FOR SEMICONDUCTOR MANUFACTURING 失效
公开(公告)号：JPH11163102A
公开(公告)日：1999-06-18
申请号：JP34214197
申请日：1997-11-27
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： IMAI YOSHINORI , MIYAUCHI AKIHIRO
IPC分类号： H01L21/683 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To uniformize film quality or the film forming speed of a wafer, by providing a board acceptance face making contact with the whole reverse side of a treated board by means of a base part and an acceptance part. SOLUTION: A susceptor 10 is composed of an acceptance part 11 and a base part 12. The acceptance part 11 consists of a discoidal table 13 and a projection part stuck out to a bottom center part of the table 13. The base part 12 is such that a hollowed center part 15 is formed from an upper face, and a hollowed peripheral part 16 is formed over all around the outer circumference of the hollowed center part 15. Then, a wafer 2 is put on the table 13, and a peripheral part of the wafer 2 is fit to the hollowed peripheral part 16 together with fitting the table 13 to the hollowed center part 15. Here, the peripheral part of the wafer 2 is in contact with the hollowed peripheral part 16 and the center part is in contact with the table 13, thus the whole reverse side of the wafer 2 is contact with the susceptor 10 and is held. As a result, no temperature difference arises between a content part and a non-contact part to the susceptor 10, so a film quality and a film forming speed to a treated board is uniformized.

2. 发明专利

JPH11243059A SEMICONDUCTOR MANUFACTURE DEVICE 失效
公开(公告)号：JPH11243059A
公开(公告)日：1999-09-07
申请号：JP4481398
申请日：1998-02-26
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： IMAI YOSHINORI , WATANABE TOMOJI , MISE NOBUYUKI
IPC分类号： H01L21/205 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To efficiently remove byproducts which attach in an exhaust piping by making etching gas flow only in the exhaust piping. SOLUTION: An opening and closing valve 3, which closes the communication with a reaction tube 1 when the inside of the exhausting piping 2 is etched, is provided at the upstream of the exhaust piping 2. A pressure adjusting valve 5, which adjusts the pressure in the exhaust piping 2 optimally, is provided at the exhaust piping 2 at the downstream from the opening and closing valve 3. An etching-gas inlet pipe 4, which introduces the etching gas optimal for removing the biproduct attached to the exhaust piping 2, is inserted into the exhaust piping 2 between the opening and closing valve 3 and the pressure adjusting valve 5.

3. 发明专利

JPH11121382A VAPOR DEPOSITING DEVICE 失效
公开(公告)号：JPH11121382A
公开(公告)日：1999-04-30
申请号：JP28080497
申请日：1997-10-14
申请人： HITACHI LTD , KOKUSAI ELECTRIC CO LTD
发明人： INOUE HIRONORI , SUZUKI TAKAYA , MIYAUCHI AKIHIRO , SAKURAI YOSHIHIKO , IKEDA FUMIHIDE , IMAI YOSHINORI
IPC分类号： C30B25/16 , C23C16/44 , C23C16/52 , H01L21/205 , H01L21/677 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To improve the efficiency of operation for forming thin films. SOLUTION: A member 14 to be inserted having a sharp nail is fixed at an end of an upper servo arm 8 of a wafer transporting device 6. A transporting plate 9 on which a wafer is placed is fixed at an end of a lower servo arm 7. A controlling device 15 numerically controls the amount of travel of these two servo arms 7 and 8. After thin films have been formed, the nail of the member 14 to be inserted is slid between a susceptor 2 and a wafer 3 in a reaction chamber by driving the upper servo arm 8. The outer brim of the wafer 3 is lifted from the susceptor 2 by the nail of the member 14 to be inserted. Then the lower servo arm 7 is driven to insert the transporting plate 9 under the wafer 3. The member 14 to be inserted is lowered by driving the upper servo arm 8, and the wafer 3 on the susceptor 2 is transferred onto the transporting plate 9. The transporting plate 9 is transported from the reaction chamber 1 to a cassette chamber 12 by driving the lower servo arm 7.

4. 发明专利

JPH10223718A SUBSTRATE HOLDING METHOD AND SUBSTRATE CONVEYANCE JIG 失效
公开(公告)号：JPH10223718A
公开(公告)日：1998-08-21
申请号：JP2800397
申请日：1997-02-12
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： IMAI YOSHINORI , INOUE HIRONORI
IPC分类号： H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To obtain a substrate holding method which restrains the crystal defect of a substrate from being generated due to a substrate conveyance jig and in which a throughput can be enhanced by a method wherein, before the substrate is scooped up, the substrate conveyance jig is moved in such a way that the track of a fork-shaped arm covers nearly the whole face of the substrate. SOLUTION: A substrate 1 is scooped up by fork-shaped arms 2a at a substrate conveyance jig 2, and the substrate 1 is held. In this case, before the substrate 1 is scooped up, the substrate conveyance jig 2 is moved in such a way that the track of the fork-shaped arms 2a covers nearly the whole face of the substrate 1. For example, when two arms 2a at a conveyance jig 2 are inserted under a high-temperature wafer 1 in order to hold and convey the wafer 1, the two arms 2a are inserted while they are being wiggled to the right and the left on a horizontal plane as shown by a segmental arrow 3 in the figure. Thereby, a part 4 which is cooled by the conveyance jig 2 covers the wafer as a whole, and it is possible to effectively restrain the generation of a crystal defect caused by a thermal stress due to a local cooling operation.

5. 发明专利

JP2000036467A PHOSPHORUS DIFFUSION METHOD 失效
公开(公告)号：JP2000036467A
公开(公告)日：2000-02-02
申请号：JP20317498
申请日：1998-07-17
申请人： KOKUSAI ELECTRIC CO LTD
发明人： NOMURA HISASHI , IMAI YOSHINORI , ISHIGURO KENICHI
IPC分类号： H01L21/223
摘要： PROBLEM TO BE SOLVED: To provide a phosphorus diffusion method for a poly Si film, capable of performing the phosphorus diffusion of a low temperature and easily controlling the phosphorus density, without generating at the same time an excess PSG(phosphorus silicate glass) film with the phosphorus diffusion. SOLUTION: For this phosphorus diffusion method, at vapor-diffusion of phosphorus P to a polysilicon film 12 which is a base film, the upper limit of a temperature is the relatively low temperature of 850 deg.C capable of P density control and the upper limit of a pressure is 5000 Pa capable of the P density control. Then, by making PH3 or a gas mixture containing PH3 flow over the polysilicon film as reaction gas and changing the temperature in a range 800 deg.C or lower under the pressure 5000 Pa or lower and changing the pressure in the range of the pressure 4000 Pa or lower at the temperature 850 deg.C or lower, the P density is controlled, and the phosphorus doped polysilicon film of the required phosphorus density is formed.

6. 发明专利

JP2000114187A SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JP2000114187A
公开(公告)日：2000-04-21
申请号：JP28370198
申请日：1998-10-06
申请人： KOKUSAI ELECTRIC CO LTD
发明人： IMAI YOSHINORI , ISHIGURO KENICHI , NOMURA HISASHI
IPC分类号： H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To improve the yield of the formation of a MOS transistor and shorten its overall processing time, in the atmospheric-pressure formation process of its gate oxide film and the reduced-pressure formation process of its silicon polycrystalline film. SOLUTION: In a batch-processing type reduced-pressure processing chamber 32, a load-lock chamber 44 is provided, thereby interrupting the pressure communication of the reduced-pressure processing chamber 32 to a single-wafer processing type atmospheric-pressure processing chamber 31. On the sides of the atmospheric-pressure and reduced-pressure processing chambers 31, 32, carriage chambers 33, 35 are provided respectively, and between both the carriage chambers 33, 35, a buffer shelf 34 for temporarily storing thereon wafers is provided. As a result, with respect to both the atmospheric-pressure and reduced- pressure processing chambers 31, 32, the wafers can be carried independently of each other.

7. 发明专利

JPH0973973A EVALUATION METHOD FOR HEATER LIFE 失效
公开(公告)号：JPH0973973A
公开(公告)日：1997-03-18
申请号：JP22762995
申请日：1995-09-05
申请人： KOKUSAI ELECTRIC CO LTD
发明人： IMAI YOSHINORI
IPC分类号： H05B3/00 , H01L21/205 , H01L21/22 , H01L21/26 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To recognize the life of a heater by evaluating the life close to actual usage conditions using the integral value of the change of heater temperature as the index of the life evaluation, and monitoring the integral value of the temperature change. SOLUTION: The most important factor for the decision of a heater life is temperature change. Accordingly, an integral value of the temperature change is adopted as an evaluation reference. When the heater is maintained at a constant temperature, the change rate is zero. If the temperature changes rapidly, naturally the change rate becomes large. The random up and down of the temperature is repeated, and the integral of the change rate is obtained when the life runs out. If this value is regarded as the evaluation reference, the life can be predicted based on the integral value of the temperature change up to then by just adding a simple monitor device to even the heater actually in use.

8. 发明专利

JPH1064832A SELF CLEANING METHOD 失效
公开(公告)号：JPH1064832A
公开(公告)日：1998-03-06
申请号：JP22110396
申请日：1996-08-22
申请人： KOKUSAI ELECTRIC CO LTD
发明人： IMAI YOSHINORI
IPC分类号： C30B33/08 , C23F4/00 , H01L21/205 , H01L21/22 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To make the etching depth of a reaction product uniform to avoid overetching the reactor inner wall, by changing the flow rate and directions of a cleaning etching gas flowing in the reactor and cleaning time. SOLUTION: A reactor 1 has symmetrically disposed gas inlet ports 2A, 2B and exhaust port 3A, 3B. Two cleaning operations A and B are alternately performed for exhausting an etching gas in the respective routes from one and the other inlet ports 2A and 2B to the exhaust ports 3A and 3B via the reactor 1, thus alternately flowing the gas like flip flop to change the etching gas active regions in the reactor, thereby dynamically controlling the local etching depth. The gas flow rate and time are controlled at the time of flip flop operation.

9. 发明专利

JPH0974069A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH0974069A
公开(公告)日：1997-03-18
申请号：JP22762895
申请日：1995-09-05
申请人： KOKUSAI ELECTRIC CO LTD
发明人： IMAI YOSHINORI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/31 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To easily materialize optimum heater structure for performing optimum temperature control by improving temperature controllability. SOLUTION: In a semiconductor manufacture device which heat-treats a wafer 4, with its heater divided into a peripheral zone heater 1A and a center zone heater 2A, the calorific value of the peripheral zone 1 is made larger than the calorific value of the center zone 2.

10. 发明专利

JP2000195796A SUBSTRATE TREATING APPARATUS 失效
公开(公告)号：JP2000195796A
公开(公告)日：2000-07-14
申请号：JP37265398
申请日：1998-12-28
申请人： KOKUSAI ELECTRIC CO LTD
发明人： TAKADA MASATOSHI , IMAI YOSHINORI , YAMAGUCHI NOBUAKI
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To easily and surely reduce the unwanted substance concn. by controlling evacuating means and gas purging means so as to repeat the vacuum evacuation and the atmospheric pressure recovery in the apparatus until a concn. measuring means provides a specified measured value or less. SOLUTION: A main controller 50 opens a fourth valve, a fourth oxygen concn. meter 41 measures the oxygen concn. in a first reactor chamber and sends measured value data to the main controller 50 after a time lapsed, an operation recipe control unit of the main controller 50 compares the measured value with a value of oxygen concn. preset in the operation recipe control unit through a main operating unit 51, the main controller 50 sends vacuum evacuation and atmospheric pressure recovery control continuing signals again to a sequencer 53 when the measured value exceeds the preset value of oxygen concn., the sequencer 53 opens an exhaust valve and again evacuates the first reactor chamber through a fourth exhaust pipe, and the vacuum evacuation and the atmospheric pressure recovery steps are repeated until the measured oxygen concn. value in the first reactor chamber is a specified value or less.

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